Number of records found: 70
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Citations
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Do ICP-MS based methods fulfill the EU monitoring requirements for the determination of elements in our environment?”.Tirez K, Vanhoof C, Bronders J, Seuntjens P, Bleux N, Berghmans P, De Brucker N, Vanhaecke F, Environmental science : processes &, impacts 17, 2034 (2015). http://doi.org/10.1039/C5EM00289C
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Urban soil exploration through multi-receiver electromagnetic induction and stepped-frequency ground penetrating radar”. Van de Vijver E, Van Meirvenne M, Vandenhaute L, Delefortrie S, De Smedt P, Saey T, Seuntjens P, Environmental science : processes &, impacts 17, 1271 (2015). http://doi.org/10.1039/C5EM00023H
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Use of online water quality monitoring for assessing the effects of WWTP overflows in rivers”. Boënne W, Desmet N, Van Looy S, Seuntjens P, Environmental science : processes &, impacts 16, 1510 (2014). http://doi.org/10.1039/C3EM00449J
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The impact of local hydrodynamics on high-rate activated sludge flocculation in laboratory and full-scale reactors”. Balemans S, Vlaeminck SE, Torfs E, Hartog L, Zaharova L, Rehman U, Nopens I, Processes 8, 131 (2020). http://doi.org/10.3390/PR8020131
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Modeling and tackling resistivity scaling in metal nanowires”. Moors K, Sorée B, Magnus W, International Conference on Simulation of Semiconductor Processes and Devices : [proceedings] T2 –, International Conference on Simulation of Semiconductor Processes and, Devices (SISPAD), SEP 09-11, 2015, Washington, DC , 222 (2015)
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Carrier transport in a two-dimensional topological insulator nanoribbon in the presence of vacancy defects”. Tiwari S, Van de Put ML, Sorée B, Vandenberghe WG, International Conference on Simulation of Semiconductor Processes and Devices : [proceedings] T2 –, International Conference on Simulation of Semiconductor Processes and, Devices (SISPAD), SEP 24-26, 2018, Austin, TX , 92 (2018). http://doi.org/10.1109/SISPAD.2018.8551720
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Ab initio modeling of few-layer dilute magnetic semiconductors”. Tiwari S, Van de Put ML, Sorée B, Vandenberghe WG, International Conference on Simulation of Semiconductor Processes and Devices : [proceedings] T2 –, International Conference on Simulation of Semiconductor Processes and, Devices (SISPAD), SEP 27-29, 2021, Dallas, TX , 141 (2021). http://doi.org/10.1109/SISPAD54002.2021.9592535
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Self-consistent 30-band simulation approach for (non-)uniformly strained confined heterostructure tunnel field-effect transistors”. Verreck D, Verhulst AS, Van de Put ML, Sorée B, Magnus W, Collaert N, Mocuta A, Groeseneken G, Simulation of Semiconductor Processes and, Devices (SISPAD)AND DEVICES (SISPAD 2017) , 29 (2017)
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Ab-initio study of magnetically intercalated Tungsten diselenide”. Reyntjens PD, Tiwari S, Van de Put ML, Sorée B, Vandenberghe WG, International Conference on Simulation of Semiconductor Processes and Devices : [proceedings] T2 –, International Conference on Simulation of Semiconductor Processes and, Devices (SISPAD), SEP 23-OCT 06, 2020 , 97 (2020). http://doi.org/10.23919/SISPAD49475.2020.9241592
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Quantum transport study of contact resistance of edge- and top-contacted two-dimensional materials”. Deylgat E, Chen E, Sorée B, Vandenberghe WG, International Conference on Simulation of Semiconductor Processes and Devices : [proceedings] T2 –, International Conference on Simulation of Semiconductor Processes and, Devices (SISPAD), SEP 27-29, 2023, Kobe, Japan , 45 (2023). http://doi.org/10.23919/SISPAD57422.2023.10319537
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