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“Klein tunneling in single and multiple barriers in graphene”. Pereira JM, Peeters FM, Chaves A, Farias GA, Semiconductor science and technology 25, 033002 (2010). http://doi.org/10.1088/0268-1242/25/3/033002
Abstract: We review the transmission properties of carriers interacting with potential barriers in graphene. The tunneling of electrons and holes in quantum structures in graphene is found to display features that are in marked contrast with those of other systems. In particular, the interaction between the carriers with electrostatic potential barriers can be related to the propagation of electromagnetic waves in media with negative refraction indices, also known as metamaterials. This behavior becomes evident as one calculates the time evolution of wavepackets propagating across the barrier interface. In addition, we discuss the effect of trigonal warping on the tunneling through potential barriers.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 2.305
Times cited: 83
DOI: 10.1088/0268-1242/25/3/033002
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“Driven spin transitions in fluorinated single- and bilayer-graphene quantum dots”. Zebrowski DP, Peeters FM, Szafran B, Semiconductor science and technology 32, 065016 (2017). http://doi.org/10.1088/1361-6641/AA6DF4
Abstract: Spin transitions driven by a periodically varying electric potential in dilute fluorinated graphene quantum dots are investigated. Flakes of monolayer graphene as well as electrostatic electron traps induced in bilayer graphene are considered. The stationary states obtained within the tight-binding approach are used as the basis for description of the system dynamics. The dilute fluorination of the top layer lifts the valley degeneracy of the confined states and attenuates the orbital magnetic dipole moments due to current circulation within the flake. The spin-orbit coupling introduced by the surface deformation of the top layer induced by the adatoms allows the spin flips to be driven by the AC electric field. For the bilayer quantum dots the spin flip times is substantially shorter than the spin relaxation. Dynamical effects including many-photon and multilevel transitions are also discussed.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 2.305
DOI: 10.1088/1361-6641/AA6DF4
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“The reduction of the substitutional C content in annealed Si/SiGeC superlattices studied by dark-field electron holography”. Denneulin T, Rouvière JL, Béché, A, Py M, Barnes JP, Rochat N, Hartmann JM, Cooper D, Semiconductor science and technology 26, 1 (2011). http://doi.org/10.1088/0268-1242/26/12/125010
Abstract: Si/Si(1 − x − y)GexCy superlattices are used in the construction of new microelectronic architectures such as multichannel transistors. The introduction of carbon in SiGe allows for compensation of the strain and to avoid plastic relaxation. However, the formation of incoherent β-SiC clusters during annealing limits the processability of SiGeC. This precipitation leads to a modification of the strain in the alloy due to the reduction of the substitutional carbon content. Here, we investigated the strain in annealed Si/Si0.744Ge0.244C0.012 superlattices grown by reduced pressure chemical vapour deposition using dark-field electron holography. The variation of the substitutional C content was calculated by correlating the results with finite-element simulations. The obtained values were then compared with Fourier-transformed infrared spectrometry measurements. It was shown that after annealing for 2 min at 1050 °C carbon no longer has any influence on strain in the superlattice, which behaves like pure SiGe. However, a significant proportion of substitutional C atoms remain in a third-nearest neighbour (3nn) configuration. It was deduced that the influence of 3nn C on strain is negligible and that only isolated atoms have a significant contribution. It was also proposed that the 3nn configuration is an intermediary step during the formation of SiC clusters.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.305
DOI: 10.1088/0268-1242/26/12/125010
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“Strain measurement in semiconductor FinFET devices using a novel moiré, demodulation technique”. Prabhakara V, Jannis D, Béché, A, Bender H, Verbeeck J, Semiconductor science and technology (2019). http://doi.org/10.1088/1361-6641/ab5da2
Abstract: Moiré fringes are used throughout a wide variety of applications in physics and
engineering to bring out small variations in an underlying lattice by comparing with another reference lattice. This method was recently demonstrated in Scanning Transmission Electron Microscopy imaging to provide local strain measurement in crystals by comparing the crystal lattice with the scanning raster that then serves as the reference. The images obtained in this way contain a beating fringe pattern with a local period that represents the deviation of the lattice from the reference. In order to obtain the actual strain value, a region containing a full period of the fringe is required, which results in a compromise between strain sensitivity and spatial resolution. In this paper we propose an advanced setup making use of an optimised scanning pattern and a novel phase stepping demodulation scheme. We demonstrate the novel method on a series of 16 nm Si-Ge semiconductor FinFET devices in which strain plays a crucial role in modulating the charge carrier mobility. The obtained results are compared with both Nano-beam diffraction and the recently proposed Bessel beam diffraction technique. The setup provides a much improved spatial resolution over conventional moiré imaging in STEM while at the same time being fast and requiring no specialised diffraction camera as opposed to the diffraction techniques we compare to.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 2.305
Times cited: 8
DOI: 10.1088/1361-6641/ab5da2
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“Development of a ReaxFF reactive force field for intrinsic point defects in titanium dioxide”. Huygh S, Bogaerts A, van Duin ACT, Neyts EC, Computational materials science 95, 579 (2014). http://doi.org/10.1016/j.commatsci.2014.07.056
Abstract: A reactive ReaxFF force field is developed for studying the influence of intrinsic point defects on the chemistry with TiO2 condensed phases. The force field parameters are optimized to ab initio data for the equations of state, relative phase stabilities for titanium and titanium dioxide, potential energy differences for (TiO2)n-clusters (n = 116). Also data for intrinsic point defects in anatase were added. These data contain formation energies for interstitial titanium and oxygen vacancies, diffusion barriers of the oxygen vacancies and molecular oxygen adsorption on a reduced anatase (101) surface. Employing the resulting force field, we study the influence of concentration of oxygen vacancies and expansion or compression of an anatase surface on the diffusion of the oxygen vacancies. Also the barrier for oxygen diffusion in the subsurface region is evaluated using this force field. This diffusion barrier of 27.7 kcal/mol indicates that the lateral redistribution of oxygen vacancies on the surface and in the subsurface will be dominated by their diffusion in the subsurface, since both this barrier as well as the barriers for diffusion from the surface to the subsurface and vice versa (17.07 kcal/mol and 21.91 kcal/mol, respectively, as calculated with DFT), are significantly lower than for diffusion on the surface (61.12 kcal/mol as calculated with DFT).
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 2.292
Times cited: 15
DOI: 10.1016/j.commatsci.2014.07.056
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“Stability and structures of the CFCC-TmC phases : a first-principles study”. Fang CM, van Huis MA, Zandbergen HW, Computational materials science 51, 146 (2012). http://doi.org/10.1016/j.commatsci.2011.07.017
Abstract: The η-M6C, γ-M23C6, and π-M11C2 phases (M = Cr, Mn and Fe) have complex cubic lattices with lattice parameters of approximately 1.0 nm. They belong to the CFCC-TmC family (complex face-centered cubic transition metal carbides), display a rich variety of crystal structures, and play in important role in iron alloys and steels. Here we show that first-principles calculations predict high stability for the γ-M23C6 and η-M6C phases, and instability for the π-M11C2 phases, taking into account various compositional and structural possibilities. The calculations also show a wide variety in magnetic properties. The Cr-containing phases were found to be non-magnetic and the Fe-phases to be ferromagnetic, while the Mn-containing phases were found to be either ferrimagnetic or non-magnetic. Details of the local atomic structures, and the formation and stability of these precipitates in alloys are discussed.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.292
Times cited: 18
DOI: 10.1016/j.commatsci.2011.07.017
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“Structural, mechanical and electronic properties of two-dimensional structure of III-arsenide (111) binary compounds: An ab-initio study”. Gonzalez-Garcia A, Lopez-Perez W, Rivera-Julio J, Peeters FM, Mendoza-Estrada V, Gonzalez-Hernandez R, Computational materials science 144, 285 (2018). http://doi.org/10.1016/J.COMMATSCI.2017.12.050
Abstract: Structural, mechanical and electronic properties of two-dimensional single-layer hexagonal structures in the (111) crystal plane of IIIAs-ZnS systems (III = B, Ga and In) are studied by first-principles calculations based on density functional theory (DFT). Elastic and phonon dispersion relation display that 2D h-IIIAs systems (III = B, Ga and In) are both mechanical and dynamically stable. Electronic structures analysis show that the semiconducting nature of the 3D-IIIAs compounds is retained by their 2D single layer counterpart. Furthermore, density of states reveals the influence of sigma and pi bonding in the most stable geometry (planar or buckled) for 2D h-IIIAs systems. Calculations of elastic constants show that the Young's modulus, bulk modulus and shear modulus decrease for 2D h-IIIAs binary compounds as we move down on the group of elements of the periodic table. In addition, as the bond length between the neighboring cation-anion atoms increases, the 2D h-IIIAs binary compounds display less stiffness and more plasticity. Our findings can be used to understand the contribution of the r and p bonding in the most stable geometry (planar or buckled) for 2D h-IIIAs systems. Structural and electronic properties of h-IIIAs systems as a function of the number of layers have been also studied. It is shown that h-BAs keeps its planar geometry while both h-GAs and h-InAs retained their buckled ones obtained by their single layers. Bilayer h-IIIAs present the same bandgap nature of their counterpart in 3D. As the number of layers increase from 2 to 4, the bandgap width for layered h-IIIAs decreases until they become semimetal or metal. Interestingly, these results are different to those found for layered h-GaN. The results presented in this study for single and few-layer h-IIIAs structures could give some physical insights for further theoretical and experimental studies of 2D h-IIIV-like systems. (C) 2017 Elsevier B.V. All rights reserved.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 2.292
Times cited: 3
DOI: 10.1016/J.COMMATSCI.2017.12.050
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“Effects of silicon doping on strengthening adhesion at the interface of the hydroxyapatite-titanium biocomposite : a first-principles study”. Grubova IY, Surmeneva MA, Huygh S, Surmenev RA, Neyts EC, Computational materials science 159, 228 (2019). http://doi.org/10.1016/J.COMMATSCI.2018.12.026
Abstract: In this paper we employ first-principles calculations to investigate the effect of substitutional Si doping in the amorphous calcium-phosphate (a-HAP) structure on the work of adhesion, integral charge transfer, charge density difference and theoretical tensile strengths between an a-HAP coating and amorphous titanium dioxide (a-TiO2) substrate systemically. Our calculations demonstrate that substitution of a P atom by a Si atom in a-HAP (a-Si-HAP) with the creation of OH-vacancies as charge compensation results in a significant increase of the bonding strength of the coating to the substrate. The work of adhesion of the optimized Si-doped interfaces reaches a value of up to -2.52 J m(-2), which is significantly higher than for the stoichiometric a-HAP/a-TiO2. Charge density difference analysis indicates that the dominant interactions at the interface have significant covalent character, and in particular two Ti-O and three Ca-O bonds are formed for a-Si-HAP/a-TiO2 and one Ti-O and three Ca-O bonds for a-HAP/a-TiO2. From the stress-strain curve, the Young's modulus of a-Si-HAP/a-TiO2 is calculated to be about 25% higher than that of the a-HAP/a-TiO2, and the yielding stress is about 2 times greater than that of the undoped model. Our calculations therefore demonstrate that the presence of Si in the a-HAP structure strongly alters not only the bioactivity and resorption rates, but also the mechanical properties of the a-HAP/a-TiO2 interface. The results presented here provide an important theoretical insight into the nature of the chemical bonding at the a-HAP/a-TiO2 interface, and are particularly significant for the practical medical applications of HAP-based biomaterials.
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 2.292
Times cited: 1
DOI: 10.1016/J.COMMATSCI.2018.12.026
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“Attitudes of agricultural experts toward genetically modified crops : a case study in Southwest Iran”. Ghanian M, Ghoochani OM, Kitterlin M, Jahangiry S, Zarafshani K, Van Passel S, Azadi H, Science And Engineering Ethics 22, 509 (2016). http://doi.org/10.1007/S11948-015-9653-1
Abstract: The production of genetically modified (GM) crops is growing around the world, and with it possible opportunities to combat food insecurity and hunger, as well as solutions to current problems facing conventional agriculture. In this regard the use of GMOs in food and agricultural applications has increased greatly over the past decade. However, the development of GM crops has been a matter of considerable interest and worldwide public controversy. This, in addition to skepticism, has stifled the use of this practice on a large scale in many areas, including Iran. It stands to reason that a greater understanding of this practice could be formed after a review of the existing expert opinions surrounding GM crops. Therefore, the purpose of this study was to analyze the predictors that influence agricultural experts attitudes toward the development of and policies related to GM crops. Using a descriptive correlational research method, questionnaire data was collected from 65 experts from the Agricultural Organization in the Gotvand district in Southwest Iran. Results indicated that agricultural experts were aware of the environmental benefits and possible risks associated with GM crops. The majority of participants agreed that GM crops could improve food security and accelerate rural development, and were proponents of labeling practices for GM crops. Finally, there was a positive correlation between the perception of benefits and attitudes towards GM crops.
Keywords: A1 Journal article; Economics; Engineering Management (ENM)
Impact Factor: 2.229
Times cited: 5
DOI: 10.1007/S11948-015-9653-1
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“Source/drain materials for Ge nMOS devices: phosphorus activation in epitaxial Si, Ge, Ge1-xSnx and SiyGe1-x-ySnx”. Vohra A, Makkonen I, Pourtois G, Slotte J, Porret C, Rosseel E, Khanam A, Tirrito M, Douhard B, Loo R, Vandervorst W, Ecs Journal Of Solid State Science And Technology 9, 044010 (2020). http://doi.org/10.1149/2162-8777/AB8D91
Abstract: This paper benchmarks various epitaxial growth schemes based on n-type group-IV materials as viable source/drain candidates for Ge nMOS devices. Si:P grown at low temperature on Ge, gives an active carrier concentration as high as 3.5 x 10(20) cm(-3) and a contact resistivity down to 7.5 x 10(-9) Omega.cm(2). However, Si:P growth is highly defective due to large lattice mismatch between Si and Ge. Within the material stacks assessed, one option for Ge nMOS source/drain stressors would be to stack Si:P, deposited at contact level, on top of a selectively grown n-SiyGe1-x-ySnx at source/drain level, in line with the concept of Si passivation of n-Ge surfaces to achieve low contact resistivities as reported in literature (Martens et al. 2011 Appl. Phys. Lett., 98, 013 504). The saturation in active carrier concentration with increasing P (or As)-doping is the major bottleneck in achieving low contact resistivities for as-grown Ge or SiyGe1-x-ySnx. We focus on understanding various dopant deactivation mechanisms in P-doped Ge and Ge1-xSnx alloys. First principles simulation results suggest that P deactivation in Ge and Ge1-xSnx can be explained both by P-clustering and donor-vacancy complexes. Positron annihilation spectroscopy analysis, suggests that dopant deactivation in P-doped Ge and Ge1-xSnx is primarily due to the formation of P-n-V and SnmPn-V clusters. (C) 2020 The Author(s). Published on behalf of The Electrochemical Society by IOP Publishing Limited.
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 2.2
DOI: 10.1149/2162-8777/AB8D91
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“Conversion of platelets into dislocation loops and voidite formation in type IaB diamonds”. Evans T, Kiflawi I, Luyten W, Van Tendeloo G, Woods GS, Proceedings of the Royal Society of London: series A: mathematical and physical sciences 449, 295 (1995). http://doi.org/10.1098/rspa.1995.0045
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.192
Times cited: 32
DOI: 10.1098/rspa.1995.0045
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“Bloch and localized electrons in semiconductor superlattices”. Helm M, Hilber W, Fromherz T, Peeters FM, Alavi K, Pathak RN, Semiconductor science and technology 9, 1989 (1994). http://doi.org/10.1088/0268-1242/9/11S/022
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 2.19
Times cited: 1
DOI: 10.1088/0268-1242/9/11S/022
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“Hot magneto-phonon and electro-phonon resonances in heterostructures”. Peeters FM, Devreese JT, Semiconductor science and technology: B 7, 15 (1992). http://doi.org/10.1088/0268-1242/7/3B/004
Keywords: A1 Journal article; Condensed Matter Theory (CMT); Theory of quantum systems and complex systems
Impact Factor: 2.19
Times cited: 12
DOI: 10.1088/0268-1242/7/3B/004
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“Novel nonlinear transport phenomena in a triangular quantum well”. Kastalsky A, Peeters FM, Chan WK, Florez LT, Harbison JP, Semiconductor science and technology: B 7, 530 (1992). http://doi.org/10.1088/0268-1242/7/3B/138
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 2.19
Times cited: 4
DOI: 10.1088/0268-1242/7/3B/138
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“Warm-electron transport in a two-dimensional semiconductor”. Xu W, Peeters FM, Devreese JT, Semiconductor science and technology 7, 1251 (1992)
Keywords: A1 Journal article; Condensed Matter Theory (CMT); Theory of quantum systems and complex systems
Impact Factor: 2.19
Times cited: 3
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“CdSe quantum dot formation induced by amorphous Se”. Aichele T, Robin I-C, Bougerol C, André, R, Tatarenko S, Van Tendeloo G, Surface science : a journal devoted to the physics and chemistry of interfaces
T2 –, International Conference on NANO-Structures Self Assembling, JUL 02-06, 2006, Aix en Provence, FRANCE 601, 2664 (2007). http://doi.org/10.1016/j.susc.2006.12.001
Abstract: The mechanism allowing the transition from a two-dimensional strained layer of CdSe on ZnSe to self-assembled islands induced by the use of amorphous selenium is still not fully understood. For a better understanding, atomic force microscopy and transmission electron microscopy studies were performed on CdSe films with a thickness close to that for quantum dot formation. Below this thickness, the sample surface results in undulations along the [110] crystal direction, while few quantum dots are situated in the wave valleys. Plan view transmission electron microscopy studies reveal a strong anisotropy of the islands and show that the Se desorption conditions are crucial. (C) 2006 Elsevier B.V. All rights reserved.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.062
DOI: 10.1016/j.susc.2006.12.001
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“Metallic nanoparticles on plasma treated carbon nanotubes : $Nano2hybrids$”. Bittencourt C, Felten A, Douhard B, Colomer J-F, Van Tendeloo G, Drube W, Ghijsen J, Pireaux J-J, Surface science : a journal devoted to the physics and chemistry of interfaces
T2 –, International Conference on NANO-Structures Self Assembling, JUL 02-06, 2006, Aix en Provence, FRANCE 601, 2800 (2007). http://doi.org/10.1016/j.susc.2006.12.045
Abstract: Multi-wall carbon nanotubes (MWCNTs) were decorated with metal clusters by thermal evaporation. Transmission electron microscopy (TEM) shows that the nature and extent of metal coverage can be varied by plasma treating the MWCNT surface. The metal clusters on oxygen plasma treated arc-discharge MWCNTs have a more dense distribution than the clusters evaporated on as-synthesized are-discharge MWCNTs. In contrast, the plasma treatment did not affect the cluster distribution on CVD MWCNTs. Analyses of the valence band and the core levels by X-ray photoelectron spectroscopy suggest poor charge transfer between gold clusters and MWCNTs; on the contrary suggest good charge transfer between Ni clusters and MWCNTs. (c) 2007 Elsevier B. V. All rights reserved.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.062
Times cited: 44
DOI: 10.1016/j.susc.2006.12.045
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“The role of healed N-vacancy defective BC2N sheet and nanotube by NO molecule in oxidation of NO and CO gas molecules”. Nematollahi P, Esrafili MD, Neyts EC, Surface science : a journal devoted to the physics and chemistry of interfaces 672-673, 39 (2018). http://doi.org/10.1016/J.SUSC.2018.03.002
Abstract: In this study, the healing of N-vacancy boron carbonitride nanosheet (NV-BC2NNS) and nanotube (NV-BC2NNT) by NO molecule is studied by means of density functional theory calculations. Two different N-vacancies are considered in each of these structures in which the vacancy site is surrounded by either three B-atoms (NB) or by two B- and one C-atom (NBC). By means of the healed BC2NNS and BC2NNT as a support, the removal of two toxic gas molecules (NO and CO) are applicable. It should be noted that the obtained energy barriers of both healing and oxidizing processes are significantly lower than those of graphene, carbon nanotubes or boron nitride nanostructures. Also, at the end of the oxidation process, the pure BC2NNS or BC2NNT is obtained without any additional defects. Therefore, by using this method, we can considerably purify the defective BC2NNS/BC2NNT. Moreover, according to the thermochemistry calculations we can further confirm that the healing process of the NV-BC2NNS and NV-BC2NNT by NO are feasible at room temperature. So, we can claim that this study could be very helpful in both purifying the defective BC2NNS/BC2NNT while in the same effort removing toxic NO and CO gases.
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 2.062
Times cited: 1
DOI: 10.1016/J.SUSC.2018.03.002
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“Surface functionalization of the honeycomb structure of zinc antimonide (ZnSb) monolayer : a first-principles study”. Bafekry A, Shahrokhi M, Yagmurcukardes M, Gogova D, Ghergherehchi M, Akgenc B, Feghhi SAH, Surface Science 707, 121796 (2021). http://doi.org/10.1016/J.SUSC.2020.121796
Abstract: Structural, electronic, optic and vibrational properties of Zinc antimonide (ZnSb) monolayers and their func-tionalized (semi-fluorinated and fully chlorinated) structures are investigated by means of the first-principles calculations. The phonon dispersion curves reveal the presence of imaginary frequencies and thus confirm the dynamical instability of ZnSb monolayer. The calculated electronic band structure corroborates the metallic character with fully-relativistic calculations. Moreover, we analyze the surface functionalization effect on the structural, vibrational, and electronic properties of the pristine ZnSb monolayer. The semi-fluorinated and fully-chlorinated ZnSb monolayers are shown to be dynamically stable in contrast to the ZnSb monolayer. At the same time, semi-fluorination and fully-chlorination of ZnSb monolayer could effectively modulate the metallic elec-tronic properties of pristine ZnSb. In addition, a magnetic metal to a nonmagnetic semiconductor transition with a band gap of 1 eV is achieved via fluorination, whereas a transition to a semiconducting state with 1.4 eV band gap is found via chlorination of the ZnSb monolayer. According to the optical properties analysis, the first ab-sorption peaks of the fluorinated-and chlorinated-ZnSb monolayers along the in-plane polarization are placed in the infrared range of spectrum, while they are in the middle ultraviolet for the out-of-plane polarization. Interestingly, the optically anisotropic behavior of these novel monolayers along the in-plane polarizations is highly desirable for design of polarization-sensitive photodetectors. The results of the calculations clearly proved that the tunable electronic properties of the ZnSb monolayer can be realized by chemical functionalization for application in the next generation nanoelectronic devices.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 2.062
DOI: 10.1016/J.SUSC.2020.121796
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“Synergy between transmission electron microscopy and powder diffraction : application to modulated structures”. Batuk D, Batuk M, Abakumov AM, Hadermann J, Acta crystallographica: section B: structural science 71, 127 (2015). http://doi.org/10.1107/S2052520615005466
Abstract: The crystal structure solution of modulated compounds is often very challenging, even using the well established methodology of single-crystal X-ray crystallography. This task becomes even more difficult for materials that cannot be prepared in a single-crystal form, so that only polycrystalline powders are available. This paper illustrates that the combined application of transmission electron microscopy (TEM) and powder diffraction is a possible solution to the problem. Using examples of anion-deficient perovskites modulated by periodic crystallographic shear planes, it is demonstrated what kind of local structural information can be obtained using various TEM techniques and how this information can be implemented in the crystal structure refinement against the powder diffraction data. The following TEM methods are discussed: electron diffraction (selected area electron diffraction, precession electron diffraction), imaging (conventional high-resolution TEM imaging, high-angle annular dark-field and annular bright-field scanning transmission electron microscopy) and state-of-the-art spectroscopic techniques (atomic resolution mapping using energy-dispersive X-ray analysis and electron energy loss spectroscopy).
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.032
Times cited: 11
DOI: 10.1107/S2052520615005466
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“Interstitial defects in the van der Waals gap of Bi2Se3”. Callaert C, Bercx M, Lamoen D, Hadermann J, Acta Crystallographica. Section B: Structural Science, Crystal Engineering and Materials (Online) 75, 717 (2019). http://doi.org/10.1107/S2052520619008357
Abstract: Bi<sub>2</sub>Se<sub>3</sub>is a thermoelectric material and a topological insulator. It is slightly conducting in its bulk due to the presence of defects and by controlling the defects different physical properties can be fine tuned. However, studies of the defects in this material are often contradicting or inconclusive. Here, the defect structure of Bi<sub>2</sub>Se<sub>3</sub>is studied with a combination of techniques: high-resolution scanning transmission electron microscopy (HR-STEM), high-resolution energy-dispersive X-ray (HR-EDX) spectroscopy, precession electron diffraction tomography (PEDT), X-ray diffraction (XRD) and first-principles calculations using density functional theory (DFT). Based on these results, not only the observed defects are discussed, but also the discrepancies in results or possibilities across the techniques. STEM and EDX revealed interstitial defects with mainly Bi character in an octahedral coordination in the van der Waals gap, independent of the applied sample preparation method (focused ion beam milling or cryo-crushing). The inherent character of these defects is supported by their observation in the structure refinement of the EDT data. Moreover, the occupancy probability of the defects determined by EDT is inversely proportional to their corresponding DFT calculated formation energies. STEM also showed the migration of some atoms across and along the van der Waals gap. The kinetic barriers calculated using DFT suggest that some paths are possible at room temperature, while others are most probably beam induced.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.032
DOI: 10.1107/S2052520619008357
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“Coupled electron-hole transport: generalized random-phase approximation and density functional theory”. Tso HC, Vasilopoulos P, Peeters FM, Surface science : a journal devoted to the physics and chemistry of interfaces 305, 400 (1994). http://doi.org/10.1016/0039-6028(94)90925-3
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 1.925
Times cited: 5
DOI: 10.1016/0039-6028(94)90925-3
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“Disappearance of magnetophonon resonance at high magnetic fields in GaAs-GaAlAs heterojunctions”. Leadley DR, Nicholas RJ, Singleton J, Xu W, Peeters FM, Devreese JT, van Bockstal L, Herlach F, Perenboom JAAJ, Harris JJ, Foxon CT, Surface science : a journal devoted to the physics and chemistry of interfaces 305, 327 (1994). http://doi.org/10.1016/0039-6028(94)90910-5
Keywords: A1 Journal article; Condensed Matter Theory (CMT); Theory of quantum systems and complex systems
Impact Factor: 1.925
Times cited: 1
DOI: 10.1016/0039-6028(94)90910-5
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“Electrons in a periodic magnetic field”. Ibrahim IS, Peeters FM, Surface science : a journal devoted to the physics and chemistry of interfaces 361/362, 341 (1996). http://doi.org/10.1016/0039-6028(96)00417-7
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 1.925
Times cited: 3
DOI: 10.1016/0039-6028(96)00417-7
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“EM, XPS and LEED study of deposition of Ag on hydrogenated Si substrate prepared by wet chemical treatments”. Zhang XB, Vasiliev AL, Van Tendeloo G, He Y, Yu L-M, Thiry PA, Surface science : a journal devoted to the physics and chemistry of interfaces 340, 317 (1995). http://doi.org/10.1016/0039-6028(95)00699-0
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.925
Times cited: 11
DOI: 10.1016/0039-6028(95)00699-0
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“Infrared-spectroscopy of subbands, minibands, and donors in GaAs/AlGaAs superlattices”. Helm M, Peeters FM, de Rosa F, Colas E, Harbison JP, Florez LT, Surface science : a journal devoted to the physics and chemistry of interfaces
T2 –, 9TH INTERNATIONAL CONF ON THE ELECTRONIC PROPERTIES OF TWO-DIMENSIONAL, SYSTEMS ( EP2DS-9 ) / 5TH INTERNATIONAL CONF ON MODULATED SEMICONDUCTOR, STRUCTURES ( MSS-5 ), JUL 263, 518 (1992). http://doi.org/10.1016/0039-6028(92)90400-Z
Abstract: A far-infrared absorption study of electrons in lightly-doped GaAs/Al0.3Ga0.7As superlattices is presented. Both weakly and strongly coupled superlattices are investigated, and the difference between intersubband transitions and transitions between extended minibands is demonstrated. At low temperatures, the absorption spectra are dominated by donor transitions. The 1s-2p(z) transition, which is intimately related to the intersubband transition, is observed. All experimental data are compared to an envelope function calculation for the miniband structure and a variational calculation for the donor energies. Excellent agreement between experiment and theory is achieved.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 1.925
Times cited: 5
DOI: 10.1016/0039-6028(92)90400-Z
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“Long period surface ordering of iodine ions in mixed tabular AgBr-AgBrI microcrystals”. Goessens C, Schryvers D, van Landuyt J, Amelinckx S, de Keyzer R, Surface science : a journal devoted to the physics and chemistry of interfaces 337, 153 (1995). http://doi.org/10.1016/0039-6028(95)00000-3
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.925
Times cited: 10
DOI: 10.1016/0039-6028(95)00000-3
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“Magneto-oscillations of the gate current in a laterally modulated two-dimensional electron gas”. Blom FAP, Peeters FM, van de Zanden K, van Hove M, Surface science : a journal devoted to the physics and chemistry of interfaces 361/362, 851 (1996). http://doi.org/10.1016/0039-6028(96)00549-3
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 1.925
Times cited: 1
DOI: 10.1016/0039-6028(96)00549-3
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“Resonant bound bipolarons in a superlattice in a high magnetic field”. Shi JM, Peeters FM, Devreese JT, Surface science : a journal devoted to the physics and chemistry of interfaces 361/362, 397 (1996). http://doi.org/10.1016/0039-6028(96)00430-X
Keywords: A1 Journal article; Condensed Matter Theory (CMT); Theory of quantum systems and complex systems
Impact Factor: 1.925
DOI: 10.1016/0039-6028(96)00430-X
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“Resonant magnetopolaron coupling to both polar and neutral optical phonons in the layer compound InSe”. Peeters FM, Wu XG, Devreese JT, Watts M, Nicholas RJ, Howell DF, van Bockstal L, Herlach F, Langerak CJGM, Singleton J, Chevy A, Surface science 263, 654 (1992). http://doi.org/10.1016/0039-6028(92)90429-A
Keywords: A1 Journal article; Condensed Matter Theory (CMT); Theory of quantum systems and complex systems
Impact Factor: 1.925
Times cited: 4
DOI: 10.1016/0039-6028(92)90429-A
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