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| Author | Stuer, C.; Steegen, A.; van Landuyt, J.; Bender, H.; Maex, K. | ||||
| Title | Characterisation of the local stress induced by shallow trench isolation and CoSi2 silicidation | Type | A1 Journal article | ||
| Year | 2001 | Publication | Institute of physics conference series | Abbreviated Journal | |
| Volume | Issue | 169 | Pages | 481-484 | |
| Keywords | A1 Journal article; Electron microscopy for materials research (EMAT) | ||||
| Abstract | With further down-scaling below 0.25mum technologies, CoSi2 is replacing TiSi2 because of its superior formation chemistry on narrow lines and favourable stress behaviour. Shallow trench isolation (STI) is used as the isolation technique in these technologies. In this study, convergent beam electron diffraction (CBED) measurements and finite element modelling (FEM) are performed to evaluate the local stress components in the silicon substrate, induced in STI structures with a 45 nm or a 85 nm CoSi2 silicidation. High compressive stresses in the active area and tensile stress around the trench corners are observed. | ||||
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| Publisher | Place of Publication | Editor | |||
| Language | Wos | Publication Date | 0000-00-00 | ||
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| Series Volume | Series Issue | Edition | |||
ISSN  |
0-7503-0818-4 | ISBN | Additional Links | UA library record; WoS full record; | |
| Impact Factor | Times cited | Open Access | |||
| Notes | Approved | Most recent IF: NA | |||
| Call Number | UA @ lucian @ c:irua:95163 | Serial | 311 | ||
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