“Towards chirality control of graphene nanoribbons embedded in hexagonal boron nitride”. Wang HS, Chen L, Elibol K, He L, Wang H, Chen C, Jiang C, Li C, Wu T, Cong CX, Pennycook TJ, Argentero G, Zhang D, Watanabe K, Taniguchi T, Wei W, Yuan Q, Meyer JC, Xie X, Nature Materials , 1 (2020). http://doi.org/10.1038/S41563-020-00806-2
Abstract: Oriented trenches are created in h-BN using different catalysts, and used as templates to grow seamlessly integrated armchair and zigzag graphene nanoribbons with chirality-dependent electrical and magnetic conductance properties. The integrated in-plane growth of graphene nanoribbons (GNRs) and hexagonal boron nitride (h-BN) could provide a promising route to achieve integrated circuitry of atomic thickness. However, fabrication of edge-specific GNRs in the lattice of h-BN still remains a significant challenge. Here we developed a two-step growth method and successfully achieved sub-5-nm-wide zigzag and armchair GNRs embedded in h-BN. Further transport measurements reveal that the sub-7-nm-wide zigzag GNRs exhibit openings of the bandgap inversely proportional to their width, while narrow armchair GNRs exhibit some fluctuation in the bandgap-width relationship. An obvious conductance peak is observed in the transfer curves of 8- to 10-nm-wide zigzag GNRs, while it is absent in most armchair GNRs. Zigzag GNRs exhibit a small magnetic conductance, while armchair GNRs have much higher magnetic conductance values. This integrated lateral growth of edge-specific GNRs in h-BN provides a promising route to achieve intricate nanoscale circuits.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 41.2
Times cited: 3
DOI: 10.1038/S41563-020-00806-2
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“Isolating hydrogen in hexagonal boron nitride bubbles by a plasma treatment”. He L, Wang H, Chen L, Wang X, Xie H, Jiang C, Li C, Elibol K, Meyer J, Watanabe K, Taniguchi T, Wu Z, Wang W, Ni Z, Miao X, Zhang C, Zhang D, Wang H, Xie X, Nature communications 10, 2815 (2019). http://doi.org/10.1038/s41467-019-10660-9
Abstract: Atomically thin hexagonal boron nitride (h-BN) is often regarded as an elastic film that is impermeable to gases. The high stabilities in thermal and chemical properties allow h-BN to serve as a gas barrier under extreme conditions. Here, we demonstrate the isolation of hydrogen in bubbles of h-BN via plasma treatment. Detailed characterizations reveal that the substrates do not show chemical change after treatment. The bubbles are found to withstand thermal treatment in air, even at 800°C. Scanning transmission electron microscopy investigation shows that the h-BN multilayer has a unique aligned porous stacking nature, which is essential for the character of being transparent to atomic hydrogen but impermeable to hydrogen molecules. In addition, we successfully demonstrated the extraction of hydrogen gases from gaseous compounds or mixtures containing hydrogen element. The successful production of hydrogen bubbles on h-BN flakes has potential for further application in nano/ micro-electromechanical systems and hydrogen storage.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 12.124
Times cited: 8
DOI: 10.1038/s41467-019-10660-9
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“Boosting quantum yields in two-dimensional semiconductors via proximal metal plates”. Lee Y, Forte JD'arf S, Chaves A, Kumar A, Tran TT, Kim Y, Roy S, Taniguchi T, Watanabe K, Chernikov A, Jang JI, Low T, Kim J, Nature Communications 12, 7095 (2021). http://doi.org/10.1038/S41467-021-27418-X
Abstract: The short exciton lifetime and strong exciton-exciton interaction in transition metal dichalcogenides limit the efficiency of exciton emission. Here, the authors show that exciton-exciton interaction in monolayer WS2 can be screened using proximal metal plates, leading to an improved quantum yield. Monolayer transition metal dichalcogenides (1L-TMDs) have tremendous potential as atomically thin, direct bandgap semiconductors that can be used as convenient building blocks for quantum photonic devices. However, the short exciton lifetime due to the defect traps and the strong exciton-exciton interaction in TMDs has significantly limited the efficiency of exciton emission from this class of materials. Here, we show that exciton-exciton interaction in 1L-WS2 can be effectively screened using an ultra-flat Au film substrate separated by multilayers of hexagonal boron nitride. Under this geometry, induced dipolar exciton-exciton interaction becomes quadrupole-quadrupole interaction because of effective image dipoles formed within the metal. The suppressed exciton-exciton interaction leads to a significantly improved quantum yield by an order of magnitude, which is also accompanied by a reduction in the exciton-exciton annihilation (EEA) rate, as confirmed by time-resolved optical measurements. A theoretical model accounting for the screening of the dipole-dipole interaction is in a good agreement with the dependence of EEA on exciton densities. Our results suggest that fundamental EEA processes in the TMD can be engineered through proximal metallic screening, which represents a practical approach towards high-efficiency 2D light emitters.
Keywords: A1 Journal article; Engineering sciences. Technology; Condensed Matter Theory (CMT)
Impact Factor: 12.124
DOI: 10.1038/S41467-021-27418-X
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“Synergetic enhancement of quantum yield and exciton lifetime of monolayer WS₂, by proximal metal plate and negative electric bias”. Tran TT, Lee Y, Roy S, Tran TU, Kim Y, Taniguchi T, Watanabe K, Milošević, MV, Lim SC, Chaves A, Jang JI, Kim J, ACS nano 18, 220 (2023). http://doi.org/10.1021/ACSNANO.3C05667
Abstract: The efficiency of light emission is a critical performance factor for monolayer transition metal dichalcogenides (1L-TMDs) for photonic applications. While various methods have been studied to compensate for lattice defects to improve the quantum yield (QY) of 1L-TMDs, exciton-exciton annihilation (EEA) is still a major nonradiative decay channel for excitons at high exciton densities. Here, we demonstrate that the combined use of a proximal Au plate and a negative electric gate bias (NEGB) for 1L-WS2 provides a dramatic enhancement of the exciton lifetime at high exciton densities with the corresponding QY enhanced by 30 times and the EEA rate constant decreased by 80 times. The suppression of EEA by NEGB is attributed to the reduction of the defect-assisted EEA process, which we also explain with our theoretical model. Our results provide a synergetic solution to cope with EEA to realize high-intensity 2D light emitters using TMDs.
Keywords: A1 Journal article; Engineering sciences. Technology; Condensed Matter Theory (CMT)
Impact Factor: 17.1
DOI: 10.1021/ACSNANO.3C05667
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“Tuning a circular p-n junction in graphene from quantum confinement to optical guiding”. Jiang Y, Mao J, Moldovan D, Masir MR, Li G, Watanabe K, Taniguchi T, Peeters FM, Andrei EY, Nature nanotechnology 12, 1045 (2017). http://doi.org/10.1038/NNANO.2017.181
Abstract: <script type='text/javascript'>document.write(unpmarked('The photon-like propagation of the Dirac electrons in graphene, together with its record-high electronic mobility(1-3), can lead to applications based on ultrafast electronic response and low dissipation(4-6). However, the chiral nature of the charge carriers that is responsible for the high mobility also makes it difficult to control their motion and prevents electronic switching. Here, we show how to manipulate the charge carriers by using a circular p-n junction whose size can be continuously tuned from the nanometre to the micrometre scale(7,8). The junction size is controlled with a dual-gate device consisting of a planar back gate and a point-like top gate made by decorating a scanning tunnelling microscope tip with a gold nanowire. The nanometre-scale junction is defined by a deep potential well created by the tip-induced charge. It traps the Dirac electrons in quantum-confined states, which are the graphene equivalent of the atomic collapse states (ACSs) predicted to occur at supercritically charged nuclei(9-13). As the junction size increases, the transition to the optical regime is signalled by the emergence of whispering-gallery modes(14-16), similar to those observed at the perimeter of acoustic or optical resonators, and by the appearance of a Fabry-Perot interference pattern(17-20) for junctions close to a boundary.'));
Keywords: A1 Journal article; Engineering sciences. Technology; Condensed Matter Theory (CMT)
Impact Factor: 38.986
Times cited: 65
DOI: 10.1038/NNANO.2017.181
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“Realization of a tunable artificial atom at a supercritically charged vacancy in graphene”. Mao J, Jiang Y, Moldovan D, Li G, Watanabe K, Taniguchi T, Masir MR, Peeters FM, Andrei EY, Nature physics 12, 545 (2016). http://doi.org/10.1038/nphys3665
Abstract: Graphene’s remarkable electronic properties have fuelled the vision of a graphene-based platform for lighter, faster and smarter electronics and computing applications. One of the challenges is to devise ways to tailor graphene’s electronic properties and to control its charge carriers. Here we show that a single-atom vacancy in graphene can stably host a local charge and that this charge can be gradually built up by applying voltage pulses with the tip of a scanning tunnelling microscope. The response of the conduction electrons in graphene to the local charge is monitored with scanning tunnelling and Landau level spectroscopy, and compared to numerical simulations. As the charge is increased, its interaction with the conduction electrons undergoes a transition into a supercritical regime where itinerant electrons are trapped in a sequence of quasi-bound states which resemble an artificial atom. The quasi-bound electron states are detected by a strong enhancement of the density of states within a disc centred on the vacancy site which is surrounded by halo of hole states. We further show that the quasi-bound states at the vacancy site are gate tunable and that the trapping mechanism can be turned on and off, providing a mechanism to control and guide electrons in graphene.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 22.806
Times cited: 93
DOI: 10.1038/nphys3665
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“Composite super-moiré, lattices in double-aligned graphene heterostructures = Composite super-moire lattices in double-aligned graphene heterostructures”. Wang Z, Wang YB, Yin J, Tovari E, Yang Y, Lin L, Holwill M, Birkbeck J, Perello DJ, Xu S, Zultak J, Gorbachev RV, Kretinin AV, Taniguchi T, Watanabe K, Morozov SV, Andelkovic M, Milovanović, SP, Covaci L, Peeters FM, Mishchenko A, Geim AK, Novoselov KS, Fal'ko VI, Knothe A, Woods CR, Science Advances 5, eaay8897 (2019). http://doi.org/10.1126/SCIADV.AAY8897
Abstract: When two-dimensional (2D) atomic crystals are brought into close proximity to form a van der Waals heterostructure, neighbouring crystals may influence each other's properties. Of particular interest is when the two crystals closely match and a moire pattern forms, resulting in modified electronic and excitonic spectra, crystal reconstruction, and more. Thus, moire patterns are a viable tool for controlling the properties of 2D materials. However, the difference in periodicity of the two crystals limits the reconstruction and, thus, is a barrier to the low-energy regime. Here, we present a route to spectrum reconstruction at all energies. By using graphene which is aligned to two hexagonal boron nitride layers, one can make electrons scatter in the differential moire pattern which results in spectral changes at arbitrarily low energies. Further, we demonstrate that the strength of this potential relies crucially on the atomic reconstruction of graphene within the differential moire super cell.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT); Condensed Matter Theory (CMT)
Times cited: 71
DOI: 10.1126/SCIADV.AAY8897
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“Direct observation of layer-stacking and oriented wrinkles in multilayer hexagonal boron nitride”. Chen L, Elibol K, Cai H, Jiang C, Shi W, Chen C, Wang HS, Wang X, Mu X, Li C, Watanabe K, Taniguchi T, Guo Y, Meyer JC, Wang H, 2d Materials 8, 024001 (2021). http://doi.org/10.1088/2053-1583/ABD41E
Abstract: Hexagonal boron nitride (h-BN) has long been recognized as an ideal substrate for electronic devices due to its dangling-bond-free surface, insulating nature and thermal/chemical stability. These properties of the h-BN multilayer are mainly determined by its lattice structure. Therefore, to analyse the lattice structure and orientation of h-BN crystals becomes important. Here, the stacking order and wrinkles of h-BN are investigated by transmission electron microscopy. It is experimentally confirmed that the layers in the h-BN flakes are arranged in the AA ' stacking. The wrinkles in a form of threefold network throughout the h-BN crystal are oriented along the armchair direction, and their formation mechanism was further explored by molecular dynamics simulations. Our findings provide a deep insight about the microstructure of h-BN and shed light on the structural design/electronic modulations of two-dimensional crystals.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 6.937
DOI: 10.1088/2053-1583/ABD41E
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“Intra-zero-energy Landau level crossings in bilayer graphene at high electric fields”. Xiang F, Gupta A, Chaves A, Krix ZE, Watanabe K, Taniguchi T, Fuhrer MS, Peeters FM, Neilson D, Milošević, MV, Hamilton AR, Nano letters 23, 9683 (2023). http://doi.org/10.1021/ACS.NANOLETT.3C01456
Abstract: The highly tunable band structure of the zero-energy Landau level (zLL) of bilayer graphene makes it an ideal platform for engineering novel quantum states. However, the zero-energy Landau level at high electric fields has remained largely unexplored. Here we present magnetotransport measurements of bilayer graphene in high transverse electric fields. We observe previously undetected Landau level crossings at filling factors nu = -2, 1, and 3 at high electric fields. These crossings provide constraints for theoretical models of the zero-energy Landau level and show that the orbital, valley, and spin character of the quantum Hall states at high electric fields is very different from low electric fields. At high E, new transitions between states at nu = -2 with different orbital and spin polarization can be controlled by the gate bias, while the transitions between nu = 0 -> 1 and nu = 2 -> 3 show anomalous behavior.
Keywords: A1 Journal article; Engineering sciences. Technology; Condensed Matter Theory (CMT)
Impact Factor: 10.8
Times cited: 1
DOI: 10.1021/ACS.NANOLETT.3C01456
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“Tuning quantum nonlocal effects in graphene plasmonics”. Lundeberg MB, Gao Y, Asgari R, Tan C, Van Duppen B, Autore M, Alonso-Gonzalez P, Woessner A, Watanabe K, Taniguchi T, Hillenbrand R, Hone J, Polini M, Koppens FHL, Science 357, 187 (2017). http://doi.org/10.1126/SCIENCE.AAN2735
Abstract: The response of electron systems to electrodynamic fields that change rapidly in space is endowed by unique features, including an exquisite spatial nonlocality. This can reveal much about the materials' electronic structure that is invisible in standard probes that use gradually varying fields. Here, we use graphene plasmons, propagating at extremely slow velocities close to the electron Fermi velocity, to probe the nonlocal response of the graphene electron liquid. The near-field imaging experiments reveal a parameter-free match with the full quantum description of the massless Dirac electron gas, which involves three types of nonlocal quantum effects: single-particle velocity matching, interaction-enhanced Fermi velocity, and interaction-reduced compressibility. Our experimental approach can determine the full spatiotemporal response of an electron system.
Keywords: A1 Journal article; Engineering sciences. Technology; Condensed Matter Theory (CMT)
Impact Factor: 37.205
Times cited: 87
DOI: 10.1126/SCIENCE.AAN2735
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“Evidence of flat bands and correlated states in buckled graphene superlattices”. Mao J, Milovanović, SP, Andelkovic M, Lai X, Cao Y, Watanabe K, Taniguchi T, Covaci L, Peeters FM, Geim AK, Jiang Y, Andrei EY, Nature 584, 215 (2020). http://doi.org/10.1038/S41586-020-2567-3
Abstract: Two-dimensional atomic crystals can radically change their properties in response to external influences, such as substrate orientation or strain, forming materials with novel electronic structure(1-5). An example is the creation of weakly dispersive, 'flat' bands in bilayer graphene for certain 'magic' angles of twist between the orientations of the two layers(6). The quenched kinetic energy in these flat bands promotes electron-electron interactions and facilitates the emergence of strongly correlated phases, such as superconductivity and correlated insulators. However, the very accurate fine-tuning required to obtain the magic angle in twisted-bilayer graphene poses challenges to fabrication and scalability. Here we present an alternative route to creating flat bands that does not involve fine-tuning. Using scanning tunnelling microscopy and spectroscopy, together with numerical simulations, we demonstrate that graphene monolayers placed on an atomically flat substrate can be forced to undergo a buckling transition(7-9), resulting in a periodically modulated pseudo-magnetic field(10-14), which in turn creates a 'post-graphene' material with flat electronic bands. When we introduce the Fermi level into these flat bands using electrostatic doping, we observe a pseudogap-like depletion in the density of states, which signals the emergence of a correlated state(15-17). This buckling of two-dimensional crystals offers a strategy for creating other superlattice systems and, in particular, for exploring interaction phenomena characteristic of flat bands. Buckled monolayer graphene superlattices are found to provide an alternative to twisted bilayer graphene for the study of flat bands and correlated states in a carbon-based material.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT); Condensed Matter Theory (CMT)
Impact Factor: 64.8
Times cited: 109
DOI: 10.1038/S41586-020-2567-3
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