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Author Piñera, I.; Abreu, Y.; van Espen, P.; Diaz, A.; Leyva, A.; Cruz, C.M.
  Title Radiation damage evaluation on LYSO and LuYAP materials through Dpa calculation assisted by Monte Carlo method Type P1 Proceeding
  Year 2011 Publication IEEE conference record T2 – IEEE Nuclear Science Symposium/Medical Imaging Conference (NSS/MIC)/18th, International Workshop on Room-Temperature Semiconductor X-Ray and, Gamma-Ray Detectors, OCT 23-29, 2011, Valencia, SPAIN Abbreviated Journal
  Volume Issue Pages 1609-1611
  Keywords (up) P1 Proceeding; Engineering sciences. Technology; AXES (Antwerp X-ray Analysis, Electrochemistry and Speciation)
  Abstract The aim of the present work is to study the radiation damage induced in LYSO and LuYAP crystals by the gamma radiation and the secondary electrons/positrons generated. The displacements per atom (dpa) distributions inside each material were calculated following the Monte Carlo assisted Classical Method (MCCM) introduced by the authors. As gamma sources were used Sc-44, Na-22 and V-48. Also the energy of gammas from the annihilation processes (511 keV) was included in the study. This procedure allowed studying the in-depth dpa distributions inside each crystal for all four sources. It was also possible to obtain the separate contribution from each atom to the total dpa. The LYSO crystals were found to receive more damage, mainly provoked by the displacements of silicon and oxygen atoms.
  Address
  Corporate Author Thesis
  Publisher Place of Publication Editor
  Language Wos 000304755601169 Publication Date
  Series Editor Series Title Abbreviated Series Title
  Series Volume Series Issue Edition
  ISSN 978-1-4673-0120-6 ISBN Additional Links UA library record; WoS full record; WoS citing articles
  Impact Factor Times cited Open Access
  Notes Approved no
  Call Number UA @ admin @ c:irua:113072 Serial 8447
Permanent link to this record
 
 
Author Storme, P.; Selucká, A.; Rapouch, K.; Mazík, M.; Vanmeert, F.; Janssens, K.; Van de Voorde, L.; Vekemans, B.; Vincze, L.; Caen, J.; De Wael, K.
  Title Composition and corrosion forms on archaeological and non-archaeological historic printing letters from the Moravian Museum, Memorial of Kralice Bible, the Czech Republic and the Museum Plantin-Moretus Antwerp, Belgium Type P1 Proceeding
  Year 2015 Publication Abbreviated Journal
  Volume Issue Pages 59-65
  Keywords (up) P1 Proceeding; Engineering sciences. Technology; AXES (Antwerp X-ray Analysis, Electrochemistry and Speciation); Antwerp Cultural Heritage Sciences (ARCHES)
  Abstract
  Address
  Corporate Author Thesis
  Publisher Place of Publication Editor
  Language Wos Publication Date
  Series Editor Series Title Abbreviated Series Title
  Series Volume Series Issue Edition
  ISSN 978-2-87522-152-0; 0770-8505 ISBN Additional Links UA library record
  Impact Factor Times cited Open Access
  Notes Approved Most recent IF: NA
  Call Number UA @ admin @ c:irua:126909 Serial 5535
Permanent link to this record
 
 
Author Avetisyan, A.A.; Partoens, B.; Peeters, F.M.
  Title Electric field tuning of the band gap in four layers of graphene with different stacking order Type P1 Proceeding
  Year 2012 Publication Proceedings of the Society of Photo-optical Instrumentation Engineers T2 – Conference on Photonics and Micro and Nano-structured Materials, JUN 28-30, 2011, Yerevan, ARMENIA Abbreviated Journal
  Volume Issue Pages 84140-84148
  Keywords (up) P1 Proceeding; Engineering sciences. Technology; Condensed Matter Theory (CMT)
  Abstract We investigated the effect of different stacking order of the four graphene layer system on the induced band gap when positively charged top and negatively charged back gates are applied to the system. A tight-binding approach within a self-consistent Hartree approximation is used to calculate the induced charges on the different graphene layers. We show that the electric field does not open an energy gap if the multilayer graphene system contains a trilayer part with the ABA Bernal stacking.
  Address
  Corporate Author Thesis
  Publisher Place of Publication Editor
  Language Wos 000303856600012 Publication Date 2012-01-20
  Series Editor Series Title Abbreviated Series Title
  Series Volume 8414 Series Issue Edition
  ISSN ISBN Additional Links UA library record; WoS full record
  Impact Factor Times cited Open Access
  Notes ; This work was supported by the Flemish Science Foundation (FWO-Vl), and the BelgianScience Policy (IAP). One of us (A.A.A.) was supported by a fellowship from the Belgian Federal Science Policy Office (BELSPO). ; Approved Most recent IF: NA
  Call Number UA @ lucian @ c:irua:113046 Serial 886
Permanent link to this record
 
 
Author Nguyen, N.T.T.; Peeters, F.M.
  Title Phase-diagram for the magnetic states of the Mn-ion subsystem in a magnetic quantum dot Type P1 Proceeding
  Year 2010 Publication Journal of physics : conference series T2 – Conference on Quantum Dots 2010 (QD2010), APR 26-30, 2010, Nottingham, ENGLAND Abbreviated Journal
  Volume Issue Pages 012032-12034
  Keywords (up) P1 Proceeding; Engineering sciences. Technology; Condensed Matter Theory (CMT)
  Abstract The interplay between two types of spin-spin exchange interaction (namely of the electron with the Mn-ions and the Mn-ions with each other) that are governed by the positions of the Mn-ions and the magnetic field is studied in the case of a Mn-ion doped CdTe quantum dot. We investigate the formation of different magnetic phases and the existence of frustrated magnetic states due to the dominant contribution of the Mn-Mn energy.
  Address
  Corporate Author Thesis
  Publisher Place of Publication Bristol Editor
  Language Wos 000294907400032 Publication Date 2010-09-21
  Series Editor Series Title Abbreviated Series Title
  Series Volume 245 Series Issue Edition
  ISSN 1742-6596; ISBN Additional Links UA library record; WoS full record
  Impact Factor Times cited Open Access
  Notes ; ; Approved Most recent IF: NA
  Call Number UA @ lucian @ c:irua:113081 Serial 2582
Permanent link to this record
 
 
Author Djotyan, A.P.; Avetisyan, A.A.; Hao, Y.L.; Peeters, F.M.
  Title Shallow donor near a semiconductor surface in the presence of locally spherical scanning tunneling microscope tip Type P1 Proceeding
  Year 2012 Publication Proceedings of the Society of Photo-optical Instrumentation Engineers T2 – Conference on Photonics and Micro and Nano-structured Materials, JUN 28-30, 2011, Yerevan, ARMENIA Abbreviated Journal
  Volume Issue Pages 84140-84148
  Keywords (up) P1 Proceeding; Engineering sciences. Technology; Condensed Matter Theory (CMT)
  Abstract We developed a variational approach to investigate the ground state energy and the extend of the wavefunction of a neutral donor located near a semiconductor surface in the presence of scanning tunneling microscope (STM) metallic tip. We apply the effective mass approximation and use a variational wavefunction that takes into account the influence of all image charges that arise due to the presence of a metallic tip. The behavior of the ground state energy when the tip approaches the semiconductor surface is investigated.
  Address
  Corporate Author Thesis
  Publisher Place of Publication Editor
  Language Wos 000303856600020 Publication Date 2012-01-20
  Series Editor Series Title Abbreviated Series Title
  Series Volume 8414 Series Issue Edition
  ISSN ISBN Additional Links UA library record; WoS full record
  Impact Factor Times cited Open Access
  Notes ; This work was supported by the Flemish Science Foundation (FWO-Vl), and the Belgian Science Policy. One of us (AAA) was supported by a fellowship from the Belgian Federal Science Policy Office (Belspo). ; Approved Most recent IF: NA
  Call Number UA @ lucian @ c:irua:113047 Serial 2987
Permanent link to this record
 
 
Author Nguyen, N.T.T.; Peeters, F.M.
  Title The breakdown of Kohn's theorem in few-electron parabolic quantum dots doped with a single magnetic impurity Mn2+ Type P1 Proceeding
  Year 2010 Publication Journal of physics : conference series T2 – Conference on Quantum Dots 2010 (QD2010), APR 26-30, 2010, Nottingham, ENGLAND Abbreviated Journal
  Volume Issue Pages 012031-12034
  Keywords (up) P1 Proceeding; Engineering sciences. Technology; Condensed Matter Theory (CMT)
  Abstract The cyclotron resonance (CR) absorption spectrum is calculated for a II-VI parabolic quantum dot (QD) containing few electrons and a single magnetic dopant (Mn(2+)). We find that Kohn's theorem no longer holds for this system and that the CR spectrum depends on the number of electrons inside the QD. The electron-Mn-ion interaction strength can be tuned for example by the magnetic field and by moving the Mn-ion to different positions inside the QD. We demonstrate that due to the presence of the Mn-ion the relative motion of the electrons couple with their center-of-mass motion through the electron-Mn-ion spin-spin exchange term resulting in an electron-electron interaction dependence of the magneto-optical absorption spectrum. At the ferromagnetic-antiferromagnetic transition we observe significant discontinuities in the CR lines.
  Address
  Corporate Author Thesis
  Publisher Place of Publication Bristol Editor
  Language Wos 000294907400031 Publication Date 2010-09-21
  Series Editor Series Title Abbreviated Series Title
  Series Volume 245 Series Issue Edition
  ISSN 1742-6596; ISBN Additional Links UA library record; WoS full record; WoS citing articles
  Impact Factor Times cited 1 Open Access
  Notes ; ; Approved Most recent IF: NA
  Call Number UA @ lucian @ c:irua:113080 Serial 3572
Permanent link to this record
 
 
Author Moldovan, D.; Peeters, F.M.
  Title Atomic Collapse in Graphene Type P1 Proceeding
  Year 2016 Publication Nanomaterials For Security Abbreviated Journal
  Volume Issue Pages 3-17
  Keywords (up) P1 Proceeding; Engineering sciences. Technology; Condensed Matter Theory (CMT)
  Abstract When the charge Z of an atom exceeds the critical value of 170, it will undergo a process called atomic collapse which triggers the spontaneous creation of electron-positron pairs. The high charge requirements have prevented the observation of this phenomenon with real atomic nuclei. However, thanks to the relativistic nature of the carriers in graphene, the same physics is accessible at a much lower scale. The atomic collapse analogue in graphene is realized using artificial nuclei which can be created via the deposition of impurities on the surface of graphene or using charged vacancies. These supercritically charged artificial nuclei trap electrons in a sequence of quasi-bound states which can be observed experimentally as resonances in the local density of states.
  Address
  Corporate Author Thesis
  Publisher Springer Place of Publication Dordrecht Editor
  Language Wos 000386506200001 Publication Date 2016-07-20
  Series Editor Series Title Abbreviated Series Title
  Series Volume Series Issue Edition
  ISSN 978-94-017-7593-9; 978-94-017-7591-5 ISBN Additional Links UA library record; WoS full record; WoS citing articles
  Impact Factor Times cited 3 Open Access
  Notes ; ; Approved Most recent IF: NA
  Call Number UA @ lucian @ c:irua:138237 Serial 4348
Permanent link to this record
 
 
Author Tiwari, S.; Van de Put, M.L.; Sorée, B.; Vandenberghe, W.G.
  Title Ab initio modeling of few-layer dilute magnetic semiconductors Type P1 Proceeding
  Year 2021 Publication International Conference on Simulation of Semiconductor Processes and Devices : [proceedings] T2 – International Conference on Simulation of Semiconductor Processes and, Devices (SISPAD), SEP 27-29, 2021, Dallas, TX Abbreviated Journal
  Volume Issue Pages 141-145
  Keywords (up) P1 Proceeding; Engineering sciences. Technology; Condensed Matter Theory (CMT)
  Abstract We present a computational model to model the magnetic structure of two-dimensional (2D) dilute-magnetic-semiconductors (DMS) both the monolayers and multilayers using first-principles density functional theory (DFT), as well as their magnetic phase transition as a function of temperature using Monte-Carlo simulations. Using our method, we model the magnetic structure of bulk, bilayer, and monolayer MoS2 substitutionally doped with Fe atoms. We find that the out-of-plane interaction in bilayer MoS2 is weakly ferromagnetic, whereas in bulk MoS2 it is strongly anti-ferromagnetic. Finally, we show that the magnetic order is more robust in bilayer Fe-doped MoS2 compared to the monolayer and results in a room-temperature FM at an atomic substitution of 14-16%.
  Address
  Corporate Author Thesis
  Publisher Place of Publication Editor
  Language Wos 000766985400034 Publication Date 2021-11-08
  Series Editor Series Title Abbreviated Series Title
  Series Volume Series Issue Edition
  ISSN 978-1-6654-0685-7 ISBN Additional Links UA library record; WoS full record
  Impact Factor Times cited Open Access Not_Open_Access
  Notes Approved Most recent IF: NA
  Call Number UA @ admin @ c:irua:187291 Serial 7401
Permanent link to this record
 
 
Author Tiwari, S.; Van de Put, M.L.; Sorée, B.; Vandenberghe, W.G.
  Title Carrier transport in a two-dimensional topological insulator nanoribbon in the presence of vacancy defects Type P1 Proceeding
  Year 2018 Publication International Conference on Simulation of Semiconductor Processes and Devices : [proceedings] T2 – International Conference on Simulation of Semiconductor Processes and, Devices (SISPAD), SEP 24-26, 2018, Austin, TX Abbreviated Journal
  Volume Issue Pages 92-96
  Keywords (up) P1 Proceeding; Engineering sciences. Technology; Condensed Matter Theory (CMT)
  Abstract We model transport through two-dimensional topological insulator (TI) nanoribbons. To model the quantum transport, we employ the non-equilibrium Green's function approach. With the presented approach, we study the effect of lattice imperfections on the carrier transport. We observe that the topologically protected edge states of TIs are robust against a high percentage (2%) of vacancy defects. We also investigate tunneling of the edge states in two decoupled TI nanoribbons.
  Address
  Corporate Author Thesis
  Publisher Place of Publication Editor
  Language Wos 000516619300024 Publication Date 2018-12-08
  Series Editor Series Title Abbreviated Series Title
  Series Volume Series Issue Edition
  ISSN 978-1-5386-6790-3; 1946-1577; 978-1-5386-6791-0 ISBN Additional Links UA library record; WoS full record; WoS citing articles
  Impact Factor Times cited Open Access
  Notes Approved no
  Call Number UA @ admin @ c:irua:181281 Serial 7579
Permanent link to this record
 
 
Author Pourtois, G.; Dabral, A.; Sankaran, K.; Magnus, W.; Yu, H.; de de Meux, A.J.; Lu, A.K.A.; Clima, S.; Stokbro, K.; Schaekers, M.; Houssa, M.; Collaert, N.; Horiguchi, N.
  Title Probing the intrinsic limitations of the contact resistance of metal/semiconductor interfaces through atomistic simulations Type P1 Proceeding
  Year 2017 Publication Semiconductors, Dielectrics, And Metals For Nanoelectronics 15: In Memory Of Samares Kar Abbreviated Journal
  Volume Issue Pages 303-311
  Keywords (up) P1 Proceeding; Engineering sciences. Technology; Condensed Matter Theory (CMT); Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
  Abstract In this contribution, we report a fundamental study of the factors that set the contact resistivity between metals and highly doped semiconductors. We investigate the case of n-type doped Si contacted with amorphous TiSi combining first-principles calculations with Non-Equilibrium Green functions transport simulations. The intrinsic contact resistivity is found to saturate at similar to 2x10(-10) Omega.cm(2) with the doping concentration and sets an intrinsic limit to the ultimate contact resistance achievable for n-doped Si vertical bar amorphous-TiSi. This limit arises from the intrinsic properties of the semiconductor and of the metal such as their electron effective masses and Fermi energies. We illustrate that, in this regime, contacting metals with a heavy electron effective mass helps reducing the interface intrinsic contact resistivity.
  Address
  Corporate Author Thesis
  Publisher Electrochemical soc inc Place of Publication Pennington Editor
  Language Wos 000426271800028 Publication Date 2017-10-17
  Series Editor Series Title Abbreviated Series Title
  Series Volume 80 Series Issue 1 Edition
  ISSN 978-1-62332-470-4; 978-1-60768-818-1 ISBN Additional Links UA library record; WoS full record; WoS citing articles
  Impact Factor Times cited 1 Open Access Not_Open_Access
  Notes ; ; Approved Most recent IF: NA
  Call Number UA @ lucian @ c:irua:149966 Serial 4976
Permanent link to this record
 
 
Author Kalesaki, E.; Boneschanscher, M.P.; Geuchies, J.J.; Delerue, C.; Morais Smith, C.; Evers, W.H.; Allan, G.; Altantzis, T.; Bals, S.; Vanmaekelbergh, D.
  Title Preparation and study of 2-D semiconductors with Dirac type bands due to the honeycomb nanogeometry Type P1 Proceeding
  Year 2014 Publication Proceedings of the Society of Photo-optical Instrumentation Engineers T2 – Proceedings of SPIE Abbreviated Journal
  Volume 8981 Issue Pages 898107-898107
  Keywords (up) P1 Proceeding; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
  Abstract The interest in 2-dimensional systems with a honeycomb lattice and related Dirac-­type electronic bands has exceeded the prototype graphene1. Currently, 2-­dimensional atomic2,3 and nanoscale4-­8 systems are extensively investigated in the search for materials with novel electronic properties that can be tailored by geometry. The immediate question that arises is how to fabricate 2-­D semiconductors that have a honeycomb nanogeometry, and as a consequence of that, display a Dirac-­type band structure? Here, we show that atomically coherent honeycomb superlattices of rocksalt (PbSe, PbTe) and zincblende (CdSe, CdTe) semiconductors can be obtained by nanocrystal self-­assembly and facet-­to-­facet atomic bonding, and subsequent cation exchange. We present a extended structural analysis of atomically coherent 2-­D honeycomb structures that were recently obtained with self-assembly and facet-­to-­facet bonding9. We show that this process may in principle lead to three different types of honeycomb structures, one with a graphene type-­, and two others with a silicene-­type structure. Using TEM, electron diffraction, STM and GISAXS it is convincingly shown that the structures are from the silicene-­type. In the second part of this work, we describe the electronic structure of graphene-­type and silicene type honeycomb semiconductors. We present the results of advanced electronic structure calculations using the sp3d5s* atomistic tight-­binding method10. For simplicity, we focus on semiconductors with a simple and single conduction band for the native bulk semiconductor. When the 3-­D geometry is changed into 2-­D honeycomb, a conduction band structure transformation to two types of Dirac cones, one for S-­ and one for P-­orbitals, is observed. The width of the bands depends on the honeycomb period and the coupling between the nanocrystals. Furthermore, there is a dispersionless P-­orbital band, which also forms a landmark of the honeycomb structure. The effects of considerable intrinsic spin-­orbit coupling are briefly considered. For heavy-­element compounds such as CdTe, strong intrinsic spin-­‐orbit coupling opens a non-­trivial gap at the P-­orbital Dirac point, leading to a quantum Spin Hall effect10-­12. Our work shows that well known semiconductor crystals, known for centuries, can lead to systems with entirely new electronic properties, by the simple action of nanogeometry. It can be foreseen that such structures will play a key role in future opto-­electronic applications, provided that they can be fabricated in a straightforward way.
  Address
  Corporate Author Thesis
  Publisher Place of Publication Editor
  Language Wos 000336040600004 Publication Date 2014-03-07
  Series Editor Series Title Abbreviated Series Title
  Series Volume Series Issue Edition
  ISSN ISBN Additional Links UA library record; WoS full record; WoS citing articles
  Impact Factor Times cited 2 Open Access OpenAccess
  Notes This work has been supported by funding of the French National Research Agency [ANR, (ANR-­‐09-­‐BLAN-­‐0421-­‐01)], NWO and the Dutch organization FOM [Programs “Control over Functional Nanoparticle Solids” (FNPS) and “Designing Dirac Carriers in Semiconductors” Approved Most recent IF: NA
  Call Number c:irua:131912 Serial 4039
Permanent link to this record
 
 
Author Conings, B.; Babayigit, A.; Klug, M.; Bai, S.; Gauquelin, N.; Sakai, N.; Wang, J.T.-W.; Verbeeck, J.; Boyen, H.-G.; Snaith, H.
  Title Getting rid of anti-solvents: gas quenching for high performance perovskite solar cells Type P1 Proceeding
  Year 2018 Publication 2018 Ieee 7th World Conference On Photovoltaic Energy Conversion (wcpec)(a Joint Conference Of 45th Ieee Pvsc, 28th Pvsec & 34th Eu Pvsec) Abbreviated Journal
  Volume Issue Pages
  Keywords (up) P1 Proceeding; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
  Abstract As the field of perovskite optoelectronics developed, a plethora of strategies has arisen to control their electronic and morphological characteristics for the purpose of producing high efficiency devices. Unfortunately, despite this wealth of deposition approaches, the community experiences a great deal of irreproducibility between different laboratories, batches and preparation methods. Aiming to address this issue, we developed a simple deposition method based on gas quenching that yields smooth films for a wide range of perovskite compositions, in single, double, triple and quadruple cation varieties, and produces planar heterojunction devices with competitive efficiencies, so far up to 20%.
  Address
  Corporate Author Thesis
  Publisher Place of Publication Editor
  Language Wos 000469200401163 Publication Date 2018-12-08
  Series Editor Series Title Abbreviated Series Title
  Series Volume Series Issue Edition
  ISSN 978-1-5386-8529-7 ISBN Additional Links UA library record; WoS full record; WoS citing articles
  Impact Factor Times cited Open Access
  Notes Approved Most recent IF: NA
  Call Number UA @ admin @ c:irua:160468 Serial 5365
Permanent link to this record
 
 
Author Zhang, Z.; Bourgeois, L.; Zhang, Y.; Rosalie, J.M.; Medhekar, N.
  Title Advanced imaging and simulations of precipitate interfaces in aluminium alloys and their role in phase transformations Type P1 Proceeding
  Year 2020 Publication MATEC web of conferences T2 – 17th International Conference on Aluminium Alloys (ICAA), October 26-29, 2020 Abbreviated Journal
  Volume Issue Pages 09003
  Keywords (up) P1 Proceeding; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
  Abstract Precipitation is accompanied by the formation and migration of heterophase interfaces. Using the combined approach of advanced imaging and atomistic simulations, we studied the precipitate-matrix interfaces in various aluminium alloy systems, aiming to resolve their detailed atomic structures and illuminate their role in phase transformations.
  Address
  Corporate Author Thesis
  Publisher Place of Publication Editor
  Language Wos 000652552200053 Publication Date 2020-11-05
  Series Editor Series Title Abbreviated Series Title
  Series Volume 326 Series Issue Edition
  ISSN 2261-236x; 2274-7214 ISBN Additional Links UA library record; WoS full record
  Impact Factor Times cited Open Access
  Notes Approved Most recent IF: NA
  Call Number UA @ admin @ c:irua:179147 Serial 6851
Permanent link to this record
 
 
Author Brammertz, G.; Buffiere, M.; Verbist, C.; Bekaert, J.; Batuk, M.; Hadermann, J.; et al.
  Title Process variability in Cu2ZnSnSe4 solar cell devices: Electrical and structural investigations Type P1 Proceeding
  Year 2015 Publication The conference record of the IEEE Photovoltaic Specialists Conference T2 – IEEE 42nd Photovoltaic Specialist Conference (PVSC), JUN 14-19, 2015, New Orleans, LA Abbreviated Journal
  Volume Issue Pages
  Keywords (up) P1 Proceeding; Engineering sciences. Technology; Electron microscopy for materials research (EMAT); Condensed Matter Theory (CMT)
  Abstract We have fabricated 9.7% efficient Cu2ZnSnSe4/CdS/ZnO solar cells by H2Se selenization of sequentially sputtered metal layers. Despite the good efficiency obtained, process control appears to be difficult. In the present contribution we compare the electrical and physical properties of two devices with nominal same fabrication procedure, but 1% and 9.7% power conversion efficiency respectively. We identify the problem of the lower performing device to be the segregation of ZnSe phases at the backside of the sample. This ZnSe seems to be the reason for the strong bias dependent photocurrent observed in the lower performing devices, as it adds a potential barrier for carrier collection. The reason for the different behavior of the two nominally same devices is not fully understood, but speculated to be related to sputtering variability.
  Address
  Corporate Author Thesis
  Publisher Ieee Place of Publication New york Editor
  Language Wos Publication Date
  Series Editor Series Title Abbreviated Series Title
  Series Volume Series Issue Edition
  ISSN 978-1-4799-7944-8 ISBN Additional Links UA library record; WoS full record
  Impact Factor Times cited Open Access
  Notes Approved Most recent IF: NA
  Call Number UA @ lucian @ c:irua:132335 Serial 4229
Permanent link to this record
 
 
Author Sankaran, K.; Clima, S.; Mees, M.; Adelmann, C.; Tokei, Z.; Pourtois, G.
  Title Exploring alternative metals to Cu and W for interconnects : an ab initio Insight Type P1 Proceeding
  Year 2014 Publication 2014 Ieee International Interconnect Technology Conference / Advanced Metallization Conference (iitc/amc) Abbreviated Journal
  Volume Issue Pages 193-195
  Keywords (up) P1 Proceeding; Engineering sciences. Technology; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
  Abstract The properties of alternative metals to Cu and W for interconnect applications are reviewed based on first-principles simulations and benchmarked in terms of intrinsic bulk resistivity and electromigration.
  Address
  Corporate Author Thesis
  Publisher Ieee Place of Publication New york Editor
  Language Wos Publication Date 0000-00-00
  Series Editor Series Title Abbreviated Series Title
  Series Volume Series Issue Edition
  ISSN 978-1-4799-5018-8 ISBN Additional Links UA library record; WoS full record;
  Impact Factor Times cited Open Access
  Notes Approved Most recent IF: NA
  Call Number UA @ lucian @ c:irua:127034 Serial 1149
Permanent link to this record
 
 
Author Charlier, E.; Gijbels, R.; Van Doorselaer, M.; De Keyzer, R.
  Title Functioning of thiocyanate ions during sulphur and sulphur-plus-gold Sensitization Type P1 Proceeding
  Year 2000 Publication Abbreviated Journal
  Volume Issue Pages 172-176
  Keywords (up) P1 Proceeding; Engineering sciences. Technology; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
  Abstract Not much about the effect of thiocyanate addition on the sulphur ripening is known, although it is used for many applications in photographic practice. Via a combination of tracer analysis and diffuse reflectance spectroscopy the effect of thiocyanate addition on the sulphur and sulphur-plus-gold ripening could be unveiled. When thiocyanate is added prior to the sulphur addition, it appears to rearrange the silver halide surface in such way that the sulphur deposition rate is enhanced, but the supply of interstitials is limited. Addition of thiocyanate after the sulphur reaction results in the formation of thiocyanate complexes with silver, from which a silver ion is more easily deposited in a surface cell of the silver sulphide clusters thus enhancing the sensitization rate. For sulphur-plus-gold sensitized emulsions it was observed that part of the gold ions could be removed out of the Ag2-xAuxS clusters by addition of thiocyanate ions and subsequent washing. Hence, it was concluded that two different types of gold ions are present in the silver sulphide clusters; 1. gold ions which are substitutional for silver (bound between sulphur and bromide ions) 2. gold ions which bridge two or three sulphur atoms. Incorporation of gold ions into silver sulphide clusters suppresses their optical absorption in diffuse reflectance spectroscopy. Since the optical absorption at 505 nm can completely be restored by addition of thiocyanate, it is assumed that the entity absorbing at this wavelength is a monomer of silver sulphide.
  Address
  Corporate Author Thesis
  Publisher Soc. imaging science technology Place of Publication Springfield Editor
  Language Wos 000183315900047 Publication Date 0000-00-00
  Series Editor Series Title Abbreviated Series Title
  Series Volume Series Issue Edition
  ISSN 0-89208-229-1 ISBN Additional Links UA library record; WoS full record;
  Impact Factor Times cited Open Access
  Notes Approved Most recent IF: NA
  Call Number UA @ lucian @ c:irua:95775 Serial 1307
Permanent link to this record
 
 
Author Clima, S.; O'Sullivan, B.J.; Ronchi, N.; Bardon, M.G.; Banerjee, K.; Van den Bosch, G.; Pourtois, G.; van Houdt, J.
  Title Ferroelectric switching in FEFET : physics of the atomic mechanism and switching dynamics in HfZrOx, HfO2 with oxygen vacancies and Si dopants Type P1 Proceeding
  Year 2020 Publication Abbreviated Journal
  Volume Issue Pages
  Keywords (up) P1 Proceeding; Engineering sciences. Technology; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
  Abstract The fine balance between dipole-field energy and anion drift force defines the switching mechanism during polarization reversal: for the first time we show that only Pbcm mechanism obeys the ferroelectric switching physics, whereas P4(2)/nmc (or any other) mechanism does not. However, with lower energy barrier, it represents an important antiferroelectric mechanism. Constraints relaxation can lead to 90 degrees polarization rotation (domain deactivation). Intrinsically, the Si/VO-doping can switch faster than undoped HfO2 or HfZrOx. Theoretical Arrhenius model / intrinsic material switching (DFT) overestimates the switching speed extracted from experiments.
  Address
  Corporate Author Thesis
  Publisher Place of Publication Editor
  Language Wos 000717011600218 Publication Date 2021-03-11
  Series Editor Series Title Abbreviated Series Title
  Series Volume Series Issue Edition
  ISSN 978-1-7281-8888-1 ISBN Additional Links UA library record; WoS full record; WoS citing articles
  Impact Factor Times cited Open Access
  Notes Approved Most recent IF: NA
  Call Number UA @ admin @ c:irua:184730 Serial 7963
Permanent link to this record
 
 
Author Mescia, L.; Lamacchia, C.M.; Chiapperino, M.A.; Bia, P.; Gielis, J.; Caratelli, D.
  Title Design of irregularly shaped lens antennas including supershaped feed Type P1 Proceeding
  Year 2019 Publication Progress in Electromagnetic Research Symposium (PIERS) T2 – 2019 PhotonIcs & Electromagnetics Research Symposium – Spring (PIERS-Spring), 17-20 June, 2019, Rome, Italy Abbreviated Journal
  Volume Issue Pages 169-173
  Keywords (up) P1 Proceeding; Engineering sciences. Technology; Sustainable Energy, Air and Water Technology (DuEL)
  Abstract A new class of irregularly shaped dielectric lens antennas with a supershaped microstrip antenna feeder is presented and detailed in this work. The surface of the lens antenna and the feeder shape have been modelled by using the three and two-dimensional Gielis formula, respectively. The antenna design has been carried out by integrating an home-made software tool with the CST Microwave Studio®. The radiation properties of the whole antenna system have been evaluated using a dedicated high-frequency technique based on the tube tracing approximation. Moreover, the effects due to the multiple internal reflections have been properly modeled. The proposed model was applied to study unusual and complex lens antenna systems with the aim to design special radiation characteristics.
  Address
  Corporate Author Thesis
  Publisher Place of Publication Editor
  Language Wos 000550769300021 Publication Date 2020-03-03
  Series Editor Series Title Abbreviated Series Title
  Series Volume Series Issue Edition
  ISSN 978-1-72813-403-1; 978-1-72813-404-8; 978-1-72813-403-1 ISBN Additional Links UA library record; WoS full record
  Impact Factor Times cited Open Access
  Notes Approved no
  Call Number UA @ admin @ c:irua:169169 Serial 7766
Permanent link to this record
 
 
Author Mescia, L.; Chiapperino, M.A.; Bia, P.; Lamacchia, C.M.; Gielis, J.; Caratelli, D.
  Title Multiphysics modelling of membrane electroporation in irregularly shaped cells Type P1 Proceeding
  Year 2019 Publication Progress in Electromagnetic Research Symposium (PIERS) T2 – 2019 PhotonIcs & Electromagnetics Research Symposium – Spring (PIERS-Spring), 17-20 June 2019, Rome, Italy Abbreviated Journal
  Volume Issue Pages 2992-2998
  Keywords (up) P1 Proceeding; Engineering sciences. Technology; Sustainable Energy, Air and Water Technology (DuEL)
  Abstract Electroporation is a non-thermal electromagnetic phenomenon widely used in medical diseases treatment. Different mathematical models of electroporation have been proposed in literature to study pore evolution in biological membranes. This paper presents a nonlinear dispersive multiphysic model of electroporation in irregular shaped biological cells in which the spatial and temporal evolution of the pores size is taken into account. The model solves Maxwell and asymptotic Smoluchowski equations and it describes the dielectric dispersion of cell media using a Debye-based relationship. Furthermore, the irregular cell shape has been modeled using the Gielis superformula. Taking into account the cell in mitosis phase, the electroporation process has been studied comparing the numerical results pertaining the model with variable pore radius with those in which the pore radius is supposed constant. The numerical analysis has been performed exposing the biological cell to a rectangular electric pulse having duration of 10 μs. The obtained numerical results highlight considerable differences between the two different models underling the need to include into the numerical algorithm the differential equation modeling the spatial and time evolution of the pores size.
  Address
  Corporate Author Thesis
  Publisher Place of Publication Editor
  Language Wos 000550769302159 Publication Date 2020-03-03
  Series Editor Series Title Abbreviated Series Title
  Series Volume Series Issue Edition
  ISSN 978-1-72813-404-8; 978-1-72813-403-1 ISBN Additional Links UA library record; WoS full record; WoS citing articles
  Impact Factor Times cited Open Access
  Notes Approved no
  Call Number UA @ admin @ c:irua:169170 Serial 8288
Permanent link to this record
 
 
Author Wagaarachchige, J.; Idris, Z.; Kummamuru, N.B.; Sætre, K.A.; Halstensen, M.; Jens, K.-J.
  Title A new sulfolane based solvent for CO₂ capture Type P1 Proceeding
  Year 2021 Publication SSRN electronic journal Abbreviated Journal
  Volume Issue Pages
  Keywords (up) P1 Proceeding; Engineering sciences. Technology; Sustainable Energy, Air and Water Technology (DuEL)
  Abstract This study presents novel sulfolane based non-aqueous CO2 capture solvents, as an alternative solution for capturing CO2 from industrial processes. In order to select the most promising amine system, five different amines were tested by monitoring CO2 absorption and desorption processes using the time-base Attenuated Total Reflectance-Fourier Transform Infrared (ATR-FTIR) spectroscopy. During absorption experiments, we observed the formation of Monomethyl Carbonate (MMC) in diisopropylamine (DIPA) and 2-amino-2-methyl-1-propanol (AMP) systems, while carbamate was observed as the main product for the other three amine systems tested. In regeneration experiments, the MMC could be desorbed relatively easily from the amine solution at a mild temperature.
  Address
  Corporate Author Thesis
  Publisher Place of Publication Editor
  Language Wos Publication Date 2021-04-17
  Series Editor Series Title Abbreviated Series Title
  Series Volume Series Issue Edition
  ISSN ISBN Additional Links UA library record
  Impact Factor Times cited Open Access OpenAccess
  Notes Approved Most recent IF: NA
  Call Number UA @ admin @ c:irua:180364 Serial 8305
Permanent link to this record
 
 
Author Mescia, L.; Chiapperino, M.A.; Bia, P.; Lamacchia, C.M.; Gielis, J.; Caratelli, D.
  Title Relevance of the cell membrane modelling for accurate analysis of the pulsed electric field-induced electroporation Type P1 Proceeding
  Year 2019 Publication Progress in Electromagnetic Research Symposium (PIERS) T2 – 2019 PhotonIcs & Electromagnetics Research Symposium – Spring (PIERS-Spring), 17-20 June 2019, Rome, Italy Abbreviated Journal
  Volume Issue Pages 2985-2991
  Keywords (up) P1 Proceeding; Engineering sciences. Technology; Sustainable Energy, Air and Water Technology (DuEL)
  Abstract In this work, a nonlinear dispersive multiphysic model based on Maxwell and asymptotic Smoluchowsky equations has been developed to analyze the electroporation phenomenon induced by pulsed electric field on biological cells. The irregular plasma membrane geometry has been modeled by incorporating in the numerical algorithm the Gielis superformula as well as the dielectric dispersion of the plasma membrane has been modeled using the multi-relaxation Debye-based relationship. The study has been carried out with the aim to compare our model implementing a thin plasma membrane with the simplified model in which the plasma membrane is modeled as a distributed impedance boundary condition. The numerical analysis has been performed exposing the cell to external electric pulses having rectangular shapes. By an inspection of the obtained results, significant differences can be highlighted between the two models confirming the need to incorporate the effective thin membrane into the numerical algorithm to well predict the cell response to the pulsed electric fields in terms of transmembrane voltages and pore densities, especially when the cell is exposed to external nanosecond pulses.
  Address
  Corporate Author Thesis
  Publisher Place of Publication Editor
  Language Wos 000550769302158 Publication Date 2020-03-03
  Series Editor Series Title Abbreviated Series Title
  Series Volume Series Issue Edition
  ISSN 978-1-72813-404-8; 978-1-72813-403-1 ISBN Additional Links UA library record; WoS full record
  Impact Factor Times cited Open Access
  Notes Approved no
  Call Number UA @ admin @ c:irua:169171 Serial 8469
Permanent link to this record
 
 
Author De Cocker, P.; Bessiere, Y.; Hernandez-Raquet, G.; Dubos, S.; Mercade, M.; Sun, X.Y.; Mozo, I.; Barillon, B.; Gaval, G.; Caligaris, M.; Martin Ruel, S.; Vlaeminck, S.E.; Sperandio, M.
  Title Short and long term effect of decreasing temperature on anammox activity and enrichment in mainstream granular sludge process Type P1 Proceeding
  Year 2017 Publication Abbreviated Journal
  Volume 4 Issue Pages 50-54 T2 - Frontiers International Conference on W
  Keywords (up) P1 Proceeding; Engineering sciences. Technology; Sustainable Energy, Air and Water Technology (DuEL)
  Abstract This study investigates the impact of lower temperature on short term and long term (down to 10 degrees C) on a completely anoxic anammox granular sludge process. This is the first time granular sludge Anammox is operated in pure anoxic condition in SBR and at low temperature. Conversion performance, kinetic parameters, sludge characteristics and microbial community were analyzed.
  Address
  Corporate Author Thesis
  Publisher Place of Publication Editor
  Language Wos Publication Date 2017-05-04
  Series Editor Series Title Abbreviated Series Title
  Series Volume Series Issue Edition
  ISSN ISBN Additional Links UA library record
  Impact Factor Times cited Open Access
  Notes Approved no
  Call Number UA @ admin @ c:irua:151120 Serial 8519
Permanent link to this record
 
 
Author Bogaerts, A.; Snoeckx, R.; Berthelot, A.; Heijkers, S.; Wang, W.; Sun, S.; Van Laer, K.; Ramakers, M.; Michielsen, I.; Uytdenhouwen, Y.; Meynen, V.; Cool, P.
  Title Plasma based co2 conversion: a combined modeling and experimental study Type P1 Proceeding
  Year 2016 Publication Hakone Xv: International Symposium On High Pressure Low Temperature Plasma Chemistry: With Joint Cost Td1208 Workshop: Non-equilibrium Plasmas With Liquids For Water And Surface Treatment Abbreviated Journal
  Volume Issue Pages
  Keywords (up) P1 Proceeding; Laboratory of adsorption and catalysis (LADCA); Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
  Abstract In recent years there is increased interest in plasma-based CO2 conversion. Several plasma setups are being investigated for this purpose, but the most commonly used ones are a dielectric barrier discharge (DBD), a microwave (MW) plasma and a gliding arc (GA) reactor. In this proceedings paper, we will show results from our experiments in a (packed bed) DBD reactor and in a vortex-flow GA reactor, as well as from our model calculations for the detailed plasma chemistry in a DBD, MW and GA, for pure CO2 as well as mixtures of CO2 with N-2, CH4 and H2O.
  Address
  Corporate Author Thesis
  Publisher Masarykova univ Place of Publication Brno Editor
  Language Wos Publication Date 0000-00-00
  Series Editor Series Title Abbreviated Series Title
  Series Volume Series Issue Edition
  ISSN 978-80-210-8318-9 ISBN Additional Links UA library record; WoS full record
  Impact Factor Times cited Open Access
  Notes Approved Most recent IF: NA
  Call Number UA @ lucian @ c:irua:141553 Serial 4526
Permanent link to this record
 
 
Author Milovanović, S.P.; Peeters, F.M.
  Title Strained graphene structures : from valleytronics to pressure sensing Type P1 Proceeding
  Year 2018 Publication Nanostructured Materials For The Detection Of Cbrn Abbreviated Journal
  Volume Issue Pages 3-17 T2 - NATO Advanced Research Workshop on Nanos
  Keywords (up) P1 Proceeding; Pharmacology. Therapy; Engineering sciences. Technology; Condensed Matter Theory (CMT)
  Abstract Due to its strong bonds graphene can stretch up to 25% of its original size without breaking. Furthermore, mechanical deformations lead to the generation of pseudo-magnetic fields (PMF) that can exceed 300 T. The generated PMF has opposite direction for electrons originating from different valleys. We show that valley-polarized currents can be generated by local straining of multi-terminal graphene devices. The pseudo-magnetic field created by a Gaussian-like deformation allows electrons from only one valley to transmit and a current of electrons from a single valley is generated at the opposite side of the locally strained region. Furthermore, applying a pressure difference between the two sides of a graphene membrane causes it to bend/bulge resulting in a resistance change. We find that the resistance changes linearly with pressure for bubbles of small radius while the response becomes non-linear for bubbles that stretch almost to the edges of the sample. This is explained as due to the strong interference of propagating electronic modes inside the bubble. Our calculations show that high gauge factors can be obtained in this way which makes graphene a good candidate for pressure sensing.
  Address
  Corporate Author Thesis
  Publisher Place of Publication Editor
  Language Wos 000477758900001 Publication Date 2018-07-11
  Series Editor Series Title Abbreviated Series Title
  Series Volume Series Issue Edition
  ISSN 978-94-024-1306-9; 978-94-024-1304-5; 978-94-024-1303-8; 978-94-024-1303-8 ISBN Additional Links UA library record; WoS full record; WoS citing articles
  Impact Factor Times cited 6 Open Access
  Notes Approved no
  Call Number UA @ admin @ c:irua:161972 Serial 8583
Permanent link to this record
 
 
Author van Cleempoel, A.; Gijbels, R.; van den Heuvel, H.; Claeys, M.
  Title Analysis of C60 and C70 oxides by HPLC and low- and high-energy collision-induced dissocation tandem mass spectrometry Type P1 Proceeding
  Year 1997 Publication Proceedings Symposium on Recent Advances in the Chemistry and Physics of Fullerenes and Related Materials, 191th Meeting of the Electrochemical Society, Montreal, Canada, 4-9 May 1997 Abbreviated Journal
  Volume 4 Issue Pages 783-800
  Keywords (up) P1 Proceeding; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
  Abstract
  Address
  Corporate Author Thesis
  Publisher Place of Publication Editor
  Language Wos A1997BJ44R00081 Publication Date 0000-00-00
  Series Editor Series Title Abbreviated Series Title
  Series Volume Series Issue Edition
  ISSN ISBN Additional Links UA library record; WoS full record; WoS citing articles
  Impact Factor Times cited 1 Open Access
  Notes Approved Most recent IF: NA
  Call Number UA @ lucian @ c:irua:19150 Serial 99
Permanent link to this record
 
 
Author De Bie, C.; Martens, T.; van Dijk, J.; van der Mullen, J.J.A.M.; Bogaerts, A.
  Title Description of the plasma chemistry in an atmospheric pressure CH4 dielectric barrier discharge using a two dimensional fluid model Type P1 Proceeding
  Year 2009 Publication Abbreviated Journal
  Volume Issue Pages 13-16
  Keywords (up) P1 Proceeding; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
  Abstract
  Address
  Corporate Author Thesis
  Publisher Place of Publication S.l. Editor
  Language Wos Publication Date 0000-00-00
  Series Editor Series Title Abbreviated Series Title
  Series Volume Series Issue Edition
  ISSN ISBN Additional Links UA library record; WoS full record; WoS citing articles
  Impact Factor Times cited Open Access
  Notes Approved Most recent IF: NA
  Call Number UA @ lucian @ c:irua:85692 Serial 654
Permanent link to this record
 
 
Author Martens, T.; Brok, W.J.M.; van Dijk, J.; Bogaerts, A.
  Title Improving dielectric barrier discharge efficiency by optimizing voltage profiles Type P1 Proceeding
  Year 2009 Publication Abbreviated Journal
  Volume Issue Pages 95-98
  Keywords (up) P1 Proceeding; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
  Abstract
  Address
  Corporate Author Thesis
  Publisher Place of Publication S.l. Editor
  Language Wos Publication Date 0000-00-00
  Series Editor Series Title Abbreviated Series Title
  Series Volume Series Issue Edition
  ISSN ISBN Additional Links UA library record; WoS full record;
  Impact Factor Times cited Open Access
  Notes Approved Most recent IF: NA
  Call Number UA @ lucian @ c:irua:85693 Serial 1570
Permanent link to this record
 
 
Author Petrovic, D.; Martens, T.; van Dijk, J.; Brok, W.J.M.; Bogaerts, A.
  Title Modeling of a dielectric barrier discharge used as a flowing chemical reactor Type P1 Proceeding
  Year 2008 Publication Abbreviated Journal
  Volume Issue Pages 262-262
  Keywords (up) P1 Proceeding; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
  Abstract
  Address
  Corporate Author Thesis
  Publisher Astronomical Observatory Place of Publication Belgrade Editor
  Language Wos Publication Date 0000-00-00
  Series Editor Series Title Abbreviated Series Title
  Series Volume 2008 Series Issue 84 Edition
  ISSN 978-86-80019-27-7; 0373-3742 ISBN Additional Links UA library record; WoS full record;
  Impact Factor Times cited Open Access
  Notes Approved Most recent IF: NA
  Call Number UA @ lucian @ c:irua:95700 Serial 2114
Permanent link to this record
 
 
Author Madani, M.; Bogaerts, A.; Vangeneugden, D.
  Title Numerical modelling for a dielectric barrier discharge at atmospheric pressure in nitrogen Type P1 Proceeding
  Year 2005 Publication Abbreviated Journal
  Volume Issue Pages 53-56
  Keywords (up) P1 Proceeding; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
  Abstract In this paper we used a one dimensional fluid model, for the simulations of a Dielectric Barrier Discharge at atmospheric pressure. From the current and voltage profiles and the density profiles, we notice that two different regimes can be obtained in a uniform DBD. Furthermore a two dimensional flud model was developed and we describe how the gasflow can be included in such a model.
  Address
  Corporate Author Thesis
  Publisher Place of Publication S.l. Editor
  Language Wos Publication Date 0000-00-00
  Series Editor Series Title Abbreviated Series Title
  Series Volume Series Issue Edition
  ISSN 978-90-808669-2-8 ISBN Additional Links UA library record; WoS full record;
  Impact Factor Times cited Open Access
  Notes Approved Most recent IF: NA
  Call Number UA @ lucian @ c:irua:88728 Serial 2399
Permanent link to this record
 
 
Author Petrovic, D.; Martens, T.; De Bie, C.; van Dijk, J.; Brok, W.J.M.; Bogaerts, A.
  Title Numerical study on energy efficiency of a cylindrical dielectric barrier discharge plasma-chemical reactor Type P1 Proceeding
  Year 2009 Publication Abbreviated Journal
  Volume Issue Pages 109
  Keywords (up) P1 Proceeding; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
  Abstract
  Address
  Corporate Author Thesis
  Publisher Place of Publication S.l. Editor
  Language Wos Publication Date 0000-00-00
  Series Editor Series Title Abbreviated Series Title
  Series Volume Series Issue Edition
  ISSN ISBN Additional Links UA library record; WoS full record;
  Impact Factor Times cited Open Access
  Notes Approved Most recent IF: NA
  Call Number UA @ lucian @ c:irua:85694 Serial 2412
Permanent link to this record
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