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Author |
Title |
Year |
Publication |
Volume |
Times cited |
Additional Links |
Links |
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Goessens, C.; Schryvers, D.; van Landuyt, J.; Amelinckx, S.; Verbeeck, A.; de Keyzer, R. |
Characterization of crystal defects in mixed tabular silver halide grains by conventional transmission electron microscopy and X-ray diffractometry |
1991 |
Journal of crystal growth |
110 |
40 |
UA library record; WoS full record; WoS citing articles |
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Volkov, V.V.; van Landuyt, J.; Marushkin, K.M.; Gijbels, R.; Férauge, C.; Vasilyev, M.G.; Shelyakin, A.A.; Sokolovsky, A.A. |
Characterization of LPE grown InGaAsP/InP heterostructures: IR-LED at 1.66 μm used for the remote monitoring of methane gas |
1997 |
Journal of crystal growth |
173 |
4 |
UA library record; WoS full record; WoS citing articles |
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Goessens, C.; Schryvers, D.; van Landuyt, J.; de Keyzer, R. |
Electron microscopical investigation of tetrahedral-shaped AgBr microcrystals |
1997 |
Journal of crystal growth |
172 |
15 |
UA library record; WoS full record; WoS citing articles |
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Frangis, N.; Stoemenos, J.; van Landuyt, J.; Nejim, A.; Hemment, P.L.F. |
The formation of 3C-SiC in crystalline Si by carbon implantation at 9500C and annealing: a structural study |
1997 |
Journal of crystal growth |
181 |
9 |
UA library record; WoS full record; WoS citing articles |
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Frangis, N.; van Landuyt, J.; Kaltsas, G.; Travlos, A.; Nassiopoulos, A.G. |
Growth of erbium-silicide films on (100) silicon as characterised by electron microscopy and diffraction |
1997 |
Journal of crystal growth |
172 |
29 |
UA library record; WoS full record; WoS citing articles |
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Bernaerts, D.; Amelinckx, S.; Van Tendeloo, G.; van Landuyt, J. |
Microstructure and formation mechanisms of cylindrical and conical scrolls of the misfit layer compounds PbNbnS2n+1 |
1997 |
Journal of crystal growth |
172 |
23 |
UA library record; WoS full record; WoS citing articles |
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Teodorescu, V.; Nistor, L.; Bender, H.; Steegen, A.; Lauwers, A.; Maex, K.; van Landuyt, J. |
In situ transmission electron microscopy study of Ni silicide phases formed on (001) Si active lines |
2001 |
Journal of applied physics |
90 |
97 |
UA library record; WoS full record; WoS citing articles |
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Ignatova, V.A.; Lebedev, O.I.; Watjen, U.; van Vaeck, L.; van Landuyt, J.; Gijbels, R.; Adams, F. |
Metal and composite nanocluster precipitate formation in silicon dioxide implanted with Sb+ ions |
2002 |
Journal of applied physics |
92 |
5 |
UA library record; WoS full record; WoS citing articles |
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Gryse, O.D.; Clauws, P.; van Landuyt, J.; Lebedev, O.; Claeys, C.; Simoen, E.; Vanhellemont, J. |
Oxide phase determination in silicon using infrared spectroscopy and transmission electron microscopy techniques |
2002 |
Journal of applied physics |
91 |
27 |
UA library record; WoS full record; WoS citing articles |
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de Gryse, O.; Clauws, P.; Vanhellemont, J.; Lebedev, O.I.; van Landuyt, J.; Simoen, E.; Claeys, C. |
Characterization of oxide precipitates in heavily B-doped silicon by infrared spectroscopy |
2004 |
Journal of the electrochemical society |
151 |
13 |
UA library record; WoS full record; WoS citing articles |
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Stuer, C.; van Landuyt, J.; Bender, H.; de Wolf, I.; Rooyackers, R.; Badenes, G. |
Investigation by convergent beam electron diffraction of the stress around shallow trench isolation structures |
2001 |
Journal of the electrochemical society |
148 |
13 |
UA library record; WoS full record; WoS citing articles |
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Ivanov, V.; Nagy, J.B.; Lambin, P.; Lucas, A.; Zhang, X.B.; Zhang, X.F.; Bernaerts, D.; Van Tendeloo, G.; Amelinckx, S.; van Landuyt, J. |
The study of carbon nanotubules produced by catalytic method |
1994 |
Chemical physics letters |
223 |
405 |
UA library record; WoS full record; WoS citing articles |
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Ivanov, V.; Nagy, J.B.; Lambin, P.; Lucas, A.; Zhang, X.B.; Zhang, X.F.; Bernaerts, D.; Van Tendeloo, G.; Amelinckx, S.; van Landuyt, J. |
The study of carbon nanotubes produced by catalytic method |
1994 |
Chemical physics letters |
223 |
405 |
UA library record; WoS full record; WoS citing articles |
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Nistor, L.; Bender, H.; Vantomme, A.; Wu, M.F.; van Landuyt, J.; O'Donnell, K.P.; Martin, R.; Jacobs, K.; Moerman, I. |
Direct evidence of spontaneous quantum dot formation in a thick InGaN epilayer |
2000 |
Applied physics letters |
77 |
44 |
UA library record; WoS full record; WoS citing articles |
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Frangis, N.; van Landuyt, J.; Lartiprete, R.; Martelli, S.; Borsella, E.; Chiussi, S.; Castro, J.; Leon, B. |
High resolution electron microscopy and X-ray photoelectron spectroscopy studies of heteroepitaxial SixGe1-x alloys produced through laser induced processing |
1998 |
Applied physics letters |
72 |
16 |
UA library record; WoS full record; WoS citing articles |
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Cloetens, P.; Ludwig, W.; Baruchel, J.; van Dyck, D.; van Landuyt, J.; Guigay, J.P.; Schlenker, M. |
Holotomography: quantitative phase tomography with micrometer resolution using hard synchrotron radiation X-rays |
1999 |
Applied physics letters |
75 |
481 |
UA library record; WoS full record; WoS citing articles |
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Dobbelaere, W.; de Boeck, J.; Heremans, P.; Mertens, R.; Borghs, G.; Luyten, W.; van Landuyt, J. |
InAs p-n diodes grown on GaAs and GaAs-coated Si by molecular beam epitaxy |
1992 |
Applied physics letters |
60 |
20 |
UA library record; WoS full record; WoS citing articles |
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Dobbelaere, W.; de Boeck, J.; Heremans, P.; Mertens, R.; Borghs, G.; Luyten, W.; van Landuyt, J. |
InAs0.85Sb0.15 infrared photodiodes grown on GaAs and GaAs-coated Si by molecular beam epitaxy |
1992 |
Applied physics letters |
600 |
32 |
UA library record; WoS full record; WoS citing articles |
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Li, H.; Bender, H.; Conard, T.; Maex, K.; Gutakovskii, A.; van Landuyt, J.; Froyen, L. |
Interaction of a Ti-capped Co thin film with Si3N4 |
2000 |
Applied physics letters |
77 |
3 |
UA library record; WoS full record; WoS citing articles |
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Fang, P.a.; Gu, H.; Wang, P.l.; Van Landuyt, J.; Vleugels, J.; Van der Biest, O.; |
Effect of powder coating on stabilizer distribution in CeO2-stabilized ZrO2 ceramics |
2005 |
Journal of the American Ceramic Society |
88 |
11 |
UA library record; WoS full record; WoS citing articles |
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Van Renterghem, W.; Schryvers, D.; van Landuyt, J.; Bollen, D.; Van Roost, C.; De Keyzer, R.B. |
Defect induced thickness growth in silver chloride (111) tabular crystals: a TEM study |
2000 |
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UA library record; WoS full record; |
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Van Renterghem, W.; Karthauser, S.; Schryvers, D.; van Landuyt, J.; De Keyzer, R.; Van Roost, C. |
The influence of the precipitation method on defect formation in multishell AgBrI (111) tabular crystals |
2000 |
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UA library record; WoS full record; |
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Hens, S.; Bender, H.; Donaton, R.A.; Maex, K.; Vanhaelemeersch, S.; van Landuyt, J. |
EFTEM study of plasma etched low-k Si-O-C dielectrics |
2001 |
Institute of physics conference series
T2 – Royal-Microscopical-Society Conference on Microscopy of Semiconducting, Materials, MAR 25-29, 2001, UNIV OXFORD, OXFORD, ENGLAND |
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UA library record; WoS full record; |
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Stuer, C.; Steegen, A.; van Landuyt, J.; Bender, H.; Maex, K. |
Characterisation of the local stress induced by shallow trench isolation and CoSi2 silicidation |
2001 |
Institute of physics conference series |
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UA library record; WoS full record; |
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Nistor, L.; Bender, H.; van Landuyt, J.; Nemeth, S.; Boeve, H.; De Boeck, J.; Borghs, G. |
HREM investigation of a Fe/GaN/Fe tunnel junction |
2001 |
Institute of physics conference series
T2 – Royal-Microscopical-Society Conference on Microscopy of Semiconducting, Materials, MAR 25-29, 2001, Univ of Oxford, Oxford, England |
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UA library record; WoS full record; |
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Fedina, L.; Gutakovskii, A.; Aseev, A.; van Landuyt, J.; Vanhellemont, J. |
Clustering of vacancies on {113} planes in Si layers close to Si-Si3N4 interfaces and further aggregation of self-interstitials inside vacancy clusters during electron irradiation |
1999 |
Institute of physics conference series
T2 – Conference on Microscopy of Semiconducting Materials, MAR 22-25, 1999, UNIV OXFORD, OXFORD, ENGLAND |
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UA library record; WoS full record; |
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Rembeza, S.I.; Loginov, V.A.; Svistova, T.V.; Podkopaeva, O.I.; Rembeza, E.S.; van Landuyt, J. |
Laser thermotreatment of the SnO2layers |
1998 |
Eurosensors XII, vols 1 and 2 |
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UA library record; WoS full record; |
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Tokei, Z.; Lanckmans, F.; van den Bosch, G.; Van Hove, M.; Maex, K.; Bender, H.; Hens, S.; van Landuyt, J. |
Reliability of copper dual damascene influenced by pre-clean |
2002 |
Analysis Of Integrated Circuits |
|
5 |
UA library record; WoS full record; WoS citing articles |
|
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Schryvers, D.; Van Landuyt, J. |
Electron microscopy study of twin sequences and branching in NissAl34 3R martensite |
1992 |
ICOMAT |
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Goessens, C.; Schryvers, D.; van Landuyt, J.; Amelinckx, S.; Geuens, I.; Gijbels, R.; Jacob, W.; Verbeeck, A.; de Keyzer, R. |
Characterization of crystal defects and analysis of iodide distribution in mixed tabular silver halide grains by conventional transmission electron microscopy, X-ray diffractometry and back-scattered electron imaging |
1991 |
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UA library record |
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