Number of records found: 8874
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Thermal recrystallization of short-range ordered WS2 films”. Heyne MH, de Marneffe J-F, Radu I, Neyts EC, De Gendt S, Journal of vacuum science and technology: A: vacuum surfaces and films 36, 05g501 (2018). http://doi.org/10.1116/1.5036654
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Corrosion protection of Cu by atomic layer deposition”. Cremers V, Rampelberg G, Baert K, Abrahami S, Claes N, de Oliveira TM, Terryn H, Bals S, Dendooven J, Detavernier C, Journal of vacuum science and technology: A: vacuum surfaces and films 37, 060902 (2019). http://doi.org/10.1116/1.5116136
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Controllable nitrogen doping in as deposited TiO2 film and its effect on post deposition annealing”. Deng S, Verbruggen SW, Lenaerts S, Martens JA, Van den Berghe S, Devloo-Casier K, Devulder W, Dendoover J, Deduytsche D, Detavernier C, Journal of vacuum science and technology: A: vacuum surfaces and films 32, 01a123 (2014). http://doi.org/10.1116/1.4847976
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Addition of yttrium into HfO2 films: microstructure and electrical properties”. Dubourdieu C, Rauwel E, Roussel H, Ducroquet F, Hollaender B, Rossell M, Van Tendeloo G, Lhostis S, Rushworth S, Journal of vacuum science and technology: A: vacuum surfaces and films 27, 503 (2009). http://doi.org/10.1116/1.3106627
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Crystalline structure of very hard tungsten carbide thin films obtained by reactive pulsed laser deposition”. Mihailescu IN, Gyorgy E, Marin G, Popescu M, Teodorescu VS, van Landuyt J, Grivas C, Hatziapostolou A, Journal of vacuum science and technology: A: vacuum surfaces and films 17, 249 (1999). http://doi.org/10.1116/1.581579
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Influence of sticking coefficients on the behavior of sputtered atoms in an argon glow discharge: modeling and comparison with experiment”. Bogaerts A, Naylor J, Hatcher M, Jones WJ, Mason R, Journal of vacuum science and technology: A: vacuum surfaces and films 16, 2400 (1998). http://doi.org/10.1116/1.581359
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Modeling of the target surface modification by reactive ion implantation during magnetron sputtering”. Depla D, Chen ZY, Bogaerts A, Ignatova V, de Gryse R, Gijbels R, Journal of vacuum science and technology: A: vacuum surfaces and films 22, 1524 (2004). http://doi.org/10.1116/1.1705641
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Reaction mechanisms for atomic layer deposition of aluminum oxide on semiconductor substrates”. Delabie A, Sioncke S, Rip J, Van Elshocht S, Pourtois G, Mueller M, Beckhoff B, Pierloot K, Journal of vacuum science and technology: A: vacuum surfaces and films 30, 01a127 (2012). http://doi.org/10.1116/1.3664090
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Electromagnetic effects in high-frequency large-area capacitive discharges : a review”. Liu Y-X, Zhang Y-R, Bogaerts A, Wang Y-N, Journal of vacuum science and technology: A: vacuum surfaces and films 33, 020801 (2015). http://doi.org/10.1116/1.4907926
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Fluid simulation of the bias effect in inductive/capacitive discharges”. Zhang Y-R, Gao F, Li X-C, Bogaerts A, Wang Y-N, Journal of vacuum science and technology: A: vacuum surfaces and films 33, 061303 (2015). http://doi.org/10.1116/1.4928033
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Modeling and experimental investigation of the plasma uniformity in CF4/O2 capacitively coupled plasmas, operating in single frequency and dual frequency regime”. Zhang Y-R, Tinck S, De Schepper P, Wang Y-N, Bogaerts A, Journal of vacuum science and technology: A: vacuum surfaces and films 33, 021310 (2015). http://doi.org/10.1116/1.4906819
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Comparison of As- and P-based metamorphic buffers for high performance InP heterojunction bipolar transistor and high electron mobility transistor applications”. Lubyshev D, Fastenau JM, Fang X-M, Wu Y, Doss C, Snyder A, Liu WK, Lamb MSM, Bals S, Song C, Journal of vacuum science &, technology. B. Microelectronics and nanometer structures. Processing, measurement and phenomena 22, 1565 (2004). http://doi.org/10.1116/1.1691412
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High precision determination of the elastic strain of InGaN/GaN multiple quantum wells”. Wu MF, Zhou S, Yao S, Zhao Q, Vantomme A, van Daele B, Piscopiello E, Van Tendeloo G, Tong YZ, Yang ZJ, Yu TJ, Zhang GY, Journal of vacuum science and technology: B: microelectronics and nanometer structures 22, 920 (2004). http://doi.org/10.1116/1.1715085
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Innovative market-based policy instruments for waste management : a case study on shredder residues in Belgium”. Dubois M, Hoogmartens R, Van Passel S, Van Acker K, Vanderreydt I, Waste Management &, Research 33, 886 (2015). http://doi.org/10.1177/0734242X15600053
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Purple phototrophic bacteria for resource recovery : challenges and opportunities”. Capson-Tojo G, Batstone DJ, Grassino M, Vlaeminck SE, Puyol D, Verstraete W, Kleerebezem R, Oehmen A, Ghimire A, Pikaar I, Lema JM, Hülsen T, Grassino M, Hulsen T, Biotechnology Advances 43, 107567 (2020). http://doi.org/10.1016/J.BIOTECHADV.2020.107567
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The extracellular matrix protein 1: its molecular interaction and implication in tumor progression”. Sercu S, Zhang L, Merregaert J, Cancer investigation 26, 375 (2008). http://doi.org/10.1080/07357900701788148
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Intrinsic tailing of resistive states distributions in amorphous <tex>HfOx </tex>, and TaOx based resistive random access memories”. Clima S, Chen YY, Fantini A, Goux L, Degraeve R, Govoreanu B, Pourtois G, Jurczak M, IEEE electron device letters 36, 769 (2015). http://doi.org/10.1109/LED.2015.2448731
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Uniform strain in heterostructure tunnel field-effect transistors”. Verreck D, Verhulst AS, Van de Put ML, Sorée B, Collaert N, Mocuta A, Thean A, Groeseneken G, IEEE electron device letters 37, 337 (2016). http://doi.org/10.1109/LED.2016.2519681
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Modeling of edge scattering in graphene interconnects”. Contino A, Ciofi I, Wu X, Asselberghs I, Celano U, Wilson CJ, Tokei Z, Groeseneken G, Sorée B, IEEE electron device letters 39, 1085 (2018). http://doi.org/10.1109/LED.2018.2833633
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Large variation in temperature dependence of band-to-band tunneling current in tunnel devices”. Bizindavyi J, Verhulst AS, Verreck D, Sorée B, Groeseneken G, IEEE electron device letters 40, 1864 (2019). http://doi.org/10.1109/LED.2019.2939668
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Determination of ultimate leakage through rutile TiO2 and tetragonal ZrO2 from ab initio complex band calculations”. Clima S, Kaczer B, Govoreanu B, Popovici M, Swerts J, Verhulst AS, Jurczak M, De Gendt S, Pourtois G, IEEE electron device letters 34, 402 (2013). http://doi.org/10.1109/LED.2013.2238885
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Superior reliability of junctionless pFinFETs by reduced oxide electric field”. Toledano-Luque M, Matagne P, Sibaja-Hernandez A, Chiarella T, Ragnarsson L-A, Sorée B, Cho M, Mocuta A, Thean A, IEEE electron device letters 35, 1179 (2014). http://doi.org/10.1109/LED.2014.2361769
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Temperature-dependent modeling and characterization of through-silicon via capacitance”. Katti G, Stucchi M, Velenis D, Sorée B, de Meyer K, Dehaene W, IEEE electron device letters 32, 563 (2011). http://doi.org/10.1109/LED.2011.2109052
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Numerical simulation of hydrocarbon plasmas for nanoparticle formation and the growth of nanostructured thin films”. Neyts E, Eckert M, Mao M, Bogaerts A, Plasma physics and controlled fusion 51, 124034 (2009). http://doi.org/10.1088/0741-3335/51/12/124034
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A framework to account for sedimentation and diffusion in particle-cell interactions”. Cui J, Faria M, Bjornmalm M, Ju Y, Suma T, Gunawan ST, Richardson JJ, Heidar H, Bals S, Crampin EJ, Caruso F, Langmuir: the ACS journal of surfaces and colloids 32, 12394 (2016). http://doi.org/10.1021/ACS.LANGMUIR.6B01634
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Exchange of fluorinated cyanine dyes between different types of silver halide microcrystals studied by imaging time-of-flight secondary ion mass spectrometry”. Lenaerts J, Verlinden G, van Vaeck L, Gijbels R, Geuens I, Callant P, Langmuir 17, 7332 (2001). http://doi.org/10.1021/la010862t
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Highly Efficient Hyperbranched CNT Surfactants: Influence of Molar Mass and Functionalization”. Bertels E, Bruyninckx K, Kurttepeli, Smet M, Bals S, Goderis B, Langmuir: the ACS journal of surfaces and colloids 30, 12200 (2014). http://doi.org/10.1021/la503032g
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Immersion calorimetry as a tool to evaluate the catalytic performance of titanosilicate materials in the epoxidation of cyclohexene”. Vernimmen J, Guidotti M, Silvestre-Albero J, Jardim EO, Mertens M, Lebedev OI, Van Tendeloo G, Psaro R, Rodríguez-Reinoso F, Meynen V, Cool P, Langmuir: the ACS journal of surfaces and colloids 27, 3618 (2011). http://doi.org/10.1021/la104808v
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Structural characterization of colloidal Ag2Se nanocrystals”. Buschmann V, Van Tendeloo G, Langmuir 14, 1528 (1998). http://doi.org/10.1021/la9713210
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Structural ordering of self-assembled clusters with competing interactions : transition from faceted to spherical clusters”. Galvan Moya JE, Nelissen K, Peeters FM, Langmuir: the ACS journal of surfaces and colloids 31, 917 (2015). http://doi.org/10.1021/la504249e
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