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Author Stuer, C.; Steegen, A.; van Landuyt, J.; Bender, H.; Maex, K.
Title Characterisation of the local stress induced by shallow trench isolation and CoSi2 silicidation Type A1 Journal article
Year 2001 Publication Institute of physics conference series Abbreviated Journal
Volume Issue 169 Pages 481-484
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract With further down-scaling below 0.25mum technologies, CoSi2 is replacing TiSi2 because of its superior formation chemistry on narrow lines and favourable stress behaviour. Shallow trench isolation (STI) is used as the isolation technique in these technologies. In this study, convergent beam electron diffraction (CBED) measurements and finite element modelling (FEM) are performed to evaluate the local stress components in the silicon substrate, induced in STI structures with a 45 nm or a 85 nm CoSi2 silicidation. High compressive stresses in the active area and tensile stress around the trench corners are observed.
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Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN (up) 0-7503-0818-4 ISBN Additional Links UA library record; WoS full record;
Impact Factor Times cited Open Access
Notes Approved Most recent IF: NA
Call Number UA @ lucian @ c:irua:95163 Serial 311
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