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Author Biró, L.P.; Khanh, N.Q.; Vértesy, Z.; Horváth, Z.E.; Osváth, Z.; Koós, A.; Gyulai, J.; Kocsonya, A.; Kónya, Z.; Zhang, X.B.; Van Tendeloo, G.; Fonseca, A.; Nagy, J.B.;
Title Catalyst traces and other impurities in chemically purified carbon nanotubes grown by CVD Type A1 Journal article
Year 2002 Publication Materials science and engineering: part C: biomimetic materials T2 – EMRS Spring Meeting, JUN 05-08, 2001, STRASBOURG, FRANCE Abbreviated Journal Mat Sci Eng C-Mater
Volume 19 Issue 1-2 Pages 9-13
Keywords (up) A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract Multiwall carbon nanotubes grown by the catalytic decomposition of acetylene over supported Co catalyst were subjected to wet and dry oxidation in order to remove the unwanted products and the catalyst traces. The effects of the purification treatment on the Co content was monitored by physical methods: Rutherford Backscattering Spectrometry (RBS). Particle Induced X-Ray Emission (PIXE) and X-Ray Fluorescence (XRF). The purified products were investigated by microscopic methods: TEM. Scanning Electron Microscopy (SEM), Energy Dispersive Spectroscopy (EDS) and STM. The KMnO4/H2SO4 aqueous oxidation procedure was found to be effective in reducing the Co content while damaging only moderately the outer wall of the nanotubes. Treatment in HNO3/H2SO4 yields a bucky-paper like product and produces the increase of the Si and S content of the sample. (C) 2002 Elsevier Science B.V. All rights reserved.
Address
Corporate Author Thesis
Publisher Place of Publication Lausanne Editor
Language Wos 000173080700003 Publication Date 2002-07-25
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0928-4931; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 4.164 Times cited 36 Open Access
Notes Approved Most recent IF: 4.164; 2002 IF: 0.734
Call Number UA @ lucian @ c:irua:102835 Serial 289
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Author Yan, L.; Niu, H.J.; Duong, G.V.; Suchomel, M.R.; Bacsa, J.; Chalker, P.R.; Hadermann, J.; Van Tendeloo, G.; Rosseinsky, M.J.
Title Cation ordering within the perovskite block of a six-layer Ruddlesden-Popper oxide from layer-by-layer growth artificial interfaces in complex unit cells Type A1 Journal article
Year 2011 Publication Chemical science Abbreviated Journal Chem Sci
Volume 2 Issue 2 Pages 261-272
Keywords (up) A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract The (AO)(ABO3)n Ruddlesden-Popper structure is an archetypal complex oxide consisting of two distinct structural units, an (AO) rock salt layer separating an n-octahedra thick perovskite block. Conventional high-temperature oxide synthesis methods cannot access members with n > 3, but low-temperature layer-by-layer thin film methods allow the preparation of materials with thicker perovskite blocks, exploiting high surface mobility and lattice matching with the substrate. This paper describes the growth of an n = 6 member CaO[(CSMO)2(LCMO)2 (CSMO)2] in which the six unit cell perovskite block is sub-divided into two central La0.67Ca0.33MnO3 (LCMO) and two terminal Ca0.85Sm0.15MnO3 (CSMO) layers to allow stabilization of the rock salt layer and variation of the transition metal charge.
Address
Corporate Author Thesis
Publisher Royal Society of Chemistry Place of Publication Cambridge Editor
Language Wos 000286327600010 Publication Date 2010-11-06
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 2041-6520;2041-6539; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 8.668 Times cited 16 Open Access
Notes Approved Most recent IF: 8.668; 2011 IF: 7.525
Call Number UA @ lucian @ c:irua:88652 Serial 300
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Author Aichele, T.; Robin, I.-C.; Bougerol, C.; André, R.; Tatarenko, S.; Van Tendeloo, G.
Title CdSe quantum dot formation induced by amorphous Se Type A1 Journal article
Year 2007 Publication Surface science : a journal devoted to the physics and chemistry of interfaces T2 – International Conference on NANO-Structures Self Assembling, JUL 02-06, 2006, Aix en Provence, FRANCE Abbreviated Journal Surf Sci
Volume 601 Issue 13 Pages 2664-2666
Keywords (up) A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract The mechanism allowing the transition from a two-dimensional strained layer of CdSe on ZnSe to self-assembled islands induced by the use of amorphous selenium is still not fully understood. For a better understanding, atomic force microscopy and transmission electron microscopy studies were performed on CdSe films with a thickness close to that for quantum dot formation. Below this thickness, the sample surface results in undulations along the [110] crystal direction, while few quantum dots are situated in the wave valleys. Plan view transmission electron microscopy studies reveal a strong anisotropy of the islands and show that the Se desorption conditions are crucial. (C) 2006 Elsevier B.V. All rights reserved.
Address
Corporate Author Thesis
Publisher Place of Publication Amsterdam Editor
Language Wos 000248030100027 Publication Date 2006-12-22
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0039-6028; ISBN Additional Links UA library record; WoS full record
Impact Factor 2.062 Times cited Open Access
Notes Approved Most recent IF: 2.062; 2007 IF: 1.855
Call Number UA @ lucian @ c:irua:102668 Serial 304
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Author Van Tendeloo, L.; Wangermez, W.; Kurttepeli, M.; de Blochouse, B.; Bals, S.; Van Tendeloo, G.; Martens, J.A.; Maes, A.; Kirschhock, C.E.A.; Breynaert, E.
Title Chabazite : stable cation-exchanger in hyper alkaline concrete pore water Type A1 Journal article
Year 2015 Publication Environmental science and technology Abbreviated Journal Environ Sci Technol
Volume 49 Issue 49 Pages 2358-2365
Keywords (up) A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract To avoid impact on the environment, facilities for permanent disposal of hazardous waste adopt multibarrier design schemes. As the primary barrier very often consists of cement-based materials, two distinct aspects are essential for the selection of suitable complementary barriers: (1) selective sorption of the contaminants in the repository and (2) long-term chemical stability in hyperalkaline concrete-derived media. A multidisciplinary approach combining experimental strategies from environmental chemistry and materials science is therefore essential to provide a reliable assessment of potential candidate materials. Chabazite is typically synthesized in 1 M KOH solutions but also crystallizes in simulated young cement pore water, a pH 13 aqueous solution mainly containing K+ and Na+ cations. Its formation and stability in this medium was evaluated as a function of temperature (60 and 85 °C) over a timeframe of more than 2 years and was also asessed from a mechanistic point of view. Chabazite demonstrates excellent cation-exchange properties in simulated young cement pore water. Comparison of its Cs+ cation exchange properties at pH 8 and pH 13 unexpectedly demonstrated an increase of the KD with increasing pH. The combined results identify chabazite as a valid candidate for inclusion in engineered barriers for concrete-based waste disposal.
Address
Corporate Author Thesis
Publisher Place of Publication Easton, Pa Editor
Language Wos 000349806400047 Publication Date 2015-01-08
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0013-936X;1520-5851; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 6.198 Times cited 13 Open Access OpenAccess
Notes This work was supported by long-term structural funding by the Flemish Government (Methusalem) and by ONDRAF/ NIRAS, the Belgian Agency for Radioactive Waste and Fissile Materials, as part of the program on surface disposal of Belgian Category A waste. The Belgian government is acknowledged for financing the interuniversity poles of attraction (IAP-PAI). G.V.T. and S.B. acknowledge financial support from European Research Council (ERC Advanced Grant no. 24691-COUNTATOMS, ERC Starting Grant no. 335078-COLOURATOMS).; ECAS_Sara; (ROMEO:white; preprint:; postprint:restricted 12 months embargo; pdfversion:cannot); Approved Most recent IF: 6.198; 2015 IF: 5.330
Call Number c:irua:127695 Serial 307
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Author Obradors, X.; Puig, T.; Pomar, A.; Sandiumenge, F.; Piñol, S.; Mestres, N.; Castaño, O.; Coll, M.; Cavallaro, A.; Palau, A.; Gázquez, J.; González, J.C.; Gutiérrez, J.; Romá, N.; Ricart, S.; Moretó, J.M.; Rossell, M.D.; Van Tendeloo, G.
Title Chemical solution deposition: a path towards low cost coated conductors Type A1 Journal article
Year 2004 Publication Superconductor science and technology Abbreviated Journal Supercond Sci Tech
Volume 17 Issue 8 Pages 1055-1064
Keywords (up) A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Bristol Editor
Language Wos 000223574000022 Publication Date 2004-06-19
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0953-2048;1361-6668; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 2.878 Times cited 107 Open Access
Notes Approved Most recent IF: 2.878; 2004 IF: 1.556
Call Number UA @ lucian @ c:irua:54870 Serial 350
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Author Buschmann, V.; Schryvers, D.; van Landuyt, J.; van Roost, C.; de Keyzer, R.
Title A comparative investigation of replication techniques used for the study of (S+Au) sensitized AgBr microcrystals Type A1 Journal article
Year 1996 Publication The journal of imaging science and technology Abbreviated Journal J Imaging Sci Techn
Volume 40 Issue Pages 189-201
Keywords (up) A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Springfield, Va Editor
Language Wos A1996VL09200003 Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1062-3701 ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 0.349 Times cited 4 Open Access
Notes Approved MATERIALS SCIENCE, MULTIDISCIPLINARY 135/271 Q2 # PHYSICS, APPLIED 70/145 Q2 # PHYSICS, CONDENSED MATTER 40/67 Q3 #
Call Number UA @ lucian @ c:irua:15428 Serial 418
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Author Lubyshev, D.; Fastenau, J.M.; Fang, X.-M.; Wu, Y.; Doss, C.; Snyder, A.; Liu, W.K.; Lamb, M.S.M.; Bals, S.; Song, C.
Title Comparison of As- and P-based metamorphic buffers for high performance InP heterojunction bipolar transistor and high electron mobility transistor applications Type A1 Journal article
Year 2004 Publication Journal of vacuum science & technology. B. Microelectronics and nanometer structures. Processing, measurement and phenomena Abbreviated Journal
Volume 22 Issue 3 Pages 1565-1569
Keywords (up) A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract Metamorphic buffers (M-buffers) consisting of graded InAlAs or bulk InP were employed for the production of InP-based epiwafers on GaAs substrates by molecular-beam epitaxy. The graded InAlAs is the standard for production metamorphic high electron mobility transistors (M-HEMTs), while the bulk InP offers superior thermal properties for higher current density circuits. The surface morphology and crystal structure of the two M-buffers showed different relaxation mechanisms. The graded InAlAs gave a cross-hatched pattern with nearly full relaxation and very effective dislocation filtering, while the bulk InP had a uniform isotropic surface with dislocations propagating further up towards the active layers. Both types of M-buffers had atomic force microscopy root-mean-square roughness values around 2030 Å. The Hall transport properties of high electron mobility transistors (HEMTs) grown on the InAlAs M-buffer, and a baseline HEMT grown lattice matched on InP, both had room-temperature mobilities >10 000 cm2/V s, while the M-HEMT on the InP M-buffer showed a decrease to 9000 cm2/V  s. Similarly, the dc parameters of a double heterojunction bipolar transistor (DHBT) grown on the InAlAs M-buffer were much closer to the baseline heterojunction bipolar transistor than a DHBT grown on the InP M-buffer. A high breakdown voltage of 11.3 V was achieved on an M-DHBT with the InAlAs M-buffer. We speculate that the degradation in device characteristics on the InP M-buffer was related to the incomplete dislocation filtering.
Address
Corporate Author Thesis
Publisher Place of Publication Woodbury, N.Y. Editor
Language Wos 000222481400141 Publication Date 2004-07-08
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0734-211X; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor Times cited 25 Open Access
Notes Approved Most recent IF: NA
Call Number UA @ lucian @ c:irua:87596 Serial 427
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Author Tuck, L.; Sayer, M.; Mackenzie, M.; Hadermann, J.; Dunfield, D.; Pietak, A.; Reid, J.W.; Stratilatov, A.D.
Title Composition and crystal structure of resorbable calcium phosphate thin films Type A1 Journal article
Year 2006 Publication Journal of materials science Abbreviated Journal J Mater Sci
Volume 41 Issue 13 Pages 4273-4284
Keywords (up) A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication London Editor
Language Wos 000239282300041 Publication Date 2006-05-16
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0022-2461;1573-4803; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 2.599 Times cited 2 Open Access
Notes Approved Most recent IF: 2.599; 2006 IF: 0.999
Call Number UA @ lucian @ c:irua:60128 Serial 442
Permanent link to this record
 

 
Author Verleysen, E.; Bender, H.; Richard, O.; Schryvers, D.; Vandervorst, W.
Title Compositional characterization of nickel silicides by HAADF-STEM imaging Type A1 Journal article
Year 2011 Publication Journal of materials science Abbreviated Journal J Mater Sci
Volume 46 Issue 7 Pages 2001-2008
Keywords (up) A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract A methodology for the quantitative compositional characterization of nickel silicides by high angle annular dark field scanning transmission electron microscopy (HAADF-STEM) imaging is presented. HAADF-STEM images of a set of nickel silicide reference samples Ni3Si, Ni31Si12, Ni2Si, NiSi and NiSi2 are taken at identical experimental conditions. The correlation between sample thickness and HAADF-STEM intensity is discussed. In order to quantify the relationship between the experimental Z-contrast intensities and the composition of the analysed layers, the ratio of the HAADF-STEM intensity to the sample thickness or to the intensity of the silicon substrate is determined for each nickel silicide reference sample. Diffraction contrast is still detected on the HAADF-STEM images, even though the detector is set at the largest possible detection angle. The influence on the quantification results of intensity fluctuations caused by diffraction contrast and channelling is examined. The methodology is applied to FUSI gate devices and to horizontal TFET devices with different nickel silicides formed on source, gate and drain. It is shown that, if the elements which are present are known, this methodology allows a fast quantitative 2-dimensional compositional analysis.
Address
Corporate Author Thesis
Publisher Place of Publication London Editor
Language Wos 000286633000002 Publication Date 2011-01-06
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0022-2461;1573-4803; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 2.599 Times cited 1 Open Access
Notes Approved Most recent IF: 2.599; 2011 IF: 2.015
Call Number UA @ lucian @ c:irua:88950 Serial 446
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Author Abakumov, A.M.; Kalyuzhnaya, A.S.; Rozova, M.G.; Antipov, E.V.; Hadermann, J.; Van Tendeloo, G.
Title Compositionally induced phase transition in the Ca2MnGa1-xAlxO5 solid solutions: ordering of tetrahedral chains in brownmillerite structure Type A1 Journal article
Year 2005 Publication Solid state sciences Abbreviated Journal Solid State Sci
Volume 7 Issue 7 Pages 801-811
Keywords (up) A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Amsterdam Editor
Language Wos 000230259500001 Publication Date 2005-04-30
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1293-2558; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.811 Times cited 38 Open Access
Notes IAP V-1; RFBR 04-03-32785-a. Approved Most recent IF: 1.811; 2005 IF: 1.708
Call Number UA @ lucian @ c:irua:54700 Serial 448
Permanent link to this record
 

 
Author Evans, T.; Kiflawi, I.; Luyten, W.; Van Tendeloo, G.; Woods, G.S.
Title Conversion of platelets into dislocation loops and voidite formation in type IaB diamonds Type A1 Journal article
Year 1995 Publication Proceedings of the Royal Society of London: series A: mathematical and physical sciences Abbreviated Journal P Roy Soc A-Math Phy
Volume 449 Issue Pages 295-313
Keywords (up) A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication London Editor
Language Wos A1995QY10100007 Publication Date 2006-12-18
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1364-5021;1471-2946; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 2.192 Times cited 32 Open Access
Notes Approved COMPUTER SCIENCE, INTERDISCIPLINARY 11/104 Q1 # PHYSICS, MATHEMATICAL 1/53 Q1 #
Call Number UA @ lucian @ c:irua:13314 Serial 513
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Author Jacques, P.; Verbist, K.; Lapin, J.; Ryelandt, L.; Van Tendeloo, G.; Delannay, F.
Title Critical assessment of the process of growth of a YBa2Cu3O7-\delta layer on Y2BaCuO5 Type A1 Journal article
Year 1996 Publication Superconductor science and technology Abbreviated Journal Supercond Sci Tech
Volume 9 Issue Pages 176-183
Keywords (up) A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Bristol Editor
Language Wos A1996TZ48100008 Publication Date 2002-08-25
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0953-2048;1361-6668; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 2.325 Times cited 1 Open Access
Notes Approved no
Call Number UA @ lucian @ c:irua:15462 Serial 539
Permanent link to this record
 

 
Author Potapov, P.L.; Tirry, W.; Schryvers, D.; Sivel, V.G.M.; Wu, M.-Y.; Aslanidis, D.; Zandbergen, H.
Title Cross-section transmission electron microscopy characterization of the near-surface structure of medical Nitinol superelastic tubing Type A1 Journal article
Year 2007 Publication Journal of materials science: materials in medicine Abbreviated Journal J Mater Sci-Mater M
Volume 18 Issue 3 Pages 483-492
Keywords (up) A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication London Editor
Language Wos 000244689700009 Publication Date 2007-02-27
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0957-4530;1573-4838; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 2.325 Times cited 14 Open Access
Notes Gao; Fwo Approved Most recent IF: 2.325; 2007 IF: 1.581
Call Number UA @ lucian @ c:irua:63484 Serial 547
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Author Mihailescu, I.N.; Gyorgy, E.; Marin, G.; Popescu, M.; Teodorescu, V.S.; van Landuyt, J.; Grivas, C.; Hatziapostolou, A.
Title Crystalline structure of very hard tungsten carbide thin films obtained by reactive pulsed laser deposition Type A1 Journal article
Year 1999 Publication Journal of vacuum science and technology: A: vacuum surfaces and films Abbreviated Journal J Vac Sci Technol A
Volume 17 Issue 1 Pages 249-255
Keywords (up) A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication New York, N.Y. Editor
Language Wos 000078136300038 Publication Date 2002-07-27
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0734-2101; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.374 Times cited 8 Open Access
Notes Approved Most recent IF: 1.374; 1999 IF: 1.742
Call Number UA @ lucian @ c:irua:29689 Serial 581
Permanent link to this record
 

 
Author van Landuyt, J.; Van Tendeloo, G.; Amelinckx, S.; Zhang, X.F.; Zhang, X.B.; Luyten, W.
Title Crystallography of fullerites and related graphene textures Type A1 Journal article
Year 1994 Publication Materials science forum Abbreviated Journal
Volume 150/151 Issue Pages 53-64
Keywords (up) A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Lausanne Editor
Language Wos A1994BC12F00004 Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0255-5476; 1662-9752 ISBN Additional Links UA library record; WoS full record;
Impact Factor Times cited Open Access
Notes Approved no
Call Number UA @ lucian @ c:irua:10001 Serial 590
Permanent link to this record
 

 
Author Deveirman, A.; van Landuyt, J.; Vanhellemont, J.; Maes, H.E.; Yallup, K.
Title Defects in high-dose oxygen implanted silicon : a TEM study Type A1 Journal article
Year 1991 Publication Vacuum: the international journal and abstracting service for vacuum science and technology T2 – 1ST SIOMX WORKSHOP ( SEPARATION BY IMPLANTATION OF OXYGEN ) ( SWI-88 ), NOV 07-08, 1988, UNIV SURREY, GUILDFORD, ENGLAND Abbreviated Journal Vacuum
Volume 42 Issue 5-6 Pages 367-369
Keywords (up) A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract Results are discussed of a transmission electron microscopy study of high-dose oxygen implanted silicon. In addition to the general high temperature (> 1200-degrees-C) annealing treatments also annealings at 'low' temperatures (1000-1100-degrees-C) were performed in order to slow down the precipitate and defect reactions. The observed dissolution of the oxide precipitates during prolonged high temperature annealing is explained by critical radius considerations. Threading dislocations are the remaining lattice defects in the silicon overlayer and cannot be removed by further annealing. Low temperature annealing results in the formation and subsequent unfaulting of extrinsic stacking fault loops below the buried oxide layer.
Address
Corporate Author Thesis
Publisher Place of Publication Oxford Editor
Language Wos A1991EV61700007 Publication Date 2002-10-19
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0042-207X; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.858 Times cited 4 Open Access
Notes Approved MATERIALS SCIENCE, MULTIDISCIPLINARY 96/271 Q2 #
Call Number UA @ lucian @ c:irua:104022 Serial 629
Permanent link to this record
 

 
Author Nistor, L.C.; van Landuyt, J.; Ralchenko, V.G.; Kononenko, T.V.; Obraztsova, E.D.; Strelnitsky, V.E.
Title Direct observation of laser-induced crystallization of a-C : H films Type A1 Journal article
Year 1994 Publication Applied physics A : materials science & processing Abbreviated Journal
Volume 58 Issue 2 Pages 137-144
Keywords (up) A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract The post-growth modification of diamond-like amorphous hydrogenated carbon a-C:H films by laser treatment has been studied by transmission electron microscopy and Raman spectroscopy. a-C:H films grown on Si substrates by benzene decomposition in a rf glow discharge were irradiated with 15 ns pulses of a KrF-excimer laser with fluences in the ran e of E = 50-700 mJ/cm(2). At fluences below 100 mJ/cm(2) an increase in the number of graphitic clusters and in their ordering was evidenced from Raman spectra, while the film structure remained amorphous according to electron microscopy and electron diffraction observations. At higher fluences the appearance of diamond particles of 2-7 nm size, embedded into the lower crystallized graphitic matrix, was observed and simultaneously a progressive growth of graphite nanocrystals with dimensions from 2 nm to 4 nm was deduced from Raman measurements. The maximum thickness of the crystallized surface layer (approximate to 400 nm) and the degree of laser annealing are limited by the film ablation which starts at E > 250 mJ/cm(2). The laser-treated areas lose their chemical inertness. In particular, chemical etching in chromium acid becomes possible, which may be used for patterning the highly inert carbon films.
Address
Corporate Author Thesis
Publisher Place of Publication Heidelberg Editor
Language Wos A1994MU87700005 Publication Date 2004-10-24
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0721-7250;1432-0630; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor Times cited 73 Open Access
Notes Approved no
Call Number UA @ lucian @ c:irua:99924 Serial 718
Permanent link to this record
 

 
Author Kalitzova, M.; Lebedev, O.I.; Zollo, G.; Gesheva, K.; Vlakhov, E.; Marinov, Y.; Ivanova, T.;
Title Dynamics of nanoclustering in Te+ implanted Si after application of high frequency electromagnetic field and thermal annealing Type A1 Journal article
Year 2008 Publication Applied physics A : materials science & processing Abbreviated Journal Appl Phys A-Mater
Volume 91 Issue 3 Pages 515-519
Keywords (up) A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Heidelberg Editor
Language Wos 000255089300027 Publication Date 2008-03-13
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0947-8396;1432-0630; ISBN Additional Links UA library record; WoS full record
Impact Factor 1.455 Times cited Open Access
Notes Iuap Vi Approved Most recent IF: 1.455; 2008 IF: 1.884
Call Number UA @ lucian @ c:irua:69129 Serial 780
Permanent link to this record
 

 
Author Srivastava, A.K.; Yang, Z.; Schryvers, D.; van Hurnbeeck, J.
Title Effect of annealing on cold-rolled Ni-Ti alloys Type A1 Journal article
Year 2008 Publication Materials science and engineering: part A: structural materials: properties, microstructure and processing Abbreviated Journal Mat Sci Eng A-Struct
Volume 481 Issue Si Pages 594-597
Keywords (up) A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos 000255716100123 Publication Date 2007-06-07
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0921-5093; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 3.094 Times cited 8 Open Access
Notes Fwo; G0465.05 Approved Most recent IF: 3.094; 2008 IF: 1.806
Call Number UA @ lucian @ c:irua:69141 Serial 797
Permanent link to this record
 

 
Author Wang, X.; Amin-Ahmadi, B.; Schryvers, D.; Verlinden, B.; Van Humbeeck, J.
Title Effect of annealing on the transformation behavior and mechanical properties of two nanostructured Ti-50.8at.%Ni thin wires produced by different methods Type A1 Journal article
Year 2013 Publication Materials science forum Abbreviated Journal
Volume 738/739 Issue Pages 306-310
Keywords (up) A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract A Ti-50.8at.%Ni wire produced using a co-drawing method and a commercial Ti-50.8at.%Ni wire were annealed at different temperatures between 450°C and 700°C. Grains with diameter less than 100nm were revealed by transmission electron microscopy for both wires before annealing treatment. However, the microstructural heterogeneity of the co-drawn wire is more obvious than that of the commercial wire. Multi-stage martensitic transformation was observed in the co-drawn wire, compared with the one-stage A↔M transformation in the commercial wire after annealing at 600°C for 30min. The differences of total elongation, plateau strain and pseudoelastic recoverable strain between the commercial wire and the co-drawn wire were also observed. The differences of the transformation behavior and mechanical properties between the commercial wire and the co-drawn wire are attributed to the microstructural difference between these two wires.
Address
Corporate Author Thesis
Publisher Place of Publication Lausanne Editor
Language Wos 000316089000055 Publication Date 2013-03-11
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1662-9752; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor Times cited 5 Open Access
Notes Approved Most recent IF: NA
Call Number UA @ lucian @ c:irua:104691 Serial 798
Permanent link to this record
 

 
Author Amin-Ahmadi, B.; Idrissi, H.; Galceran, M.; Colla, M.S.; Raskin, J.P.; Pardoen, T.; Godet, S.; Schryvers, D.
Title Effect of deposition rate on the microstructure of electron beam evaporated nanocrystalline palladium thin films Type A1 Journal article
Year 2013 Publication Thin solid films : an international journal on the science and technology of thin and thick films Abbreviated Journal Thin Solid Films
Volume 539 Issue Pages 145-150
Keywords (up) A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract The influence of the deposition rate on the formation of growth twins in nanocrystalline Pd films deposited by electron beam evaporation is investigated using transmission electron microscopy. Statistical measurements prove that twin boundary (TB) density and volume fraction of grains containing twins increase with increasing deposition rate. A clear increase of the dislocation density was observed for the highest deposition rate of 5 Å/s, caused by the increase of the internal stress building up during deposition. Based on crystallographic orientation indexation using transmission electron microscopy, it can be concluded that a {111} crystallographic texture increases with increasing deposition rate even though the {101} crystallographic texture remains dominant. Most of the TBs are fully coherent without any residual dislocations. However, for the highest deposition rate (5 Å/s), the coherency of the TBs decreases significantly as a result of the interaction of lattice dislocations emitted during deposition with the growth TBs. The analysis of the grain boundary character of different Pd films shows that an increasing fraction of high angle grain boundaries with misorientation angles around 5565° leads to a higher potential for twin formation.
Address
Corporate Author Thesis
Publisher Place of Publication Lausanne Editor
Language Wos 000321111100025 Publication Date 2013-05-25
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0040-6090; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.879 Times cited 13 Open Access
Notes Fwo Approved Most recent IF: 1.879; 2013 IF: 1.867
Call Number UA @ lucian @ c:irua:109268 Serial 807
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Author E. Zaghi, A.; Buffière, M.; Koo, J.; Brammertz, G.; Batuk, M.; Verbist, C.; Hadermann, J.; Kim, W.K.; Meuris, M.; Poortmans, J.; Vleugels, J.;
Title Effect of selenium content of CuInSex alloy nanopowder precursors on recrystallization of printed CuInSe2 absorber layers during selenization heat treatment Type A1 Journal article
Year 2014 Publication Thin solid films : an international journal on the science and technology of thin and thick films Abbreviated Journal Thin Solid Films
Volume Issue Pages 1-7
Keywords (up) A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract Polycrystalline CuInSe2 semiconductors are efficient light absorber materials for thin film solar cell technology, whereas printing is one of the promising low cost and non-vacuum approaches for the fabrication of thin film solar cells. The printed precursors are transformed into a dense polycrystalline CuInSe2 semiconductor film via thermal treatment in ambient selenium atmosphere (selenization). In this study, the effect of the selenium content in high purity mechanically synthesized CuInSex (x = 2, 1.5, 1 or 0.5) alloy precursors on the recrystallization of the CuInSe2 phase during the selenization process was investigated. The nanostructure and phase variation of CuInSex nanopowders were investigated by different characterization techniques. The recrystallization process of the 12 μm thick CuInSex coatings into the CuInSe2 phase during selenization in selenium vapor was investigated via in-situ high temperature X-ray diffraction. The CuInSex precursors with lower selenium content showed a more pronounced phase conversion into CuInSe2 compared to the higher selenium content CuInSex precursors. Moreover, the CuInSex (x = 0.5 and 1) precursor resulted in a denser polycrystalline CuInSe2 semiconductor film with larger crystals. This could be attributed to a more intensive atomic interdiffusion within the CuInSex precursor system compared to a CuInSe2 phase precursor, and the formation of intermediate CuSe and CuSe2 fluxing phases during selenization.
Address
Corporate Author Thesis
Publisher Place of Publication Lausanne Editor
Language Wos 000352225900004 Publication Date 2014-10-13
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0040-6090; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.879 Times cited 7 Open Access
Notes Approved Most recent IF: 1.879; 2014 IF: 1.759
Call Number c:irua:121330 Serial 834
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Author Batuk, M.; Buffiere, M.; Zaghi, A.E.; Lenaers, N.; Verbist, C.; Khelifi, S.; Vleugels, J.; Meuris, M.; Hadermann, J.
Title Effect of the burn-out step on the microstructure of the solution-processed Cu(In,Ga)Se2 solar cells Type A1 Journal article
Year 2015 Publication Thin solid films : an international journal on the science and technology of thin and thick films Abbreviated Journal Thin Solid Films
Volume 583 Issue 583 Pages 142-150
Keywords (up) A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract For the development of the photovoltaic industry cheap methods for the synthesis of Cu(In,Ga)Se-2 (CIGSe) based solar cells are required. In this work, CIGSe thin films were obtained by a solution-based method using oxygen-bearing derivatives. With the aimof improving the morphology of the printed CIGSe layers, we investigated two different annealing conditions of the precursor layer, consisting of (1) a direct selenization step (reference process), and (2) a pre-treatment thermal step prior to the selenization. We showed that the use of an Air/H2S burn-out step prior to the selenization step increases the CIGSe grain size and reduces the carbon content. However, it leads to the reduction of the solar cell efficiency from 4.5% in the reference sample down to 0.5% in the annealed sample. Detailed transmission electron microscopy analysis, including high angle annular dark field scanning transmission electron microscopy and energy dispersive X-ray mapping, was applied to characterize the microstructure of the film and to determine the relationship between microstructure and the solar cell performance. We demonstrated that the relatively low efficiency of the reference solar cells is related not only to the nanosize of the CIGSe grains and presence of the pores in the CIGSe layer, but also to the high amount of secondary phases, namely, In/Ga oxide (or hydroxide) amorphous matter, residuals of organicmatter (carbon), and copper sulfide that is formed at the CIGSe/MoSe2 interface. The annealing in H2S during the burn-out step leads to the formation of the copper sulfide at all grain boundaries and surfaces in the CIGSe layer, which results in the noticeably efficiency drop. (C) 2015 Elsevier B.V. All rights reserved.
Address
Corporate Author Thesis
Publisher Place of Publication Lausanne Editor
Language Wos 000353812400024 Publication Date 2015-04-05
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0040-6090; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.879 Times cited 5 Open Access
Notes Approved Most recent IF: 1.879; 2015 IF: 1.759
Call Number c:irua:126009 Serial 845
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Author Tirry, W.; Schryvers, D.; Jorissen, K.; Lamoen, D.
Title Electron-diffraction structure refinement of Ni4Ti3 precipitates in Ni52Ti48 Type A1 Journal article
Year 2006 Publication Acta crystallographica: section B: structural science Abbreviated Journal Acta Crystallogr B
Volume 62 Issue 6 Pages 966-971
Keywords (up) A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Copenhagen Editor
Language Wos 000241992300003 Publication Date 2006-11-16
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0108-7681; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor Times cited 30 Open Access
Notes Fwo Approved Most recent IF: NA
Call Number UA @ lucian @ c:irua:61578 Serial 923
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Author Yang, Z.Q.; Schryvers, D.
Title Electron energy-loss spectroscopy study of NiTi shape memory alloys Type A1 Journal article
Year 2008 Publication Materials science and engineering: part A: structural materials: properties, microstructure and processing Abbreviated Journal Mat Sci Eng A-Struct
Volume 481 Issue Pages 214-217
Keywords (up) A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos 000255716100041 Publication Date 2007-06-11
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0921-5093; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 3.094 Times cited 7 Open Access
Notes Gao Approved Most recent IF: 3.094; 2008 IF: 1.806
Call Number UA @ lucian @ c:irua:69156 Serial 934
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Author Frangis, N.; Van Tendeloo, G.; van Landuyt, J.; Muret, P.; Nguyen, T.T.A.
Title Electron microscopy characterisation of erbium silicide-thin films grown on a Si(111) substrate Type A1 Journal article
Year 1996 Publication Applied surface science Abbreviated Journal Appl Surf Sci
Volume 102 Issue Pages 163-168
Keywords (up) A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Amsterdam Editor
Language Wos A1996VJ86100037 Publication Date 2003-05-12
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0169-4332; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 2.711 Times cited 9 Open Access
Notes Approved no
Call Number UA @ lucian @ c:irua:15458 Serial 953
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Author Zhang, X.B.; Vasiliev, A.L.; Van Tendeloo, G.; He, Y.; Yu, L.-M.; Thiry, P.A.
Title EM, XPS and LEED study of deposition of Ag on hydrogenated Si substrate prepared by wet chemical treatments Type A1 Journal article
Year 1995 Publication Surface science : a journal devoted to the physics and chemistry of interfaces Abbreviated Journal Surf Sci
Volume 340 Issue Pages 317-327
Keywords (up) A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Amsterdam Editor
Language Wos A1995TA17600013 Publication Date 2002-07-25
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0039-6028; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.925 Times cited 11 Open Access
Notes Approved
Call Number UA @ lucian @ c:irua:13319 Serial 1032
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Author Alaria, J.; Borisov, P.; Dyer, M.S.; Manning, T.D.; Lepadatu, S.; Cain, M.G.; Mishina, E.D.; Sherstyuk, N.E.; Ilyin, N.A.; Hadermann, J.; Lederman, D.; Claridge, J.B.; Rosseinsky, M.J.;
Title Engineered spatial inversion symmetry breaking in an oxide heterostructure built from isosymmetric room-temperature magnetically ordered components Type A1 Journal article
Year 2014 Publication Chemical science Abbreviated Journal Chem Sci
Volume 5 Issue 4 Pages 1599-1610
Keywords (up) A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Royal Society of Chemistry Place of Publication Cambridge Editor
Language Wos 000332467400044 Publication Date 2014-01-20
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 2041-6520;2041-6539; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 8.668 Times cited 24 Open Access
Notes Approved Most recent IF: 8.668; 2014 IF: 9.211
Call Number UA @ lucian @ c:irua:117064 Serial 1045
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Author Romano-Rodriguez, A.; Perez-Rodriguez, A.; Serre, C.; van Landuyt, J.; et al.
Title Epitaxial growth of \beta-SiC on ion-beam synthesized \beta-SiC : structural characterization Type A1 Journal article
Year 2000 Publication Materials science forum T2 – International Conference on Silicon Carbide and Related Materials, OCT 10-15, 1999, RES TRIANGLE PK, NORTH CAROLINA Abbreviated Journal Mater Sci Forum
Volume 338-3 Issue Pages 309-312
Keywords (up) A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract In this work we present for the first time, to our knowledge, the CVD epitaxial growth of beta -SiC using an ion beam synthesized (IBS) beta -SiC layer as seed, which has been formed by multiple implantation into Si wafers at 500 degreesC. The ion beam synthesized continuous layer is constituted by beta -SiC nanocrystals that are well oriented relative to the silicon substrate. Comparison of the epitaxial growth on these samples with that on silicon test samples, both on and off-axis, is performed. The results show that the epitaxial growth can be achieved on the IBS samples without the need of the carbonization step and that the structural quality of the CVD layer is comparable to that obtained on a carbonized silicon sample. Improvement of the quality of the deposited layer is proposed.
Address
Corporate Author Thesis
Publisher Trans tech publications ltd Place of Publication Zurich-uetikon Editor
Language Wos 000165996700075 Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0255-5476 ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor Times cited 2 Open Access
Notes Approved Most recent IF: NA
Call Number UA @ lucian @ c:irua:104262 Serial 1071
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Author Lazoryak, B.I.; Morozov, V.A.; Belik, A.A.; Stefanovich, S.Y.; Grebenev, V.V.; Leonidov, I.A.; Mitberg, E.B.; Davydov, S.A.; Lebedev, O.I.; Van Tendeloo, G.
Title Ferroelectric phase transition in the whitlockite-type Ca9Fe(PO4)7; crystal structure of the paraelectric phase at 923 K Type A1 Journal article
Year 2004 Publication Solid state sciences Abbreviated Journal Solid State Sci
Volume 6 Issue 2 Pages 185-195
Keywords (up) A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Amsterdam Editor
Language Wos 000220312700005 Publication Date 2004-02-06
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1293-2558; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.811 Times cited 41 Open Access
Notes Approved Most recent IF: 1.811; 2004 IF: 1.598
Call Number UA @ lucian @ c:irua:54699 Serial 1180
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