“Application of optical beams to electrons in graphene”. Matulis A, Masir MR, Peeters FM, Physical review : B : condensed matter and materials physics 83, 115458 (2011). http://doi.org/10.1103/PhysRevB.83.115458
Abstract: The technique of beam optics is applied to the description of the wave function of Dirac electrons. This approach is illustrated by considering electron transmission through simple nonhomogeneous structures, such as flat and bent p-n junctions and superlattices. We found that a convex p-n junction compresses the beam waist, while a concave interface widens it without loosing its focusing properties. At a flat p-n junction the waist of the transmitted Gaussian beam can be narrowed or widened, depending on the angle of incidence. A general condition is derived for the occurrence of beam collimation in a superlattice which is less stringent than previous discussed.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 13
DOI: 10.1103/PhysRevB.83.115458
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“Crosshatching on La0.5Ca0.5MnO3 ultrathin films epitaxially grown on SrTiO3(100)”. Wang Z-H, Lebedev OI, Van Tendeloo G, Cristiani G, Habermeier H-U, Physical review : B : condensed matter and materials physics 77, 1 (2008). http://doi.org/10.1103/PhysRevB.77.115330
Abstract: The morphological evolution in La(0.5)Ca(0.5)MnO(3)/SrTiO(3)(100) ultrathin films has been revealed by atomic force microscopy. It was found that ordered linear defects, which are in 1-2 unit cells high and oriented along the cubic [110] and [100] directions, first appear on the smooth surface of films with a thickness of 10 nm. As the epitaxial growth proceeds, these lines on surface develop into a crosshatch pattern for films with a thickness of 25 nm. Using the results of transmission electron microscopy and electrical measurements, we discuss the interplay between the surface pattern formation, the internal dislocation structure, and the variations in the electrical properties.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.836
Times cited: 8
DOI: 10.1103/PhysRevB.77.115330
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“Effect of spin-orbit couplings in graphene with and without potential modulation”. Shakouri K, Masir MR, Jellal A, Choubabi EB, Peeters FM, Physical review : B : condensed matter and materials physics 88, 115408 (2013). http://doi.org/10.1103/PhysRevB.88.115408
Abstract: We investigate the effect of Rashba and intrinsic spin-orbit couplings on the electronic properties and spin configurations of Dirac fermions confined in: (i) a flat graphene sheet, (ii) a graphene wire with p-n-p structure, and (iii) a superlattice of graphene wires. The interplay between the spin-orbit interaction mechanisms breaks the electron-hole symmetry and the spin configuration induced by Rashba spin-orbit coupling lacks inversion symmetry in k space. We show that the Rashba spin-orbit interaction doubles the Fabry-Perot resonant modes in the transmission spectrum of a graphene wire and opens new channels for the electron transmission. Moreover, it leads to the appearance of spin split extra Dirac cones in the energy spectrum of a graphene superlattice. It is shown that the spin of the electrons and holes confined in a flat graphene sheet is always perpendicular to their motion while this is not the case for the other nanostructures.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 36
DOI: 10.1103/PhysRevB.88.115408
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“Electron tunneling through double magnetic barriers on the surface of a topological insulator”. Wu Z, Peeters FM, Chang K, Physical review : B : condensed matter and materials physics 82, 115211 (2010). http://doi.org/10.1103/PhysRevB.82.115211
Abstract: We study electron tunneling through a planar magnetic and electric barrier on the surface of a three-dimensional topological insulator. For the double barrier structures, we find (i) a directional-dependent tunneling which is sensitive to the magnetic field configuration and the electric gate voltage, (ii) a spin rotation controlled by the magnetic field and the gate voltage, (iii) many Fabry-Pérot resonances in the transmission determined by the distance between the two barriers, and (iv) the electrostatic potential can enhance the difference in the transmission between the two magnetization configurations, and consequently lead to a giant magnetoresistance. Points (i), (iii), and (iv) are alike with that in graphene stemming from the same linear-dispersion relations.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 65
DOI: 10.1103/PhysRevB.82.115211
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“Electronic and dynamical properties of Si/Ge core-shell nanowires”. Peelaers H, Partoens B, Peeters FM, Physical review : B : condensed matter and materials physics 82, 113411 (2010). http://doi.org/10.1103/PhysRevB.82.113411
Abstract: Full ab initio techniques are applied to study the electronic and dynamical properties of free standing, hydrogen-passivated Si/Ge core-shell nanowires oriented along the [110] direction. All studied wires exhibit a direct band gap and are found to be structurally stable. The different contributions of the core and shell atoms to the phonon spectra are identified. The acoustic phonon velocities and the frequencies of some typical optical modes are compared with those of pure Si and Ge nanowires. These depend either on the concentration or on the type of core material. Optical modes are hardened and longitudinal acoustic velocities are softened with decreasing wire diameter.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 13
DOI: 10.1103/PhysRevB.82.113411
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“Electronic structure of a hexagonal graphene flake subjected to triaxial stress”. Neek-Amal M, Covaci L, Shakouri K, Peeters FM, Physical review : B : condensed matter and materials physics 88, 115428 (2013). http://doi.org/10.1103/PhysRevB.88.115428
Abstract: The electronic properties of a triaxially strained hexagonal graphene flake with either armchair or zigzag edges are investigated using molecular dynamics simulations and tight-binding calculations. We found that (i) the pseudomagnetic field in strained graphene flakes is not uniform neither in the center nor at the edge of zigzag terminated flakes, (ii) the pseudomagnetic field is almost zero in the center of armchair terminated flakes but increases dramatically near the edges, (iii) the pseudomagnetic field increases linearly with strain, for strains lower than 15% but increases nonlinearly beyond it, (iv) the local density of states in the center of the zigzag hexagon exhibits pseudo-Landau levels with broken sublattice symmetry in the zeroth pseudo-Landau level, and in addition there is a shift in the Dirac cone due to strain induced scalar potentials, and (v) there is size effect in pseudomagnetic field. This study provides a realistic model of the electronic properties of inhomogeneously strained graphene where the relaxation of the atomic positions is correctly included together with strain induced modifications of the hopping terms up to next-nearest neighbors.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 46
DOI: 10.1103/PhysRevB.88.115428
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“Erratum: Spontaneous magnetization and electron momentum density in three-dimensional quantum dots [Phys. Rev. B 68, 165326 (2003)]”. Saniz R, Barbiellini B, Denison AB, Bansil A, Physical review : B : condensed matter and materials physics 84, 119907 (2011). http://doi.org/10.1103/PhysRevB.84.119907
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
DOI: 10.1103/PhysRevB.84.119907
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“Fabry-Pérot resonances in graphene microstructures: influence of a magnetic field”. Masir MR, Vasilopoulos P, Peeters FM, Physical review : B : condensed matter and materials physics 82, 115417 (2010). http://doi.org/10.1103/PhysRevB.82.115417
Abstract: Fabry-Pérot resonances in the transmission through single and double, graphene-based barriers (of height V) and wells are investigated and their dependence on an applied perpendicular magnetic field. For rectangular barriers the conductance decreases with increasing magnetic field while the resonances weaken (become more pronounced) with increasing magnetic field for EF<V (EF>V). The position of the resonances exhibit a linear shift with magnetic field which move to lower (higher) energy for EF<V (EF>V). Compared to semielliptic- or Gaussian-shaped barriers they show a smaller number of resonances in the absence of a magnetic field and an overall lower conductance but the resonant structure is more pronounced. The conductance of asymmetric double barriers show two major regions of resonances while the symmetric ones show one, that of three asymmetric barriers three, and so on.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 74
DOI: 10.1103/PhysRevB.82.115417
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“Faceted sidewalls of silicon nanowires: Au-induced structural reconstructions and electronic properties”. Xu T, Nys J-P, Addad A, Lebedev OI, Urbieta A, Salhi B, Berthe M, Grandidier B, Stievenard D, Physical review : B : condensed matter and materials physics 81, 115403 (2010). http://doi.org/10.1103/PhysRevB.81.115403
Abstract: Si nanowires with a ⟨111⟩ orientation, synthesized by vapor-liquid-solid process with low silane partial pressure reactant and gold as the catalyst, are known to exhibit sawtooth facets containing gold adsorbates. We report herein the study of the nanowire morphology by means of transmission electron microscopy and scanning tunneling microscopy. The nanowires consist of faceted sidewalls. The number of the sidewalls changes from 12 to 6 along the growth axis, giving rise to nanowires with an irregular hexagonal cross section at their base. The sidewalls are covered with Au-rich clusters. Their facets also exhibit atomic structures that reveal the presence of gold, resulting from the diffusion of gold during the growth. Based on these observations, the tapering of the nanowire is found to be related to two contributions: the reduction in the catalyst particle size during the growth and lateral overgrowth from the direct incorporation of Si species onto the nanowire sidewalls. Because the rearrangement of atoms at surfaces and interfaces might affect the growth kinetics, the trigonal symmetry as well as the higher lateral growth rate on the widest sidewalls are explained from the existence of an interfacial atomic structure with two inequivalent parts in the unit cell. Finally, spectroscopic measurements were performed on the major facets and revealed a metallic behavior at 77 K.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.836
Times cited: 42
DOI: 10.1103/PhysRevB.81.115403
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“Gapless interface states at the junction between two topological insulators”. De Beule C, Partoens B, Physical review : B : condensed matter and materials physics 87, 115113 (2013). http://doi.org/10.1103/PhysRevB.87.115113
Abstract: We consider a junction between two topological insulators and calculate the properties of the interface states with an effective low-energy Hamiltonian for topological insulators with a single cone on the surface. This system bears a close resemblance to bilayer graphene, as both result from the hybridization of Dirac cones. We find gapless interface states not only when the helicity directions of the topological surface states are oppositely oriented, but they can also exist if they are equally oriented. Furthermore, we find that the existence of the interface states can be understood from the closing of the bulk gap when the helicity changes orientation. Recently superluminal tachyonic excitations were also claimed to exist at the interface between topological insulators. However, here we show that these interface states do not exist. DOI: 10.1103/PhysRevB.87.115113
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 8
DOI: 10.1103/PhysRevB.87.115113
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“High-temperature conductance of a two-dimensional superlattice controlled by spin-orbit interaction”. Földi P, Szaszkó-Bogár V, Peeters FM, Physical review : B : condensed matter and materials physics 83, 115313 (2011). http://doi.org/10.1103/PhysRevB.83.115313
Abstract: Rashba-type spin-orbit interaction (SOI) controlled band structure of a two-dimensional superlattice allows for the modulation of the conductance of finite size devices by changing the strength of the SOI. We consider rectangular arrays and find that the temperature dependence of the conductance disappears for high temperatures, but the strength of the SOI still affects the conductance at these temperatures. The modulation effect can be seen even in the presence of strong dephasing, which can be important for practical applications.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 8
DOI: 10.1103/PhysRevB.83.115313
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“Impurity band and magnetic-field-induced metal-insulator transition in a doped GaAs/AlxGa1-xAs superlattice”. Hilber W, Helm M, Peeters FM, Alavi K, Pathak RN, Physical review : B : condensed matter and materials physics 53, 6919 (1996). http://doi.org/10.1103/PhysRevB.53.6919
Abstract: A combination of infrared spectroscopy and magnetotransport is used to investigate the impurity band and the magnetic-field-induced metal-insulator transition in n-type GaAs/AlxGa1-xAs superlattices. The dropping of the Fermi level from the conduction band into the impurity band upon increasing magnetic field is observed in a sample doped to n=4n(c), where n(c) is the critical density according to the Mott criterion. The metal-insulator transition takes place while the Fermi level is in the impurity band, with no qualitative change from the metallic to the insulating side. Due to the anisotropy of the superlattice band structure, the metal-insulator transition is shifted to higher magnetic field, when the magnetic field is tilted away from the growth axis towards the layer planes.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.736
Times cited: 14
DOI: 10.1103/PhysRevB.53.6919
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“Interface controlled electronic variations in correlated heterostructures”. Gehrke K, Moshnyaga V, Samwer K, Lebedev OI, Verbeeck J, Kirilenko D, Van Tendeloo G, Physical review : B : condensed matter and materials physics 82, 113101 (2010). http://doi.org/10.1103/PhysRevB.82.113101
Abstract: An interface modification of (LaCa)MnO3-BaTiO3 superlattices was found to massively influence magnetic and magnetotransport properties. Moreover it determines the crystal structure of the manganite layers, changing it from orthorhombic (Pnma) for the conventional superlattice (cSL), to rhombohedral (R3̅ c) for the modified one (mSL). While the cSL shows extremely nonlinear ac transport, the mSL is an electrically homogeneous material. The observations go beyond an oversimplified picture of dead interface layers and evidence the importance of electronic correlations at perovskite interfaces.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.836
Times cited: 9
DOI: 10.1103/PhysRevB.82.113101
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“Landau levels and oscillator strength in a biased bilayer of graphene”. Milton Pereira J, Peeters FM, Vasilopoulos P, Physical review : B : condensed matter and materials physics 76, 115419 (2007). http://doi.org/10.1103/PhysRevB.76.115419
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 91
DOI: 10.1103/PhysRevB.76.115419
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“Magnetic-field-induced binding of few-electron systems in shallow quantum dots”. Szafran B, Bednarek S, Peeters FM, Physical review : B : condensed matter and materials physics 74, 115310 (2006). http://doi.org/10.1103/PhysRevB.74.115310
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 2
DOI: 10.1103/PhysRevB.74.115310
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“Multisubband electron-transport in delta-doped semiconductor systems”. Hai, Studart, Peeters FM, Physical review : B : condensed matter and materials physics 52, 8363 (1995). http://doi.org/10.1103/PhysRevB.52.8363
Abstract: The electron transport properties in delta-doped semiconductor systems-are studied. The subband electronic structure of the delta-doped system is obtained by solving the coupled Schrodinger and Poisson equations. The screening of the quasi-two-dimensional electron gas is taken into account for the ionized impurity scattering through the matrix dielectric function within the random-phase approximation. The quantum and transport mobilities are calculated numerically as a function of the total electron density and the width of the doped layer at zero temperature. The intersubband scattering and the effect of empty subbands above the Fermi level on the electron mobilities are investigated. The calculated mobilities are in reasonable agreement with the available experimental results.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.736
Times cited: 67
DOI: 10.1103/PhysRevB.52.8363
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“Phonon dispersions and piezoelectricity in bulk and multilayers of hexagonal boron nitride”. Michel KH, Verberck B, Physical review : B : condensed matter and materials physics 83, 115328 (2011). http://doi.org/10.1103/PhysRevB.83.115328
Abstract: A unified theory of phonon dispersions and piezoelectricity in bulk and multilayers of hexagonal boron nitride (h-BN) is derived. The dynamical matrix is calculated on the basis of an empirical force constant model of intralayer valence and interlayer van der Waals interactions. Coulomb interactions are calculated by Ewalds method, adapted for the three-dimensional (3D) and the multilayer case. The deformation of the ionic charge distribution with long-wave lattice displacements is taken into account. Special attention is devoted to the nonanalytic long-range Coulomb contribution to the dynamical matrix which is different for the 3D crystal and the multilayer case. Consequently there is a splitting of the transverse optical (TO) and longitudinal optical (LO) phonon branches of E1u symmetry and a discontinuity of the A2u branch at the Γ point in 3D h-BN. No such splitting and discontinuity at Γ are present in multilayer crystals with a finite number N of layers. There a diverging bundle of N overbending optical phonon branches emerges from Γ. Borns long-wave theory is applied and extended for the study of piezoelectricity in layered crystals. While 3D h-BN and h-BN multilayers with an even number of layers (symmetry D6h) are not piezoelectric, multilayers with an uneven number of Nu layers (symmetry D3h) are piezoelectric; the piezoelectric coefficient e1,11 is inversely proportional to Nu.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 82
DOI: 10.1103/PhysRevB.83.115328
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“Real-space multiple scattering method for angle-resolved photoemission and valence-band photoelectron diffraction and its application to Cu(111)”. Krüger P, da Pieve F, Osterwalder J, Physical review : B : condensed matter and materials physics 83, 115437 (2011). http://doi.org/10.1103/PhysRevB.83.115437
Abstract: A computational method is presented for angle-resolved photoemission spectra (ARPES) and photoelectron diffraction (PED) in the ultraviolet regime. The one-step model is employed and both initial valence and final continuum states are calculated using the finite-cluster, real-space multiple scattering method. Thereby the approach is versatile and provides a natural link to core-level PED. The method is applied to the Cu(111) valence band and good agreement with experiment is found for both ARPES spectra and PED patterns. When the PED patterns are integrated over a filled band of a single-orbital symmetry, such as Cu-3d, we show, both numerically and analytically, that the exact theory with delocalized initial states can be replaced by the much simpler, core-level-type theory where the initial states are taken as localized.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.836
Times cited: 17
DOI: 10.1103/PhysRevB.83.115437
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“Resonant valley filtering of massive Dirac electrons”. Moldovan D, Masir MR, Covaci L, Peeters FM, Physical review : B : condensed matter and materials physics 86, 115431 (2012). http://doi.org/10.1103/PhysRevB.86.115431
Abstract: Electrons in graphene, in addition to their spin, have two pseudospin degrees of freedom: sublattice and valley pseudospin. Valleytronics uses the valley degree of freedom as a carrier of information similarly to the way spintronics uses electron spin. We show how a double-barrier structure consisting of electric and vector potentials can be used to filter massive Dirac electrons based on their valley index. We study the resonant transmission through a finite number of barriers and we obtain the energy spectrum of a superlattice consisting of electric and vector potentials. When a mass term is included, the energy bands and energy gaps at the K and K′ points are different and they can be tuned by changing the potential.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 55
DOI: 10.1103/PhysRevB.86.115431
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“Spin-orbit interaction controlled properties of two-dimensional superlattices”. Földi P, Szaszkó-Bogár V, Peeters FM, Physical review : B : condensed matter and materials physics 82, 115302 (2010). http://doi.org/10.1103/PhysRevB.82.115302
Abstract: The band structure of two-dimensional artificial superlattices in the presence of (Rashba-type) spin-orbit interaction (SOI) is presented. The position and shape of the energy bands in these spintronic crystals depend on the geometry as well as the strength of the SOI, which can be tuned by external gate voltages. For finite mesoscopic arrays, we show that their conductance properties and possible applications can be understood from these spin-dependent band diagrams.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 6
DOI: 10.1103/PhysRevB.82.115302
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“Stacking order dependent electric field tuning of the band gap in graphene multilayers”. Avetisyan AA, Partoens B, Peeters FM, Physical review : B : condensed matter and materials physics 81, 115432 (2010). http://doi.org/10.1103/PhysRevB.81.115432
Abstract: The effect of different stacking order of graphene multilayers on the electric field induced band gap is investigated. We considered a positively charged top and a negatively charged back gate in order to independently tune the band gap and the Fermi energy of three and four layer graphene systems. A tight-binding approach within a self-consistent Hartree approximation is used to calculate the induced charges on the different graphene layers. We found that the gap for trilayer graphene with the ABC stacking is much larger than the corresponding gap for the ABA trilayer. Also we predict that for four layers of graphene the energy gap strongly depends on the choice of stacking, and we found that the gap for the different types of stacking is much larger as compared to the case of Bernal stacking. Trigonal warping changes the size of the induced electronic gap by approximately 30% for intermediate and large values of the induced electron density.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 142
DOI: 10.1103/PhysRevB.81.115432
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“Stark effect on the exciton spectra of vertically coupled quantum dots: horizontal field orientation and nonaligned dots”. Szafran B, Peeters FM, Bednarek S, Physical review : B : condensed matter and materials physics 75, 115303 (2007). http://doi.org/10.1103/PhysRevB.75.115303
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 38
DOI: 10.1103/PhysRevB.75.115303
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“Tunable optical Aharonov-Bohm effect in a semiconductor quantum ring”. Li B, Peeters FM, Physical review : B : condensed matter and materials physics 83, 115448 (2011). http://doi.org/10.1103/PhysRevB.83.115448
Abstract: By applying an electric field perpendicular to a semiconductor quantum ring we show that it is possible to modify the single particle wave function between quantum dot (QD)-like and ring-like. The constraints on the geometrical parameters of the quantum ring to realize such a transition are derived. With such a perpendicular electric field we are able to tune the Aharanov-Bohm (AB) effect for both the single particle and for excitons. The tunability is in both the strength of the AB effect as well as in its periodicity. We also investigate the strain induce potential inside the self-assembled quantum ring and the effect of the strain on the AB effect.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 25
DOI: 10.1103/PhysRevB.83.115448
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“Wave-packet scattering on graphene edges in the presence of a pseudomagnetic field”. da Costa DR, Chaves A, Farias GA, Covaci L, Peeters FM, Physical review : B : condensed matter and materials physics 86, 115434 (2012). http://doi.org/10.1103/PhysRevB.86.115434
Abstract: The scattering of a Gaussian wave packet in armchair and zigzag graphene edges is theoretically investigated by numerically solving the time-dependent Schrodinger equation for the tight-binding model Hamiltonian. Our theory allows us to investigate scattering in reciprocal space, and depending on the type of graphene edge we observe scattering within the same valley, or between different valleys. In the presence of an external magnetic field, the well-known skipping orbits are observed. However, our results demonstrate that in the case of a pseudomagnetic field, induced by nonuniform strain, the scattering by an armchair edge results in a nonpropagating edge state.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 28
DOI: 10.1103/PhysRevB.86.115434
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“From spin-polarized interfaces to giant magnetoresistance in organic spin valves”. Çakir D, Otalvaro DM, Brocks G, Physical review : B : condensed matter and materials physics 89, 115407 (2014). http://doi.org/10.1103/PHYSREVB.89.115407
Abstract: We calculate the spin-polarized electronic transport through a molecular bilayer spin valve from first principles, and establish the link between the magnetoresistance and the spin-dependent interactions at the metal-molecule interfaces. The magnetoresistance of a Fe vertical bar bilayer-C-70 vertical bar Fe spin valve attains a high value of 70% in the linearresponse regime, but it drops sharply as a function of the applied bias. The current polarization has a value of 80% in linear response and also decreases as a function of bias. Both these trends can be modeled in terms of prominent spin-dependent Fe vertical bar C-70 interface states close to the Fermi level, unfolding the potential of spinterface science to control and optimize spin currents.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 14
DOI: 10.1103/PHYSREVB.89.115407
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“Appearance of enhanced Weiss oscillations in graphene: theory”. Matulis A, Peeters FM, Physical review : B : condensed matter and materials physics 75, 125429 (2007). http://doi.org/10.1103/PhysRevB.75.125429
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 65
DOI: 10.1103/PhysRevB.75.125429
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“Bound states and lifetime of an electron on a bulk helium surface”. Degani MH, Farias GA, Peeters FM, Physical review : B : condensed matter and materials physics 72, 125408 (2005). http://doi.org/10.1103/PhysRevB.72.125408
Abstract: We propose an effective potential for an excess electron near the helium liquid-vapor interface that takes into account the diffuseness of the liquid-vapor interface and the classical image potential. The splitting of the first two excited states of the excess electron bound to the helium liquid-vapor interface as a function of an external constant electric field applied perpendicular to the interface is in excellent agreement with recent experiments. The effect of a parallel magnetic field on the energy levels are calculated. Single-electron tunneling of the electron out of its surface state is studied as a function of the electric field applied to the system. We found that the tunneling time has a linear dependence on the electric field.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 11
DOI: 10.1103/PhysRevB.72.125408
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“Chiral states in bilayer graphene : magnetic field dependence and gap opening”. Zarenia M, Pereira JM, Farias GA, Peeters FM, Physical review : B : condensed matter and materials physics 84, 125451 (2011). http://doi.org/10.1103/PhysRevB.84.125451
Abstract: At the interface of electrostatic potential kink profiles, one-dimensional chiral states are found in bilayer graphene (BLG). Such structures can be created by applying an asymmetric potential to the upper and the lower layers of BLG. We found the following: (i) due to the strong confinement by the single kink profile, the unidirectional states are only weakly affected by a magnetic field; (ii) increasing the smoothness of the kink potential results in additional bound states, which are topologically different from those chiral states; and (iii) in the presence of a kink-antikink potential, the overlap between the oppositely moving chiral states results in the appearance of crossing and anticrossing points in the energy spectrum. This leads to the opening of tunable minigaps in the spectrum of the unidirectional topological states.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 50
DOI: 10.1103/PhysRevB.84.125451
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“Enhancement of Coulomb drag in double-layer graphene structures by plasmons and dielectric background inhomogeneity”. Badalyan SM, Peeters FM, Physical review : B : condensed matter and materials physics 86, 121405 (2012). http://doi.org/10.1103/PhysRevB.86.121405
Abstract: The drag of massless fermions in graphene double-layer structures is investigated over a wide range of temperatures and interlayer separations. We show that the inhomogeneity of the dielectric background in such graphene structures, for experimentally relevant parameters, results in a significant enhancement of the drag resistivity. At intermediate temperatures the dynamical screening via plasmon-mediated drag enhances the drag resistivity and results in an upturn in its behavior at large interlayer separations. In a range of interlayer separations, corresponding to the crossover from strong to weak coupling of graphene layers, we find that the decrease of the drag resistivity with interlayer spacing is approximately quadratic. This dependence weakens below this range of interlayer spacing while for larger separations we find a cubic (quartic) dependence at intermediate (low) temperatures.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 21
DOI: 10.1103/PhysRevB.86.121405
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“Excitonic Aharonov-Bohm effect : unstrained versus strained type-I semiconductor nanorings”. Tadić, M, Čukarić, N, Arsoski V, Peeters FM, Physical review : B : condensed matter and materials physics 84, 125307 (2011). http://doi.org/10.1103/PhysRevB.84.125307
Abstract: We study how mechanical strain affects the magnetic field dependence of the exciton states in type-I semiconductor nanorings. Strain spatially separates the electron and hole in (In,Ga)As/GaAs nanorings which is beneficial for the occurrence of the excitonic Aharonov-Bohm (AB) effect. In narrow strained (In,Ga)As/GaAs nanorings the AB oscillations in the exciton ground-state energy are due to anticrossings with the first excited state. No such AB oscillations are found in unstrained GaAs/(Al,Ga)As nanorings irrespective of the ring width. Our results are obtained within an exact numerical diagonalization scheme and are shown to be accurately described by a two-level model with off-diagonal coupling t. The later transfer integral expresses the Coulomb coupling between states of electron-hole pairs. We also found that the oscillator strength for exciton recombination in (In,Ga)As/GaAs nanorings exhibits AB oscillations, which are superimposed on a linear increase with magnetic field. Our results agree qualitatively with recent experiments on the excitonic Aharonov-Bohm effect in type-I (In,Ga)As/GaAs nanorings.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 13
DOI: 10.1103/PhysRevB.84.125307
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