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Author Janssen, G.; Goovaerts, E.; Bouwen, A.; Partoens, B.; van Daele, B.; Zurauskiene, N.; Koenraad, P.M.; Wolter, J.H.
Title Observation of cyclotron resonance in an InAs/GaAs wetting layer with shallowly formed quantum dots Type A1 Journal article
Year 2003 Publication Physical review : B : condensed matter and materials physics Abbreviated Journal Phys Rev B
Volume 68 Issue Pages 045329,1-6
Keywords A1 Journal article; Nanostructured and organic optical and electronic materials (NANOrOPT); Condensed Matter Theory (CMT)
Abstract
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Corporate Author Thesis
Publisher Place of Publication Lancaster, Pa Editor
Language Wos 000185239600080 Publication Date 2003-08-01
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0163-1829;1095-3795; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 3.836 Times cited 10 Open Access
Notes (up) FWO G.0110.96 and G.0409.02; IAP-V Approved Most recent IF: 3.836; 2003 IF: NA
Call Number UA @ lucian @ c:irua:43316 Serial 2416
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Author Bals, S.; Van Tendeloo, G.; Rijnders, G.; Huijben, M.; Leca, V.; Blank, D.H.A.
Title Transmission electron microscopy on interface engineered superconducting thin films Type A1 Journal article
Year 2003 Publication IEEE transactions on applied superconductivity Abbreviated Journal Ieee T Appl Supercon
Volume 13 Issue 2:3 Pages 2834-2837
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract Transmission electron microscopy is used to evaluate different deposition techniques, which optimize the microstructure and physical properties of superconducting thin films. High-resolution electron microscopy proves that the use of an YBa2Cu2Ox buffer layer can avoid a variable interface configuration in YBa2Cu3O7-delta thin films grown on SrTiO3. The growth can also be controlled at an atomic level by, using sub-unit cell layer epitaxy, which results in films with high quality and few structural defects. Epitaxial strain in Sr0.85La0.15CuO2 infinite layer thin films influences the critical temperature of these films, as well as the microstructure. Compressive stress is released by a modulated or a twinned microstructure, which eliminates superconductivity. On the other hand, also tensile strain seems to lower the critical temperature of the infinite layer.
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Corporate Author Thesis
Publisher Place of Publication New York, N.Y. Editor
Language Wos 000184242400101 Publication Date 2003-07-16
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1051-8223; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor Times cited 13 Open Access
Notes (up) Iuap V-1; Fwo Approved Most recent IF: NA
Call Number UA @ lucian @ c:irua:103292 Serial 3712
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Author Lazoryak, B.I.; Baryshnikova, O.V.; Stefanovich, S.Y.; Malakho, A.P.; Morozov, V.A.; Belik, A.A.; Leonidov, I.A.; Leonidova, O.N.; Van Tendeloo, G.
Title Ferroelectric and ionic-conductive properties of nonlinear-optical vanadate, Ca9Bi(VO4)7 Type A1 Journal article
Year 2003 Publication Chemistry of materials Abbreviated Journal Chem Mater
Volume 15 Issue 15 Pages 3003-3010
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract Structural, chemical, and physical properties of whitlockite-type Ca9Bi(VO4)(7) were studied by X-ray powder diffraction (XRD), electron diffraction (ED), second-harmonic generation (SHG), thermogravimetry, differential scanning calorimetry, dielectric, and electrical-conductivity measurements. A new phase-transition of the ferroelectric type was found in Ca9Bi(VO4)(7) with a transition temperature, T-c of 1053 +/- 3 K. The polar phase, beta-Ca9Bi(VO4)(7), is stable below T-c down to at least 160 K. The centrosymmetric beta'-phase is stable above T-c up to 1273 +/- 5 K. Above 1273 K, it decomposes to give BiVO4 and whitlockite-type solid solutions of Ca9+1.5xBi1-x(VO4)(7). The beta<---->beta' phase transition is reversible and of second order. Electrical conductivity of beta'-Ca9Bi(VO4)(7) is rather high (sigma = 0.6 x 10(-3) S/cm at 1200 K) and obeys the Arrhenius law with an activation energy of 1.0 eV. Structure parameters of Ca9Bi(VO4)(7) are refined by the Rietveld method from XRD data measured at room temperature (space group R3c; Z = 6; a = 10.8992(1) Angstrom, c = 38.1192(4) Angstrom, and V = 3921.6(1) Angstrom(3); R-wp = 3.06% and R-p = 2.36%). Bi3+ ions together with Ca2+ ions are statistically distributed among the M1, M2, M3, and M5 sites. Ca9Bi(VO4)(7) has a SHG efficiency of about 140 times that of quartz. Through the powder SHG measurements, we estimated the nonlinear optical susceptibility, Digital, at about 6.1-7.2 pm/V. This value for Ca9Bi(VO4)(7) is comparable with that for known nonlinear optical materials such as LiNbO3 and LiTaO3.
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Corporate Author Thesis
Publisher Place of Publication Washington, D.C. Editor
Language Wos 000184379900024 Publication Date 2003-07-22
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0897-4756;1520-5002; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 9.466 Times cited 51 Open Access
Notes (up) Iup V-1; Dwtc Approved Most recent IF: 9.466; 2003 IF: 4.374
Call Number UA @ lucian @ c:irua:103284 Serial 1179
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Author Jacobs, K.; van Daele, B.; Leys, M.; Moerman, I.; Van Tendeloo, G.
Title Effect of growth interrupt and growth rate on MOVPE-grown InGaN/GaN MQW structures Type A1 Journal article
Year 2003 Publication Journal of crystal growth Abbreviated Journal J Cryst Growth
Volume 248 Issue Pages 498-502
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
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Corporate Author Thesis
Publisher Place of Publication Amsterdam Editor
Language Wos 000180446900091 Publication Date 2002-12-28
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0022-0248; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.751 Times cited 14 Open Access
Notes (up) was dubbel; dubbel eruit gehaald Approved Most recent IF: 1.751; 2003 IF: 1.414
Call Number UA @ lucian @ c:irua:54785 Serial 810
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