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Author Van de Put, M.L.; Vandenberghe, W.G.; Magnus, W.; Sorée, B.
Title An envelope function formalism for lattice-matched heterostructures Type A1 Journal article
Year 2015 Publication Physica: B : condensed matter Abbreviated Journal Physica B
Volume 470-471 Issue (up) 470-471 Pages 69-75
Keywords A1 Journal article; Condensed Matter Theory (CMT)
Abstract The envelope function method traditionally employs a single basis set which, in practice, relates to a single material because the k.p matrix elements are generally only known in a particular basis. In this work, we defined a basis function transformation to alleviate this restriction. The transformation is completely described by the known inter-band momentum matrix elements. The resulting envelope function equation can solve the electronic structure in lattice matched heterostructures without resorting to boundary conditions at the interface between materials, while all unit-cell averaged observables can be calculated as with the standard envelope function formalism. In the case of two coupled bands, this heterostructure formalism is equivalent to the standard formalism while taking position dependent matrix elements. (C) 2015 Elsevier B.V. All rights reserved
Address
Corporate Author Thesis
Publisher Place of Publication Amsterdam Editor
Language Wos 000355149600011 Publication Date 2015-04-26
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0921-4526; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.386 Times cited 5 Open Access
Notes ; ; Approved Most recent IF: 1.386; 2015 IF: 1.319
Call Number c:irua:126397 Serial 95
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Author Sudheendra, L.; Moshnyaga, V.; Lebedev, O.I.; Gehrke, K.; Belenciuc, A.; Shapoval, O.; Van Tendeloo, G.; Samwer, K.
Title A-site ordering and stripe phases in manganite films Type A1 Journal article
Year 2008 Publication Physica: B : condensed matter T2 – International Conference on Strongly Correlated Electron Systems (SCES, 2007), MAY 13-18, 2007, Houston, TX Abbreviated Journal Physica B
Volume 403 Issue (up) 5-9 Pages 1645-1646
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract Insulating and metallic stripes above and below the Curie temperature, T-C, respectively, were observed by a high-resolution scanning tunneling microscopy (STM) and/or spectroscopy (STS) in A-site ordered and macroscopically strain free epitaxial La0.75Ca0.25MnO3 film grown on MgO substrate. The “insulating” stripes were found to be incommensurable to the lattice and aligned along (110) direction. Metallic stripes were commensurable with periodicity 2a(p)similar to 0.8 nm and aligned parallel to the crystallographic a/b-axis. Formation of these stripes involves competing charge, orbital, and lattice orders and is an outcome of an overlapping of electron wave functions mediated by the local lattice-strain distribution, existed even in A-site ordered film due to the difference in cation radii of La and Ca. (C) 2007 Elsevier B.V. All rights reserved.
Address
Corporate Author Thesis
Publisher Place of Publication Amsterdam Editor
Language Wos 000254689900330 Publication Date 2007-11-06
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0921-4526; ISBN Additional Links UA library record; WoS full record
Impact Factor 1.386 Times cited Open Access
Notes Approved Most recent IF: 1.386; 2008 IF: 0.822
Call Number UA @ lucian @ c:irua:104031 Serial 26
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Author Ivanov, V.A.; Krstajic, P.M.; Peeters, F.M.; Fleurov, V.; Kikoin, K.
Title On the ferromagnetic exchange in Mn-doped III-V semiconductors Type A1 Journal article
Year 2003 Publication Physica: B : condensed matter T2 – 23rd International Conference on Low Temperature Physics (LT23), AUG 20-27, 2002, HIROSHIMA, JAPAN Abbreviated Journal Physica B
Volume 329 Issue (up) Part 2 Pages 1282-1283
Keywords A1 Journal article; Condensed Matter Theory (CMT)
Abstract We propose a microscopic model for double exchange in GaAs:Mn, GaP:Mn which is based on the interaction between the transition metal impurities and the heavy holes of host semiconductor. The kinematic exchange is derived and the Curie temperature is calculated which agrees with recent experiments. (C) 2003 Elsevier Science B.V. All rights reserved.
Address
Corporate Author Thesis
Publisher Place of Publication Amsterdam Editor
Language Wos 000183802700400 Publication Date 2003-02-28
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0921-4526; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.386 Times cited 5 Open Access
Notes Approved Most recent IF: 1.386; 2003 IF: 0.908
Call Number UA @ lucian @ c:irua:103813 Serial 2435
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