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Author | Van Daele, B.; Van Tendeloo, G.; Derluyn, J.; Shrivastava, P.; Lorenz, A.; Leys, M.R.; Germain, M.; | ||||
Title | Mechanism for Ohmic contact formation on Si3N4 passivated AlGaN/GaN high-electron-mobility transistors | Type | A1 Journal article | ||
Year | 2006 | Publication | Applied physics letters | Abbreviated Journal | Appl Phys Lett |
Volume | 89 | Issue | 20 | Pages | Artn 201908 |
Keywords | A1 Journal article; Electron microscopy for materials research (EMAT) | ||||
Abstract | |||||
Address | |||||
Corporate Author | Thesis | ||||
Publisher | American Institute of Physics | Place of Publication | New York, N.Y. | Editor | |
Language | Wos | 000242100200030 | Publication Date | 2006-11-16 | |
Series Editor | Series Title | Abbreviated Series Title | |||
Series Volume | Series Issue | Edition | |||
ISSN ![]() |
0003-6951; | ISBN | Additional Links | UA library record; WoS full record; WoS citing articles | |
Impact Factor | 3.411 | Times cited | 15 | Open Access | |
Notes | Iap V-1; Fwo | Approved | Most recent IF: 3.411; 2006 IF: 3.977 | ||
Call Number | UA @ lucian @ c:irua:61919 | Serial | 1978 | ||
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