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Author |
Wang, Z.; Zhang, Y.; Neyts, E.C.; Cao, X.; Zhang, X.; Jang, B.W.-L.; Liu, C.-jun |
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Title |
Catalyst preparation with plasmas : how does it work? |
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A1 Journal article |
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Year |
2018 |
Publication |
ACS catalysis |
Abbreviated Journal |
Acs Catal |
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Volume |
8 |
Issue |
3 |
Pages |
2093-2110 |
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Keywords |
A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT) |
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Abstract |
Catalyst preparation with plasmas is increasingly attracting interest. A plasma is a partially ionized gas, consisting of electrons, ions, molecules, radicals, photons, and excited species, which are all active species for catalyst preparation and treatment. Under the influence of plasma, nucleation and crystal growth in catalyst preparation can be very different from those in the conventional thermal approach. Some thermodynamically unfavorable reactions can easily take place with plasmas. Compounds such as sulfides, nitrides, and phosphides that are produced under harsh conditions can be synthesized by plasma under mild conditions. Plasmas can produce catalysts with smaller particle sizes and controllable structure. Plasma is also a facile tool for reduction, oxidation, doping, etching, coating, alloy formation, surface treatment, and surface cleaning in a simple and direct way. A rapid and convenient plasma template removal has thus been established for zeolite synthesis. It can operate at room temperature and allows the catalyst preparation on temperature-sensitive supporting materials. Plasma is typically effective for the production of various catalysts on metallic substrates. In addition, plasma-prepared transition-metal catalysts show enhanced low-temperature activity with improved stability. This provides a useful model catalyst for further improvement of industrial catalysts. In this review, we aim to summarize the recent advances in catalyst preparation with plasmas. The present understanding of plasma-based catalyst preparation is discussed. The challenges and future development are addressed. |
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Publisher |
Amer chemical soc |
Place of Publication |
Washington |
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Wos |
000426804100055 |
Publication Date |
2018-01-29 |
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Edition |
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ISSN |
2155-5435 |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
10.614 |
Times cited |
81 |
Open Access |
Not_Open_Access |
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Notes |
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Approved |
Most recent IF: 10.614 |
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Call Number |
UA @ lucian @ c:irua:150880 |
Serial |
4963 |
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Author |
Zhang, Y.; Grunewald, L.; Cao, X.; Abdelbarey, D.; Zheng, X.; Rugeramigabo, E.P.; Verbeeck, J.; Zopf, M.; Ding, F. |
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Title |
Unveiling the 3D morphology of epitaxial GaAs/AlGaAs quantum dots |
Type |
A1 Journal article |
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Year |
2024 |
Publication |
Nano letters |
Abbreviated Journal |
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Volume |
24 |
Issue |
33 |
Pages |
10106-10113 |
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Keywords |
A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT) |
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Abstract |
Strain-free GaAs/AlGaAs semiconductor quantum dots (QDs) grown by droplet etching and nanohole infilling (DENI) are highly promising candidates for the on-demand generation of indistinguishable and entangled photon sources. The spectroscopic fingerprint and quantum optical properties of QDs are significantly influenced by their morphology. The effects of nanohole geometry and infilled material on the exciton binding energies and fine structure splitting are well-understood. However, a comprehensive understanding of GaAs/AlGaAs QD morphology remains elusive. To address this, we employ high-resolution scanning transmission electron microscopy (STEM) and reverse engineering through selective chemical etching and atomic force microscopy (AFM). Cross-sectional STEM of uncapped QDs reveals an inverted conical nanohole with Al-rich sidewalls and defect-free interfaces. Subsequent selective chemical etching and AFM measurements further reveal asymmetries in element distribution. This study enhances the understanding of DENI QD morphology and provides a fundamental three-dimensional structural model for simulating and optimizing their optoelectronic properties. |
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https://www.webofscience.com/api/gateway?GWVersion=2&SrcApp=brocade2&SrcAuth=WosAPI&KeyUT=WOS:001280 |
Publication Date |
2024-07-25 |
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Edition |
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ISSN |
1530-6984 |
ISBN |
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Additional Links |
UA library record; WoS full record |
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Impact Factor |
10.8 |
Times cited |
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Open Access |
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Notes |
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Approved |
Most recent IF: 10.8; 2024 IF: 12.712 |
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Call Number |
UA @ admin @ c:irua:207525 |
Serial |
9326 |
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Permanent link to this record |
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Author |
Zhang, Y.; Grünewald, L.; Cao, X.; Abdelbarey, D.; Zheng, X.; Rugeramigabo, E.P.; Zopf, M.; Verbeeck, J.; Ding, F. |
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Title |
Supplementary Information and Data for “Unveiling the 3D Morphology of Epitaxial GaAs/AlGaAs Quantum Dots” |
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Year |
2024 |
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Keywords |
Dataset; Engineering sciences. Technology; Electron microscopy for materials research (EMAT) |
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Abstract |
Raw and processed TEM and AFM data for the article Unveiling the 3D Morphology of Epitaxial GaAs/AlGaAs Quantum Dots. |
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Additional Links |
UA library record |
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Impact Factor |
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Open Access |
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Notes |
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Approved |
Most recent IF: NA |
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Call Number |
UA @ admin @ c:irua:208086 |
Serial |
9319 |
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Permanent link to this record |