“Transport of intensity phase retrieval of arbitrary wave fields including vortices”. Lubk A, Guzzinati G, Börrnert F, Verbeeck J, Physical review letters 111, 173902 (2013). http://doi.org/10.1103/PhysRevLett.111.173902
Abstract: The phase problem can be considered as one of the cornerstones of quantum mechanics intimately connected to the detection process and the uncertainty relation. The latter impose fundamental limits on the manifold phase reconstruction schemes invented to date, in particular, at small magnitudes of the quantum wave. Here, we show that a rigorous solution of the transport of intensity reconstruction (TIE) scheme in terms of a linear elliptic partial differential equation for the phase provides reconstructions even in the presence of wave zeros if particular boundary conditions are given. We furthermore discuss how partial coherence hampers phase reconstruction and show that a modified version of the TIE reconstructs the curl-free current density at arbitrary (in)coherence. Our results open the way for TIE-based phase retrieval of arbitrary wave fields, eventually containing zeros such as phase vortices.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 8.462
Times cited: 40
DOI: 10.1103/PhysRevLett.111.173902
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“2D atomic mapping of oxidation states in transition metal oxides by scanning transmission electron microscopy and electron energy-loss spectroscopy : reply”. Tan H, Turner S, Yucelen E, Verbeeck J, Van Tendeloo G, Physical review letters 108, 259702 (2012). http://doi.org/10.1103/PHYSREVLETT.108.259702
Keywords: Editorial; Electron microscopy for materials research (EMAT)
Impact Factor: 8.462
DOI: 10.1103/PHYSREVLETT.108.259702
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“New orientationally ordered low-temperature superstructure in high-purity C60”. Van Tendeloo G, Amelinckx S, Verheijen MA, van Loosdrecht PHM, Meijer G, Physical review letters 69, 1065 (1992)
Abstract: http://dx.doi.org/doi:10.1103/PhysRevLett.69.1065
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 7.512
Times cited: 69
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“Survival of the Dirac points in rippled graphene”. Covaci L, Berciu M, Physical Review Letters 100, 256405 (2008). http://doi.org/10.1103/PhysRevLett.100.256405
Abstract: We study the effects of the rippling of a graphene sheet on quasiparticle dispersion. This is achieved using a generalization to the honeycomb lattice of the momentum average approximation, which is accurate for all coupling strengths and at all energies. We show that even though the position of the Dirac points may move and the Fermi speed can be renormalized significantly, quasiparticles with very long lifetimes survive near the Dirac points even for very strong couplings.
Keywords: A1 Journal article; Electron Microscopy for Materials Science (EMAT);
Impact Factor: 8.462
Times cited: 15
DOI: 10.1103/PhysRevLett.100.256405
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“Unscrambling Mixed Elements using High Angle Annular Dark Field Scanning Transmission Electron Microscopy”. van den Bos KH W, De Backer A, Martinez GT, Winckelmans N, Bals S, Nellist PD, Van Aert S, Physical review letters 116, 246101 (2016). http://doi.org/10.1103/PhysRevLett.116.246101
Abstract: The development of new nanocrystals with outstanding physicochemical properties requires a full threedimensional (3D) characterization at the atomic scale. For homogeneous nanocrystals, counting the number of atoms in each atomic column from high angle annular dark field scanning transmission electron microscopy images has been shown to be a successful technique to get access to this 3D information. However, technologically important nanostructures often consist of more than one chemical element. In order to extend atom counting to heterogeneous materials, a new atomic lensing model is presented. This model takes dynamical electron diffraction into account and opens up new possibilities for unraveling the 3D composition at the atomic scale. Here, the method is applied to determine the 3D structure of Au@Ag core-shell nanorods, but it is applicable to a wide range of heterogeneous complex nanostructures.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 8.462
Times cited: 46
DOI: 10.1103/PhysRevLett.116.246101
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“Spin-orbit semimetal SrIrO3 in the two-dimensional limit”. Groenendijk DJ, Autieri C, Girovsky J, Martinez-Velarte MC, Manca N, Mattoni G, Monteiro AMRVL, Gauquelin N, Verbeeck J, Otte AF, Gabay M, Picozzi S, Caviglia AD, Physical review letters 119, 256403 (2017). http://doi.org/10.1103/PHYSREVLETT.119.256403
Abstract: <script type='text/javascript'>document.write(unpmarked('We investigate the thickness-dependent electronic properties of ultrathin SrIrO3 and discover a transition from a semimetallic to a correlated insulating state below 4 unit cells. Low-temperature magnetoconductance measurements show that spin fluctuations in the semimetallic state are significantly enhanced while approaching the transition point. The electronic properties are further studied by scanning tunneling spectroscopy, showing that 4 unit cell SrIrO(3)d is on the verge of a gap opening. Our density functional theory calculations reproduce the critical thickness of the transition and show that the opening of a gap in ultrathin SrIrO3 requires antiferromagnetic order.'));
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 8.462
Times cited: 79
DOI: 10.1103/PHYSREVLETT.119.256403
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“Single Atom Detection from Low Contrast-to-Noise Ratio Electron Microscopy Images”. Fatermans J, den Dekker A J, Müller-Caspary K, Lobato I, O’Leary C M, Nellist P D, Van Aert S, Physical review letters 121, 056101 (2018). http://doi.org/10.1103/PhysRevLett.121.056101
Abstract: Single atom detection is of key importance to solving a wide range of scientific and technological problems. The strong interaction of electrons with matter makes transmission electron microscopy one of the most promising techniques. In particular, aberration correction using scanning transmission electron microscopy has made a significant step forward toward detecting single atoms. However, to overcome radiation damage, related to the use of high-energy electrons, the incoming electron dose should be kept low enough. This results in images exhibiting a low signal-to-noise ratio and extremely weak contrast, especially for light-element nanomaterials. To overcome this problem, a combination of physics-based model fitting and the use of a model-order selection method is proposed, enabling one to detect single atoms with high reliability.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab
Impact Factor: 8.462
Times cited: 6
DOI: 10.1103/PhysRevLett.121.056101
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“Control of Knock-On Damage for 3D Atomic Scale Quantification of Nanostructures: Making Every Electron Count in Scanning Transmission Electron Microscopy”. Van Aert S, De Backer A, Jones L, Martinez GT, Béché, A, Nellist PD, Physical review letters 122, 066101 (2019). http://doi.org/10.1103/PhysRevLett.122.066101
Abstract: Understanding nanostructures down to the atomic level is the key to optimizing the design of advancedmaterials with revolutionary novel properties. This requires characterization methods capable of quantifying the three-dimensional (3D) atomic structure with the highest possible precision. A successful approach to reach this goal is to count the number of atoms in each atomic column from 2D annular dark field scanning transmission electron microscopy images. To count atoms with single atom sensitivity, a minimum electron dose has been shown to be necessary, while on the other hand beam damage, induced by the high energy electrons, puts a limit on the tolerable dose. An important challenge is therefore to develop experimental strategies to optimize the electron dose by balancing atom-counting fidelity vs the risk of knock-on damage. To achieve this goal, a statistical framework combined with physics-based modeling of the dose-dependent processes is here proposed and experimentally verified. This model enables an investigator to theoretically predict, in advance of an experimental measurement, the optimal electron dose resulting in an unambiguous quantification of nanostructures in their native state with the highest attainable precision.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 8.462
Times cited: 3
DOI: 10.1103/PhysRevLett.122.066101
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“Electrical Polarization in AlN/GaN Nanodisks Measured by Momentum-Resolved 4D Scanning Transmission Electron Microscopy”. Müller-Caspary K, Grieb T, Müßener J, Gauquelin N, Hille P, Schörmann J, Verbeeck J, Van Aert S, Eickhoff M, Rosenauer A, Physical review letters 122, 106102 (2019). http://doi.org/10.1103/PhysRevLett.122.106102
Abstract: We report the mapping of polarization-induced internal electric fields in AlN/GaN nanowire heterostructures at unit cell resolution as a key for the correlation of optical and structural phenomena in semiconductor optoelectronics. Momentum-resolved aberration-corrected scanning transmission electron microscopy is employed as a new imaging mode that simultaneously provides four-dimensional data in real and reciprocal space. We demonstrate how internal mesoscale and atomic electric fields can be separated in an experiment, which is verified by comprehensive dynamical simulations of multiple electron scattering. A mean difference of 5.3 +- 1.5 MV/cm is found for the polarization-induced electric fields in AlN and GaN, being in accordance with dedicated simulations and photoluminescence measurements in previous publications.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 8.462
Times cited: 26
DOI: 10.1103/PhysRevLett.122.106102
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“Measuring Dynamic Structural Changes of Nanoparticles at the Atomic Scale Using Scanning Transmission Electron Microscopy”. De wael A, De Backer A, Jones L, Varambhia A, Nellist PD, Van Aert S, Physical Review Letters 124, 106105 (2020). http://doi.org/10.1103/PhysRevLett.124.106105
Abstract: We propose a new method to measure atomic scale dynamics of nanoparticles from experimental high-resolution annular dark field scanning transmission electron microscopy images. By using the so-called hidden Markov model, which explicitly models the possibility of structural changes, the number of atoms in each atomic column can be quantified over time. This newly proposed method outperforms the current atom-counting procedure and enables the determination of the probabilities and cross sections for surface diffusion. This method is therefore of great importance for revealing and quantifying the atomic structure when it evolves over time via adatom dynamics, surface diffusion, beam effects, or during in situ experiments.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 8.6
DOI: 10.1103/PhysRevLett.124.106105
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“Secondary-Phase-Assisted Grain Boundary Migration in CuInSe2”. Li C, Sanli ES, Barragan-Yani D, Stange H, Heinemann M-D, Greiner D, Sigle W, Mainz R, Albe K, Abou-Ras D, van Aken P A, Physical Review Letters 124, 095702 (2020). http://doi.org/10.1103/PhysRevLett.124.095702
Abstract: Significant structural evolution occurs during the deposition of CuInSe2 solar materials when the Cu content increases. We use in situ heating in a scanning transmission electron microscope to directly observe how grain boundaries migrate during heating, causing nondefected grains to consume highly defected grains. Cu substitutes for In in the near grain boundary regions, turning them into a Cu-Se phase topotactic with the CuInSe2 grain interiors. Together with density functional theory and molecular dynamics calculations, we reveal how this Cu-Se phase makes the grain boundaries highly mobile.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 8.6
DOI: 10.1103/PhysRevLett.124.095702
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“Coupling Charge and Topological Reconstructions at Polar Oxide Interfaces”. van Thiel T c, Brzezicki W, Autieri C, Hortensius J r, Afanasiev D, Gauquelin N, Jannis D, Janssen N, Groenendijk D j, Fatermans J, Van Aert S, Verbeeck J, Cuoco M, Caviglia A d, Physical Review Letters 127, 127202 (2021). http://doi.org/10.1103/PhysRevLett.127.127202
Abstract: In oxide heterostructures, different materials are integrated into a single artificial crystal, resulting in a breaking of inversion symmetry across the heterointerfaces. A notable example is the interface between polar and nonpolar materials, where valence discontinuities lead to otherwise inaccessible charge and spin states. This approach paved the way for the discovery of numerous unconventional properties absent in the bulk constituents. However, control of the geometric structure of the electronic wave functions in correlated oxides remains an open challenge. Here, we create heterostructures consisting of ultrathin SrRuO3, an itinerant ferromagnet hosting momentum-space sources of Berry curvature, and
LaAlO3, a polar wide-band-gap insulator. Transmission electron microscopy reveals an atomically sharp LaO/RuO2/SrO interface configuration, leading to excess charge being pinned near the LaAlO3/SrRuO3 interface. We demonstrate through magneto-optical characterization, theoretical calculations and transport measurements that the real-space charge reconstruction drives a reorganization of the topological charges in the band structure, thereby modifying the momentum-space Berry curvature in SrRuO3. Our results illustrate how the topological and magnetic features of oxides can be manipulated by engineering charge discontinuities at oxide interfaces.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 8.462
Times cited: 17
DOI: 10.1103/PhysRevLett.127.127202
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“Atomic imaging of cage like structures of silicon”. Nistor L, Van Tendeloo G, Amelinckx S, Cros C, Physica status solidi: A: applied research 146, 119 (1994). http://doi.org/10.1002/pssa.2211460111
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 12
DOI: 10.1002/pssa.2211460111
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“Electron-diffraction evidence for ordering of interstitial silver ions in silver bromide microcrystals”. Goessens C, Schryvers D, van Dyck D, van Landuyt J, de Keyzer R, Physica status solidi: A 143, 277 (1994). http://doi.org/10.1002/pssa.2211430211
Abstract: The occurrence and origin of diffuse intensity contours in electron micrographs of AgBr crystals are investigated. The observations are interpreted in terms of a model, which attributes diffuse scattering to the presence of predominant atom or vacancy clusters of a particular polyhedral type. It is shown that irrespective of the crystal morphology, interstitial Ag ions order in AgBr material in clusters of finite size along 001 type planes. A different geometry of the diffuse intensity locus observed for triangular and hexagonal tabular grains is explained in terms of the different twin plane morphology of these grains.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab
Times cited: 7
DOI: 10.1002/pssa.2211430211
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“Electron microscopy and mass-spectrometry study of In GaAsP/InP heterostructures (p-i-n diodes) grown by liquid phase epitaxy”. Volkov VV, Luyten W, van Landuyt J, Férauge C, Oksenoid KG, Gijbels R, Vasilev MG, Shelyakin AA, Lazarev VB, Physica status solidi: A: applied research 140, 73 (1993). http://doi.org/10.1002/pssa.2211400105
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT); Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Times cited: 7
DOI: 10.1002/pssa.2211400105
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“Electron microscopy and mass-spectrometry study of In0.72Ga0.28As0.62P0.38 lasers grown by liquid phase epitaxy”. Luyten W, Volkov VV, van Landuyt J, Amelinckx S, Férauge C, Gijbels R, Vasilev MG, Shelyakin AA, Lazarev VB, Physica status solidi: A: applied research 140, 453 (1993). http://doi.org/10.1002/pssa.2211400216
Abstract: Broad area as well as buried heterostructure lasers based on In0.72Ga0.28As0.62P0.38/InP and emitting at 1.3 mum are grown by liquid phase epitaxy and are studied in detail by means of transmission electron microscopy, X-ray diffraction, secondary ion mass-spectrometry, and electroluminescence. The InGaAsP epilayer is found to be well lattice-matched and of good structural quality. A tentative explanation is presented for the spinodal decomposition observed in the InGaAsP alloy. We also report on the high performance characteristics of the infrared lasers.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT); Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Times cited: 3
DOI: 10.1002/pssa.2211400216
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“Extended defects formation in Si crystals by clustering of intrinsic point defects studied by in-situ electron irradiation in an HREM”. Fedina L, Gutakovskii A, Aseev A, van Landuyt J, Vanhellemont J, Physica status solidi: A: applied research
T2 –, International Conference on Extended Defects in Semiconductors (EDS 98), Sept. 06-11, 1998, Jaszowiec, Poland 171, 147 (1999). http://doi.org/10.1002/(SICI)1521-396X(199901)171:1<147::AID-PSSA147>3.0.CO;2-U
Abstract: In situ irradiation experiments in a high resolution electron microscope JEOL-4000EX at room temperature resulted in discovery of the isolated and combined clustering of vacancies and self-interstitial atoms on {111}- and {113}-habit planes both leading to an extended defect formation in Si crystals. The type of the defect is strongly affected by the type of supersaturation of point defects depending on the crystal thickness during electron irradiation. Because of the existence of energy barriers against recombination of interstitials with the extended aggregates of vacancies, a large family of intermediate defect configurations (IDCs) is formed on {113}- and {111}-habit planes at a low temperature under interstitial supersaturation in addition to the well-known {133}-defects of interstitial type. The formation of metastable IDCs inside vacancy aggregates prevents a way of recombination of defects in extended shape.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 40
DOI: 10.1002/(SICI)1521-396X(199901)171:1<147::AID-PSSA147>3.0.CO;2-U
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“Growth of R1+xBa2-xCu3O7-\delta epitaxial films investigated by in situ scanning tunneling microscopy”. Salluzzo M, Aruta C, Maggio-Aprile I, Fischer Ø, Bals S, Zegenhagen J, Physica status solidi: A: applied research 186, 339 (2001). http://doi.org/10.1002/1521-396X(200108)186:3<339::AID-PSSA339>3.0.CO;2-5
Abstract: The problem of the epitaxial growth of the high temperature superconducting R1+xBa2xCu3O7δ (R = Y or rare earth except Ce and Tb) films has been addressed. Using in situ ultra high vacuum Scanning Tunneling Microscopy (UHV-STM) we have studied the role of cationic substitution and substrate mismatch on the growth mode of stoichiometric and Nd-rich Nd1+xBa2xCu3O7δ thin films. The results are compared to the growth of Y1Ba2Cu3O7δ, Dy1Ba2Cu3O7δ and Gd1Ba2Cu3O7δ epitaxial films. Two main phenomena are investigated: a) the first stage of the direct nucleation on the substrate and b) the crossover between 2D and 3D growth upon increasing the film thickness. At the first stage of the growth, pseudo-cubic perovskite (Re,Ba)CuO3 nuclei are formed. While they disappear after the growth of a few nm in stoichiometric films, they persist on the surface of Nd-rich films of up to 110 nm thickness. Stoichiometric R1+xBa2xCu3O7δ films exhibit a rough morphology with increasing thickness due to island growth mode, whereas Nd-rich films remain smooth and continue to grow layer by layer. It is proposed that linear defects (like anti-phase boundaries), which are formed due to the misalignment of growth fronts, are the source of screw dislocations in stoichiometric films. In Nd-rich films, linear defects are eliminated through the insertion of (Nd,Ba)CuO3 extra layers without introduction of any screw dislocations.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 17
DOI: 10.1002/1521-396X(200108)186:3<339::AID-PSSA339>3.0.CO;2-5
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“HRTEM studies of dislocations in cubic BN”. Nistor LC, Van Tendeloo G, Dincã, G, Physica status solidi: A: applied research 201, 2578 (2004). http://doi.org/10.1002/pssa.200405192
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 8
DOI: 10.1002/pssa.200405192
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“In-situ HVEM study of dislocation generation in patterned stress fields at silicon surfaces”. Vanhellemont J, Claeys C, van Landuyt J, Physica status solidi: A: applied research 150, 497 (1995). http://doi.org/10.1002/pssa.2211500144
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 6
DOI: 10.1002/pssa.2211500144
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“Modification of the multislice method for calculating coherent STEM images”. Chen JH, van Dyck D, op de Beeck M, Broeckx J, van Landuyt J, Physica status solidi: A: applied research 150, 13 (1995). http://doi.org/10.1002/pssa.2211500103
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab
Times cited: 5
DOI: 10.1002/pssa.2211500103
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“Oxygen and fluorine doping in Sr2MnGaO5 brownmillerite”. Antipov EV, Abakumov AM, Alekseeva AM, Rozova MG, Hadermann J, Lebedev OI, Van Tendeloo G, Physica status solidi: A: applied research 201, 1403 (2004). http://doi.org/10.1002/pssa.200304428
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 9
DOI: 10.1002/pssa.200304428
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“A peculiar diffraction effect in FCC crystals of C60”. Amelinckx S, van Heurck C, van Dyck D, Van Tendeloo G, Physica status solidi: A: applied research 131, 589 (1992). http://doi.org/10.1002/pssa.2211310231
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab
Times cited: 13
DOI: 10.1002/pssa.2211310231
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“Strain mapping around dislocations in diamond and cBN”. Willems B, Nistor L, Ghica C, Van Tendeloo G, Physica status solidi: A: applied research 202, 2224 (2005). http://doi.org/10.1002/pssa.200561923
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 4
DOI: 10.1002/pssa.200561923
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“Structural aspects of CVD idamond wafers grown at different hydrogen flow rates”. Nistor L, van Landuyt J, Ralchenko V, Physica status solidi: A: applied research 171, 5 (1999). http://doi.org/10.1002/(SICI)1521-396X(199907)174:1<5::AID-PSSA5>3.3.CO;2-3
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 15
DOI: 10.1002/(SICI)1521-396X(199907)174:1<5::AID-PSSA5>3.3.CO;2-3
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“A technique for the sp2/sp3 characterization of carbon materials”. Titantah JT, Lamoen D, Physica status solidi: A: applied research 201, 2492 (2004). http://doi.org/10.1002/pssa.200405176
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 2
DOI: 10.1002/pssa.200405176
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“TEM study on precipitation behavior in Cu-Co alloys”. Takeda M, Suzuki N, Shinohara G, Endo T, van Landuyt J, Physica status solidi: A: applied research 168, 27 (1998). http://doi.org/10.1002/(SICI)1521-396X(199807)168:1<27::AID-PSSA27>3.0.CO;2-S
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 18
DOI: 10.1002/(SICI)1521-396X(199807)168:1<27::AID-PSSA27>3.0.CO;2-S
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“Why does polycrystalline natural diamond turn black after annealing?”.Willems B, de Corte K, Van Tendeloo G, Physica status solidi: A: applied research 201, 2486 (2004). http://doi.org/10.1002/pssa.200405178
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 10
DOI: 10.1002/pssa.200405178
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“Extended defects formation in Si crystals by clustering of intrinsic point defects studied by in-situ irradiation in an HREM”. Fedina L, Gutakovskii A, Aseev A, van Landuyt J, Vanhellemont J, Physica status solidi: A: applied research 171, 147 (1999)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 40
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“New erbium silicide superstructures: a study by high resolution electron microscopy”. Frangis N, Van Tendeloo G, van Landuyt J, Kaltsas G, Travlos A, Nassiopoulos AG, Physica status solidi: A: applied research 158, 107 (1996)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 6
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