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Author |
Conings, B.; Babayigit, A.; Klug, M.; Bai, S.; Gauquelin, N.; Sakai, N.; Wang, J.T.-W.; Verbeeck, J.; Boyen, H.-G.; Snaith, H. |
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Title |
Getting rid of anti-solvents: gas quenching for high performance perovskite solar cells |
Type |
P1 Proceeding |
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Year |
2018 |
Publication |
2018 Ieee 7th World Conference On Photovoltaic Energy Conversion (wcpec)(a Joint Conference Of 45th Ieee Pvsc, 28th Pvsec & 34th Eu Pvsec) |
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Keywords |
P1 Proceeding; Engineering sciences. Technology; Electron microscopy for materials research (EMAT) |
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Abstract |
As the field of perovskite optoelectronics developed, a plethora of strategies has arisen to control their electronic and morphological characteristics for the purpose of producing high efficiency devices. Unfortunately, despite this wealth of deposition approaches, the community experiences a great deal of irreproducibility between different laboratories, batches and preparation methods. Aiming to address this issue, we developed a simple deposition method based on gas quenching that yields smooth films for a wide range of perovskite compositions, in single, double, triple and quadruple cation varieties, and produces planar heterojunction devices with competitive efficiencies, so far up to 20%. |
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Wos |
000469200401163 |
Publication Date |
2018-12-08 |
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ISSN  |
978-1-5386-8529-7 |
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UA library record; WoS full record; WoS citing articles |
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Most recent IF: NA |
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Call Number |
UA @ admin @ c:irua:160468 |
Serial |
5365 |
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Author |
Pourtois, G.; Dabral, A.; Sankaran, K.; Magnus, W.; Yu, H.; de de Meux, A.J.; Lu, A.K.A.; Clima, S.; Stokbro, K.; Schaekers, M.; Houssa, M.; Collaert, N.; Horiguchi, N. |
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Title |
Probing the intrinsic limitations of the contact resistance of metal/semiconductor interfaces through atomistic simulations |
Type |
P1 Proceeding |
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Year |
2017 |
Publication |
Semiconductors, Dielectrics, And Metals For Nanoelectronics 15: In Memory Of Samares Kar |
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Pages |
303-311 |
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Keywords |
P1 Proceeding; Engineering sciences. Technology; Condensed Matter Theory (CMT); Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT) |
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Abstract |
In this contribution, we report a fundamental study of the factors that set the contact resistivity between metals and highly doped semiconductors. We investigate the case of n-type doped Si contacted with amorphous TiSi combining first-principles calculations with Non-Equilibrium Green functions transport simulations. The intrinsic contact resistivity is found to saturate at similar to 2x10(-10) Omega.cm(2) with the doping concentration and sets an intrinsic limit to the ultimate contact resistance achievable for n-doped Si vertical bar amorphous-TiSi. This limit arises from the intrinsic properties of the semiconductor and of the metal such as their electron effective masses and Fermi energies. We illustrate that, in this regime, contacting metals with a heavy electron effective mass helps reducing the interface intrinsic contact resistivity. |
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Publisher |
Electrochemical soc inc |
Place of Publication |
Pennington |
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Wos |
000426271800028 |
Publication Date |
2017-10-17 |
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Series Volume |
80 |
Series Issue |
1 |
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ISSN |
978-1-62332-470-4; 978-1-60768-818-1 |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Times cited |
1 |
Open Access |
Not_Open_Access |
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; ; |
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Most recent IF: NA |
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Call Number |
UA @ lucian @ c:irua:149966 |
Serial |
4976 |
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Author |
Storme, P.; Selucká, A.; Rapouch, K.; Mazík, M.; Vanmeert, F.; Janssens, K.; Van de Voorde, L.; Vekemans, B.; Vincze, L.; Caen, J.; De Wael, K. |
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Title |
Composition and corrosion forms on archaeological and non-archaeological historic printing letters from the Moravian Museum, Memorial of Kralice Bible, the Czech Republic and the Museum Plantin-Moretus Antwerp, Belgium |
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P1 Proceeding |
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Year |
2015 |
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59-65 |
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Keywords |
P1 Proceeding; Engineering sciences. Technology; AXES (Antwerp X-ray Analysis, Electrochemistry and Speciation); Antwerp Cultural Heritage Sciences (ARCHES) |
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ISSN |
978-2-87522-152-0; 0770-8505 |
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Additional Links |
UA library record |
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Open Access |
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Notes |
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Approved |
Most recent IF: NA |
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Call Number |
UA @ admin @ c:irua:126909 |
Serial |
5535 |
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Author |
Belov, I.; Paulussen, S.; Bogaerts, A. |
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Title |
Analysis and comparison of the co2 and co dielectric barrier discharge solid products |
Type |
P1 Proceeding |
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Year |
2016 |
Publication |
Hakone Xv: International Symposium On High Pressure Low Temperature Plasma Chemistry: With Joint Cost Td1208 Workshop: Non-equilibrium Plasmas With Liquids For Water And Surface Treatment |
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Keywords |
P1 Proceeding; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT) |
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Abstract |
The CO and CO2 Dielectric Barrier Discharges (DBD) and their solid products were analyzed keeping similar energy input regimes. Gas chromatography analysis revealed the presence of CO2, CO and O-2 mixture in the exhaust of the CO2 DBD, while no O-2 was found when CO was used as a feed gas. It was shown that the C-2 Swan lines observed with optical emission spectroscopy were distinct in the CO plasma while they were not observed in the CO2 emission spectrum. Also the solid products of the plasmas exhibited remarkable differences. Nanoparticles with a diameter between10 and 300 nm, composed of Fe, O and C (Fe: O: C similar to 13: 50: 30) were produced by the CO2 DBD, while microscopic dendrite-like carbon structure (C: O similar to 73: 27) were formed in the CO plasma. The growth rate in the CO2 and CO DBDs was evaluated to be on the level of 0.15 mg/min and 15 mg/min, respectively. The difference of the CO and CO2 discharges and their products might be attributed to the oxygen content in the latter (6.4 mol.% O-2 in the exhaust) and subsequent etching of the carbonaceous film. |
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Publisher |
Masarykova univ |
Place of Publication |
Brno |
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Publication Date |
0000-00-00 |
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Edition |
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ISSN |
978-80-210-8318-9 |
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Additional Links |
UA library record; WoS full record |
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Open Access |
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Most recent IF: NA |
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Call Number |
UA @ lucian @ c:irua:141554 |
Serial |
4516 |
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