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Author | de Keyser, A.; Bogaerts, R.; Karavolas, V.C.; van Bockstal, L.; Herlach, F.; Peeters, F.M.; van de Graaf, W.; Borghs, G. | ||||
Title | Interplay of 2D and 3D charge carriers in Si-δ-doped InSb layers grown epitaxially on GaAs | Type | A1 Journal article | ||
Year | 1996 | Publication | Solid state electronics | Abbreviated Journal | Solid State Electron |
Volume | 40 | Issue | Pages | 395-398 | |
Keywords | A1 Journal article; Condensed Matter Theory (CMT) | ||||
Abstract | |||||
Address | |||||
Corporate Author | Thesis | ||||
Publisher | Place of Publication | Oxford | Editor | ||
Language | Wos | A1996UN20700083 | Publication Date | 2002-07-26 | |
Series Editor | Series Title | Abbreviated Series Title | |||
Series Volume | Series Issue | Edition | |||
ISSN | 0038-1101; | ISBN | Additional Links | UA library record; WoS full record; WoS citing articles | |
Impact Factor | 1.504 | Times cited | 2 | Open Access | |
Notes | Approved | no | |||
Call Number | UA @ lucian @ c:irua:15817 | Serial | 1705 | ||
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