Abstract: Exciton states in self-assembled InP/In0.49Ga0.51P quantum dots subject to magnetic fields up to 50T are calculated. Strain and band mixing are explicitly taken into account in the single-particle models of the electronic structure, while an exact diagonalization approach is adopted to compute the exciton states. Reasonably good agreement with magneto-photoluminescence measurements on InP self-assembled quantum dots is found. As a result of the polarization and angular momentum sensitive selection rules, the exciton ground state is dark. For in-plane polarized light, the magnetic field barely affects the exciton spatial localization, and consequently the exciton oscillator strength for recombination increases only slightly with increasing field. For z polarized light, a sharp increase of the oscillator strength beyond 30 T is found which is attributed to the enhanced s character of the relevant portion of the exciton wave function. (C) 2004 Elsevier B.V. All rights reserved.

Abstract: We report the suppression of the Hall effect in a mesoscopic Hall cross with a strong magnetic field only in the centre and vanishingly small outside, The local magnetic field is produced by placing Dy pillar on top of a structure with a high-mobility two-dimensional electron gas. The effect is found to be due to a sharp increase of the number of back-scattered and quasi-localised electron orbits. The possibility of localising electrons inside the magnetic inhomogeneity region is discussed. (C) 2002 Elsevier Science B.V. All rights reserved.

Abstract: We present a theoretical study of the optoelectronic properties of monolayer graphene. Including the effect of the electron-photon-phonon scattering, we employ the mass- and energy-balance equations derived from the Boltzmann equation to evaluate self-consistently the carrier densities, optical conductance and transmission coefficient in graphene in the presence of linearly polarized radiation field. We find that the photo-excited carrier density can be increased under infrared radiation and depend strongly on radiation intensity and frequency. For short wavelengths (lambda <3 mu m), the universal optical conductance sigma(0) = e(2)/4h is obtained and the light transmittance is about 0.97-0.98. Interestingly, there is an optical absorption window in the range 4-100 mu m which is induced by different transition energies required for inter- and intra-band optical absorption. The position and width of this absorption window depend sensitively on temperature and carrier density of the system. These results are relevant for applications of recently developed graphene devices in advanced optoelectronics such as the infrared photodetectors. Crown Copyright (C) 2009 Published by Elsevier B.V. All rights reserved.