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Abstract: The effect of an electron-hole puddle on the electrical transport when governed by snake states in a bipolar graphene structure is investigated. Using numerical simulations we show that information on the size and position of the electron-hole puddle can be obtained using the dependence of the conductance on magnetic field and electron density of the gated region. The presence of the scatterer disrupts snake state transport which alters the conduction pattern. We obtain a simple analytical formula that connects the position of the electron-hole puddle with features observed in the conductance. The size of the electron-hole puddle is estimated from the magnetic field and gate potential that maximizes the effect of the puddle on the electrical transport.

Keywords: A1 Journal article; Engineering sciences. Technology; Condensed Matter Theory (CMT)

Impact Factor: 3.44

Times cited: 3

DOI: 10.1088/0957-4484/27/10/105203

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Abstract: The intrinsic field effect, the change in surface conductance with an applied transverse electric field, of prototypal strongly correlated VO(2) has remained elusive. Here we report its measurement enabled by epitaxial VO(2) and atomic layer deposited high-kappa dielectrics. Oxygen migration, joule heating, and the linked field-induced phase transition are precluded. The field effect can be understood in terms of field-induced carriers with densities up to approximately 5x10(13) cm(-2) which are trongly localized, as shown by their low, thermally activated mobility ( approximately 1x10(-3) cm(2)/V s at 300 K). These carriers show behavior consistent with that of Holstein polarons and strongly impact the (opto)electronics of VO(2).

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	“Characterization of the size and position of electron-hole puddles at a graphene p-n junction”. Milovanovic SP, Peeters FM, Nanotechnology 27, 105203 (2016). http://doi.org/10.1088/0957-4484/27/10/105203 Abstract: The effect of an electron-hole puddle on the electrical transport when governed by snake states in a bipolar graphene structure is investigated. Using numerical simulations we show that information on the size and position of the electron-hole puddle can be obtained using the dependence of the conductance on magnetic field and electron density of the gated region. The presence of the scatterer disrupts snake state transport which alters the conduction pattern. We obtain a simple analytical formula that connects the position of the electron-hole puddle with features observed in the conductance. The size of the electron-hole puddle is estimated from the magnetic field and gate potential that maximizes the effect of the puddle on the electrical transport. Keywords: A1 Journal article; Engineering sciences. Technology; Condensed Matter Theory (CMT) Impact Factor: 3.44 Times cited: 3 DOI: 10.1088/0957-4484/27/10/105203 Additional Links: UA library record; WoS full record; WoS citing articles Permanent link \| Save citation: RTF PDF LaTeX \| Export record: BibTeX Endnote ISI RIS Word XML
	“Field Effect and Strongly Localized Carriers in the Metal-Insulator Transition Material VO(2)”. Martens K, Jeong JW, Aetukuri N, Rettner C, Shukla N, Freeman E, Esfahani DN, Peeters FM, Topuria T, Rice PM, Volodin A, Douhard B, Vandervorst W, Samant MG, Datta S, Parkin SSP, Physical review letters 115, 196401 (2015). http://doi.org/10.1103/PhysRevLett.115.196401 Abstract: The intrinsic field effect, the change in surface conductance with an applied transverse electric field, of prototypal strongly correlated VO(2) has remained elusive. Here we report its measurement enabled by epitaxial VO(2) and atomic layer deposited high-kappa dielectrics. Oxygen migration, joule heating, and the linked field-induced phase transition are precluded. The field effect can be understood in terms of field-induced carriers with densities up to approximately 5x10(13) cm(-2) which are trongly localized, as shown by their low, thermally activated mobility ( approximately 1x10(-3) cm(2)/V s at 300 K). These carriers show behavior consistent with that of Holstein polarons and strongly impact the (opto)electronics of VO(2). Keywords: A1 Journal article; Condensed Matter Theory (CMT) Impact Factor: 8.462 Times cited: 28 DOI: 10.1103/PhysRevLett.115.196401 Additional Links: UA library record; WoS full record; WoS citing articles Permanent link \| Save citation: RTF PDF LaTeX \| Export record: BibTeX Endnote ISI RIS Word XML