“Epitaxially grown silicon-based single-atom catalyst for visible-light-driven syngas production”. Chen H, Xiong Y, Li J, Abed J, Wang D, Pedrazo-Tardajos A, Cao Y, Zhang Y, Wang Y, Shakouri M, Xiao Q, Hu Y, Bals S, Sargent EHH, Su C-Y, Yang Z, Nature communications 14, 1719 (2023). http://doi.org/10.1038/S41467-023-37401-3
Abstract: Despite the natural abundance and promising properties of Si, there are few examples of crystalline Si-based catalysts. Here, the authors report an epitaxial growth method to construct Co single atoms on Si for light driven CO2 reduction to syngas. Improving the dispersion of active sites simultaneous with the efficient harvest of photons is a key priority for photocatalysis. Crystalline silicon is abundant on Earth and has a suitable bandgap. However, silicon-based photocatalysts combined with metal elements has proved challenging due to silicon's rigid crystal structure and high formation energy. Here we report a solid-state chemistry that produces crystalline silicon with well-dispersed Co atoms. Isolated Co sites in silicon are obtained through the in-situ formation of CoSi2 intermediate nanodomains that function as seeds, leading to the production of Co-incorporating silicon nanocrystals at the CoSi2/Si epitaxial interface. As a result, cobalt-on-silicon single-atom catalysts achieve an external quantum efficiency of 10% for CO2-to-syngas conversion, with CO and H-2 yields of 4.7 mol g((Co))(-1) and 4.4 mol g((Co))(-1), respectively. Moreover, the H-2/CO ratio is tunable between 0.8 and 2. This photocatalyst also achieves a corresponding turnover number of 2 x 10(4) for visible-light-driven CO2 reduction over 6 h, which is over ten times higher than previously reported single-atom photocatalysts.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 16.6
Times cited: 6
DOI: 10.1038/S41467-023-37401-3
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“A nanoscale shape memory oxide”. Zhang J, Ke X, Gou G, Seidel J, Xiang B, Yu P, Liang WI, Minor AM, Chu Yh, Van Tendeloo G, Ren X, Ramesh R;, Nature communications 4, 2768 (2013). http://doi.org/10.1038/ncomms3768
Abstract: Stimulus-responsive shape-memory materials have attracted tremendous research interests recently, with much effort focused on improving their mechanical actuation. Driven by the needs of nanoelectromechanical devices, materials with large mechanical strain, particularly at nanoscale level, are therefore desired. Here we report on the discovery of a large shape-memory effect in bismuth ferrite at the nanoscale. A maximum strain of up to ~14% and a large volumetric work density of ~600±90 J cm−3 can be achieved in association with a martensitic-like phase transformation. With a single step, control of the phase transformation by thermal activation or electric field has been reversibly achieved without the assistance of external recovery stress. Although aspects such as hysteresis, microcracking and so on have to be taken into consideration for real devices, the large shape-memory effect in this oxide surpasses most alloys and, therefore, demonstrates itself as an extraordinary material for potential use in state-of-art nanosystems.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 12.124
Times cited: 67
DOI: 10.1038/ncomms3768
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“Morphotropic phase boundary in pure perovskite lead titanate at room temperature”. Zhang Z, Chen X, Shi X, Hu Y, Huang J, Liu S, Ren Z, Huang H, Han G, Van Tendeloo G, Tian H, Materials Today Nano 20, 100275 (2022). http://doi.org/10.1016/J.MTNANO.2022.100275
Abstract: For many decades, great efforts have been devoted to pursue a large piezoelectric response by an intelligent design of morphotropic phase boundaries (MPB) in solid solutions, where tetragonal (T) and rhombohedral (R) structures coexist. For example, classical PbZrxTi1-xO3 and Pb(Mg1/3Nb2/3)O-3-PbTiO3 single crystals demonstrate a giant piezoelectric response near MPB. However, as the end member of these solids, perovskite-structured PbTiO3 always adopts the T phase at room temperature. Here, we report a pathway to create room temperature MPB in a single-phase PbTiO3. The uniaxial stress along the c-axis drives a T-R phase transition bridged by a monoclinic (M) phase, which facilitates a polarization rotation in the monodomain PbTiO3. Meanwhile, we demonstrate that the coexistence of T and R phases at room temperature can be achieved via an extremely mismatched heterointerface system. The uniaxial pressure is proved as an efficient way to break the inherent symmetry and able to substantially tailor the phase transition temperature Tc. These findings provide new insights into MPB, offering the opportunity to explore the giant piezoelectric response in single-phase materials. (c) 2022 Elsevier Ltd. All rights reserved.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 10.3
DOI: 10.1016/J.MTNANO.2022.100275
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“Charged vacancy in graphene : interplay between Landau levels and atomic collapse resonances”. Wang J, Zhao W-S, Hu Y, Filho RNC, Peeters FM, Physical review B 109, 104103 (2024). http://doi.org/10.1103/PHYSREVB.109.104103
Abstract: The interplay between a magnetic field and the Coulomb potential from a charged vacancy on the electron states in graphene is investigated within the tight-binding model. The Coulomb potential removes locally Landau level degeneracy, while the vacancy introduces a satellite level next to the normal Landau level. These satellite levels are found throughout the positive-energy region, but in the negative-energy region, they turn into atomic collapse resonances. Crossings between Landau levels with different angular quantum number m are found. Unlike the point impurity system in which an anticrossing occurs between Landau levels of the same m, in this work anticrossing is found between the normal Landau level and the vacancy-induced level. The atomic collapse resonance hybridizes with the Landau levels. The charge at which the lowest Landau level m = -1, N = 1 crosses E = 0 increases with enhancing magnetic field. A Landau level scaling anomaly occurs when the charge is larger than the critical charge beta 0.6 and this critical charge is independent of the magnetic field.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.7
DOI: 10.1103/PHYSREVB.109.104103
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