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1D fluid model for an rf methane plasma of interest in deposition of diamond-like carbon layers”. Herrebout D, Bogaerts A, Yan M, Goedheer W, Dekempeneer E, Gijbels R, Journal of applied physics 90, 570 (2001). http://doi.org/10.1063/1.1378059
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Asymmetric stark shifts in InGaAs/GaAs near-surface quantum wells: the image charge effect”. Chang K, Peeters FM, Journal of applied physics 88, 5246 (2000). http://doi.org/10.1063/1.1314905
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Collisional-radiative model for an argon glow discharge”. Bogaerts A, Gijbels R, Vlcek J, Journal of applied physics 84, 121 (1998). http://doi.org/10.1063/1.368009
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Description of the thermalization process of the sputtered atoms in a glow discharge using a 3-dimensional Monte Carlo method”. Bogaerts A, van Straaten M, Gijbels R, Journal of applied physics 77, 1868 (1995). http://doi.org/10.1063/1.358887
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Diffusive transport in the hybrid Hall effect device”. Reijniers J, Peeters FM, Journal of applied physics 87, 8088 (2000). http://doi.org/10.1063/1.373502
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Distribution of fields and charge carriers in cylindrical nanosize silicon-based metal-oxide-semiconductor structures”. Pokatilov EP, Fomin VM, Balaban SN, Gladilin VN, Klimin SN, Devreese JT, Magnus W, Schoenmaker W, Collaert N, van Rossum M, de Meyer K, Journal Of Applied Physics 85, 6625 (1999). http://doi.org/10.1063/1.370171
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Hybrid modeling of a capacitively coupled radio frequency glow discharge in argon: combined Monte Carlo and fluid model”. Bogaerts A, Gijbels R, Goedheer W, Japanese journal of applied physics 38, 4404 (1999). http://doi.org/10.1143/JJAP.38.4404
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Hybrid Monte Carlo-fluid model of a direct current glow discharge”. Bogaerts A, Gijbels R, Goedheer W, Journal of applied physics 78, 2233 (1995). http://doi.org/10.1063/1.360139
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Intersubband-coupling and screening effects on the electron transport in a quasi-two-dimensional δ-doped semiconductor system”. Hai G-Q, Studart N, Peeters FM, Koenraad PM, Wolter JH, Journal of applied physics 80, 5809 (1996). http://doi.org/10.1063/1.363573
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Laser ablation of Cu and plume expansion into 1 atm ambient gas”. Chen Z, Bogaerts A, Journal of applied physics 97, 063305 (2005). http://doi.org/10.1063/1.1863419
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Loss rate of a plasticizer in a nylon matrix calculated using macroscopic reaction-diffusion kinetics”. Zhang M-L, March NH, Peeters A, van Alsenoy C, Howard I, Lamoen D, Leys F, Journal Of Applied Physics 93, 1525 (2003). http://doi.org/10.1063/1.1535230
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Microstructural and physical properties of layered manganite oxides related to the magnetoresistive perovskites”. Laffez P, Van Tendeloo G, Seshadri R, Hervieu M, Martin C, Maignan A, Raveau B, Journal of applied physics 80, 5850 (1996). http://doi.org/10.1063/1.363578
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Numerical study of Ar/CF4/N2 discharges in single and dual frequency capacitively coupled plasma reactors”. Georgieva V, Bogaerts A, Gijbels R, Journal of applied physics 94, 3748 (2003). http://doi.org/10.1063/1.1603348
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Particle-in-cell Monte Carlo modeling of Langmuir probes in an Ar plasma”. Cenian A, Chernukho A, Bogaerts A, Gijbels R, Leys C, Journal of applied physics 97, 123310 (2005). http://doi.org/10.1063/1.1938275
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Particle-in-cell/Monte Carlo simulation of a capacitively coupled radio frequency Ar/Cf4 discharge: effect of gas composition”. Georgieva V, Bogaerts A, Gijbels R, Journal of applied physics 93, 2369 (2003). http://doi.org/10.1063/1.1542920
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Particle-in-cell/Monte Carlo simulations of a low-pressure capacitively coupled radio-frequency discharge: effect of adding H2 to an Ar discharge”. Neyts E, Yan M, Bogaerts A, Gijbels R, Journal of applied physics 93, 5025 (2003). http://doi.org/10.1063/1.1563820
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Quantum transport in a nanosize double-gate metal-oxide-semiconductor field-effect transistor”. Croitoru MD, Gladilin VN, Fomin VM, Devreese JT, Magnus W, Schoenmaker W, Sorée B, Journal of applied physics 96, 2305 (2004). http://doi.org/10.1063/1.1767619
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Quantum transport in a nanosize silicon-on-insulator metal-oxide-semiconductor field effect transistor”. Croitoru MD, Gladilin VN, Fomin VM, Devreese JT, Magnus W, Schoenmaker W, Sorée B, Journal of applied physics 93, 1230 (2003). http://doi.org/10.1063/1.1533108
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The role of fast argon ions and atoms in the ionization of argon in a direct current glow discharge: a mathematical simulation”. Bogaerts A, Gijbels R, Journal of applied physics 78, 6427 (1995). http://doi.org/10.1063/1.360526
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Role of the fast Ar atoms, Ar+ ions and metastable Ar atoms in a hollow cathode glow discharge: study by a hybrid model”. Baguer N, Bogaerts A, Gijbels R, Journal of applied physics 94, 2212 (2003). http://doi.org/10.1063/1.1594276
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Study of a hollow cathode glow discharge in He: Monte Carlo-fluid model combined with a transport model for the metastable atoms”. Baguer N, Bogaerts A, Gijbels R, Journal of applied physics 93, 47 (2003). http://doi.org/10.1063/1.1518784
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Study of the Ar metastable atom population in a hollow cathode discharge by means of a hybrid model and spectrometric measurements”. Baguer N, Bogaerts A, Donko Z, Gijbels R, Sadeghi N, Journal of applied physics 97, 123305 (2005). http://doi.org/10.1063/1.1929857
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Theoretical investigation of CoSi2/Si1-xGex detectors: influence of a Si tunneling barrier on the electro-optical characteristics”. Chu DP, Peeters FM, Kolodinski S, Roca E, Journal of applied physics 79, 1151 (1996)
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The importance of an external circuit in a particle-in-cell/Monte Carlo collisions model for a direct current planar magnetron”. Bultinck E, Kolev I, Bogaerts A, Depla D, Journal of applied physics 103, 013309 (2008). http://doi.org/10.1063/1.2828155
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In situ transmission electron microscopy study of Ni silicide phases formed on (001) Si active lines”. Teodorescu V, Nistor L, Bender H, Steegen A, Lauwers A, Maex K, van Landuyt J, Journal of applied physics 90, 167 (2001). http://doi.org/10.1063/1.1378812
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Unraveling the deposition mechanism in a-C:H thin-film growth: a molecular-dynamics study for the reaction behavior of C3 and C3H radicals with a-C:H surfaces”. Neyts E, Bogaerts A, van de Sanden MCM, Journal of applied physics 99, 014902 (2006). http://doi.org/10.1063/1.2150149
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Phonon-assisted tunneling in direct-bandgap semiconductors”. Mohammed M, Verhulst AS, Verreck D, Van de Put ML, Magnus W, Sorée B, Groeseneken G, Journal of applied physics 125, 015701 (2019). http://doi.org/10.1063/1.5044256
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Comparison of a one-dimensional particle-in-cell-Monte Carlo model and a one-dimensional fluid model for a CH4/H2 capacitively coupled radio frequency discharge”. Ivanov V, Proshina O, Rakhimova T, Rakhimov A, Herrebout D, Bogaerts A, Journal of applied physics 91, 6296 (2002). http://doi.org/10.1063/1.1461895
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The role of phase compatibility in martensite”. Salman OU, Finel A, Delville R, Schryvers D, Journal of applied physics T2 –, 22nd International Symposium on Integrated Functionalities (ISIF), JUN 13-16, 2010, San Juan, PR 111, 103517 (2012). http://doi.org/10.1063/1.4712629
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Strain and band edges in single and coupled cylindrical InAs/GaAs and InP/InGaP self-assembled quantum dots”. Tadić, M, Peeters FM, Janssens KL, Korkusinski M, Hawrylak P, Journal of applied physics 92, 5819 (2002). http://doi.org/10.1063/1.1510167
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