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Author van Renterghem, W.; Goessens, C.; Schryvers, D.; van Landuyt, J.; Verrept, P.; Bollen, D.; van Roost, C.; de Keyzer, R.
Title Defects and growth mechanisms of AgCl(100) tabular crystals Type A1 Journal article
Year 1998 Publication Journal of crystal growth Abbreviated Journal J Cryst Growth
Volume 187 Issue Pages 410-420
Keywords (down) A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Amsterdam Editor
Language Wos 000073710800014 Publication Date 2002-07-25
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0022-0248; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.751 Times cited 8 Open Access
Notes Approved Most recent IF: 1.751; 1998 IF: 1.307
Call Number UA @ lucian @ c:irua:29675 Serial 625
Permanent link to this record
 

 
Author Deveirman, A.; van Landuyt, J.; Vanhellemont, J.; Maes, H.E.; Yallup, K.
Title Defects in high-dose oxygen implanted silicon : a TEM study Type A1 Journal article
Year 1991 Publication Vacuum: the international journal and abstracting service for vacuum science and technology T2 – 1ST SIOMX WORKSHOP ( SEPARATION BY IMPLANTATION OF OXYGEN ) ( SWI-88 ), NOV 07-08, 1988, UNIV SURREY, GUILDFORD, ENGLAND Abbreviated Journal Vacuum
Volume 42 Issue 5-6 Pages 367-369
Keywords (down) A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract Results are discussed of a transmission electron microscopy study of high-dose oxygen implanted silicon. In addition to the general high temperature (> 1200-degrees-C) annealing treatments also annealings at 'low' temperatures (1000-1100-degrees-C) were performed in order to slow down the precipitate and defect reactions. The observed dissolution of the oxide precipitates during prolonged high temperature annealing is explained by critical radius considerations. Threading dislocations are the remaining lattice defects in the silicon overlayer and cannot be removed by further annealing. Low temperature annealing results in the formation and subsequent unfaulting of extrinsic stacking fault loops below the buried oxide layer.
Address
Corporate Author Thesis
Publisher Place of Publication Oxford Editor
Language Wos A1991EV61700007 Publication Date 2002-10-19
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0042-207X; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.858 Times cited 4 Open Access
Notes Approved MATERIALS SCIENCE, MULTIDISCIPLINARY 96/271 Q2 #
Call Number UA @ lucian @ c:irua:104022 Serial 629
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Author Nistor, L.; Bender, H.; Vantomme, A.; Wu, M.F.; van Landuyt, J.; O'Donnell, K.P.; Martin, R.; Jacobs, K.; Moerman, I.
Title Direct evidence of spontaneous quantum dot formation in a thick InGaN epilayer Type A1 Journal article
Year 2000 Publication Applied physics letters Abbreviated Journal Appl Phys Lett
Volume 77 Issue 4 Pages 507-509
Keywords (down) A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract We report a direct observation of quantum dots formed spontaneously in a thick InGaN epilayer by high resolution transmission electron microscopy. Investigation of a (280 nm thick) In0.22Ga0.78N single layer, emitting in the blue/green spectral region, reveals quantum dots with estimated sizes in the range of 1.5-3 nm. Such sizes are in very good agreement with calculations based on the luminescence spectra of this specimen. (C) 2000 American Institute of Physics. [S0003-6951(00)00930-X].
Address
Corporate Author Thesis
Publisher American Institute of Physics Place of Publication New York, N.Y. Editor
Language Wos 000088225400016 Publication Date 2002-07-26
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0003-6951; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 3.411 Times cited 44 Open Access
Notes Approved Most recent IF: 3.411; 2000 IF: 3.906
Call Number UA @ lucian @ c:irua:103448 Serial 712
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Author De Meulenaere, P.; Van Tendeloo, G.; van Landuyt, J.
Title Direct observation of clusters in some FCC alloys by HREM Type A1 Journal article
Year 1994 Publication Icem Abbreviated Journal
Volume 13 Issue Pages 447-448
Keywords (down) A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos A1994BE09X00207 Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Additional Links UA library record; WoS full record;
Impact Factor Times cited Open Access
Notes Approved no
Call Number UA @ lucian @ c:irua:10052 Serial 716
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Author Nistor, L.C.; van Landuyt, J.; Ralchenko, V.G.; Kononenko, T.V.; Obraztsova, E.D.; Strelnitsky, V.E.
Title Direct observation of laser-induced crystallization of a-C : H films Type A1 Journal article
Year 1994 Publication Applied physics A : materials science & processing Abbreviated Journal
Volume 58 Issue 2 Pages 137-144
Keywords (down) A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract The post-growth modification of diamond-like amorphous hydrogenated carbon a-C:H films by laser treatment has been studied by transmission electron microscopy and Raman spectroscopy. a-C:H films grown on Si substrates by benzene decomposition in a rf glow discharge were irradiated with 15 ns pulses of a KrF-excimer laser with fluences in the ran e of E = 50-700 mJ/cm(2). At fluences below 100 mJ/cm(2) an increase in the number of graphitic clusters and in their ordering was evidenced from Raman spectra, while the film structure remained amorphous according to electron microscopy and electron diffraction observations. At higher fluences the appearance of diamond particles of 2-7 nm size, embedded into the lower crystallized graphitic matrix, was observed and simultaneously a progressive growth of graphite nanocrystals with dimensions from 2 nm to 4 nm was deduced from Raman measurements. The maximum thickness of the crystallized surface layer (approximate to 400 nm) and the degree of laser annealing are limited by the film ablation which starts at E > 250 mJ/cm(2). The laser-treated areas lose their chemical inertness. In particular, chemical etching in chromium acid becomes possible, which may be used for patterning the highly inert carbon films.
Address
Corporate Author Thesis
Publisher Place of Publication Heidelberg Editor
Language Wos A1994MU87700005 Publication Date 2004-10-24
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0721-7250;1432-0630; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor Times cited 73 Open Access
Notes Approved no
Call Number UA @ lucian @ c:irua:99924 Serial 718
Permanent link to this record
 

 
Author Fang, P.a.; Gu, H.; Wang, P.l.; Van Landuyt, J.; Vleugels, J.; Van der Biest, O.;
Title Effect of powder coating on stabilizer distribution in CeO2-stabilized ZrO2 ceramics Type A1 Journal article
Year 2005 Publication Journal of the American Ceramic Society Abbreviated Journal J Am Ceram Soc
Volume 88 Issue 7 Pages 1929-1934
Keywords (down) A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract The phase and microstructure relationship of 12 mol% CeO2-stabilized ZrO2 ceramics prepared from coated powder was investigated using scanning electron microscopy (SEM), transmission electron microscopy (TEM), and energy-dispersed Xray spectroscopy (EDS). As compared with the sample prepared with co-precipitated method, which exhibited a similar grain size distribution, the EDS analysis revealed that the powder coating induced a wide distribution of CeO2 solubility, which decreases monotonically with the increase of grain size. This variation of stabilizer content from grain to grain rendered many large grains in the monoclinic phase. Stronger cerium segregation to grain boundaries was observed between large grains, which often form thin amorphous films there. The inhomogeneous; CeO2 distribution keeps more tetragonal ZrO2 grains close to the phase boundary to facilitate the transforming toughness. Addition of an Al2O3 precursor in coated powders effectively raises the overall CeO2 stabilizer content in the grains and preserves more transformable tetragonal phase in the microstructure, which further enhanced the fracture toughness. The dependence of CeO2 solubility on grain size may be explained in a simple coating-controlled diffusion and growth process that deserves further investigation.
Address
Corporate Author Thesis
Publisher Place of Publication Columbus, Ohio Editor
Language Wos 000230128100040 Publication Date 2005-06-23
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0002-7820;1551-2916; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 2.841 Times cited 11 Open Access
Notes Approved Most recent IF: 2.841; 2005 IF: 1.586
Call Number UA @ lucian @ c:irua:103156 Serial 830
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Author Hens, S.; Bender, H.; Donaton, R.A.; Maex, K.; Vanhaelemeersch, S.; van Landuyt, J.
Title EFTEM study of plasma etched low-k Si-O-C dielectrics Type A1 Journal article
Year 2001 Publication Institute of physics conference series T2 – Royal-Microscopical-Society Conference on Microscopy of Semiconducting, Materials, MAR 25-29, 2001, UNIV OXFORD, OXFORD, ENGLAND Abbreviated Journal
Volume Issue 169 Pages 415-418
Keywords (down) A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract Materials with low dielectric constant ("low-k'') in combination with Cu metallization are replacing the oxide based dielectrics with Al metallization in future generations of micro-electronic devices. In this work, a carbon doped oxide low-k dielectric material is studied after different kinds of etch/strip steps in single damascene Cu. filled line structures. Interline capacitance measurements indicate a dependence of the dielectric constant on the strip conditions. EFTEM is used to study the composition of the dielectric material and the modification of the low-k material at the sidewall of the etched structures for the various treatment conditions.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0-7503-0818-4; 0951-3248 ISBN Additional Links UA library record; WoS full record;
Impact Factor Times cited Open Access
Notes Approved Most recent IF: NA
Call Number UA @ lucian @ c:irua:103432 Serial 877
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Author Volkov, V.V.; van Landuyt, J.; Amelinckx, S.; Pervov, V.S.; Makhonina, E.V.
Title Electron microscopic and X-ray structural analysis of the layered crystals TaReSe4: structure, defect structure, and microstructure, including rotation twins Type A1 Journal article
Year 1998 Publication Journal of solid state chemistry Abbreviated Journal J Solid State Chem
Volume 135 Issue Pages 235-255
Keywords (down) A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication London Editor
Language Wos 000072900200008 Publication Date 2002-10-07
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0022-4596; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 2.299 Times cited 3 Open Access
Notes Approved Most recent IF: 2.299; 1998 IF: 1.432
Call Number UA @ lucian @ c:irua:29672 Serial 938
Permanent link to this record
 

 
Author Goessens, C.; Schryvers, D.; van Landuyt, J.; Millan, A.; de Keyzer, R.
Title Electron microscopical investigation of AgBr needle crystals Type A1 Journal article
Year 1995 Publication Journal of crystal growth Abbreviated Journal J Cryst Growth
Volume 151 Issue Pages 335-341
Keywords (down) A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Amsterdam Editor
Language Wos A1995RE62100017 Publication Date 2003-05-19
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0022-0248; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.698 Times cited 14 Open Access
Notes Approved MATERIALS SCIENCE, MULTIDISCIPLINARY 135/271 Q2 # PHYSICS, APPLIED 70/145 Q2 # PHYSICS, CONDENSED MATTER 40/67 Q3 #
Call Number UA @ lucian @ c:irua:13163 Serial 941
Permanent link to this record
 

 
Author Goessens, C.; Schryvers, D.; van Landuyt, J.; de Keyzer, R.
Title Electron microscopical investigation of tetrahedral-shaped AgBr microcrystals Type A1 Journal article
Year 1997 Publication Journal of crystal growth Abbreviated Journal J Cryst Growth
Volume 172 Issue Pages 426-432
Keywords (down) A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Amsterdam Editor
Language Wos A1997WL65300018 Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0022-0248 ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.751 Times cited 15 Open Access
Notes Approved Most recent IF: 1.751; 1997 IF: 1.259
Call Number UA @ lucian @ c:irua:21345 Serial 942
Permanent link to this record
 

 
Author Schryvers, D.; de Saegher, B.; van Landuyt, J.
Title Electron microscopy and diffraction study of the composition dependency of the 3R microtwinned martensite in Ni-Al Type A1 Journal article
Year 1991 Publication Materials research bulletin Abbreviated Journal Mater Res Bull
Volume 26 Issue Pages 57-66
Keywords (down) A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication New York, N.Y. Editor
Language Wos A1991EU98500007 Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0025-5408 ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 2.288 Times cited 11 Open Access
Notes Approved no
Call Number UA @ lucian @ c:irua:48348 Serial 943
Permanent link to this record
 

 
Author Volkov, V.V.; van Heurck, C.; van Landuyt, J.; Amelinckx, S.; Zhukov, E.G.; Polulyak, E.S.; Novotortsev, V.M.
Title Electron microscopy and X-ray study of the growth of FeCr2S4 spinel single crystals by chemical vapour transport Type A1 Journal article
Year 1993 Publication Crystal research and technology Abbreviated Journal Cryst Res Technol
Volume 28 Issue 8 Pages 1051-1061
Keywords (down) A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract The growth features of FeCr2S4 spinel single crystals prepared by chemical vapour transport were studied by means of scanning electron microscopy, transmission electron microscopy, high resolution electron microscopy, electron diffraction and X-ray analysis. Our results indicate that the epitaxial growth of the new phases FeCr7S12 and FeCr8S12, both based on the NiAs structure, can essentially inhibit the growth of large FeCr2S4 spinel single crystals in the octahedral habit. The new phases are fully characterised and the effects of defect ordering in these new phases are also reported.
Address
Corporate Author Thesis
Publisher Place of Publication Berlin Editor
Language Wos A1993MN86700003 Publication Date 2007-01-13
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0232-1300;1521-4079; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 0.935 Times cited 1 Open Access
Notes Approved no
Call Number UA @ lucian @ c:irua:6788 Serial 952
Permanent link to this record
 

 
Author Frangis, N.; Van Tendeloo, G.; van Landuyt, J.; Muret, P.; Nguyen, T.T.A.
Title Electron microscopy characterisation of erbium silicide-thin films grown on a Si(111) substrate Type A1 Journal article
Year 1996 Publication Applied surface science Abbreviated Journal Appl Surf Sci
Volume 102 Issue Pages 163-168
Keywords (down) A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Amsterdam Editor
Language Wos A1996VJ86100037 Publication Date 2003-05-12
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0169-4332; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 2.711 Times cited 9 Open Access
Notes Approved no
Call Number UA @ lucian @ c:irua:15458 Serial 953
Permanent link to this record
 

 
Author Bernaerts, D.; Amelinckx, S.; Van Tendeloo, G.; van Landuyt, J.
Title Electron microscopy of carbon nanotubes and related structures Type A1 Journal article
Year 1997 Publication The journal of physics and chemistry of solids Abbreviated Journal J Phys Chem Solids
Volume 58 Issue 11 Pages 1807-1813
Keywords (down) A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication New York, N.Y. Editor
Language Wos 000071510100029 Publication Date 2003-04-05
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0022-3697; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 2.059 Times cited 12 Open Access
Notes Approved Most recent IF: 2.059; 1997 IF: 1.083
Call Number UA @ lucian @ c:irua:21425 Serial 959
Permanent link to this record
 

 
Author Bernaerts, D.; Zhang, X.B.; Zhang, X.F.; Amelinckx, S.; Van Tendeloo, G.; van Landuyt, J.; Ivanov, V.; Nagy, J.B.
Title Electron microscopy study of coiled carbon tubules Type A1 Journal article
Year 1995 Publication Philosophical magazine: A: physics of condensed matter: defects and mechanical properties Abbreviated Journal
Volume 71 Issue 3 Pages 605-630
Keywords (down) A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication London Editor
Language Wos A1995QQ40400009 Publication Date 2007-07-08
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0141-8610;1460-6992; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor Times cited 72 Open Access
Notes Approved no
Call Number UA @ lucian @ c:irua:13290 Serial 969
Permanent link to this record
 

 
Author Buschmann, V.; Schryvers, D.; van Landuyt, J.; van Roost, C.
Title EM study of sensitisation of silver halide grains Type A1 Journal article
Year 1994 Publication Icem Abbreviated Journal
Volume 13 Issue Pages
Keywords (down) A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos A1994BE09Y00185 Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Additional Links UA library record; WoS full record;
Impact Factor Times cited Open Access
Notes Approved CHEMISTRY, PHYSICAL 77/144 Q3 # MATHEMATICS, INTERDISCIPLINARY 19/101 Q1 # PHYSICS, ATOMIC, MOLECULAR & CHEMICAL 17/35 Q2 #
Call Number UA @ lucian @ c:irua:10607 Serial 1030
Permanent link to this record
 

 
Author Romano-Rodriguez, A.; Perez-Rodriguez, A.; Serre, C.; van Landuyt, J.; et al.
Title Epitaxial growth of \beta-SiC on ion-beam synthesized \beta-SiC : structural characterization Type A1 Journal article
Year 2000 Publication Materials science forum T2 – International Conference on Silicon Carbide and Related Materials, OCT 10-15, 1999, RES TRIANGLE PK, NORTH CAROLINA Abbreviated Journal Mater Sci Forum
Volume 338-3 Issue Pages 309-312
Keywords (down) A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract In this work we present for the first time, to our knowledge, the CVD epitaxial growth of beta -SiC using an ion beam synthesized (IBS) beta -SiC layer as seed, which has been formed by multiple implantation into Si wafers at 500 degreesC. The ion beam synthesized continuous layer is constituted by beta -SiC nanocrystals that are well oriented relative to the silicon substrate. Comparison of the epitaxial growth on these samples with that on silicon test samples, both on and off-axis, is performed. The results show that the epitaxial growth can be achieved on the IBS samples without the need of the carbonization step and that the structural quality of the CVD layer is comparable to that obtained on a carbonized silicon sample. Improvement of the quality of the deposited layer is proposed.
Address
Corporate Author Thesis
Publisher Trans tech publications ltd Place of Publication Zurich-uetikon Editor
Language Wos 000165996700075 Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0255-5476 ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor Times cited 2 Open Access
Notes Approved Most recent IF: NA
Call Number UA @ lucian @ c:irua:104262 Serial 1071
Permanent link to this record
 

 
Author Ranjan, R.; Pandey, D.; Schuddinck, W.; Richard, O.; De Meulenaere, P.; van Landuyt, J.; Van Tendeloo, G.
Title Evolution of crystallographic phases in (Sr1-xCax)TiO3 with composition (x) Type A1 Journal article
Year 2001 Publication Journal of solid state chemistry Abbreviated Journal J Solid State Chem
Volume 162 Issue 1 Pages 20-28
Keywords (down) A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication London Editor
Language Wos 000172586400003 Publication Date 2002-09-18
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0022-4596; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 2.299 Times cited 45 Open Access
Notes Approved Most recent IF: 2.299; 2001 IF: 1.614
Call Number UA @ lucian @ c:irua:54711 Serial 1098
Permanent link to this record
 

 
Author Fedina, L.; Gutakovskii, A.; Aseev, A.; van Landuyt, J.; Vanhellemont, J.
Title Extended defects formation in Si crystals by clustering of intrinsic point defects studied by in-situ electron irradiation in an HREM Type A1 Journal article
Year 1999 Publication Physica status solidi: A: applied research T2 – International Conference on Extended Defects in Semiconductors (EDS 98), Sept. 06-11, 1998, Jaszowiec, Poland Abbreviated Journal Phys Status Solidi A
Volume 171 Issue 1 Pages 147-157
Keywords (down) A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract In situ irradiation experiments in a high resolution electron microscope JEOL-4000EX at room temperature resulted in discovery of the isolated and combined clustering of vacancies and self-interstitial atoms on {111}- and {113}-habit planes both leading to an extended defect formation in Si crystals. The type of the defect is strongly affected by the type of supersaturation of point defects depending on the crystal thickness during electron irradiation. Because of the existence of energy barriers against recombination of interstitials with the extended aggregates of vacancies, a large family of intermediate defect configurations (IDCs) is formed on {113}- and {111}-habit planes at a low temperature under interstitial supersaturation in addition to the well-known {133}-defects of interstitial type. The formation of metastable IDCs inside vacancy aggregates prevents a way of recombination of defects in extended shape.
Address
Corporate Author Thesis
Publisher Wiley Place of Publication Berlin Editor
Language Wos 000078539700020 Publication Date 2002-09-10
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0031-8965;1521-396X; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor Times cited 40 Open Access
Notes Approved Most recent IF: NA
Call Number UA @ lucian @ c:irua:95798 Serial 1152
Permanent link to this record
 

 
Author Fedina, L.; Gutakovskii, A.; Aseev, A.; van Landuyt, J.; Vanhellemont, J.
Title Extended defects formation in Si crystals by clustering of intrinsic point defects studied by in-situ irradiation in an HREM Type A1 Journal article
Year 1999 Publication Physica status solidi: A: applied research Abbreviated Journal Phys Status Solidi A
Volume 171 Issue 1 Pages 147-157
Keywords (down) A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Berlin Editor
Language Wos 000078539700020 Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0031-8965 ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor Times cited 40 Open Access
Notes Approved Most recent IF: NA
Call Number UA @ lucian @ c:irua:29687 Serial 1153
Permanent link to this record
 

 
Author Frangis, N.; Stoemenos, J.; van Landuyt, J.; Nejim, A.; Hemment, P.L.F.
Title The formation of 3C-SiC in crystalline Si by carbon implantation at 9500C and annealing: a structural study Type A1 Journal article
Year 1997 Publication Journal of crystal growth Abbreviated Journal J Cryst Growth
Volume 181 Issue Pages 218-228
Keywords (down) A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Amsterdam Editor
Language Wos A1997YD52700007 Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0022-0248 ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.751 Times cited 9 Open Access
Notes Approved Most recent IF: 1.751; 1997 IF: 1.259
Call Number UA @ lucian @ c:irua:21415 Serial 1253
Permanent link to this record
 

 
Author Hole, D.E.; Townsend, P.D.; Barton, J.D.; Nistor, L.C.; van Landuyt, J.
Title Gallium colloid formation during ion implantation of glass Type A1 Journal article
Year 1995 Publication Journal of non-crystalline solids Abbreviated Journal J Non-Cryst Solids
Volume 180 Issue Pages 266-274
Keywords (down) A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Amsterdam Editor
Language Wos A1995QB59400018 Publication Date 2002-07-25
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0022-3093; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.766 Times cited 34 Open Access
Notes Approved PHYSICS, APPLIED 28/145 Q1 #
Call Number UA @ lucian @ c:irua:13288 Serial 1313
Permanent link to this record
 

 
Author Van Tendeloo, G.; Amelinckx, S.; van Landuyt, J.
Title Graphene textures: tubules and whiskers related to fullerene crystallography Type A1 Journal article
Year 1993 Publication Acta crystallographica: section A: foundations of crystallography Abbreviated Journal Acta Crystallogr A
Volume 49 Issue Pages 355
Keywords (down) A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Copenhagen Editor
Language Wos Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0108-7673 ISBN Additional Links UA library record
Impact Factor 2.307 Times cited Open Access
Notes Approved no
Call Number UA @ lucian @ c:irua:6842 Serial 1378
Permanent link to this record
 

 
Author Frangis, N.; van Landuyt, J.; Kaltsas, G.; Travlos, A.; Nassiopoulos, A.G.
Title Growth of erbium-silicide films on (100) silicon as characterised by electron microscopy and diffraction Type A1 Journal article
Year 1997 Publication Journal of crystal growth Abbreviated Journal J Cryst Growth
Volume 172 Issue Pages 175-182
Keywords (down) A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Amsterdam Editor
Language Wos A1997WL48900024 Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0022-0248 ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.751 Times cited 29 Open Access
Notes Approved Most recent IF: 1.751; 1997 IF: 1.259
Call Number UA @ lucian @ c:irua:21402 Serial 1394
Permanent link to this record
 

 
Author Kaltsas, G.; Travlos, A.; Nassiopoulos, A.G.; Frangis, N.; van Landuyt, J.
Title High crystalline quality erbium silicide films on (100) silicon grown in high vacuum Type A1 Journal article
Year 1996 Publication Applied surface science Abbreviated Journal Appl Surf Sci
Volume 102 Issue Pages 151-155
Keywords (down) A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Amsterdam Editor
Language Wos A1996VJ86100034 Publication Date 2003-05-12
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0169-4332; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 2.711 Times cited 14 Open Access
Notes Approved no
Call Number UA @ lucian @ c:irua:15459 Serial 1423
Permanent link to this record
 

 
Author Nistor, L.; Nistor, S.V.; Dincã, G.; van Landuyt, J.; Schoemaker, D.; Copaciu, V.; Georgeoni, P.; Arnici, N.
Title High resolution electron microscopy and electron spin resonance studies on cubic boron nitride crystals made by high-pressure/high-temperature synthesis Type A1 Journal article
Year 1999 Publication Diamonds an related materials Abbreviated Journal Diam Relat Mater
Volume 8 Issue Pages 738-742
Keywords (down) A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos 000080437000123 Publication Date 2002-07-25
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0925-9635; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 2.561 Times cited 7 Open Access
Notes Approved Most recent IF: 2.561; 1999 IF: 1.924
Call Number UA @ lucian @ c:irua:27519 Serial 1445
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Author Frangis, N.; van Landuyt, J.; Lartiprete, R.; Martelli, S.; Borsella, E.; Chiussi, S.; Castro, J.; Leon, B.
Title High resolution electron microscopy and X-ray photoelectron spectroscopy studies of heteroepitaxial SixGe1-x alloys produced through laser induced processing Type A1 Journal article
Year 1998 Publication Applied physics letters Abbreviated Journal Appl Phys Lett
Volume 72 Issue 22 Pages 2877-2879
Keywords (down) A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher American Institute of Physics Place of Publication New York, N.Y. Editor
Language Wos 000075273700034 Publication Date 2002-07-26
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0003-6951; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 3.411 Times cited 16 Open Access
Notes Approved Most recent IF: 3.411; 1998 IF: 3.349
Call Number UA @ lucian @ c:irua:29684 Serial 1447
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Author Teodorescu, V.S.; Nistor, L.C.; van Landuyt, J.
Title High resolution TEM observation of in situ colloid formation in CaF2 crystals Type A1 Journal article
Year 1997 Publication Materials science forum Abbreviated Journal
Volume 239-241 Issue Pages 671-674
Keywords (down) A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Lausanne Editor
Language Wos A1997BH33W00145 Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0255-5476; 1662-9752 ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor Times cited 3 Open Access
Notes Approved Most recent IF: NA
Call Number UA @ lucian @ c:irua:21404 Serial 1460
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Author Volkov, V.V.; Van Tendeloo, G.; van Landuyt, J.; Amelinckx, S.; Busheva, E.E.; Shabunina, G.G.; Aminov, T.G.; Novotortsev, V.M.
Title HREM image analysis up to structure determination of SbCrSe3: a new 1D ferromagnet Type A1 Journal article
Year 1997 Publication Journal of solid state chemistry Abbreviated Journal J Solid State Chem
Volume 132 Issue Pages 257-266
Keywords (down) A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication London Editor
Language Wos A1997YE01700005 Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0022-4596 ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 2.299 Times cited 1 Open Access
Notes Approved Most recent IF: 2.299; 1997 IF: 1.486
Call Number UA @ lucian @ c:irua:21421 Serial 1500
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Author Nistor, L.; Bender, H.; van Landuyt, J.; Nemeth, S.; Boeve, H.; De Boeck, J.; Borghs, G.
Title HREM investigation of a Fe/GaN/Fe tunnel junction Type A1 Journal article
Year 2001 Publication Institute of physics conference series T2 – Royal-Microscopical-Society Conference on Microscopy of Semiconducting, Materials, MAR 25-29, 2001, Univ of Oxford, Oxford, England Abbreviated Journal
Volume Issue 169 Pages 53-56
Keywords (down) A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract The structure of Fe/GaN/Fe ferromagnetic electrodes is studied by high resolution transmission electron microscopy. The layers grow epitaxially on the GaAs substrate with the top Fe layer 90degrees rotated compared to the bottom one. The interfaces are quite rough. There is an indication of the possible occurrence of Fe3GaAs formation on the GaAs interface.
Address
Corporate Author Thesis
Publisher IOP Publishing Place of Publication Bristol Editor
Language Wos Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0-7503-0818-4 ISBN Additional Links UA library record; WoS full record;
Impact Factor Times cited Open Access
Notes Approved Most recent IF: NA
Call Number UA @ lucian @ c:irua:95715 Serial 1503
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