Record |
Author |
Li, H.; Bender, H.; Conard, T.; Maex, K.; Gutakovskii, A.; van Landuyt, J.; Froyen, L. |
Title |
Interaction of a Ti-capped Co thin film with Si3N4 |
Type |
A1 Journal article |
Year |
2000 |
Publication |
Applied physics letters |
Abbreviated Journal |
Appl Phys Lett |
Volume |
77 |
Issue ![sorted by Issue field, descending order (down)](img/sort_desc.gif) |
26 |
Pages |
4307-4309 |
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
Abstract |
The reaction of a Ti (8 nm) capped Co film (15 nm) with a Si3N4 layer (150 nm) is studied after rapid thermal annealing at 660 degreesC for 120 s in a N-2 ambient. X-ray photoelectron spectroscopy, transmission electron microscopy, electron energy-loss spectroscopy, and Auger electron spectroscopy are used to study the reaction products. Combining the results of the different analyses yields a layer stack consisting of: TiO2/TiO/unreacted Co/(Ti,Co)(2)N/Co2Si, followed by amorphous Si3N4. The reaction mechanisms are discussed. Conclusions concerning the risk for degradation of nitride spacers in advanced devices are drawn. (C) 2000 American Institute of Physics. [S0003-6951(00)05248-7]. |
Address |
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Corporate Author |
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Thesis |
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Publisher |
American Institute of Physics |
Place of Publication |
New York, N.Y. |
Editor |
|
Language |
|
Wos |
000166120500021 |
Publication Date |
2002-07-26 |
Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
|
ISSN |
0003-6951; |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
Impact Factor |
3.411 |
Times cited |
3 |
Open Access |
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Notes |
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Approved |
Most recent IF: 3.411; 2000 IF: 3.906 |
Call Number |
UA @ lucian @ c:irua:104225 |
Serial |
1683 |
Permanent link to this record |