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“A structure model and growth mechanism for multishell carbon nanotubes”. Amelinckx S, Bernaerts D, Zhang XB, Van Tendeloo G, van Landuyt J, Science 267, 1334 (1995). http://doi.org/10.1126/science.267.5202.1334
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 33.611
Times cited: 169
DOI: 10.1126/science.267.5202.1334
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“The structure of different phases of pure C70 crystals”. Verheijen MA, Meekes H, Meijer G, Bennema P, de Boer JL, van Smaalen S, Van Tendeloo G, Amelinckx S, Muto S, van Landuyt J, Chemical physics 166, 287 (1992). http://doi.org/10.1016/0301-0104(92)87026-6
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.652
Times cited: 168
DOI: 10.1016/0301-0104(92)87026-6
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“The study of carbon nanotubes produced by catalytic method”. Ivanov V, Nagy JB, Lambin P, Lucas A, Zhang XB, Zhang XF, Bernaerts D, Van Tendeloo G, Amelinckx S, van Landuyt J, Chemical physics letters 223, 329 (1994)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.897
Times cited: 405
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“The study of partially ordered 11/20 alloys by HREM”. De Meulenaere P, Van Tendeloo G, van Landuyt J, Microscopy research and technique 25, 169 (1993). http://doi.org/10.1002/jemt.1070250208
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.154
DOI: 10.1002/jemt.1070250208
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“Superlattice variants in Sr2CuO2(CO3): an electron microscopy study”. Milat O, Van Tendeloo G, van Landuyt J, Amelinckx S, Acta crystallographica: section A: foundations of crystallography 49, 357 (1993)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.307
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“TEM studies of processed Si device materials”. Vanhellemont J, Bender H, van Landuyt J, Conference series of the Institute of Physics 157, 393 (1997)
Abstract: Recent developments in the field of TEM characterisation of Si device materials are discussed and illustrated by a few case studies of material in different stages of various kinds of processing. Important challenges are the ever decreasing defect densities and device feature sizes. Defect delineation techniques using large area inspection tools yielding accurate coordinates of the defects to be studied have therefore become an essential part of the TEM analysis procedure. The possibility to transfer these defect coordinates without loss of accuracy to tools for local TEM specimen preparation is also a conditio sine qua non for a successful analysis. Insitu TEM remains important as dynamic processes can be observed and analysed under well defined experimental conditions. As case studies illustrating new developments, results are presented on defects in as-grown Ct silicon, on in-situ studies in processed silicon, on problem sites in advanced integrated circuit structures and on assessment of localised strain fields in the nm size scale.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
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“TEM study of laser induced phase transition in iron thin films”. Teodorescu VS, Nistor LC, van Landuyt J, Dinescu M, Materials research bulletin 29, 63 (1994). http://doi.org/10.1016/0025-5408(94)90106-6
Abstract: Laser induced phase transition from b.c.c.(alpha) to f.c.c.(gamma) iron thin films is studied by high resolution TEM. The iron film has been covered on both sides with carbon layers to protect it against oxidation. Single pulse, tau FWHM = 20ns KrF (lambda = 248nm) excimer laser irradiation was performed in air with the film on the substrate. The laser pulse acts like a heat pulse followed by a rapid quenching revealing sequential aspects of the phase transition process. The presence of a fine mixture of the alpha + gamma phases between the alpha and gamma regions of the film has been interpreted as an incomplet transformation. The results are explained by assuming that the transformation took place via a phonon drag mechanism.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.288
Times cited: 2
DOI: 10.1016/0025-5408(94)90106-6
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“A TEM study of non-parallel twins inducing thickness growth in silver chloride {111} tabular crystals”. van Renterghem W, Schryvers D, van Landuyt J, Bollen D, van Roost C, de Keyzer R, The journal of imaging science and technology 45, 83 (2001)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 0.348
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“TEM study on precipitation behavior in Cu-Co alloys”. Takeda M, Suzuki N, Shinohara G, Endo T, van Landuyt J, Physica status solidi: A: applied research 168, 27 (1998). http://doi.org/10.1002/(SICI)1521-396X(199807)168:1<27::AID-PSSA27>3.0.CO;2-S
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 18
DOI: 10.1002/(SICI)1521-396X(199807)168:1<27::AID-PSSA27>3.0.CO;2-S
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“Een tempel voor elektronenmicroscopie “kijken naar atomen””. van Landuyt J, Fonds informatief 38, 13 (1998)
Keywords: A3 Journal article; Electron microscopy for materials research (EMAT)
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“A temperature study of mixed AgBr-AgBrI tabular crystals”. Goessens C, Schryvers D, van Landuyt J, Geuens I, Gijbels R, Jacob W, de Keyzer R Hawaii, page 70 (1995).
Keywords: H1 Book chapter; Electron microscopy for materials research (EMAT); Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Times cited: 3
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“A temperature study of mixed AgBr-AgBrI tabular crystals”. Goessens C, Schryvers D, van Landuyt J, Geuens I, Gijbels R, Jacob W, de Keyzer R, , 36 (1992)
Keywords: P3 Proceeding; Electron microscopy for materials research (EMAT); Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
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“SO4-chain formation and ordering in [YSrCa]Sr2Cu2.78(SO4)0.22O7-\delta”. Krekels T, Milat O, Van Tendeloo G, van Landuyt J, Amelinckx S, Slater PR, Greaves C, Physica: C : superconductivity 210, 439 (1993). http://doi.org/10.1016/0921-4534(93)90988-3
Abstract: YBCO-based materials containing SO4-tetrahedra centered on the Cu(1)-sites of the CuO-chain plane have been examined by means of electron diffraction and high resolution electron microscopy. An incommensurate modulation is observed and attributed to the ordering of b-oriented SO4-rich chains in the Cu(1)-S-O-layer, described in terms of an SO4-concentration wave.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 0.942
Times cited: 18
DOI: 10.1016/0921-4534(93)90988-3
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“The texture of catalytically grown coil-shaped carbon nanotubes”. Zhang XB, Zhang XF, Bernaerts D, Van Tendeloo G, Amelinckx S, van Landuyt J, Ivanov V, Nagy JB, Lambin P, Lucas AA, Europhysics letters 27, 141 (1994). http://doi.org/10.1209/0295-5075/27/2/011
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.095
Times cited: 168
DOI: 10.1209/0295-5075/27/2/011
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“The evolution of HVEM application in antwerp”. van Landuyt J, Ultramicroscopy
T2 –, 2nd Osaka International Symp.on High-Voltage Electron Microscopy : New Directions and Future Aspects of High Voltage Electron Microscopy, November 8-10, 1990, Osaka University, Osaka, Japan 39, 287 (1991). http://doi.org/10.1016/0304-3991(91)90208-N
Abstract: The evolution of the use of the 1250 keV high-voltage electron microscope in Antwerp is sketched by illustrating a non-exhaustive set of examples in various fields. One of the main present fields of application gets some more attention, i.e. the defect studies as produced by processing steps in microelectronic devices: (i) strain-induced dislocations at the edges of various device isolation interlayers, (ii) morphologies resulting from high-energy ion implantation creating buried layers for silicon on insulator (SOI) and other implantation technologies.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.436
DOI: 10.1016/0304-3991(91)90208-N
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“The influence of the h-BN morphology and structure on the c-BN growth”. Nistor L, Teodorescu V, Ghica C, van Landuyt J, Dinca G, Georgeoni P, Diamond and related materials
T2 –, 11th European Conference on Diamond, Diamond-like Materials, Carbon, Nanotubes, Nitrides and Silicon Carbide (Diamond 2000), SEP 03-08, 2000, OPORTO, PORTUGAL 10, 1352 (2001). http://doi.org/10.1016/S0925-9635(00)00377-0
Abstract: The morphology and structure of hexagonal graphitic BN (h-BN) powders with graphitization indices GI <5, used as precursors for the synthesis of cubic BN (c-BN) crystals, has been investigated by transmission electron microscopy in diffraction contrast and high resolution. We show that besides the GI, which is a general parameter for controlling the structural quality of h-EN ponders, some other microstructural features strongly influence the synthesis of c-BN. In our opinion, the high reactivity of some h-BN powders results from the presence of some nucleation centers for c-BN, observed at the edges of the h-BN particles. They are formed by a rearrangement of the graphitic (0002) planes by bending back, joining in pairs and forming locally nanoarches (half nanotubes). In these particular places, the nature of bonding locally turns towards sp(3), as in the case of c-BN, (C) 2001 Elsevier Science B.V. All rights reserved.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.561
Times cited: 17
DOI: 10.1016/S0925-9635(00)00377-0
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“The influence of the precipitation method on defect formation in multishell AgBrI (111) tabular crystals”. Van Renterghem W, Karthauser S, Schryvers D, van Landuyt J, De Keyzer R, Van Roost C, , 167 (2000)
Abstract: Multishell tabular grains have a higher speed than pure AgBr tabular grains. Usually the shells differ in size and iodide content, but also the precipitation method for the iodide containing shells has an influence on the iodide incorporation. A TEM investigation was performed to determine the defect structure of multishell AgBr (111) tabular crystals containing a shell with a low iodide concentration and one with a high iodide concentration. The twins that induce tabular growth and stacking fault contrast in the region of the iodide shells have been observed, similar to previously studied AgBr/Ag(Br,I) coreshell crystals. Moreover in some of the crystals dislocations have been observed, sometimes even an entire network. The number of dislocations formed varies for the different methods of iodide addition. Also variations in average thickness between the different iodide addition methods have been observed. A higher number of dislocations and thicker crystals point towards a higher local concentration of iodide. These observations allow deciding which iodide incorporation method is most useful for a preferred dislocation pattern.
Keywords: P1 Proceeding; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
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“The study of a crater forming on the surface of a Ti target submitted to multipulse excimer laser irradiation under low pressure N2”. Teodorescu VS, Mihailescu IN, Gyorgy E, Luches A, Martino M, Nistor LC, van Landuyt J, Hermann J, Journal of modern optics 43, 1773 (1996). http://doi.org/10.1080/095003496154815
Abstract: A Ti target was submitted to laser ablation in low ambient pressure N-2. Electron microscopy examination of the cross-section of the crater zone forming on the Ti target, and XPS analyses, indicate that there is a small effect on the nitridation processes taking place on and in the vicinity of the target. The studies show a zone influenced by the multipulse laser treatment extending beneath the crater down to a depth of the same order of magnitude as the crater depth (i.e. similar to 10 mu m). In this zone, TiN could be identified as being present only in traces, while the whole zone exhibited a layer structure with differences in morphology and mechanical wear.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.008
Times cited: 11
DOI: 10.1080/095003496154815
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“The study of carbon nanotubules produced by catalytic method”. Ivanov V, Nagy JB, Lambin P, Lucas A, Zhang XB, Zhang XF, Bernaerts D, Van Tendeloo G, Amelinckx S, van Landuyt J, Chemical physics letters 223, 329 (1994). http://doi.org/10.1016/0009-2614(94)00467-6
Abstract: Catalytic methods for the production of carbon nanotubules have been developed based on the decomposition of acetylene on well-dispersed metal particles strongly adsorbed on a support. Cobalt on silica was found to be the best catalyst-support combination for the production of graphitic tubules. The method for the catalyst preparation and the reaction conditions were optimized. Straight and coiled carbon tubules were obtained with inner and outer diameter of 3-7 and 15-20 nm, respectively, and up to 30 mum in length. These nanotubules were not coated by amorphous carbon. Traces of amorphous carbon could be removed by hydrogen. High resolution electron microscopy images and electron diffraction patterns of the straight nanotubules were similar to those obtained by the arc-discharge method. Coiled nanotubules were revealed by TEM to be regular polygonized helices where the bends are caused by pairs of pentagon-heptagon carbon rings among the hexagonal network.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.897
Times cited: 405
DOI: 10.1016/0009-2614(94)00467-6
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“The study of high Tc-superconducting materials by electron microscopy and electron diffraction”. Amelinckx S, Van Tendeloo G, van Landuyt J, Superconductor science and technology
T2 –, SATELLITE CONF TO THE 19TH INTERNATIONAL CONF ON LOW TEMPERATURE PHYSICS : HIGH TEMPERATURE SUPERCONDUCTIVITY, AUG 13-15, 1990, QUEENS COLL, CAMBRIDGE, ENGLAND 4, S19 (1991). http://doi.org/10.1088/0953-2048/4/1S/003
Abstract: A survey is given of the application of different electron microscopic techniques to the study of structural features of high T(c)-superconducting materials. Emphasis is laid in this contribution on those structural aspects for the study of which electron microscopy has been essential or has contributed to a significant extent.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.325
Times cited: 2
DOI: 10.1088/0953-2048/4/1S/003
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“The use of convergent beam electron diffraction for stress measurements in shallow trench isolation structures”. Stuer C, van Landuyt J, Bender H, Rooyackers R, Badenes G, Materials science in semiconductor processing 4, 117 (2001). http://doi.org/10.1016/S1369-8001(00)00110-4
Abstract: Shallow trench isolation (STI) is a promising technology for the isolation structures of the new generation of ULSI devices with dimensions below 0.18 mum. The various processing steps cause stress fields in STI structures, which can lead to defect formation in the silicon substrate. In their turn, stress fields affect the electrical parameters and the reliability of devices. Convergent beam electron diffraction (CBED) is used in this study to examine the influence of a wet and a dry pre-gate oxidation on the stress distribution around STI structures. The measurements are performed on STI structures with different width and spacing. CBED analysis is compared with bright-field TEM images. Defects are observed in high-strain areas of small isolated structures. (C) 2001 Elsevier Science Ltd. All rights reserved.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 2.359
Times cited: 6
DOI: 10.1016/S1369-8001(00)00110-4
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“Transmission electron microscopy studies of (111) twinned silver halide microcrystals”. Goessens C, Schryvers D, van Landuyt J, Microscopy research and technique 42, 85 (1998). http://doi.org/10.1002/(SICI)1097-0029(19980715)42:2<85::AID-JEMT3>3.0.CO;2-M
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.147
Times cited: 8
DOI: 10.1002/(SICI)1097-0029(19980715)42:2<85::AID-JEMT3>3.0.CO;2-M
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“A transmission electron-microscopy study of crystalline surface domains on al-co decagonal quasi-crystals and the \tau2-Al13CO4 approximant”. Zhang Z, Ma LN, Liao XZ, van Landuyt J, Philosophical magazine letters 70, 303 (1994). http://doi.org/10.1080/09500839408240991
Abstract: Twin-domains of a b.c.c. crystalline phase with a = 0.29 nm have been found in a surface layer on surfaces of Al-Co decagonal quasicrystals and the coexisting tau(2)-Al13Co4 crystalline approximant. These surface layer domains are introduced during the preparation of electron microscopy thin films by ion milling.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.087
Times cited: 4
DOI: 10.1080/09500839408240991
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“A transmission electron microscopy study of tweed-like structures in Al62Cu17.5CO17.5Si3 decagonal quasicrystals”. Zhang Z, Geng W, van Landuyt J, Van Tendeloo G, Philosophical magazine: A: physics of condensed matter: defects and mechanical properties 71, 1177 (1995)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 7
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“Up close: Center for Electron Microscopy of Materials Science at the University of Antwerp”. Van Tendeloo G, Schryvers D, van Dyck D, van Landuyt J, Amelinckx S, MRS bulletin , 57 (1994)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab
Impact Factor: 5.667
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“Electron microscopy study of twin sequences and branching in NissAl34 3R martensite”. Schryvers D, Van Landuyt J, ICOMAT (1992)
Abstract: Microtwin sequences in Ni66Al34 martensite plates of different size were investigated by electron microscopy. Although mostly irregular sequences were observed an average twin width w can be determined which increases with twin length L following the expected relation w ~ sqrt(L). High resolution electron microscopy was used to study the twin branching close to the plate boundaries and an atomic model for the branching of a microtwin and the changes in twin thickness is suggested
Keywords: A3 Journal Article; Electron Microscopy for Materials Science (EMAT) ;
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“Reliability of copper dual damascene influenced by pre-clean”. Tokei Z, Lanckmans F, van den Bosch G, Van Hove M, Maex K, Bender H, Hens S, van Landuyt J, Analysis Of Integrated Circuits , 118 (2002). http://doi.org/10.1109/IPFA.2002.1025629
Keywords: P1 Proceeding; Electron microscopy for materials research (EMAT)
Times cited: 5
DOI: 10.1109/IPFA.2002.1025629
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“In situ HREM irradiation study of point-defect clustering in MBE-grown strained Si1-xGex/(001)Si structures”. Fedina L, Lebedev OI, Van Tendeloo G, van Landuyt J, Mironov OA, Parker EHC, Physical review : B : condensed matter and materials physics 61, 10336 (2000). http://doi.org/10.1103/PhysRevB.61.10336
Abstract: We present a detailed analysis of the point-defect clustering in strained Si/Si(1-x)Ge(x)/(001)Si structures, including the interaction of the point defects with the strained interfaces and the sample surface during 400 kV electron irradiation at room temperature. Point-defect cluster formation is very sensitive to the type and magnitude of the strain in the Si and Si(1-x)Ge(x) layers. A small compressive strain (-0.3%) in the SiGe alloy causes an aggregation of vacancies in the form of metastable [110]-oriented chains. They are located on {113} planes and further recombine with interstitials. Tensile strain in the Si layer causes an aggregation of interstitial atoms in the forms of additional [110] rows which are inserted on {113} planes with [001]-split configurations. The chainlike configurations are characterized by a large outward lattice relaxation for interstitial rows (0.13 +/-0.01 nm) and a very small inward relaxation for vacancy chains (0.02+/-0.01 nm). A compressive strain higher than -0.5% strongly decreases point-defect generation inside the strained SiGe alloy due to the large positive value of the formation volume of a Frenkel pair. This leads to the suppression of point-defect clustering in a strained SiGe alloy so that SiGe relaxes via a diffusion of vacancies from the Si layer, giving rise to an intermixing at the Si/SiGe interface. In material with a 0.9% misfit a strongly increased flow of vacancies from the Si layer to the SiGe layer and an increased biaxial strain in SiGe bath promote the preferential aggregation of vacancies in the (001) plane, which relaxes to form intrinsic 60 degrees dislocation loops.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.836
Times cited: 27
DOI: 10.1103/PhysRevB.61.10336
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“Accurate infrared absorption measurement of interstitial and precipitated oxygen in p+ silicon wafers”. De Gryse O, Clauws P, Rossou L, van Landuyt J, Vanhellemont J, Microelectronic engineering 45, 277 (1999). http://doi.org/10.1016/S0167-9317(99)00180-X
Abstract: A novel infrared absorption method has been developed to measure [he interstitial oxygen concentration in highly doped silicon. Thin samples of the order of 10-30 mu m are prepared in an essentially stress-free state without changing the state of the crystal. The oxygen concentration is then determined by measuring the height of the 1136-cm(-1) absorption peak due to interstitial oxygen at 5.5 K. The obtained results on as-grown samples are compared with those from gas fusion analysis. The precipitated oxygen concentration in annealed samples is also determined with the new method. It will be shown that the interstitial oxygen concentration in highly doped silicon can be determined with high accuracy and down to concentrations of 10(17) cm(-3). (C) 1999 Elsevier Science B.V. All rights reserved.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 1.806
DOI: 10.1016/S0167-9317(99)00180-X
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“Characterization of oxide precipitates in heavily B-doped silicon by infrared spectroscopy”. de Gryse O, Clauws P, Vanhellemont J, Lebedev OI, van Landuyt J, Simoen E, Claeys C, Journal of the electrochemical society 151, G598 (2004). http://doi.org/10.1149/1.1776592
Abstract: Infrared absorption spectra of oxygen precipitates in boron-doped silicon with a boron concentration between 10(17) and 10(19) cm(-3) are analyzed, applying the spectral function representation of composite materials. The aspect ratio of the platelet precipitates is determined by transmission electron microscopy measurements. The analysis shows that in samples with moderate doping levels (<10(18) B cm(-3)) SiOγ precipitates are formed with the same composition as in the lightly doped case. In the heavily boron-doped (>10(18) cm(-3)) samples, however, the measured spectra of the precipitates are consistent with a mixture of SiO2 and B2O3, with a volume fraction of B2O3 as high as 0.41 in the most heavily doped case. (C) 2004 The Electrochemical Society.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.259
Times cited: 13
DOI: 10.1149/1.1776592
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