Abstract: Single-crystalline MnOOH and Mn3O4 nanowires have been prepared by hydrothermal treatment of commercial bulky manganese oxide particles. beta-MnO2 and alpha-Mn2O3 nanowires were prepared by calcination of MnOOH nanowires. Transmission electron microscopy analysis demonstrates that MnOOH nanowires grow directly from MnO2 raw particles. The diameter of the nanowires is 20-70 nm, while the length can reach several micrometers. MnOOH nanowires grow preferentially along the [010] direction and Mn3O4 nanowires prefer to grow along the [001] direction; the long dimension of both beta-MnO2 and alpha-Mn2O3 nanowires is along [001]. Electron energy-loss spectroscopy analysis shows that the position of the prepeak of the oxygen K edge shifts to higher energy and the energy separation between the two main peaks of the oxygen K edge decreases with decreasing manganese oxidation state. The manganese-white-line ratios (L-3/L-2) were calculated. (C) 2005 American Institute of Physics.

Abstract: Transmission electron microscopy has been applied to study Ti and Al/Ti contacts on GaN and AlGaN/GaN as a function of annealing temperature. This has lead to a profound understanding of the role of Al, both in the contact formation on n-GaN and on AlGaN/GaN. Al in the AlGaN decreases the N-extraction by Ti out of the nitride, because of the strong Al-N bond. Al in the metal bilayer also reduces the N-extraction by Ti due to a preferential alloy mixing.

Abstract: A theoretical framework is described to understand the results of plasmon holography experiments leading to insight in the meaning of the experimental results and pointing out directions for future experiments. The framework is based on the formalism of mutual intensity to describe how coherence is transferred through an optical system. For the inelastic interaction with the object, an expression for the volume. plasmon excitations in a free electron gas is used as a model for the behaviour of aluminium. The formalism leads to a clear graphical intuitive tool for under-standing the experiments. It becomes evident that the measured coherence is solely related to the angular distribution of the plasmon scattering in the case of bulk plasmons. After describing the framework, the special case of coherence outside a spherical particle is treated and the seemingly controversial idea of a plasmon with a limited coherence length obtained front experiments is clarified. (C) 2004 Elsevier B.V. All rights reserved.

Abstract: This work provides values of electron scattering 002 structure factors for InxGa1-xAs as a function of the In concentration x=0 to 1. These results allow accurate compositional analysis of pseudomorphically grown InxGa1-xAs/GaAs layers by transmission electron microscopy methods relying on the chemical sensitivity of the (002) beam. The calculations go beyond the limits of the isolated atom approximation, because they take into account charge redistribution effects between atomic sites in the crystal, strain, and static atomic displacements. The computations were performed by the full potential linearized augmented plane-wave method using a generalized gradient approximation for the exchange and correlation part of the potential. The calculations of strained InxGa1-xAs correspond to the strain state in specimens with large, small, and intermediate thickness in the electron beam direction. Additionally, the effect of static atomic displacements is taken into account. All results are listed in a parameterized form. The calculated 002 structure factor vanishes at an In concentration of 16.4%. This value is in a good agreement with previously reported experimental measurements. Hence, our results are a significant improvement with respect to the isolated atom approximation which is conventionally applied in transmission electron microscopy simulations, and which predicts a value of 22.5%.

Abstract: The electron wave functions in the inversion layer are analyzed in the case where the dielectric barriers are not infinite. This forces the electron concentration closer to the interface silicon/oxide and reduces the subband energy. This treatment of the inversion layer is extended to the calculation of the electron mobility degradation due to remote Coulomb scattering on a high-k dielectric stacked transistor. The subband energy reduction leads to a decrease of the scattering charge needed to explain the experimental results. This model can also fit better the experimental data when compared with the case where no barrier permeation is considered.

Abstract: The temperature-dependent magnetoresistance effect is investigated in a magnetically modulated two-dimensional (21)) electron gas (2DEG) which can be realized by depositing two parallel ferromagnets on top of a 2DEG electron gas. In the resonant tunnelling regime the transmission for the parallel and antiparallel magnetization configurations shows a quite distinct dependence on the longitudinal wave vector of the incident electrons. This leads to a very large magneto resistance ratio with a strong temperature dependence. (C) 2004 Elsevier B.V. All rights reserved.

Abstract: The impact of interfacial chemistry occurring at dielectric/gate interface of P-MOS and N-MOS devices is reviewed through a quick literature survey. A specific emphasis is put on the way the bond polarization that occurs between a dielectric and a metal substrate impacts on the gate work function. First-principle simulations are then used to study the work function changes induced by dopant aggregation in nickel monosilicide metal gates. It is shown that the changes are a natural consequence of the variation of the interface polarization.