“Interface-controlled magnetism and transport of ultrathin manganite films”. Shapoval O, Huehn S, Verbeeck J, Jungbauer M, Belenchuk A, Moshnyaga V, Journal of applied physics 113, 17c711 (2013). http://doi.org/10.1063/1.4795422
Abstract: We report ferromagnetic, T-C = 240 K, and metallic, T-MI = 250 K, behaviors of a three unit cell thick interface engineered lanthanum manganite film, grown by metalorganic aerosol deposition technique on SrTiO3(100) substrates. Atomically resolved electron microscopy and chemical analysis show that ultrathin manganite films start to grow with La-O layer on a strongly Mn/Ti-intermixed interface, engineered by an additional deposition of 2 u.c. of Sr-Mn-O. Such interface engineering results in a hole-doped manganite layer and stabilizes ferromagnetism and metallic conductivity down to the thickness of d = 3 u.c. The films with d = 8 u.c. demonstrate a bulk-like transport behavior with T-MI similar to T-C = 310 – 330 K. (C) 2013 American Institute of Physics.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.068
Times cited: 7
DOI: 10.1063/1.4795422
|
“The essential role of the plasma sheath in plasma–liquid interaction and its applications—A perspective”. Vanraes P, Bogaerts A, Journal Of Applied Physics 129, 220901 (2021). http://doi.org/10.1063/5.0044905
Abstract: Based on the current knowledge, a plasma–liquid interface looks and behaves very differently from its counterpart at a solid surface. Local processes characteristic to most liquids include a stronger evaporation, surface deformations, droplet ejection, possibly distinct mechanisms behind secondary electron emission, the formation of an electric double layer, and an ion drift-mediated liquid resistivity. All of them can strongly influence the interfacial charge distribution. Accordingly, the plasma sheath at a liquid surface is most likely unique in its own way, both with respect to its structure and behavior. However, insights into these properties are still rather scarce or uncertain, and more studies are required to further disclose them. In this Perspective, we argue why more research on the plasma sheath is not only recommended but also crucial to an accurate understanding of the plasma–liquid interaction. First, we analyze how the sheath regulates various elementary processes at the plasma–liquid interface, in terms of the electrical coupling, the bidirectional mass transport, and the chemistry between plasma and liquid phase. Next, these three regulatory functions of the sheath are illustrated for concrete applications. Regarding the electrical coupling, a great deal of attention is paid to the penetration of fields into biological systems due to their relevance for plasma medicine, plasma agriculture, and food processing. Furthermore, we illuminate the role of the sheath in nuclear fusion, nanomaterial synthesis, and chemical applications. As such, we hope to motivate the plasma community for more fundamental research on plasma sheaths at liquid surfaces.
Keywords: A1 Journal Article; Plasma, laser ablation and surface modeling Antwerp (PLASMANT) ;
Impact Factor: 2.068
DOI: 10.1063/5.0044905
|
“Phase formation and texture of thin nickel germanides on Ge(001) and Ge(111)”. De Schutter B, Van Stiphout K, Santos NM, Bladt E, Jordan-Sweet J, Bals S, Lavoie C, Comrie CM, Vantomme A, Detavernier C, Journal of applied physics 119, 135305 (2016). http://doi.org/10.1063/1.4945317
Abstract: We studied the solid-phase reaction between a thin Nifilm and a single crystal Ge(001) or Ge(111) substrate during a ramp anneal. The phase formation sequence was determined using in situX-ray diffraction and in situRutherford backscattering spectrometry (RBS), while the nature and the texture of the phases were studied using X-ray pole figures and transmission electron microscopy. The phase sequence is characterized by the formation of a single transient phase before NiGe forms as the final and stable phase. X-ray pole figures were used to unambiguously identify the transient phase as the ϵ-phase, a non-stoichiometric Ni-rich germanide with a hexagonal crystal structure that can exist for Ge concentrations between 34% and 48% and which forms with a different epitaxial texture on both substrate orientations. The complementary information gained from both RBS and X-ray pole figure measurements revealed a simultaneous growth of both the ϵ-phase and NiGe over a small temperature window on both substrate orientations.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.068
Times cited: 14
DOI: 10.1063/1.4945317
|
“Progress and prospects in nanoscale dry processes: How can we control atomic layer reactions?”.Ishikawa K, Karahashi K, Ichiki T, Chang JP, George SM, Kessels WMM, Lee HJ, Tinck S, Um JH, Kinoshita K, Japanese journal of applied physics 56, 06HA02 (2017). http://doi.org/10.7567/JJAP.56.06HA02
Abstract: In this review, we discuss the progress of emerging dry processes for nanoscale fabrication. Experts in the fields of plasma processing have contributed to addressing the increasingly challenging demands in achieving atomic-level control of material selectivity and physicochemical reactions involving ion bombardment. The discussion encompasses major challenges shared across the plasma science and technology community. Focus is placed on advances in the development of fabrication technologies for emerging materials, especially metallic and intermetallic compounds and multiferroic, and two-dimensional (2D) materials, as well as state-of-the-art techniques used in nanoscale semiconductor manufacturing with a brief summary of future challenges.
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 1.384
Times cited: 18
DOI: 10.7567/JJAP.56.06HA02
|
“Ab-initio study of the segregation and electronic properties of neutral and charged B and P dopants in Si and Si/SiO2 nanowires”. Schoeters B, Leenaerts O, Pourtois G, Partoens B, Journal of applied physics 118, 104306 (2015). http://doi.org/10.1063/1.4930048
Abstract: We perform first-principles calculations to investigate the preferred positions of B and P dopants, both neutral and in their preferred charge state, in Si and Si/SiO2 core-shell nanowires (NWs). In order to understand the observed trends in the formation energy, we isolate the different effects that determine these formation energies. By making the distinction between the unrelaxed and the relaxed formation energy, we separate the impact of the relaxation from that of the chemical environment. The unrelaxed formation energies are determined by three effects: (i) the effect of strain caused by size mismatch between the dopant and the host atoms, (ii) the local position of the band edges, and (iii) a screening effect. In the case of the SiNW (Si/SiO2 NW), these effects result in an increase of the formation energy away from the center (interface). The effect of relaxation depends on the relative size mismatch between the dopant and host atoms. A large size mismatch causes substantial relaxation that reduces the formation energy considerably, with the relaxation being more pronounced towards the edge of the wires. These effects explain the surface segregation of the B dopants in a SiNW, since the atomic relaxation induces a continuous drop of the formation energy towards the edge. However, for the P dopants, the formation energy starts to rise when moving from the center but drops to a minimum just next to the surface, indicating a different type of behavior. It also explains that the preferential location for B dopants in Si/SiO2 core-shell NWs is inside the oxide shell just next to the interface, whereas the P dopants prefer the positions next to the interface inside the Si core, which is in agreement with recent experiments. These preferred locations have an important impact on the electronic properties of these core-shell NWs. Our simulations indicate the possibility of hole gas formation when B segregates into the oxide shell.
Keywords: A1 Journal article; Condensed Matter Theory (CMT); Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 2.068
Times cited: 3
DOI: 10.1063/1.4930048
|
“Bilayer graphene Hall bar with a pn-junction”. Milovanovic SP, Masir MR, Peeters FM, Journal of applied physics 114, 113706 (2013). http://doi.org/10.1063/1.4821264
Abstract: We investigate the magnetic field dependence of the Hall and the bend resistances for a ballistic Hall bar structure containing a pn-junction sculptured from a bilayer of graphene. The electric response is obtained using the billiard model, and we investigate the cases of bilayer graphene with and without a band gap. Two different conduction regimes are possible: (i) both sides of the junction have the same carrier type and (ii) one side of the junction is n-type while the other one is p-type. The first case shows Hall plateau-like features in the Hall resistance that fade away as the band gap opens. The second case exhibits a bend resistance that is asymmetric in magnetic field as a consequence of snake states along the pn-interface, where the maximum is shifted away from zero magnetic field.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 2.068
Times cited: 3
DOI: 10.1063/1.4821264
|
“Veselago lensing in graphene with a p-n junction: Classical versus quantum effects”. Milovanović, SP, Moldovan D, Peeters FM, Journal of applied physics 118, 154308 (2015). http://doi.org/10.1063/1.4933395
Abstract: The feasibility of Veselago lensing in graphene with a p-n junction is investigated numerically for realistic injection leads. Two different set-ups with two narrow leads are considered with absorbing or reflecting side edges. This allows us to separately determine the influence of scattering on electron focusing for the edges and the p-n interface. Both semiclassical and tight-binding simulations show a distinctive peak in the transmission probability that is attributed to the Veselago lensing effect. We investigate the robustness of this peak on the width of the injector, the position of the p-n interface, and different gate potential profiles. Furthermore, the influence of scattering by both short- and long-range impurities is considered.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 2.068
Times cited: 19
DOI: 10.1063/1.4933395
|
“Magnetic electron focusing and tuning of the electron current with a pn-junction”. Milovanović, SP, Masir MR, Peeters FM, Journal of applied physics 115, 043719 (2014). http://doi.org/10.1063/1.4863403
Abstract: Transverse magnetic focusing properties of graphene using a ballistic four terminal structure are investigated. The electric response is obtained using the semiclassical billiard model. The transmission exhibits pronounced peaks as a consequence of skipping orbits at the edge of the structure. When we add a pn-junction between the two probes, snake states along the pn-interface appear. Injected electrons are guided by the pn-interface to one of the leads depending on the value of the applied magnetic field. Oscillations in the resistance are found depending on the amount of particles that end up in each lead.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 2.068
Times cited: 21
DOI: 10.1063/1.4863403
|
“Graphene hall bar with an asymmetric pn-junction”. Milovanovic SP, Masir MR, Peeters FM, Journal of applied physics 113, 193701 (2013). http://doi.org/10.1063/1.4805350
Abstract: We investigated the magnetic field dependence of the Hall and the bend resistances in the ballistic regime for a single layer graphene Hall bar structure containing a pn-junction. When both regions are n-type the Hall resistance dominates and Hall type of plateaus are formed. These plateaus occur as a consequence of the restriction on the angle imposed by Snell's law allowing only electrons with a certain initial angles to transmit though the potential step. The size of the plateau and its position is determined by the position of the potential interface as well as the value of the applied potential. When the second region is p-type, the bend resistance dominates, which is asymmetric in field due to the presence of snake states. Changing the position of the pn-interface in the Hall bar strongly affects these states and therefore the bend resistance is also changed. Changing the applied potential, we observe that the bend resistance exhibits a peak around the charge-neutrality point (CNP), which is independent of the position of the pn-interface, while the Hall resistance shows a sign reversal when the CNP is crossed, which is in very good agreement with a recent experiment [J. R. Williams and C. M. Marcus, Phys. Rev. Lett. 107, 046602 (2011)].
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 2.068
Times cited: 7
DOI: 10.1063/1.4805350
|
“Effect of hydriding induced defects on the small-scale plasticity mechanisms in nanocrystalline palladium thin films”. Lumbeeck G, Idrissi H, Amin-Ahmadi B, Favache A, Delmelle R, Samaee V, Proost J, Pardoen T, Schryvers D, Journal Of Applied Physics 124, 225105 (2018). http://doi.org/10.1063/1.5055274
Abstract: Nanoindentation tests performed on nanocrystalline palladium films subjected to hydriding/dehydriding cycles demonstrate a significant softening when compared to the as-received material. The origin of this softening is unraveled by combining in situ TEM nanomechanical testing with automated crystal orientation mapping in TEM and high resolution TEM. The softening is attributed to the presence of a high density of stacking faults and of Shockley partial dislocations after hydrogen loading. The hydrogen induced defects affect the elementary plasticity mechanisms and the mechanical response by acting as preferential sites for twinning/detwinning during deformation. These results are analyzed and compared to previous experimental and simulation works in the literature. This study provides new insights into the effect of hydrogen on the atomistic deformation and cracking mechanisms as well as on the mechanical properties of nanocrystalline thin films and membranes.
Keywords: A1 Journal Article; Electron Microscopy for Materials Science (EMAT) ;
Impact Factor: 2.068
Times cited: 2
DOI: 10.1063/1.5055274
|
“Magnetic and magnetodielectric properties of erbium iron garnet ceramic”. Maignan A, Singh K, Simon C, Lebedev OI, Martin C, Tan H, Verbeeck J, Van Tendeloo G, Journal of applied physics 113, 033905 (2013). http://doi.org/10.1063/1.4776716
Abstract: An Er3Fe5O12 ceramic has been sintered in oxygen atmosphere at 1400 °C for dielectric measurements. Its structural quality at room temperature has been checked by combining transmission electron microscopy and X-ray diffraction. It crystallizes in the cubic space group Ia3d with a = 12.3488(1). The dielectric permittivity ([variantgreekepsilon]′) and losses (tan δ) measurements as a function of temperature reveal the existence of two anomalies, a broad one between 110 K and 80 K, attributed to the Er3+ spin reorientation, and a second sharper feature at about 45 K associated to the appearance of irreversibility on the magnetic susceptibility curves. In contrast to the lack of magnetic field impact on [variantgreekepsilon]′ for the former anomaly, a complex magnetic field effect has been evidenced below 45 K. The isothermal [variantgreekepsilon]′(H) curves show the existence of positive magnetodielectric effect, reaching a maximum of 0.14% at 3 T and 10 K. Its magnitude decreases as H is further increased. Interestingly, for the lowest H values, a linear regime in the [variantgreekepsilon]′(H) curve is observed. From this experimental study, it is concluded that the [variantgreekepsilon]′ anomaly, starting above the compensation temperature Tc (75 K) and driven by the internal magnetic field, is not sensitive to an applied external magnetic field. Thus, below 45 K, it is the magnetic structure which is responsible for the coupling between spin and charge in this iron garnet.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.068
Times cited: 15
DOI: 10.1063/1.4776716
|
“First-principles study of the optoelectronic properties and photovoltaic absorber layer efficiency of Cu-based chalcogenides”. Sarmadian N, Saniz R, Partoens B, Lamoen D, Journal of applied physics 120, 085707 (2016). http://doi.org/10.1063/1.4961562
Abstract: Cu-based chalcogenides are promising materials for thin-film solar cells with more than 20% measured
cell efficiency. Using first-principles calculations based on density functional theory, the
optoelectronic properties of a group of Cu-based chalcogenides Cu2-II-IV-VI4 is studied. They are
then screened with the aim of identifying potential absorber materials for photovoltaic applications.
The spectroscopic limited maximum efficiency (SLME) introduced by Yu and Zunger [Phys. Rev.
Lett. 108, 068701 (2012)] is used as a metric for the screening. After constructing the currentvoltage
curve, the SLME is calculated from the maximum power output. The role of the nature of
the band gap, direct or indirect, and also of the absorptivity of the studied materials on the maximum
theoretical power conversion efficiency is studied. Our results show that Cu2II-GeSe4 with
II¼ Cd and Hg, and Cu2-II-SnS4 with II ¼ Cd, Hg, and Zn have a higher theoretical efficiency
compared with the materials currently used as absorber layer.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT); Condensed Matter Theory (CMT)
Impact Factor: 2.068
Times cited: 29
DOI: 10.1063/1.4961562
|