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“Electron diffraction evidence for ordering of interstitial silver ions in silver bromide microcrystals”. Goessens C, Schryvers D, van Dyck D, van Landuyt J, de Keyzer R, Icem 13 (1994)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab
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“Electron-diffraction evidence for ordering of interstitial silver ions in silver bromide microcrystals”. Goessens C, Schryvers D, van Dyck D, van Landuyt J, de Keyzer R, Physica status solidi: A 143, 277 (1994). http://doi.org/10.1002/pssa.2211430211
Abstract: The occurrence and origin of diffuse intensity contours in electron micrographs of AgBr crystals are investigated. The observations are interpreted in terms of a model, which attributes diffuse scattering to the presence of predominant atom or vacancy clusters of a particular polyhedral type. It is shown that irrespective of the crystal morphology, interstitial Ag ions order in AgBr material in clusters of finite size along 001 type planes. A different geometry of the diffuse intensity locus observed for triangular and hexagonal tabular grains is explained in terms of the different twin plane morphology of these grains.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab
Times cited: 7
DOI: 10.1002/pssa.2211430211
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“An electron microscopic study of highly oriented undoped and FeCl3-doped poly (p-phenylenevinylene)”. Zhang XB, Van Tendeloo G, van Landuyt J, van Dyck D, Briers J, Bao Y, Geise HJ, Macromolecules 29, 1554 (1996). http://doi.org/10.1021/ma9513067
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab
Impact Factor: 5.8
Times cited: 10
DOI: 10.1021/ma9513067
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“Holotomography: quantitative phase tomography with micrometer resolution using hard synchrotron radiation X-rays”. Cloetens P, Ludwig W, Baruchel J, van Dyck D, van Landuyt J, Guigay JP, Schlenker M, Applied physics letters 75, 2912 (1999). http://doi.org/10.1063/1.125225
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab
Impact Factor: 3.411
Times cited: 481
DOI: 10.1063/1.125225
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“Inelastic scattering of high-energy electrons in a crystal in thermal equilibrium with the environment: 1: theoretical framework”. Fanidis C, van Dyck D, van Landuyt J, Ultramicroscopy 41, 55 (1992). http://doi.org/10.1016/0304-3991(92)90094-Z
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab
Impact Factor: 2.436
Times cited: 17
DOI: 10.1016/0304-3991(92)90094-Z
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“Inelastic scattering of high-energy electrons in a crystal in thermal equilibrium with the environment: part 2: solution of the equations and applications to concrete cases”. Fanidis C, van Dyck D, van Landuyt J, Ultramicroscopy 48, 133 (1993)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab
Impact Factor: 2.436
Times cited: 6
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“Modification of the multislice method for calculating coherent STEM images”. Chen JH, van Dyck D, op de Beeck M, Broeckx J, van Landuyt J, Physica status solidi: A: applied research 150, 13 (1995). http://doi.org/10.1002/pssa.2211500103
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab
Times cited: 5
DOI: 10.1002/pssa.2211500103
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“On the interpretation of HREM images of partially ordered alloys”. De Meulenaere P, Van Tendeloo G, van Landuyt J, van Dyck D, Ultramicroscopy 60, 265 (1995). http://doi.org/10.1016/0304-3991(95)00065-9
Abstract: The ordering for 11/20 alloys has been studied by high-resolution electron microscopy (HREM). The distribution of the intensity maxima in the HREM image have been statistically examined, which provides a profound basis for the image interpretation. Processing of the HREM images allows ''dark-field'' images to be obtained, exhibiting a two-dimensional distribution of those columns which contain the most information in order to interpret the short-range order correlations. Pair correlations and higher cluster correlations between projected columns can be visualised, providing unique information about the ordering as retrieved from an experimental result without any other assumption. The method has been applied to Au4Cr and to Au4Mn to interpret the quenched short-range order state and the transition to long-range order.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab
Impact Factor: 2.436
Times cited: 20
DOI: 10.1016/0304-3991(95)00065-9
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“Up close: Center for Electron Microscopy of Materials Science at the University of Antwerp”. Van Tendeloo G, Schryvers D, van Dyck D, van Landuyt J, Amelinckx S, MRS bulletin , 57 (1994)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab
Impact Factor: 5.667
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“Accurate infrared absorption measurement of interstitial and precipitated oxygen in p+ silicon wafers”. De Gryse O, Clauws P, Rossou L, van Landuyt J, Vanhellemont J, Microelectronic engineering 45, 277 (1999). http://doi.org/10.1016/S0167-9317(99)00180-X
Abstract: A novel infrared absorption method has been developed to measure [he interstitial oxygen concentration in highly doped silicon. Thin samples of the order of 10-30 mu m are prepared in an essentially stress-free state without changing the state of the crystal. The oxygen concentration is then determined by measuring the height of the 1136-cm(-1) absorption peak due to interstitial oxygen at 5.5 K. The obtained results on as-grown samples are compared with those from gas fusion analysis. The precipitated oxygen concentration in annealed samples is also determined with the new method. It will be shown that the interstitial oxygen concentration in highly doped silicon can be determined with high accuracy and down to concentrations of 10(17) cm(-3). (C) 1999 Elsevier Science B.V. All rights reserved.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 1.806
DOI: 10.1016/S0167-9317(99)00180-X
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“Chemical and structural analysis of etching residue layers in semiconductor devices with energy filtering transmission electron microscopy”. Hens S, van Landuyt J, Bender H, Boullart W, Vanhaelemeersch S, Materials science in semiconductor processing 4, 109 (2001). http://doi.org/10.1016/S1369-8001(00)00147-5
Abstract: The use of an energy-filtering held emission gun transmission electron microscope (CM30 FEG Ultratwin) allows, apart from imaging morphologies down to nanometer scale, the fast acquisition of high-resolution element distributions. Electrons that have lost energy corresponding to characteristic inner-shell loss edges are used to form the element maps. The production of Ultra Large-Scale Integration (ULSI) devices with dimensions below 0.25 mum requires among others the formation of a multilayer metallization scheme by means of repeatedly applying the deposition and etching of dielectrics and metals. In this work the evolution of the surface chemical species on etched Al lines in a post-etch cleaning process has been investigated by energy filtering transmission electron microscopy, with the aim to understand the role of each process step on the removal of the etching residues. (C) 2001 Elsevier Science Ltd. All rights reserved.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 2.359
DOI: 10.1016/S1369-8001(00)00147-5
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“Electron microscopy and Rutherford backscattering spectrometry characterisation of 6H SiC samples implanted with He+”. Frangis N, van Landuyt J, Grimaldi MG, Calcagno L, Nuclear instruments and methods in physics research: B: beam interactions with materials and atoms
T2 –, Symposium 1 on New Trends in Ion Beam Processing of Materials, at the, E-MRS 96 Spring Meeting, June 04-07, 1996, Strasbourg, France 120, 186 (1996). http://doi.org/10.1016/S0168-583X(96)00506-X
Abstract: 6H SiC single crystals were implanted al room temperature with 1 MeV He+ up to a fluence of 2 x 10(17) at./cm(2) RBS-channeling analysis with a 2 MeV He+ beam indicated the formation of extended defects or the generation of point defects at a constant concentration over a depth of about 1 mu m. Electron microscopy characterisation revealed the presence of two amorphous buried layers at depths of about 1,75 and 4.8 mu m. They an due to the implantation and to the analysing RES beam, respectively, No extended planar or linear faults were found in the region between the surface and the first amorphous layer. However, at the surface, a 50 nm thick amorphous layer was observed in which crystalline inclusions were embedded. Electron diffraction and HREM data of the inclusions were typical for diamond, These inclusions were even found in the crystalline SiC material below this layer, however at a reduced density.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 1.124
Times cited: 2
DOI: 10.1016/S0168-583X(96)00506-X
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“The influence of crystal thickness on the image tone”. van Renterghem W, Schryvers D, van Landuyt J, van Roost C, de Keyzer R, Journal of imaging science 47, 133 (2003)
Abstract: It is known that the neutral image tone of a developed photographic film becomes brownish when the thickness of the original silver halide tabular crystals is reduced. We investigate by electron microscopy to what extent the silver filament structure has changed and how it induces the shift in image tone. Therefore, two samples of AgBr {111} tabular crystals with average thicknesses of 160 nm and 90 nm respectively, are compared. It is shown that the dimensions and defect structure of the filaments are comparable, but that the 90 nm crystals result in a more widely spaced structure, which explains the shift in image tone on a qualitative level. The influence of the addition of an image toner, i.e., phenylmercaptotetrazole, on the filament structure is also investigated. An even more open filament structure of longer, but smaller filaments was observed.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 0.348
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“Ion beam synthesis of \beta-SiC at 950 degrees C and structural characterization”. Frangis N, Nejim A, Hemment PLF, Stoemenos J, van Landuyt J, Nuclear instruments and methods in physics research: B: beam interactions with materials and atoms
T2 –, Symposium J on Correlated Effects in Atomic and Cluster Ion Bombardment and Implantation/Symposium C on Pushing the Limits of Ion Beam, Processing –, Fr 112, 325 (1996). http://doi.org/10.1016/0168-583X(95)01236-2
Abstract: The structure of beta-SiC formed by carbon implantation into Si at high temperatures (850-950 degrees C) at doses ranging between 0.2 X 10(18) to 1 X 10(18) cm(-2) at 200 keV, was studied by combined cross section and high resolution transmission electron microscopy (XTEM and HRTEM). Implantation was performed on (001) and (111) Si wafers. In both cases a buried beta-SiC layer was formed having the same orientation as the Si matrix.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 1.124
Times cited: 9
DOI: 10.1016/0168-583X(95)01236-2
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“Point defect reactions in silicon studied in situ by high flux electron irradiation in high voltage transmission electron microscope”. Vanhellemont J, Romano Rodriguez A, Fedina L, van Landuyt J, Aseev A, Materials science and technology 11, 1194 (1995). http://doi.org/10.1179/mst.1995.11.11.1194
Abstract: Results are presented of in situ studies of 1 MeV electron irradiation induced (113) defect generation in silicon containing different types and concentrations of extrinsic point defects. A semiquantitative model is developed describing the influence of interfaces and stress fields and of extrinsic point defects on the (113) defect generation in silicon during irradiation. The theoretical results obtained are correlated with experimental data obtained on silicon uniformly doped with boron and phosphorus and with observations obtained by irradiating cross-sectional samples of wafers with highly doped surface layers. It is shown that in situ irradiation in a high voltage election microscope is a powerful tool for studying local point defect reactions in silicon. (C) 1995 The Institute of Materials.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 0.995
Times cited: 7
DOI: 10.1179/mst.1995.11.11.1194
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“Structural characterisation of erbium silicide thin films of an Si(111) substrate”. Frangis N, Van Tendeloo G, van Landuyt J, Muret P, Nguyen TTA, Journal of alloys and compounds 234, 244 (1996). http://doi.org/10.1016/0925-8388(95)02131-0
Abstract: ErSi2-x films (x = 0.1-0.3) grown by co-evaporation at different deposition ratios have been characterised by transmission electron microscopy, electron diffraction and high resolution electron microscopy. A very good epitaxial growth relation with the Si substrate was deduced for a1 samples and observed phases. Different defect modulated structures are formed; they can be described as structural variants (orthorhombic or rhombohedral) of the basic structure. The modulated phases are related to deviations from stoichiometry similar to crystallographic shear structures. The ErSi1.9 material contains Si precipitates, illustrating the preference for the ErSi1.7 composition to be maintained.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 2.999
Times cited: 14
DOI: 10.1016/0925-8388(95)02131-0
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“The use of convergent beam electron diffraction for stress measurements in shallow trench isolation structures”. Stuer C, van Landuyt J, Bender H, Rooyackers R, Badenes G, Materials science in semiconductor processing 4, 117 (2001). http://doi.org/10.1016/S1369-8001(00)00110-4
Abstract: Shallow trench isolation (STI) is a promising technology for the isolation structures of the new generation of ULSI devices with dimensions below 0.18 mum. The various processing steps cause stress fields in STI structures, which can lead to defect formation in the silicon substrate. In their turn, stress fields affect the electrical parameters and the reliability of devices. Convergent beam electron diffraction (CBED) is used in this study to examine the influence of a wet and a dry pre-gate oxidation on the stress distribution around STI structures. The measurements are performed on STI structures with different width and spacing. CBED analysis is compared with bright-field TEM images. Defects are observed in high-strain areas of small isolated structures. (C) 2001 Elsevier Science Ltd. All rights reserved.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 2.359
Times cited: 6
DOI: 10.1016/S1369-8001(00)00110-4
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“Characteristic mosaic texture related to orderingin AuCu-9at.%Ag pseudobinary alloy”. Yasuda K, Hisatsune K, Udoh K, Tanaka Y, Van Tendeloo G, van Landuyt J, Dentistry in Japan 29, 91 (1992)
Keywords: A3 Journal article; Electron microscopy for materials research (EMAT)
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“HREM imaging analysis in the study of pretransition and nucleation phenomena in alloys”. Schryvers D, Van Tendeloo G, van Landuyt J, Tanner LE, Icem 13, 659 (1994)
Keywords: A3 Journal article; Electron microscopy for materials research (EMAT)
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“HREM study of Rb6C60 and helical carbon nanotubules”. Bernaerts D, Zhang XB, Zhang XF, Van Tendeloo G, van Landuyt J, Amelinckx S, Icem 13, 305 (1994)
Keywords: A3 Journal article; Electron microscopy for materials research (EMAT)
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“Ion beam synthesis of β-SiC at 9500C and structural characterization”. Frangis N, Nejim A, Hemment PLF, Stoemenos J, van Landuyt J, Nuclear instruments and methods in physics research B112, 325 (1996)
Keywords: A3 Journal article; Electron microscopy for materials research (EMAT)
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“Point defect reactions in silicon studies in situ by high flux electron irradiation in high voltage transmission electron microscope”. Vanhellemont J, Romano-Rodriguez A, Fedina L, van Landuyt J, Aseev A, Materials science and technology 11, 1194 (1995)
Keywords: A3 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 7
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“Een tempel voor elektronenmicroscopie “kijken naar atomen””. van Landuyt J, Fonds informatief 38, 13 (1998)
Keywords: A3 Journal article; Electron microscopy for materials research (EMAT)
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“Electron microscopy study of twin sequences and branching in NissAl34 3R martensite”. Schryvers D, Van Landuyt J, ICOMAT (1992)
Abstract: Microtwin sequences in Ni66Al34 martensite plates of different size were investigated by electron microscopy. Although mostly irregular sequences were observed an average twin width w can be determined which increases with twin length L following the expected relation w ~ sqrt(L). High resolution electron microscopy was used to study the twin branching close to the plate boundaries and an atomic model for the branching of a microtwin and the changes in twin thickness is suggested
Keywords: A3 Journal Article; Electron Microscopy for Materials Science (EMAT) ;
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“A temperature study of mixed AgBr-AgBrI tabular crystals”. Goessens C, Schryvers D, van Landuyt J, Geuens I, Gijbels R, Jacob W, de Keyzer R Hawaii, page 70 (1995).
Keywords: H1 Book chapter; Electron microscopy for materials research (EMAT); Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Times cited: 3
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“Charcaterization by high-resolution transmission electron microscopy”. van Landuyt J, Van Tendeloo G Stt, Den Haag, page 187 (1998).
Keywords: H3 Book chapter; Electron microscopy for materials research (EMAT)
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“Electron microscopy of interfaces in new materials”. Van Tendeloo G, Goessens C, Schryvers D, van Haverbergh J, de Veirman A, van Landuyt J s.l., page 200 (1991).
Keywords: H3 Book chapter; Electron microscopy for materials research (EMAT)
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“High resolution electron microscopy for materials”. van Landuyt J Eurem 92, Granada, page 23 (1992).
Keywords: H3 Book chapter; Electron microscopy for materials research (EMAT)
Times cited: 7
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“High-resolution electron microscopy for semiconducting materials science”. van Landuyt J, Vanhellemont J Elsevier, Amsterdam, page 1109 (1994).
Keywords: H3 Book chapter; Electron microscopy for materials research (EMAT)
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“In situ HREM study of electron irradiation effects in AgCl microcrystals”. Goessens C, Schryvers D, de Keyzer R, van Landuyt J Eurem 92, Granada, page 646 (1992).
Keywords: H3 Book chapter; Electron microscopy for materials research (EMAT)
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