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“Single particle analysis techniques”. de Bock LA, Van Grieken RE page 243 (1999).
Keywords: H3 Book chapter; AXES (Antwerp X-ray Analysis, Electrochemistry and Speciation)
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“Single particle characterisation of inorganic and organic North Sea suspension”. Jambers W, Dekov V, Van Grieken R, Marine chemistry 67, 17 (1999). http://doi.org/10.1016/S0304-4203(99)00046-8
Keywords: A1 Journal article; AXES (Antwerp X-ray Analysis, Electrochemistry and Speciation)
DOI: 10.1016/S0304-4203(99)00046-8
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“Some new applications of auxiliary signals in X-ray fluorescence and electron microprobe analysis”. Kuczumow A, Vekemans B, Schalm O, Vincze L, Dorriné, W, Gysels K, Van Grieken R, , 197 (1999)
Keywords: P1 Proceeding; AXES (Antwerp X-ray Analysis, Electrochemistry and Speciation)
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“Trend analysis of the published concentrations of heavy metals in aerosols above the North Sea and the English Channel for the period 1971-1994”. Hoornaert S, Treiger B, Van Grieken R, Laane R, Environmental reviews 7, 191 (1999)
Keywords: A1 Journal article; AXES (Antwerp X-ray Analysis, Electrochemistry and Speciation)
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“Hysteresis in mesoscopic superconducting disks: the Bean-Livingston barrier”. Deo PS, Schweigert VA, Peeters FM, Physical review : B : condensed matter and materials physics 59, 6039 (1999). http://doi.org/10.1103/PhysRevB.59.6039
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 59
DOI: 10.1103/PhysRevB.59.6039
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“Mesoscopic superconducting disks”. Deo PS, Peeters FM, Schweigert VA, Superlattices and microstructures 25, 1195 (1999). http://doi.org/10.1006/spmi.1999.0734
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 2.123
Times cited: 22
DOI: 10.1006/spmi.1999.0734
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“Accurate infrared absorption measurement of interstitial and precipitated oxygen in p+ silicon wafers”. De Gryse O, Clauws P, Rossou L, van Landuyt J, Vanhellemont J, Microelectronic engineering 45, 277 (1999). http://doi.org/10.1016/S0167-9317(99)00180-X
Abstract: A novel infrared absorption method has been developed to measure [he interstitial oxygen concentration in highly doped silicon. Thin samples of the order of 10-30 mu m are prepared in an essentially stress-free state without changing the state of the crystal. The oxygen concentration is then determined by measuring the height of the 1136-cm(-1) absorption peak due to interstitial oxygen at 5.5 K. The obtained results on as-grown samples are compared with those from gas fusion analysis. The precipitated oxygen concentration in annealed samples is also determined with the new method. It will be shown that the interstitial oxygen concentration in highly doped silicon can be determined with high accuracy and down to concentrations of 10(17) cm(-3). (C) 1999 Elsevier Science B.V. All rights reserved.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 1.806
DOI: 10.1016/S0167-9317(99)00180-X
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