Abstract: We investigate the adsorption process of small molecules on graphene through first-principles calculations and show the presence of two main charge transfer mechanisms. Which mechanism is the dominant one depends on the magnetic properties of the adsorbing molecules. We explain these mechanisms through the density of states of the system and the molecular orbitals of the adsorbates, and demonstrate the possible difficulties in calculating the charge transfer from first principles between a graphene sheet and a molecule. Our results are in good agreement with experiment.

Abstract: The effect of a metallic gate on the bound states of a shallow donor located near the gate is studied. We calculate the energy spectrum as a function of the distance between the metallic gate and the donor and find an anti-crossing behavior in the energy levels for certain distances. We show how a transverse electric field can tune the average position of the electron with respect to the metallic gate and the impurity.

Abstract: A flow injection hydride generation graphite furnace atomic absorption spectrometric (FI-HG-GFAAS) method was applied to the determination of Se in Se-doped and undoped cereals and bakery products. For the purpose of doping, the soils used for the cultivation of the cereals were dosed with Se- doped foliar fertilizers. The samples were dissolved in a mixture of HNO(3) and H(2)O(2) solutions using micro-waveassisted digestion. The decomposition of H(2)Se generated from the sample solutions and the trapping of elemental Se were performed at a temperature of 300 degrees C on an Ir-pretreated integrated graphite platform of a transversally heated graphite atomizer(THGA). For release of the trapped Se within a fairly short atomization time (5s), an atomization temperature of 2200 degrees C was observed to be optimal. The overall efficiency of hydride generation, transport and trapping was similar to 86%. The upper limit of the linear dynamic range of calibration was 10 mu gL(-1), which corresponds to 0.5 mu g g(-1) for solid samples. Recovery of the samples spiked with Se(VI) solutions was found to be 93 +/- 6% on average. The relative standard deviation of the determinations was less than 8%. The limit of detection was found to be 0.06 mu gL(-1), corresponding to 3 ng g(-1) for solid samples. The accuracy of the method was verified with the use of IAEA-155 ( whey powder) certified reference material. End-capped THGA tubes resulted in an extension of the linear calibration range compared to that of standard THGAs. The Se content in bakery products made of undoped cereals ranged from 7.7 to 68 ng g(-1) ( wet weight) in 18 samples, whereas the Se content of the corresponding cereals was found to be below 100 ng g(-1) ( wet weight). The Se level of cereals grown on soils treated with Se- doped fertilizers ranged from 128 to 1046 ng g(-1) ( wet weight), and it depended linearly on the Se concentration of the corresponding foliar fertilizer.

Abstract: In transition metal perovskites ABO3 the physical properties are largely driven by the rotations of the BO6 octahedra, which can be tuned in thin films through strain and dimensionality control. However, both approaches have fundamental and practical limitations due to discrete and indirect variations in bond angles, bond lengths and film symmetry by using commercially available substrates. Here, we introduce modulation tilt control as a new approach to tune the ground state of perovskite oxide thin films by acting explicitly on the oxygen octahedra rotation modes, i.e. directly on the bond angles. By intercalating the prototype SmNiO3 target material with a tilt-control layer, we cause the system to change the natural amplitude of a given rotation mode without affecting the interactions. In contrast to strain and dimensionality engineering, our method enables a continuous fine-tuning of the materials properties. This is achieved through two independent adjustable parameters: the nature of the tilt-control material (through its symmetry, elastic constants and oxygen rotation angles) and the relative thicknesses of the target and tilt-control materials. As a result, a magnetic and electronic phase diagram can be obtained, normally only accessible by A-site element substitution, within the single SmNiO3 compound. With this unique approach, we successfully adjusted the metal-insulator transition (MIT) to room temperature to fulfill the desired conditions for optical switching applications.