“Comparative study of structural properties and photoluminescence in InGaN layers with a high In content”. Vantomme A, Wu MF, Hogg S, van Landuyt J, et al, Internet journal of nitride semiconductor research
T2 –, Symposium on GaN and Related Alloys Held at the MRS Fall Meeting, NOV 29-DEC 03, 1999, BOSTON, MASSACHUSETTS 5, art. no.-W11.38 (2000)
Abstract: Rutherford backscattering and channeling spectrometry (RBS), photoluminescence (PL) spectroscopy and transmission electron microscopy (TEM) have been used to investigate macroscopic and microscopic segregation in MOCVD grown InGaN layers. The PL peak energy and In content (measured by RES) were mapped at a large number of distinct points on the samples. An indium concentration of 40%, the highest measured in this work, corresponds to a PL peak of 710 nn strongly suggesting that the light-emitting regions of the sample me very indium-rich compared to the average measured by RES. Cross-sectional TEM observations show distinctive layering of the InGaN films. The TEM study further reveals that these layers consist of amorphous pyramidal contrast features with sizes of order 10 nm The composition of these specific contrast features is shown to be In-rich compared to the nitride matrix.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
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“Comparison of As- and P-based metamorphic buffers for high performance InP heterojunction bipolar transistor and high electron mobility transistor applications”. Lubyshev D, Fastenau JM, Fang X-M, Wu Y, Doss C, Snyder A, Liu WK, Lamb MSM, Bals S, Song C, Journal of vacuum science &, technology. B. Microelectronics and nanometer structures. Processing, measurement and phenomena 22, 1565 (2004). http://doi.org/10.1116/1.1691412
Abstract: Metamorphic buffers (M-buffers) consisting of graded InAlAs or bulk InP were employed for the production of InP-based epiwafers on GaAs substrates by molecular-beam epitaxy. The graded InAlAs is the standard for production metamorphic high electron mobility transistors (M-HEMTs), while the bulk InP offers superior thermal properties for higher current density circuits. The surface morphology and crystal structure of the two M-buffers showed different relaxation mechanisms. The graded InAlAs gave a cross-hatched pattern with nearly full relaxation and very effective dislocation filtering, while the bulk InP had a uniform isotropic surface with dislocations propagating further up towards the active layers. Both types of M-buffers had atomic force microscopy root-mean-square roughness values around 2030 Å. The Hall transport properties of high electron mobility transistors (HEMTs) grown on the InAlAs M-buffer, and a baseline HEMT grown lattice matched on InP, both had room-temperature mobilities >10 000 cm2/V s, while the M-HEMT on the InP M-buffer showed a decrease to 9000 cm2/V s. Similarly, the dc parameters of a double heterojunction bipolar transistor (DHBT) grown on the InAlAs M-buffer were much closer to the baseline heterojunction bipolar transistor than a DHBT grown on the InP M-buffer. A high breakdown voltage of 11.3 V was achieved on an M-DHBT with the InAlAs M-buffer. We speculate that the degradation in device characteristics on the InP M-buffer was related to the incomplete dislocation filtering.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 25
DOI: 10.1116/1.1691412
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“Controlled formation of amine-templated mesostructured zirconia with remarkably high thermal stability”. Cassiers K, Linssen T, Aerts K, Cool P, Lebedev O, Van Tendeloo G, van Grieken R, Vansant EF, Journal of materials chemistry 13, 3033 (2003). http://doi.org/10.1039/b310200a
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT); Laboratory of adsorption and catalysis (LADCA); AXES (Antwerp X-ray Analysis, Electrochemistry and Speciation)
Times cited: 26
DOI: 10.1039/b310200a
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“Cryo-electron spectroscopic imaging, electron energy-loss spectroscopy and energy-dispersive X-ray analysis of Ag(Br,I) nano- and microcrystals”. Oleshko V, Gijbels R, Jacob W, van Daele A, Mikrochimica acta: supplementum 15, 87 (1998)
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
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“Crystal structure of the group of optical materials Ln2MeGe4O12 (Me = Ca, Mn)”. Tarakina NV, Zubkov VG, Leonidov II, Tyutunnik AP, Surat LL, Hadermann J, Van Tendeloo G, Zeitschrift für Kristallographie , 401 (2009). http://doi.org/10.1524/zksu.2009.0059
Abstract: The crystal structure of the group of optical materials Ln2MeGe4O12, Ln = Eu, Gd, Dy-Lu, Y; Me = Ca, Mn and of the solid solution (Y1-xErx)2CaGe4O12 (x = 0 – 1), promising materials for photonics, has been studied in detail. The crystal structure of all compounds exhibit two alternating layers: one formed by Ln and Me atoms and another by cyclic [Ge4O12]8- anions.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 7
DOI: 10.1524/zksu.2009.0059
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“Decomposition of a metastable bcc phase in rapidly solidified Ni-9 at.% Zr and Ni-8 at.%X alloys”. Chandrasekaran M, Ghosh G, Schryvers D, de Graef M, Delaey L, Van Tendeloo G, Philosophical magazine: A: physics of condensed matter: defects and mechanical properties 75, 677 (1997)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 5
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“Defect structures in CuZr martensite, studies by CTEM and HRTEM”. Seo JW, Schryvers D, Journal de physique: 4 C5, 149 (1997). http://doi.org/10.1051/jp4:1997523
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 1
DOI: 10.1051/jp4:1997523
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“Design and development of a new program for data processing of mass spectra acquired by means of a high-resolution double-focusing glow-discharge mass spectrometer”. Robben J, Dufour D, Gijbels R, Fresenius' journal of analytical chemistry 370, 663 (2001). http://doi.org/10.1007/s002160100881
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Times cited: 2
DOI: 10.1007/s002160100881
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“The determination of the interface structure between ionocovalent compounds: the general case study of the Al2O3/ZrO2 large mis-fit system”. Trolliard G, Benmechta R, Mercurio D, Lebedev OI, Journal of materials chemistry 16, 3640 (2006). http://doi.org/10.1039/b604232e
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 6
DOI: 10.1039/b604232e
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“'Disordered' Ba(Mg1/3Ta2/3)O3 and its ordering transition”. Lei CH, Amelinckx S, Van Tendeloo G, Philosophical magazine: A: physics of condensed matter: defects and mechanical properties 82, 2321 (2002). http://doi.org/10.1080/01418610210138969
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 5
DOI: 10.1080/01418610210138969
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“Do smaller probes in a scanning transmission electron microscope result in more precise measurement of the distances between atom columns?”.Van Aert S, van Dyck D, Philosophical magazine: B: physics of condensed matter: electronic, optical and magnetic properties 81, 1833 (2001). http://doi.org/10.1080/13642810108223121
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab
Times cited: 11
DOI: 10.1080/13642810108223121
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“Effect of annealing on the transformation behavior and mechanical properties of two nanostructured Ti-50.8at.%Ni thin wires produced by different methods”. Wang X, Amin-Ahmadi B, Schryvers D, Verlinden B, Van Humbeeck J, Materials science forum 738/739, 306 (2013). http://doi.org/10.4028/www.scientific.net/MSF.738-739.306
Abstract: A Ti-50.8at.%Ni wire produced using a co-drawing method and a commercial Ti-50.8at.%Ni wire were annealed at different temperatures between 450°C and 700°C. Grains with diameter less than 100nm were revealed by transmission electron microscopy for both wires before annealing treatment. However, the microstructural heterogeneity of the co-drawn wire is more obvious than that of the commercial wire. Multi-stage martensitic transformation was observed in the co-drawn wire, compared with the one-stage A↔M transformation in the commercial wire after annealing at 600°C for 30min. The differences of total elongation, plateau strain and pseudoelastic recoverable strain between the commercial wire and the co-drawn wire were also observed. The differences of the transformation behavior and mechanical properties between the commercial wire and the co-drawn wire are attributed to the microstructural difference between these two wires.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 5
DOI: 10.4028/www.scientific.net/MSF.738-739.306
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“Effect of temperature on the 002 electron structure factor and its consequence for the quantification of ternary and quaternary III-V crystals”. Titantah JT, Lamoen D, Schowalter M, Rosenauer A, Springer proceedings in physics 120, 189 (2008)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
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“The effects of moderate thermal treatments under air on LiFePO4-based nano powders”. Hamelet S, Gibot P, Casas-Cabanas M, Bonnin D, Grey CP, Cabana J, Leriche JB, Rodriguez-Carvajal J, Courty M, Levasseur S, Carlach P, Van Thournout M, Tarascon JM, Masquelier C;, Journal of materials chemistry 19, 3979 (2009). http://doi.org/10.1039/b901491h
Abstract: The thermal behavior under air of LiFePO(4)-based powders was investigated through the combination of several techniques such as temperature-controlled X-ray diffraction, thermogravimetric analysis and Mossbauer and NMR spectroscopies. The reactivity with air at moderate temperatures depends on the particle size and leads to progressive displacement of Fe from the core structure yielding nano-size Fe(2)O(3) and highly defective, oxidized Li(x)Fe(y)PO(4) compositions whose unit-cell volume decreases dramatically when the temperature is raised between 400 and 600 K. The novel LiFePO(4)-like compositions display new electrochemical reactivity when used as positive electrodes in Li batteries. Several redox phenomena between 3.4 V and 2.7 V vs. Li were discovered and followed by in-situ X-ray diffraction, which revealed two distinct solid solution domains associated with highly anisotropic variations of the unit-cell constants.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 93
DOI: 10.1039/b901491h
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“EFTEM study of plasma etched low-k Si-O-C dielectrics”. Hens S, Bender H, Donaton RA, Maex K, Vanhaelemeersch S, van Landuyt J, Institute of physics conference series
T2 –, Royal-Microscopical-Society Conference on Microscopy of Semiconducting, Materials, MAR 25-29, 2001, UNIV OXFORD, OXFORD, ENGLAND , 415 (2001)
Abstract: Materials with low dielectric constant ("low-k'') in combination with Cu metallization are replacing the oxide based dielectrics with Al metallization in future generations of micro-electronic devices. In this work, a carbon doped oxide low-k dielectric material is studied after different kinds of etch/strip steps in single damascene Cu. filled line structures. Interline capacitance measurements indicate a dependence of the dielectric constant on the strip conditions. EFTEM is used to study the composition of the dielectric material and the modification of the low-k material at the sidewall of the etched structures for the various treatment conditions.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
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“Electric charges in superconducting mesoscopic samples”. Yampolskii SV, Baelus BJ, Peeters FM, Kolacek J, Czechoslovak journal of physics
T2 –, 11th Czech and Slovak Conference on Magnetism (CSMAG 01), AUG 20-23, 2001, KOSICE, SLOVAKIA 52, 303 (2002). http://doi.org/10.1023/A:1014412905806
Abstract: The distribution of the electric charge density in mesoscopic superconducting disks and cylinders is studied within the phenomenological Ginzburg-Landau approach. We found that, even in the Meissner state the mesoscopic sample exhibits a non-uniform charge distribution such that a region near the sample edge becomes negatively charged. When vortices are inside the sample there is a superposition of the negative charge located at the vortex core and this Meissner charge, and, as a result, the charge at the sample edge changes sign as a function of the applied magnetic field.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
DOI: 10.1023/A:1014412905806
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“Electron diffraction refinement of the TiNi(Fe) R-phase structure”. Schryvers D, Potapov P, Journal de physique 112, 751 (2003). http://doi.org/10.1051/jp4:2003991
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 7
DOI: 10.1051/jp4:2003991
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“Electron-diffraction structure refinement of Ni4Ti3 precipitates in Ni52Ti48”. Tirry W, Schryvers D, Jorissen K, Lamoen D, Acta crystallographica: section B: structural science 62, 966 (2006). http://doi.org/10.1107/S0108768106036457
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 30
DOI: 10.1107/S0108768106036457
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“Electron microscopy investigation of ternary \gamma-brass-type precipitation in a Ni39.6Mn47.5Ti12.9 alloy”. Seo JW, Schryvers D, Vermeulen W, Richard O, Potapov P, Philosophical magazine: A: physics of condensed matter: defects and mechanical properties 79, 1279 (1999). http://doi.org/10.1080/01418619908210361
Abstract: Homogenized Ni39.6Mn47.5T12.9 material was investigated by different electron microscopy techniques. Apart from the martensite precursor distortions typical for B2 phase alloys undergoing a thermoelastic martensitic transformation upon cooling, coherent dodecahedron-shaped precipitates with sizes between 20 and 100 nm and faceted by lozenge shapes of {110}-type planes are observed. Selected-area and microdiffraction patterns reveal an overall unit cell with a size of 3 x 3 x 3 units of the bcc lattice of the matrix and a body-centred symmetry without screw axes. Finally a ternary gamma-brass-type atomic structure of space group 14(3) over bar m is suggested for these precipitates in accordance with the obtained symmetry constraints, the energy-dispersive X-ray measurements and high-resolution transmission electron microscopy images. This is the first time this type of structure is found in an alloy completely consisting of transition-metal elements.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT); Laboratory Experimental Medicine and Pediatrics (LEMP)
Times cited: 3
DOI: 10.1080/01418619908210361
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“Electron microscopy studies of martensite microstructures”. Schryvers D, Journal de physique: 4 C5, 109 (1997). http://doi.org/10.1051/jp4:1997517
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 2
DOI: 10.1051/jp4:1997517
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“EM investigation of precursors and precipitation in a Ni39.6Mn47.5Ti12.9 alloy”. Seo JW, Schryvers D, Vermeulen W, Richard O, Potapov P, Philosophical magazine: A: physics of condensed matter: defects and mechanical properties 79, 1279 (1999)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 3
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“Enhancement of critical magnetic field in superconducting nanostructures”. Fomin VM, Devreese JT, Misko VR, 1, 134 (2002)
Keywords: A1 Journal article; Electron Microscopy for Materials Science (EMAT);
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“Epitaxial growth of \beta-SiC on ion-beam synthesized \beta-SiC : structural characterization”. Romano-Rodriguez A, Perez-Rodriguez A, Serre C, van Landuyt J, et al, Materials science forum
T2 –, International Conference on Silicon Carbide and Related Materials, OCT 10-15, 1999, RES TRIANGLE PK, NORTH CAROLINA 338-3, 309 (2000)
Abstract: In this work we present for the first time, to our knowledge, the CVD epitaxial growth of beta -SiC using an ion beam synthesized (IBS) beta -SiC layer as seed, which has been formed by multiple implantation into Si wafers at 500 degreesC. The ion beam synthesized continuous layer is constituted by beta -SiC nanocrystals that are well oriented relative to the silicon substrate. Comparison of the epitaxial growth on these samples with that on silicon test samples, both on and off-axis, is performed. The results show that the epitaxial growth can be achieved on the IBS samples without the need of the carbonization step and that the structural quality of the CVD layer is comparable to that obtained on a carbonized silicon sample. Improvement of the quality of the deposited layer is proposed.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 2
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“Equations of state of tantalum and plutonium in a spherical cell approximation and at extremely high pressures”. Leys FE, March NH, Lamoen D, van Doren VE, 22, 217 (2002). http://doi.org/10.1080/08957950290011482
Keywords: A1 Journal article; Electron Microscopy for Materials Science (EMAT);
DOI: 10.1080/08957950290011482
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“Exciton states and magnetooptical transitions in stacks of InGaAs/GaAs self-assembled quantum rings”. Tadić, M, Peeters FM, AIP conference proceedings 893, 851 (2007)
Abstract: Electron, hole, and exciton states in the stacks composed of three strained (InGa)As quantum rings were computed. We found considerable influence of strain on both the single particle and exciton spectra, while the oscillator strength for exciton recombination is reduced by the magnetic field.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
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“Excitons and charged excitons in quantum wells”. Riva C, Peeters FM, Varga K, Physica status solidi: A: applied research 178, 513 (2000)
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Times cited: 12
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“Excitons and trions in cylindrical nanowires with dielectric mismatch”. Slachmuylders AF, Partoens B, Magnus W, Peeters FM, Physica status solidi: C: conferences and critical reviews 5, 2416 (2008). http://doi.org/10.1002/pssc.200777650
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Times cited: 3
DOI: 10.1002/pssc.200777650
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“Extended defects formation in Si crystals by clustering of intrinsic point defects studied by in-situ electron irradiation in an HREM”. Fedina L, Gutakovskii A, Aseev A, van Landuyt J, Vanhellemont J, Physica status solidi: A: applied research
T2 –, International Conference on Extended Defects in Semiconductors (EDS 98), Sept. 06-11, 1998, Jaszowiec, Poland 171, 147 (1999). http://doi.org/10.1002/(SICI)1521-396X(199901)171:1<147::AID-PSSA147>3.0.CO;2-U
Abstract: In situ irradiation experiments in a high resolution electron microscope JEOL-4000EX at room temperature resulted in discovery of the isolated and combined clustering of vacancies and self-interstitial atoms on {111}- and {113}-habit planes both leading to an extended defect formation in Si crystals. The type of the defect is strongly affected by the type of supersaturation of point defects depending on the crystal thickness during electron irradiation. Because of the existence of energy barriers against recombination of interstitials with the extended aggregates of vacancies, a large family of intermediate defect configurations (IDCs) is formed on {113}- and {111}-habit planes at a low temperature under interstitial supersaturation in addition to the well-known {133}-defects of interstitial type. The formation of metastable IDCs inside vacancy aggregates prevents a way of recombination of defects in extended shape.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 40
DOI: 10.1002/(SICI)1521-396X(199901)171:1<147::AID-PSSA147>3.0.CO;2-U
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“Extended defects formation in Si crystals by clustering of intrinsic point defects studied by in-situ irradiation in an HREM”. Fedina L, Gutakovskii A, Aseev A, van Landuyt J, Vanhellemont J, Physica status solidi: A: applied research 171, 147 (1999)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 40
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“Extracellular matrix protein 1 (ECM1) has angiogenic properties and is expressed by breast tumor cells”. Han Z, Ni J, Smits P, Underhill C, Xie B, Chen Y, Liu N, Tylzanowski P, Parmelee D, Feng P, Ding I, Gao F, Gentz R, Huylebroeck D, Merregaert J, Zhang L, The FASEB journal 15, 988 (2001). http://doi.org/10.1096/fj.99-0934com
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 94
DOI: 10.1096/fj.99-0934com
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