|
|
“Microstructure and phase transitions in Pb(Sc0.5Ta0.5)O3”. Lemmens H, Richard O, Van Tendeloo G, Bismayer U, Journal of electron microscopy 48, 843 (1999). http://doi.org/10.1093/oxfordjournals.jmicro.a023756
Abstract: The microstructure and phase transitions in the perovskite-based ferroelectric lead scandium tantalate, Pb(Sc0.5Ta0.5)O-3 have been investigated by transmission electron microscopy. The effects of ordering of Sc and Ta cations are apparent in reciprocal space as well as in direct space images. High-resolution observations allow direct structure imaging of the domain structure. The structure of the low temperature ferroelectric phase is studied by selected area electron diffraction (SAED) and electron microdiffraction. The relaxer behaviour of this paraelectric-ferroelectric transition is displayed by diffuse intensities in the SAED patterns at temperatures around the Curie point.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 0.9
Times cited: 7
DOI: 10.1093/oxfordjournals.jmicro.a023756
|
|
|
|
“Modeling of ionization of argon in an analytical capacitively coupled radio-frequency glow discharge”. Bogaerts A, Yan M, Gijbels R, Goedheer W, Journal of applied physics 86, 2990 (1999). http://doi.org/10.1063/1.371159
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 2.068
Times cited: 18
DOI: 10.1063/1.371159
|
|
|
|
“A potential method to correlate electrical properties and microstructure of a unique high-Tc superconducting Josephson junction”. Verbist K, Lebedev OI, Van Tendeloo G, Tafuri F, Granozio FM, Di Chiara A, Bender H, Applied physics letters 74, 1024 (1999). http://doi.org/10.1063/1.123443
Abstract: A method to correlate microstructure from cross-section transmission electron microscopy (TEM) investigations and transport properties of a single well characterized high-T-c artificial grain boundary junction is reported. A YBa2Cu3O7-delta 45 degrees twist junction exhibiting the typical phenomenology of high T-c Josephson weak links was employed. The TEM sample preparation is based on focused ion beam etching and allows to easily localize the electron transparent area on a microbridge. The reported technique opens clear perspectives in the determination of the microstructural origin of variations in Josephson junction properties, such as the spread in I-c and IcRN values and the presence of different transport regimes in nominally identical junctions. (C) 1999 American Institute of Physics. [S0003-6951(99)03404-X].
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.411
Times cited: 5
DOI: 10.1063/1.123443
|
|
|
|
“Role of Ar2+ and Ar+2 ions in a direct current argon glow discharge: a numerical description”. Bogaerts A, Gijbels R, Journal of applied physics 86, 4124 (1999). http://doi.org/10.1063/1.371337
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 2.068
Times cited: 50
DOI: 10.1063/1.371337
|
|
|
|
“Determination of low-Z elements in individual environmental particles using windowless EPMA”. Ro C-U, Osán J, Van Grieken R, Analytical chemistry 71, 1521 (1999). http://doi.org/10.1021/AC981070F
Keywords: A1 Journal article; AXES (Antwerp X-ray Analysis, Electrochemistry and Speciation)
DOI: 10.1021/AC981070F
|
|
|
|
“Accurate infrared spectroscopy determination of interstitial and precipitated oxygen in highly doped Czochralski-grown silicon”. de Gryse O, Clauws P, Rossou L, van Landuyt J, Vanhellemont J, The review of scientific instruments 70, 3661 (1999). http://doi.org/10.1063/1.1149974
Abstract: A method has been developed to determine the interstitial and precipitated oxygen concentration in highly doped n- and p-type silicon. 10-30-mu m-thin silicon samples in a mechanical stress-free state and without alteration of the thermal history are prepared and measured with Fourier transform infrared spectroscopy at 5.5-6 K. The measured oxygen contents in the as-grown Si samples agree well with those obtained with gas fusion analysis. In the highly boron-doped samples, the interstitial oxygen can be determined down to 10(17) cm(-3). (C) 1999 American Institute of Physics. [S0034-6748(99)04909-6].
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.515
Times cited: 5
DOI: 10.1063/1.1149974
|
|
|
|
“Comparison between a radio-frequency and direct current glow discharge in argon by a hybrid Monte Carlo-fluid model for electrons, argon ions and fast argon atoms”. Bogaerts A, Gijbels R, Goedheer W, Spectrochimica acta: part B : atomic spectroscopy 54, 1335 (1999). http://doi.org/10.1016/S0584-8547(99)00080-4
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 3.241
Times cited: 11
DOI: 10.1016/S0584-8547(99)00080-4
|
|
