toggle visibility
Search within Results:
Display Options:

Select All    Deselect All
List View
 |   | 
   print
  Author Title Year Publication Volume Times cited Additional Links Links
Goessens, C.; Schryvers, D.; van Landuyt, J.; Amelinckx, S.; Verbeeck, A.; de Keyzer, R. Characterization of crystal defects in mixed tabular silver halide grains by conventional transmission electron microscopy and X-ray diffractometry 1991 Journal of crystal growth 110 40 UA library record; WoS full record; WoS citing articles
Volkov, V.V.; van Landuyt, J.; Marushkin, K.M.; Gijbels, R.; Férauge, C.; Vasilyev, M.G.; Shelyakin, A.A.; Sokolovsky, A.A. Characterization of LPE grown InGaAsP/InP heterostructures: IR-LED at 1.66 μm used for the remote monitoring of methane gas 1997 Journal of crystal growth 173 4 UA library record; WoS full record; WoS citing articles
Goessens, C.; Schryvers, D.; van Landuyt, J.; de Keyzer, R. Electron microscopical investigation of tetrahedral-shaped AgBr microcrystals 1997 Journal of crystal growth 172 15 UA library record; WoS full record; WoS citing articles
Frangis, N.; Stoemenos, J.; van Landuyt, J.; Nejim, A.; Hemment, P.L.F. The formation of 3C-SiC in crystalline Si by carbon implantation at 9500C and annealing: a structural study 1997 Journal of crystal growth 181 9 UA library record; WoS full record; WoS citing articles
Frangis, N.; van Landuyt, J.; Kaltsas, G.; Travlos, A.; Nassiopoulos, A.G. Growth of erbium-silicide films on (100) silicon as characterised by electron microscopy and diffraction 1997 Journal of crystal growth 172 29 UA library record; WoS full record; WoS citing articles
Bernaerts, D.; Amelinckx, S.; Van Tendeloo, G.; van Landuyt, J. Microstructure and formation mechanisms of cylindrical and conical scrolls of the misfit layer compounds PbNbnS2n+1 1997 Journal of crystal growth 172 23 UA library record; WoS full record; WoS citing articles
Teodorescu, V.; Nistor, L.; Bender, H.; Steegen, A.; Lauwers, A.; Maex, K.; van Landuyt, J. In situ transmission electron microscopy study of Ni silicide phases formed on (001) Si active lines 2001 Journal of applied physics 90 97 UA library record; WoS full record; WoS citing articles pdf doi
Ignatova, V.A.; Lebedev, O.I.; Watjen, U.; van Vaeck, L.; van Landuyt, J.; Gijbels, R.; Adams, F. Metal and composite nanocluster precipitate formation in silicon dioxide implanted with Sb+ ions 2002 Journal of applied physics 92 5 UA library record; WoS full record; WoS citing articles pdf doi
Gryse, O.D.; Clauws, P.; van Landuyt, J.; Lebedev, O.; Claeys, C.; Simoen, E.; Vanhellemont, J. Oxide phase determination in silicon using infrared spectroscopy and transmission electron microscopy techniques 2002 Journal of applied physics 91 27 UA library record; WoS full record; WoS citing articles pdf doi
de Gryse, O.; Clauws, P.; Vanhellemont, J.; Lebedev, O.I.; van Landuyt, J.; Simoen, E.; Claeys, C. Characterization of oxide precipitates in heavily B-doped silicon by infrared spectroscopy 2004 Journal of the electrochemical society 151 13 UA library record; WoS full record; WoS citing articles pdf doi
Stuer, C.; van Landuyt, J.; Bender, H.; de Wolf, I.; Rooyackers, R.; Badenes, G. Investigation by convergent beam electron diffraction of the stress around shallow trench isolation structures 2001 Journal of the electrochemical society 148 13 UA library record; WoS full record; WoS citing articles pdf doi
Ivanov, V.; Nagy, J.B.; Lambin, P.; Lucas, A.; Zhang, X.B.; Zhang, X.F.; Bernaerts, D.; Van Tendeloo, G.; Amelinckx, S.; van Landuyt, J. The study of carbon nanotubules produced by catalytic method 1994 Chemical physics letters 223 405 UA library record; WoS full record; WoS citing articles pdf doi
Ivanov, V.; Nagy, J.B.; Lambin, P.; Lucas, A.; Zhang, X.B.; Zhang, X.F.; Bernaerts, D.; Van Tendeloo, G.; Amelinckx, S.; van Landuyt, J. The study of carbon nanotubes produced by catalytic method 1994 Chemical physics letters 223 405 UA library record; WoS full record; WoS citing articles
Nistor, L.; Bender, H.; Vantomme, A.; Wu, M.F.; van Landuyt, J.; O'Donnell, K.P.; Martin, R.; Jacobs, K.; Moerman, I. Direct evidence of spontaneous quantum dot formation in a thick InGaN epilayer 2000 Applied physics letters 77 44 UA library record; WoS full record; WoS citing articles pdf doi
Frangis, N.; van Landuyt, J.; Lartiprete, R.; Martelli, S.; Borsella, E.; Chiussi, S.; Castro, J.; Leon, B. High resolution electron microscopy and X-ray photoelectron spectroscopy studies of heteroepitaxial SixGe1-x alloys produced through laser induced processing 1998 Applied physics letters 72 16 UA library record; WoS full record; WoS citing articles pdf doi
Cloetens, P.; Ludwig, W.; Baruchel, J.; van Dyck, D.; van Landuyt, J.; Guigay, J.P.; Schlenker, M. Holotomography: quantitative phase tomography with micrometer resolution using hard synchrotron radiation X-rays 1999 Applied physics letters 75 481 UA library record; WoS full record; WoS citing articles pdf doi
Dobbelaere, W.; de Boeck, J.; Heremans, P.; Mertens, R.; Borghs, G.; Luyten, W.; van Landuyt, J. InAs p-n diodes grown on GaAs and GaAs-coated Si by molecular beam epitaxy 1992 Applied physics letters 60 20 UA library record; WoS full record; WoS citing articles pdf doi
Dobbelaere, W.; de Boeck, J.; Heremans, P.; Mertens, R.; Borghs, G.; Luyten, W.; van Landuyt, J. InAs0.85Sb0.15 infrared photodiodes grown on GaAs and GaAs-coated Si by molecular beam epitaxy 1992 Applied physics letters 600 32 UA library record; WoS full record; WoS citing articles pdf doi
Li, H.; Bender, H.; Conard, T.; Maex, K.; Gutakovskii, A.; van Landuyt, J.; Froyen, L. Interaction of a Ti-capped Co thin film with Si3N4 2000 Applied physics letters 77 3 UA library record; WoS full record; WoS citing articles pdf doi
Fang, P.a.; Gu, H.; Wang, P.l.; Van Landuyt, J.; Vleugels, J.; Van der Biest, O.; Effect of powder coating on stabilizer distribution in CeO2-stabilized ZrO2 ceramics 2005 Journal of the American Ceramic Society 88 11 UA library record; WoS full record; WoS citing articles doi
Van Renterghem, W.; Schryvers, D.; van Landuyt, J.; Bollen, D.; Van Roost, C.; De Keyzer, R.B. Defect induced thickness growth in silver chloride (111) tabular crystals: a TEM study 2000 UA library record; WoS full record;
Van Renterghem, W.; Karthauser, S.; Schryvers, D.; van Landuyt, J.; De Keyzer, R.; Van Roost, C. The influence of the precipitation method on defect formation in multishell AgBrI (111) tabular crystals 2000 UA library record; WoS full record;
Hens, S.; Bender, H.; Donaton, R.A.; Maex, K.; Vanhaelemeersch, S.; van Landuyt, J. EFTEM study of plasma etched low-k Si-O-C dielectrics 2001 Institute of physics conference series T2 – Royal-Microscopical-Society Conference on Microscopy of Semiconducting, Materials, MAR 25-29, 2001, UNIV OXFORD, OXFORD, ENGLAND UA library record; WoS full record;
Stuer, C.; Steegen, A.; van Landuyt, J.; Bender, H.; Maex, K. Characterisation of the local stress induced by shallow trench isolation and CoSi2 silicidation 2001 Institute of physics conference series UA library record; WoS full record;
Nistor, L.; Bender, H.; van Landuyt, J.; Nemeth, S.; Boeve, H.; De Boeck, J.; Borghs, G. HREM investigation of a Fe/GaN/Fe tunnel junction 2001 Institute of physics conference series T2 – Royal-Microscopical-Society Conference on Microscopy of Semiconducting, Materials, MAR 25-29, 2001, Univ of Oxford, Oxford, England UA library record; WoS full record;
Fedina, L.; Gutakovskii, A.; Aseev, A.; van Landuyt, J.; Vanhellemont, J. Clustering of vacancies on {113} planes in Si layers close to Si-Si3N4 interfaces and further aggregation of self-interstitials inside vacancy clusters during electron irradiation 1999 Institute of physics conference series T2 – Conference on Microscopy of Semiconducting Materials, MAR 22-25, 1999, UNIV OXFORD, OXFORD, ENGLAND UA library record; WoS full record;
Rembeza, S.I.; Loginov, V.A.; Svistova, T.V.; Podkopaeva, O.I.; Rembeza, E.S.; van Landuyt, J. Laser thermotreatment of the SnO2layers 1998 Eurosensors XII, vols 1 and 2 UA library record; WoS full record;
Tokei, Z.; Lanckmans, F.; van den Bosch, G.; Van Hove, M.; Maex, K.; Bender, H.; Hens, S.; van Landuyt, J. Reliability of copper dual damascene influenced by pre-clean 2002 Analysis Of Integrated Circuits 5 UA library record; WoS full record; WoS citing articles doi
Schryvers, D.; Van Landuyt, J. Electron microscopy study of twin sequences and branching in NissAl34 3R martensite 1992 ICOMAT pdf
Goessens, C.; Schryvers, D.; van Landuyt, J.; Amelinckx, S.; Geuens, I.; Gijbels, R.; Jacob, W.; Verbeeck, A.; de Keyzer, R. Characterization of crystal defects and analysis of iodide distribution in mixed tabular silver halide grains by conventional transmission electron microscopy, X-ray diffractometry and back-scattered electron imaging 1991 UA library record
Select All    Deselect All
List View
 |   | 
   print

Save Citations:
Export Records: