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“Structural characterization of Nb-TiO2 nanosized thick-films for gas sensing application”. Ferroni M, Carotta MC, Guidi V, Martinelli G, Ronconi F, Richard O, van Dyck D, van Landuyt J, Sensors and actuators : B : chemical 68, 140 (2000). http://doi.org/10.1016/S0925-4005(00)00474-3
Abstract: Pure and Nb-doped TiO2 thick-films were prepared by screen-printing, starting from nanosized powders. Grain growth and crystalline phase modification occurred as consequence of firing at high temperature. It has been shown that niobium addition inhibits grain coarsening and hinders anatase-to-rutile phase transition. These semiconducting films exhibited n-type behavior, while Nb acted as donor-dopant. Gas measurements demonstrated that the films are suitable for CO or NO2 sensing. Microstructural characterization by electron microscopy and differential thermal analysis (DTA) highlights the dependence of gas-sensing behavior on film's properties. (C) 2000 Elsevier Science S.A. All rights reserved.
Keywords: P1 Proceeding; Electron microscopy for materials research (EMAT); Vision lab
Impact Factor: 5.401
Times cited: 51
DOI: 10.1016/S0925-4005(00)00474-3
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“LPE growth and characterization of InGaAsP/InP heterostructures: IR-emitting diodes at 1.66 μm: application to the remote monitoring of methane gas”. Volkov VV, van Landuyt J, Marushkin K, Gijbels R, Férauge C, Vasilyev MG, Shelyakin AA, Sokolovsky AA, Sensors and actuators : A : physical 62, 624 (1997). http://doi.org/10.1016/S0924-4247(97)01377-0
Abstract: Highly effective IR light-emitting diodes operating at the wavelength 1.66 mu m and based on the buried heterostructure In0.88Ga0.12As0.26P0.74/ In0.72Ga0.28As0.62P0.38/In0.53Ga0.47As/InP have been grown by liquid-phase epitaxy (LPE) and characterized in detail by means of transmission electron microscopy (TEM), high-resolution electron microscopy (HREM),electron diffraction (ED), X-ray diffraction (XRD), secondary-ion mass spectrometry (SIMS) and electroluminescence measurements. The InGaAsP epilayers are found to be well lattice matched and of good structural quality. A tentative explanation is presented for the spinodal decomposition observed in InGaAsP alloys. A new type of selective CK, gas sensor has been developed and fabricated an the basis of the IR light-emitting diode mentioned above. Especially designed for the remote control of CH4 gas via fibre optics, an integrated optoelectronic readout scheme has been developed and tested, It is shown that the proposed type of sensor can be used for the quantitative remote control of CH4 gas concentration (0.2-100%) via a fibre glass line up to a distance of 2 x 1 km. (C) 1997 Elsevier Science S.A.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT); Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 2.499
Times cited: 3
DOI: 10.1016/S0924-4247(97)01377-0
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“Structural aspects of AuCu I or AuCu II and a cuboidal black configuration of f.c.c. disordered phase in AuCu-Pt and AuCu-Ag pseudobinary alloys”. Udoh K-I, El- Araby AM, Tanaka Y, Hisatsune K, Yasuda K, Van Tendeloo G, van Landuyt J, Materials science and engineering: part A: structural materials: properties, microstructure and processing 203, 154 (1995). http://doi.org/10.1016/0921-5093(95)09850-X
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.567
Times cited: 15
DOI: 10.1016/0921-5093(95)09850-X
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“SO4-chain formation and ordering in [YSrCa]Sr2Cu2.78(SO4)0.22O7-\delta”. Krekels T, Milat O, Van Tendeloo G, van Landuyt J, Amelinckx S, Slater PR, Greaves C, Physica: C : superconductivity 210, 439 (1993). http://doi.org/10.1016/0921-4534(93)90988-3
Abstract: YBCO-based materials containing SO4-tetrahedra centered on the Cu(1)-sites of the CuO-chain plane have been examined by means of electron diffraction and high resolution electron microscopy. An incommensurate modulation is observed and attributed to the ordering of b-oriented SO4-rich chains in the Cu(1)-S-O-layer, described in terms of an SO4-concentration wave.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 0.942
Times cited: 18
DOI: 10.1016/0921-4534(93)90988-3
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“A novel approach to analyse FTIR spectra of precipitates in boron-doped silicon”. de Gryse O, Vanhellemont J, Clauws P, Lebedev O, van Landuyt J, Simoen E, Claeys C, Physica: B : condensed matter
T2 –, 22nd International Conference on Defects in Semiconductors (ICDS-22), JUL 28-AUG 01, 2003, UNIV AARHUS, AARHUS, DENMARK 340, 1013 (2003). http://doi.org/10.1016/j.physb.2003.09.194
Abstract: Infrared absorption spectra of composite precipitates are analysed with a modified Day-Thorpe algorithm, assuming a precipitated phase consisting of a mixture of two components with known optical properties. Additional constraints are introduced when solving the model equations by using a priori knowledge making the algorithm more reliable. It is shown that this novel approach allows determining both morphology and composition of precipitates. The method is applied to characterise oxide precipitates in boron-doped silicon. The results indicate that for the resistivity range above 60 mOmegacm, the precipitated phase is most probably SiO1.17+/-0.14, while for resistivities below 20 mOmega cm, precipitates consist of a SiO2/B2O3 composite with a large volume fraction of B(2)0(3) (up to 40% for 8 mOmegacm material). (C) 2003 Elsevier B.V. All rights reserved.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.386
Times cited: 4
DOI: 10.1016/j.physb.2003.09.194
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“Chemical and structural characterization of oxygen precipitates in silicon by infrared spectroscopy and TEM”. de Gryse O, Clauws P, Lebedev O, van Landuyt J, Vanhellemont J, Claeys C, Simoen E, Physica: B : condensed matter
T2 –, 21st International Conference on Defects in Semiconductors, JUL 16-20, 2001, GIESSEN, GERMANY 308, 294 (2001). http://doi.org/10.1016/S0921-4526(01)00801-8
Abstract: Infrared absorption spectra of polyhedral and platelet oxygen precipitates are analyzed using a modified Day-Thorpe approach (J. Phys.: Condens. Matter 11 (1999) 2551). The aspect ratio has been determined by TEM measurements. The reduced spectral function and the stoichiometry are extracted from the absorption spectra and the concentration of precipitated interstitial oxygen. One set of spectra reveal a Frohlich frequency around 1100 cm(-1) and another around 1110-1120 cm(-1). It is shown that the shift in the Frohlich frequency is not due to a different stoichiometry, but due to the detailed structure in the reduced spectral function. The oxygen precipitates consist of SiO. with gammaapproximate to1.1-1.2+/-0.1. (C) 2001 Elsevier Science B.V. All rights reserved.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.386
Times cited: 3
DOI: 10.1016/S0921-4526(01)00801-8
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“In situ transmission electron microscopy study of the silicidation process in Co thin films on patterned (001) Si substrates”. Ghica C, Nistor L, Bender H, Steegen A, Lauwers A, Maex K, van Landuyt J, Journal of materials research 16, 701 (2001). http://doi.org/10.1557/JMR.2001.0121
Abstract: The results of an in situ transmission electron microscopy study of the formation of Co-silicides on patterned (001) Si substrates are discussed. It is shown that the results of the in situ heating experiments agreed very well with the data based on standard rapid thermal annealing experiments. Fast heating rates resulted in better definition of the silicide lines. Also, better lines were obtained for samples that received already a low-temperature ex situ anneal. A Ti cap layer gave rise to a higher degree of epitaxy in the CoSi2 silicide.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.673
Times cited: 4
DOI: 10.1557/JMR.2001.0121
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“Structural studies of diamond thin films grown from the arc plasma”. Nistor LC, van Landuyt J, Journal of materials research 12, 2533 (1998)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.673
Times cited: 13
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“Up close: Center for Electron Microscopy of Materials Science at the University of Antwerp”. Van Tendeloo G, Schryvers D, van Dyck D, van Landuyt J, Amelinckx S, MRS bulletin , 57 (1994)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab
Impact Factor: 5.667
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“Een tempel voor elektronenmicroscopie “kijken naar atomen””. van Landuyt J, Fonds informatief 38, 13 (1998)
Keywords: A3 Journal article; Electron microscopy for materials research (EMAT)
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“Crystalline structure of very hard tungsten carbide thin films obtained by reactive pulsed laser deposition”. Mihailescu IN, Gyorgy E, Marin G, Popescu M, Teodorescu VS, van Landuyt J, Grivas C, Hatziapostolou A, Journal of vacuum science and technology: A: vacuum surfaces and films 17, 249 (1999). http://doi.org/10.1116/1.581579
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.374
Times cited: 8
DOI: 10.1116/1.581579
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“Direct observation of laser-induced crystallization of a-C : H films”. Nistor LC, van Landuyt J, Ralchenko VG, Kononenko TV, Obraztsova ED, Strelnitsky VE, Applied physics A : materials science &, processing 58, 137 (1994). http://doi.org/10.1007/BF00332170
Abstract: The post-growth modification of diamond-like amorphous hydrogenated carbon a-C:H films by laser treatment has been studied by transmission electron microscopy and Raman spectroscopy. a-C:H films grown on Si substrates by benzene decomposition in a rf glow discharge were irradiated with 15 ns pulses of a KrF-excimer laser with fluences in the ran e of E = 50-700 mJ/cm(2). At fluences below 100 mJ/cm(2) an increase in the number of graphitic clusters and in their ordering was evidenced from Raman spectra, while the film structure remained amorphous according to electron microscopy and electron diffraction observations. At higher fluences the appearance of diamond particles of 2-7 nm size, embedded into the lower crystallized graphitic matrix, was observed and simultaneously a progressive growth of graphite nanocrystals with dimensions from 2 nm to 4 nm was deduced from Raman measurements. The maximum thickness of the crystallized surface layer (approximate to 400 nm) and the degree of laser annealing are limited by the film ablation which starts at E > 250 mJ/cm(2). The laser-treated areas lose their chemical inertness. In particular, chemical etching in chromium acid becomes possible, which may be used for patterning the highly inert carbon films.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 73
DOI: 10.1007/BF00332170
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“In-situ HREM irradiation study of point defect clustering in strained GexSi1-x/(001)Si heterostructure”. Fedina L, Lebedev OI, Van Tendeloo G, van Landuyt J, Conference series of the Institute of Physics 157, 55 (1997)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 1
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“Morphology and defects in shallow trench isolation structures”. Stuer C, van Landuyt J, Bender H, Rooyackers R, Badenes G, Conference series of the Institute of Physics 164, 443 (1999)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 1
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“New intermediate defect configuration in Si studied by in situ HREM irradiation”. Fedina L, Gutakovskii A, Aseev A, van Landuyt J, Vanhellemont J, Conference series of the Institute of Physics 157, 43 (1997)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
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“TEM studies of processed Si device materials”. Vanhellemont J, Bender H, van Landuyt J, Conference series of the Institute of Physics 157, 393 (1997)
Abstract: Recent developments in the field of TEM characterisation of Si device materials are discussed and illustrated by a few case studies of material in different stages of various kinds of processing. Important challenges are the ever decreasing defect densities and device feature sizes. Defect delineation techniques using large area inspection tools yielding accurate coordinates of the defects to be studied have therefore become an essential part of the TEM analysis procedure. The possibility to transfer these defect coordinates without loss of accuracy to tools for local TEM specimen preparation is also a conditio sine qua non for a successful analysis. Insitu TEM remains important as dynamic processes can be observed and analysed under well defined experimental conditions. As case studies illustrating new developments, results are presented on defects in as-grown Ct silicon, on in-situ studies in processed silicon, on problem sites in advanced integrated circuit structures and on assessment of localised strain fields in the nm size scale.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
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“Dynamical electron diffraction in substitutionally disordered column structures”. De Meulenaere P, van Dyck D, Van Tendeloo G, van Landuyt J, Ultramicroscopy 60, 171 (1995). http://doi.org/10.1016/0304-3991(95)00040-8
Abstract: For column structures, such as fee-based alloys viewed along the cube direction, the concept of electron channelling through the atom columns is more and more used to interpret the corresponding HREM images. In the case of(partially) disordered columns, the projected potential approach which is used in the channelling description must be questioned since the arrangement of the atoms along the beam direction might affect the exit wave of the electrons. In this paper, we critically inspect this top-bottom effect using multi-slice calculations. A modified channelling theory is introduced which turns out to be very appropriate for the interpretation of these results. For substitutionally disordered column structures, it is also discussed how to link the chemical composition of the material to statistical data of the HREM image. This results in a convenient tool to discern images taken at different thicknesses and focus values.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab
Impact Factor: 2.436
Times cited: 14
DOI: 10.1016/0304-3991(95)00040-8
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“Electron diffraction effects of conical, helically wound, graphite whiskers”. Luyten W, Krekels T, Amelinckx S, Van Tendeloo G, van Dyck D, van Landuyt J, Ultramicroscopy 49, 123 (1993). http://doi.org/10.1016/0304-3991(93)90219-N
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab
Impact Factor: 2.436
Times cited: 14
DOI: 10.1016/0304-3991(93)90219-N
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“In situ HREM study of electron irradiation effects in AgCl microcrystals”. Goessens C, Schryvers D, van Landuyt J, de Keyzer R, Ultramicroscopy 40, 151 (1992). http://doi.org/10.1016/0304-3991(92)90056-P
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.436
Times cited: 10
DOI: 10.1016/0304-3991(92)90056-P
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“Inelastic scattering of high-energy electrons in a crystal in thermal equilibrium with the environment: 1: theoretical framework”. Fanidis C, van Dyck D, van Landuyt J, Ultramicroscopy 41, 55 (1992). http://doi.org/10.1016/0304-3991(92)90094-Z
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab
Impact Factor: 2.436
Times cited: 17
DOI: 10.1016/0304-3991(92)90094-Z
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“On the interpretation of HREM images of partially ordered alloys”. De Meulenaere P, Van Tendeloo G, van Landuyt J, van Dyck D, Ultramicroscopy 60, 265 (1995). http://doi.org/10.1016/0304-3991(95)00065-9
Abstract: The ordering for 11/20 alloys has been studied by high-resolution electron microscopy (HREM). The distribution of the intensity maxima in the HREM image have been statistically examined, which provides a profound basis for the image interpretation. Processing of the HREM images allows ''dark-field'' images to be obtained, exhibiting a two-dimensional distribution of those columns which contain the most information in order to interpret the short-range order correlations. Pair correlations and higher cluster correlations between projected columns can be visualised, providing unique information about the ordering as retrieved from an experimental result without any other assumption. The method has been applied to Au4Cr and to Au4Mn to interpret the quenched short-range order state and the transition to long-range order.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab
Impact Factor: 2.436
Times cited: 20
DOI: 10.1016/0304-3991(95)00065-9
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“The reciprocal space of carbon tubes: a detailed interpretation of the electron diffraction effects”. Zhang XB, Zhang XF, Amelinckx S, Van Tendeloo G, van Landuyt J, Ultramicroscopy 54, 237 (1994). http://doi.org/10.1016/0304-3991(94)90123-6
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.436
Times cited: 59
DOI: 10.1016/0304-3991(94)90123-6
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“A simple preparation method for air-sensitive specimens for transmission electron microscopy demonstrated by Rb6C60”. Zhang XF, Zhang XB, Bernaerts D, Van Tendeloo G, Amelinckx S, van Landuyt J, Werner H, Ultramicroscopy 55, 25 (1994). http://doi.org/10.1016/0304-3991(94)90077-9
Abstract: In this paper a particularly simple but efficient method is presented by which samples of alkali-doped C-60 materials or other air-sensitive materials can be prepared and transferred into a transmission electron microscope for direct observations and investigations. Flexible, transparent glove bags are used which are filled to a slight overpressure with dry nitrogen. Under this protective atmosphere, the air-sensitive sample is mounted in the specimen holder and inserted in the vacuum of the electron microscope. Rb6C60 which is prepared and transferred into the microscope in this way has been investigated by transmission electron microscopy (TEM). The results confirm the bcc structure and especially the location of the rubidium atoms.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.436
Times cited: 2
DOI: 10.1016/0304-3991(94)90077-9
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“The evolution of HVEM application in antwerp”. van Landuyt J, Ultramicroscopy
T2 –, 2nd Osaka International Symp.on High-Voltage Electron Microscopy : New Directions and Future Aspects of High Voltage Electron Microscopy, November 8-10, 1990, Osaka University, Osaka, Japan 39, 287 (1991). http://doi.org/10.1016/0304-3991(91)90208-N
Abstract: The evolution of the use of the 1250 keV high-voltage electron microscope in Antwerp is sketched by illustrating a non-exhaustive set of examples in various fields. One of the main present fields of application gets some more attention, i.e. the defect studies as produced by processing steps in microelectronic devices: (i) strain-induced dislocations at the edges of various device isolation interlayers, (ii) morphologies resulting from high-energy ion implantation creating buried layers for silicon on insulator (SOI) and other implantation technologies.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.436
DOI: 10.1016/0304-3991(91)90208-N
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“Computational comparisons between the conventional multislice method and the third-order multislice method for calculating high-energy electron diffraction and imaging”. Chen JH, van Dyck D, op de Beeck M, van Landuyt J, Ultramicroscopy 69, 219 (1997)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab
Impact Factor: 2.843
Times cited: 11
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“Inelastic scattering of high-energy electrons in a crystal in thermal equilibrium with the environment: part 2: solution of the equations and applications to concrete cases”. Fanidis C, van Dyck D, van Landuyt J, Ultramicroscopy 48, 133 (1993)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab
Impact Factor: 2.436
Times cited: 6
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“The structure of different phases of pure C70 crystals”. Verheijen MA, Meekes H, Meijer G, Bennema P, de Boer JL, van Smaalen S, Van Tendeloo G, Amelinckx S, Muto S, van Landuyt J, Chemical physics 166, 287 (1992). http://doi.org/10.1016/0301-0104(92)87026-6
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.652
Times cited: 168
DOI: 10.1016/0301-0104(92)87026-6
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“The texture of catalytically grown coil-shaped carbon nanotubes”. Zhang XB, Zhang XF, Bernaerts D, Van Tendeloo G, Amelinckx S, van Landuyt J, Ivanov V, Nagy JB, Lambin P, Lucas AA, Europhysics letters 27, 141 (1994). http://doi.org/10.1209/0295-5075/27/2/011
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.095
Times cited: 168
DOI: 10.1209/0295-5075/27/2/011
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“Observation of vacancy clustering in Si crystals during in situ electron irradiation in a high voltage electron microscope”. Fedina L, van Landuyt J, Vanhellemont J, Aseev A, Materials Research Society symposium proceedings 404, 189 (1996)
Keywords: P1 Proceeding; Electron microscopy for materials research (EMAT)
Times cited: 1
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“Point defect reactions in silicon studied in situ by high flux electron irradiation in high voltage transmission electron microscope”. Vanhellemont J, Romano Rodriguez A, Fedina L, van Landuyt J, Aseev A, Materials science and technology 11, 1194 (1995). http://doi.org/10.1179/mst.1995.11.11.1194
Abstract: Results are presented of in situ studies of 1 MeV electron irradiation induced (113) defect generation in silicon containing different types and concentrations of extrinsic point defects. A semiquantitative model is developed describing the influence of interfaces and stress fields and of extrinsic point defects on the (113) defect generation in silicon during irradiation. The theoretical results obtained are correlated with experimental data obtained on silicon uniformly doped with boron and phosphorus and with observations obtained by irradiating cross-sectional samples of wafers with highly doped surface layers. It is shown that in situ irradiation in a high voltage election microscope is a powerful tool for studying local point defect reactions in silicon. (C) 1995 The Institute of Materials.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 0.995
Times cited: 7
DOI: 10.1179/mst.1995.11.11.1194
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