Abstract: We investigate the possibility to laterally confine surface electrons on a liquid helium surface by inserting magnetic discs and stripes which generate nonhomogeneous magnetic field profiles. (C) 2002 Elsevier Science B.V. All rights reserved.

Abstract: Transport properties of the 2DEG are studied in the presence of a normal magnetic field B and of a weak, two-dimensional periodic potential modulation. A tight-binding treatment has shown that each Landau level splits into several subbands with exponentially small gaps between them. Assuming the latter are closed due to disorder gives analytical wave functions and simplifies the evaluation of the magnetoresistance tensor p(muv) The relative phase of the oscillations in p(xx) and p(yy) depends on the modulation strengths and periods. For short periods less than or equal to 100 nm, in addition to the Weiss oscillations, the collisional contribution to the conductivity and the corresponding resistivity contribution show prominent peaks when one flux quantum h/e passes through an integral number of unit cells in good agreement with experiments. For periods 300-400 nm long used in early experiments, these peaks occur at fields 10-25 times smaller than those of the Weiss oscillations and are not resolved. (C) 2003 Elsevier B.V. All rights reserved.

Abstract: Exciton states in self-assembled InP/In0.49Ga0.51P quantum dots subject to magnetic fields up to 50T are calculated. Strain and band mixing are explicitly taken into account in the single-particle models of the electronic structure, while an exact diagonalization approach is adopted to compute the exciton states. Reasonably good agreement with magneto-photoluminescence measurements on InP self-assembled quantum dots is found. As a result of the polarization and angular momentum sensitive selection rules, the exciton ground state is dark. For in-plane polarized light, the magnetic field barely affects the exciton spatial localization, and consequently the exciton oscillator strength for recombination increases only slightly with increasing field. For z polarized light, a sharp increase of the oscillator strength beyond 30 T is found which is attributed to the enhanced s character of the relevant portion of the exciton wave function. (C) 2004 Elsevier B.V. All rights reserved.

Abstract: We study the ground and first excited states of the neutral and charged shallow donor system confined in a GaAs quantum well (QW) along one direction and by a parabolic potential in the plane perpendicular to the QW. The influence of an external perpendicular magnetic field and of the position of the donor on the energy of the states is studied. We investigate the dependence of the ground and excited states of the negatively charged donor on the confinement potential and external magnetic field. When the donor is displaced from the center of the QW the presence of the lateral confinement shifts the magnetic field induced angular momentum transitions and shifts the unbinding to higher magnetic field. (C) 2003 Published by Elsevier B.V.

Abstract: We report the suppression of the Hall effect in a mesoscopic Hall cross with a strong magnetic field only in the centre and vanishingly small outside, The local magnetic field is produced by placing Dy pillar on top of a structure with a high-mobility two-dimensional electron gas. The effect is found to be due to a sharp increase of the number of back-scattered and quasi-localised electron orbits. The possibility of localising electrons inside the magnetic inhomogeneity region is discussed. (C) 2002 Elsevier Science B.V. All rights reserved.

Abstract: Density-functional theory in combination with the nonequilibrium Green's function formalism is used to study the effect of substitutional doping on the electronic transport properties of hydrogen passivated zig-zag graphene nanoribbon devices. B, N and Si atoms are used to substitute carbon atoms located at the center or at the edge of the sample. We found that Si -doping results in better electronic transport as compared to the other substitutions. The transmission spectrum also depends on the location of the substitutional dopants: for single atom doping the largest transmission is obtained for edge substitutions, whereas substitutions in the middle of the sample give larger transmission for double carbon substitutions. The obtained results are explained in terms of electron localization in the system due to the presence of impurities. (C) 2016 Elsevier B.V. All rights reserved.

Abstract: Structural, mechanical and electronic properties of two-dimensional single-layer hexagonal structures in the (111) crystal plane of IIIAs-ZnS systems (III = B, Ga and In) are studied by first-principles calculations based on density functional theory (DFT). Elastic and phonon dispersion relation display that 2D h-IIIAs systems (III = B, Ga and In) are both mechanical and dynamically stable. Electronic structures analysis show that the semiconducting nature of the 3D-IIIAs compounds is retained by their 2D single layer counterpart. Furthermore, density of states reveals the influence of sigma and pi bonding in the most stable geometry (planar or buckled) for 2D h-IIIAs systems. Calculations of elastic constants show that the Young's modulus, bulk modulus and shear modulus decrease for 2D h-IIIAs binary compounds as we move down on the group of elements of the periodic table. In addition, as the bond length between the neighboring cation-anion atoms increases, the 2D h-IIIAs binary compounds display less stiffness and more plasticity. Our findings can be used to understand the contribution of the r and p bonding in the most stable geometry (planar or buckled) for 2D h-IIIAs systems. Structural and electronic properties of h-IIIAs systems as a function of the number of layers have been also studied. It is shown that h-BAs keeps its planar geometry while both h-GAs and h-InAs retained their buckled ones obtained by their single layers. Bilayer h-IIIAs present the same bandgap nature of their counterpart in 3D. As the number of layers increase from 2 to 4, the bandgap width for layered h-IIIAs decreases until they become semimetal or metal. Interestingly, these results are different to those found for layered h-GaN. The results presented in this study for single and few-layer h-IIIAs structures could give some physical insights for further theoretical and experimental studies of 2D h-IIIV-like systems. (C) 2017 Elsevier B.V. All rights reserved.

Abstract: Spin transitions driven by a periodically varying electric potential in dilute fluorinated graphene quantum dots are investigated. Flakes of monolayer graphene as well as electrostatic electron traps induced in bilayer graphene are considered. The stationary states obtained within the tight-binding approach are used as the basis for description of the system dynamics. The dilute fluorination of the top layer lifts the valley degeneracy of the confined states and attenuates the orbital magnetic dipole moments due to current circulation within the flake. The spin-orbit coupling introduced by the surface deformation of the top layer induced by the adatoms allows the spin flips to be driven by the AC electric field. For the bilayer quantum dots the spin flip times is substantially shorter than the spin relaxation. Dynamical effects including many-photon and multilevel transitions are also discussed.