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“Thermal stability of atomic layer deposited Zr:Al mixed oxide thin films: an in situ transmission electron microscopy study”. Nistor LC, Richard O, Zhao C, Bender H, Van Tendeloo G, Journal of materials research 20, 1741 (2005). http://doi.org/10.1557/JMR.2005.0217
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.673
DOI: 10.1557/JMR.2005.0217
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“Three-dimensional analysis of carbon nanotube networks in interconnects by electron tomography without missing wedge artifacts”. Ke X, Bals S, Cott D, Hantschel T, Bender H, Van Tendeloo G, Microscopy and microanalysis 16, 210 (2010). http://doi.org/10.1017/S1431927609991371
Abstract: The three-dimensional (3D) distribution of carbon nanotubes (CNTs) grown inside semiconductor contact holes is studied by electron tomography. The use of a specialized tomography holder results in an angular tilt range of ±90°, which means that the so-called missing wedge is absent. The transmission electron microscopy (TEM) sample for this purpose consists of a micropillar that is prepared by a dedicated procedure using the focused ion beam (FIB) but keeping the CNTs intact. The 3D results are combined with energy dispersive X-ray spectroscopy (EDS) to study the relation between the CNTs and the catalyst particles used during their growth. The reconstruction, based on the full range of tilt angles, is compared with a reconstruction where a missing wedge is present. This clearly illustates that the missing wedge will lead to an unreliable interpretation and will limit quantitative studies
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.891
Times cited: 42
DOI: 10.1017/S1431927609991371
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“HAADF-STEM block-scanning strategy for local measurement of strain at the nanoscale”. Prabhakara V, Jannis D, Guzzinati G, Béché, A, Bender H, Verbeeck J, Ultramicroscopy 219, 113099 (2020). http://doi.org/10.1016/j.ultramic.2020.113099
Abstract: Lattice strain measurement of nanoscale semiconductor devices is crucial for the semiconductor industry as strain substantially improves the electrical performance of transistors. High resolution scanning transmission electron microscopy (HR-STEM) imaging is an excellent tool that provides spatial resolution at the atomic scale and strain information by applying Geometric Phase Analysis or image fitting procedures. However, HR-STEM images regularly suffer from scanning distortions and sample drift during image acquisition. In this paper, we propose a new scanning strategy that drastically reduces artefacts due to drift and scanning distortion, along with extending the field of view. It consists of the acquisition of a series of independent small subimages containing an atomic resolution image of the local lattice. All subimages are then analysed individually for strain by fitting a nonlinear model to the lattice images. The method allows flexible tuning of spatial resolution and the field of view within the limits of the dynamic range of the scan engine while maintaining atomic resolution sampling within the subimages. The obtained experimental strain maps are quantitatively benchmarked against the Bessel diffraction technique. We demonstrate that the proposed scanning strategy approaches the performance of the diffraction technique while having the advantage that it does not require specialized diffraction cameras.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.2
Times cited: 4
DOI: 10.1016/j.ultramic.2020.113099
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“Linearized radially polarized light for improved precision in strain measurements using micro-Raman spectroscopy”. Prabhakara V, Nuytten T, Bender H, Vandervorst W, Bals S, Verbeeck J, Optics Express 29, 34531 (2021). http://doi.org/10.1364/OE.434726
Abstract: Strain engineering in semiconductor transistor devices has become vital in the semiconductor industry due to the ever-increasing need for performance enhancement at the nanoscale. Raman spectroscopy is a non-invasive measurement technique with high sensitivity to mechanical stress that does not require any special sample preparation procedures in comparison to characterization involving transmission electron microscopy (TEM), making it suitable for inline strain measurement in the semiconductor industry. Indeed, at present, strain measurements using Raman spectroscopy are already routinely carried out in semiconductor devices as it is cost effective, fast and non-destructive. In this paper we explore the usage of linearized radially polarized light as an excitation source, which does provide significantly enhanced accuracy and precision as compared to linearly polarized light for this application. Numerical simulations are done to quantitatively evaluate the electric field intensities that contribute to this enhanced sensitivity. We benchmark the experimental results against TEM diffraction-based techniques like nano-beam diffraction and Bessel diffraction. Differences between both approaches are assigned to strain relaxation due to sample thinning required in TEM setups, demonstrating the benefit of Raman for nondestructive inline testing.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.307
Times cited: 2
DOI: 10.1364/OE.434726
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