Abstract: The dynamics of electrons and holes propagating through the nano-scaled channels of modern semiconductor devices can be seen as a widespread manifestation of non-equilibrium statistical physics and its ruling principles. In this respect both the devices that are pushing conventional CMOS technology towards the final frontiers of Moores law and the upcoming set of alternative, novel nanostructures grounded on entirely new concepts and working principles, provide an almost unlimited playground for assessing physical models and numerical techniques emerging from classical and quantum mechanical non-equilibrium theory. In this paper we revisit the Boltzmann as well as the WignerBoltzmann equation which offers a valuable platform to study transport of charge carriers taking part in drive currents. We focus on a numerical procedure that regained attention recently as an alternative tool to solve the time-dependent Boltzmann equation for inhomogeneous systems, such as the channel regions of field-effect transistors, and we discuss its extension to the WignerBoltzmann equation. Furthermore, we pay attention to the calculation of tunneling leakage currents. The latter typically occurs in nano-scaled transistors when part of the carrier distribution sustaining the drive current is found to tunnel into the gate due the presence of an ultra-thin insulating barrier separating the gate from the channel region. In particular, we discuss the paradox related to the very existence of leakage currents established by electrons occupying quasi-bound states, while the (real) wave functions of the latter cannot carry net currents. Finally, we describe a simple model to resolve the paradox as well as to estimate gate currents provided the local carrier generation rates largely exceed the tunneling rates.

Abstract: In this work we investigate quantum ballistic transport in ultrasmall junctionless and inversion mode semiconducting nanowire transistors within the framework of the self-consistent Schrödinger-Poisson problem. The quantum transmitting boundary method is used to generate open boundary conditions between the active region and the electron reservoirs. We adopt a subband decomposition approach to make the problem numerically tractable and make a comparison of four different numerical approaches to solve the self-consistent Schrödinger-Poisson problem. Finally we discuss the IV-characteristics for small (r≤5 nm) GaAs nanowire transistors. The novel junctionless pinch-off FET or junctionless nanowire transistor is extensively compared with the gate-all-around (GAA) nanowire MOSFET.

Abstract: <script type='text/javascript'>document.write(unpmarked('The resistive random-access memory (RRAM) device concept is close to enabling the development of a new generation of non-volatile memories, provided that their reliability issues are properly understood. The design of a RRAM operating with extrinsic defects based on metallic inclusions, also called conductive bridge RAM, allows the use of a large spectrum of solid electrolytes. However, when scaled to device dimensions that meet the requirements of the latest technological nodes, the discrete nature of the atomic structure of the materials impacts the device operation. Using density functional theory simulations, we evaluated the migration kinetics of Cu conducting species in amorphous and solid electrolyte materials, and established that atomic disorder leads to a large variability in terms of defect stability and kinetic barriers. This variability has a significant impact on the filament resistance and its dynamics, as evidenced during the formation step of the resistive filament. Also, the atomic configuration of the formed filament can age/relax to another metastable atomic configuration, and lead to a modulation of the resistivity of the filament. All these observations are qualitatively explained on the basis of the computed statistical distributions of the defect stability and on the kinetic barriers encountered in RRAM materials.'));

Abstract: Two state-of-the-art methods for non-invasive visualization of subsurface (or overpainted) pictorial layers present in painted works of art are employed to study Le portrait, painted by Belgian artist Rene Magritte in 1935. X-ray radiography, a commonly used method for the nondestructive inspection of paintings, had revealed the presence of an underlying figurative composition, part of an earlier Magritte painting entitled La pose enchantee (1927) which originally depicted two full length nude female figures with exaggerated facial features. On the one hand, macroscopic X-ray fluorescence analysis (MA-XRF), a method capable of providing information on the distribution of the key chemical elements present in many artists' pigments, was employed. The ability of the X-rays to penetrate the upper layer of paint enabled the imaging of the facial features of the female figure and provided information on Magritte's palette for both surface and hidden composition. On the other hand, visible and near infrared hyperspectral imaging spectroscopies in transmission mode were also used, especially in the area of the table cloth in order to look through the upper representation and reveal the pictorial layer(s) below. MA-XRF provided elemental information on the pigment distributions in both the final painting and the prior whereas the transmission mode provided information related to preparatory sketches as well as revealing differences between the paints used in both compositions. These results illustrate very well the manner in which the two imaging methods complement each other, both in the sense of providing different types of information on the nature and presence of paint components/pigments and in the sense of being optimally suited to easily penetrate through different types of overpaint.

Abstract: The analysis of high-frequency electromagnetic field (HFEMF) effects on the microstructure and electrical properties of Te+ implanted (0 0 1) Si is reported. Cross-sectional high-resolution transmission electron microscopy (XHRTEM) demonstrates the formation of Te nanoclusters (NCs) embedded in the Si layer amorphized by implantation (a-Si) at fluences greater than or equal to 1 x 10(16) cm(-2). Post-implantation treatment with 0.45 MHz HFEMF leads to enlargement of Te NCs, their diffusion and accumulation at the a-Si surface and formation of laterally connected extended tellurium structures above the percolation threshold, appearing at an ion fluence of 1 x 10(17) cm(-2). AC electrical conductivity measurements show nearly four orders of magnitude decrease of impedance resistivity in this case, which is in good agreement with the results of our structural studies. The results obtained are discussed in terms of the two-phase isotropic spinodal structure. (C) 2004 Elsevier Ltd. All rights reserved.

Abstract: The magnetic-field dependence of the energy spectrum of GaAs doped with nitrogen impurities is investigated. Our theoretical model is based on the phenomenological band anticrossing model (BAC) which we extended in order to include the magnetic field and electronphonon interaction. Due to the highly localized nature of the nitrogen state, we find that the energy levels are very different from those of pure GaAs. The polaron correction results in a lower cyclotron resonance energy as compared to pure GaAs. The magneto-absorption spectrum exhibits series of asymmetric peaks close to the cyclotron energy ħωc.

Abstract: We revisit the theory of the pseudo magnetic field as induced by strain in graphene using the tight- binding approach. A systematic expansion of the hopping parameter and the deformation of the lattice vectors is presented from which we obtain an expression for the pseudo magnetic field for low energy electrons. We generalize and discuss previous results and propose a novel effective Hamiltonian. The contributions of the different terms to the pseudo field expression are investigated for a model triaxial strain profile and are compared with the full solution. Our work suggests that the previous proposed pseudo magnetic field expression is valid up to reasonably high strain (15%) and there is no K-dependent pseudo-magnetic field.

Abstract: Spin systems on an f.c.c.-lattice which exhibit phase segregation are studied by means of Monte Carlo simulations. Short-range order, both above and below the segregation temperature, is observed. Experimental evidence for short range order in Ti-V is provided by electron diffraction.