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Author Brosens, F.; Magnus, W. doi  openurl
  Title Carrier transport in nanodevices: revisiting the Boltzmann and Wigner distribution functions Type A1 Journal article
  Year 2009 Publication Physica status solidi: B: basic research Abbreviated Journal Phys Status Solidi B  
  Volume 246 Issue 7 Pages 1656-1661  
  Keywords A1 Journal article; Condensed Matter Theory (CMT); Theory of quantum systems and complex systems  
  Abstract In principle, transport of charged carriers in nanometer sized solid-state devices can be fully characterized once the non-equilibrium distribution function describing the carrier ensemble is known. In this light, we have revisited the Boltzmann and the Wigner distribution functions and the framework in which they emerge from the classical respectively quantum mechanical Liouville equation. We have assessed the method of the characteristic curves as a potential workhorse to solve the time dependent Boltzmann equation for carriers propagating through spatially non-uniform systems, such as nanodevices. In order to validate the proposed solution strategy, we numerically solve the Boltzmann equation for a one-dimensional conductor mimicking the basic features of a biased low-dimensional transistor operating in the on-state. Finally, we propose a computational scheme capable of extending the benefits of the above mentioned solution strategy when it comes to solve the Wigner-Liouville equation.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Berlin Editor  
  Language Wos 000268659100033 Publication Date 2009-04-22  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0370-1972;1521-3951; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor (up) 1.674 Times cited 8 Open Access  
  Notes Approved Most recent IF: 1.674; 2009 IF: 1.150  
  Call Number UA @ lucian @ c:irua:77953 Serial 284  
Permanent link to this record
 

 
Author Bogaerts, A.; Grozeva, M. doi  openurl
  Title Axial non-uniformity of longitudinal hollow cathode discharges for laser applications: numerical modeling and comparison with experiments Type A1 Journal article
  Year 2002 Publication Applied physics: B: photo-physics and laser chemistry Abbreviated Journal Appl Phys B-Lasers O  
  Volume 75 Issue Pages 731-738  
  Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Berlin Editor  
  Language Wos 000180587100019 Publication Date 2004-03-19  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0946-2171;1432-0649; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor (up) 1.696 Times cited 8 Open Access  
  Notes Approved Most recent IF: 1.696; 2002 IF: 2.080  
  Call Number UA @ lucian @ c:irua:44007 Serial 211  
Permanent link to this record
 

 
Author Neyts, E.C. pdf  doi
openurl 
  Title The role of ions in plasma catalytic carbon nanotube growth : a review Type A1 Journal article
  Year 2015 Publication Frontiers of Chemical Science and Engineering Abbreviated Journal Front Chem Sci Eng  
  Volume 9 Issue 9 Pages 154-162  
  Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract While it is well-known that the plasma-enhanced catalytic chemical vapor deposition (PECVD) of carbon nanotubes (CNTs) offers a number of advantages over thermal CVD, the influence of the various individual contributing factors is not well understood. Especially the role of ions is unclear, since ions in plasmas are generally associated with sputtering rather than with growing a material. Even so, various studies have demonstrated the beneficial effects of ion bombardment during the growth of CNTs. This review looks at the role of the ions in plasma-enhanced CNT growth as deduced from both experimental and simulation studies. Specific attention is paid to the beneficial effects of ion bombardment. Based on the available literature, it can be concluded that ions can be either beneficial or detrimental for carbon nanotube growth, depending on the exact conditions and the control over the growth process.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos 000360319600003 Publication Date 2015-06-11  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 2095-0179 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor (up) 1.712 Times cited 8 Open Access  
  Notes Approved Most recent IF: 1.712; 2015 IF: NA  
  Call Number UA @ lucian @ c:irua:127815 Serial 4239  
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Author van Renterghem, W.; Goessens, C.; Schryvers, D.; van Landuyt, J.; Verrept, P.; Bollen, D.; van Roost, C.; de Keyzer, R. doi  openurl
  Title Defects and growth mechanisms of AgCl(100) tabular crystals Type A1 Journal article
  Year 1998 Publication Journal of crystal growth Abbreviated Journal J Cryst Growth  
  Volume 187 Issue Pages 410-420  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Amsterdam Editor  
  Language Wos 000073710800014 Publication Date 2002-07-25  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0022-0248; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor (up) 1.751 Times cited 8 Open Access  
  Notes Approved Most recent IF: 1.751; 1998 IF: 1.307  
  Call Number UA @ lucian @ c:irua:29675 Serial 625  
Permanent link to this record
 

 
Author Pardo, J.A.; Santiso, J.; Solis, C.; Garcia, G.; Figueras, A.; Rossell, M.D.; Van Tendeloo, G. pdf  doi
openurl 
  Title Epitaxial Sr4Fe6O13\pm\delta films obtained by pulsed laser deposition Type A1 Journal article
  Year 2004 Publication Journal of crystal growth Abbreviated Journal J Cryst Growth  
  Volume 262 Issue Pages 334-340  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Amsterdam Editor  
  Language Wos 000189098700052 Publication Date 2003-11-15  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0022-0248; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor (up) 1.751 Times cited 8 Open Access  
  Notes Iap V-1 Approved Most recent IF: 1.751; 2004 IF: 1.707  
  Call Number UA @ lucian @ c:irua:54786 Serial 1074  
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Author Vansweevelt, R.; Mortet, V.; D' Haen, J.; Ruttens, bart; van Haesendonck, C.; Partoens, B.; Peeters, F.M.; Wagner, P. doi  openurl
  Title Study on the giant positive magnetoresistance and Hall effect in ultrathin graphite flakes Type A1 Journal article
  Year 2011 Publication Physica status solidi : A : applications and materials science Abbreviated Journal Phys Status Solidi A  
  Volume 208 Issue 6 Pages 1252-1258  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract In this paper, we report on the electronic transport properties of mesoscopic, ultrathin graphite flakes with a thickness corresponding to a stack of 150 graphene layers. The graphite flakes show an unexpectedly strong positive magnetoresistance (PMR) already at room temperature, which scales in good approximation with the square of the magnetic field. Furthermore, we show that the resistivity is unaffected by magnetic fields oriented in plane with the graphene layers. Hall effect measurements indicate that the charge carriers are p-type and their concentration increases with increasing temperature while the mobility is decreasing. The Hall voltage is non-linear in higher magnetic fields. Possible origins of the observed effects are discussed. Ball and stick model of the two topmost carbon layers of the hexagonal graphite structure.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos 000292945800008 Publication Date 2011-02-24  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1862-6300; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor (up) 1.775 Times cited 8 Open Access  
  Notes ; The authors gratefully acknowledge the support by FWO – Research Foundation Flanders (project G.0159.07 “Structural and electronic properties of biologically modified, graphene-based layers”), by the Federal Belgian Interuniversity Attraction Poles Programme BELSPO (project TAP VI P6/42 “Quantum effects in clusters and nanowires”) and by the Methusalem network “NANO – Antwerp-Hasselt,” funded by the Flemish Community. Technical assistance by Stoffel D. Janssens (magnet calibration and software development), Dr. Hong Yin (AFM-based thickness studies), Dr. Ronald Thoelen (data analysis), and Prof. Hans-Gerd Boyen (XPS spectroscopy) is greatly appreciated. ; Approved Most recent IF: 1.775; 2011 IF: 1.463  
  Call Number UA @ lucian @ c:irua:91941 Serial 3343  
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Author Ekimov, E.A.; Kudryavtsev, O.S.; Turner, S.; Korneychuk, S.; Sirotinkin, V.P.; Dolenko, T.A.; Vervald, A.M.; Vlasov, I.I. pdf  doi
openurl 
  Title The effect of molecular structure of organic compound on the direct high-pressure synthesis of boron-doped nanodiamond: Effect of organic compound on synthesis of boron-doped nanodiamond Type A1 Journal article
  Year 2016 Publication Physica status solidi : A : applications and materials science Abbreviated Journal Phys Status Solidi A  
  Volume 213 Issue 213 Pages 2582-2589  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract Evolution of crystalline phases with temperature has been studied in materials produced by high-pressure high-temperature treatment of 9-borabicyclo[3.3.1]nonane dimer (9BBN), triphenylborane and trimesitylborane. The boron-doped diamond nanoparticles with a size below 10 nm were obtained at 8–9 GPa and temperatures 970–1250 °C from 9BBN only. Bridged structure and the presence of boron atom in the carbon cycle of 9BBN were revealed to be a key point for the direct synthesis of doped diamond nanocrystals. The diffusional transformation of the disordered carbon phase is suggested to be the main mechanism of the nanodiamond formation from 9BBN in the temperature range of 970–1400 °C. Aqueous suspensions of primary boron-doped diamond nanocrystals were prepared upon removal of non-diamond phases that opens wide opportunities for application of this new nanomaterial in electronics and biotechnologies.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos 000388321500006 Publication Date 2016-07-04  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1862-6300 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor (up) 1.775 Times cited 8 Open Access  
  Notes Approved Most recent IF: 1.775  
  Call Number EMAT @ emat @ c:irua:135175 Serial 4120  
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Author de de Meux, A.J.; Bhoolokam, A.; Pourtois, G.; Genoe, J.; Heremans, P. pdf  doi
openurl 
  Title Oxygen vacancies effects in a-IGZO : formation mechanisms, hysteresis, and negative bias stress effects Type A1 Journal article
  Year 2017 Publication Physica status solidi : A : applications and materials science Abbreviated Journal Phys Status Solidi A  
  Volume 214 Issue 6 Pages 1600889  
  Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract The amorphous oxide semiconductor Indium-Gallium-Zinc-Oxide (a-IGZO) has gained a large technological relevance as a semiconductor for thin-film transistors in active-matrix displays. Yet, major questions remain unanswered regarding the atomic origin of threshold voltage control, doping level, hysteresis, negative bias stress (NBS), and negative bias illumination stress (NBIS). We undertake a systematic study of the effects of oxygen vacancies on the properties of a-IGZO by relating experimental observations to microscopic insights gained from first-principle simulations. It is found that the amorphous nature of the semiconductor allows unusually large atomic relaxations. In some cases, oxygen vacancies are found to behave as perfect shallow donors without the formation of structural defects. Once structural defects are formed, their transition states can vary upon charge and discharge cycles. We associate this phenomenon to a possible presence of hysteresis in the transfer curve of the devices. Under NBS, the creation of oxygen vacancies becomes energetically very stable, hence thermodynamically very likely. This generation process is correlated with the occurrence of the negative bias stress instabilities observed in a-IGZO transistors. While oxygen vacancies can therefore be related to NBS and hysteresis, it appears unlikely from our results that they are direct causes of NBIS, contrary to common belief.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos 000403339900012 Publication Date 2017-03-02  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1862-6300 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor (up) 1.775 Times cited 8 Open Access Not_Open_Access  
  Notes Approved Most recent IF: 1.775  
  Call Number UA @ lucian @ c:irua:144219 Serial 4678  
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Author Garud, S.; Gampa, N.; Allen, T.G.; Kotipalli, R.; Flandre, D.; Batuk, M.; Hadermann, J.; Meuris, M.; Poortmans, J.; Smets, A.; Vermang, B. doi  openurl
  Title Surface passivation of CIGS solar cells using gallium oxide Type A1 Journal article
  Year 2018 Publication Physica status solidi : A : applications and materials science Abbreviated Journal Phys Status Solidi A  
  Volume 215 Issue 7 Pages 1700826  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract This work proposes gallium oxide grown by plasma-enhanced atomic layer deposition, as a surface passivation material at the CdS buffer interface of Cu(In,Ga)Se-2 (CIGS) solar cells. In preliminary experiments, a metal-insulator-semiconductor (MIS) structure is used to compare aluminium oxide, gallium oxide, and hafnium oxide as passivation layers at the CIGS-CdS interface. The findings suggest that gallium oxide on CIGS may show a density of positive charges and qualitatively, the least interface trap density. Subsequent solar cell results with an estimated 0.5nm passivation layer show an substantial absolute improvement of 56mV in open-circuit voltage (V-OC), 1mAcm(-2) in short-circuit current density (J(SC)), and 2.6% in overall efficiency as compared to a reference (with the reference showing 8.5% under AM 1.5G).  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos 000430128500015 Publication Date 2018-02-27  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1862-6300 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor (up) 1.775 Times cited 8 Open Access Not_Open_Access  
  Notes ; The work published in this paper was supported by the European Research Council (ERC) under the Union's Horizon 2020 research and innovation programme (grant agreement No 715027). The authors would also like to thank Dr. Marcel Simor (Solliance) for the CIGS layer fabrication and Prof. Johan Lauwaert (Universtiy of Ghent) for his guidance on DLTS measurements. ; Approved Most recent IF: 1.775  
  Call Number UA @ lucian @ c:irua:150761 Serial 4981  
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Author Abakumov, A.M.; Mironov, A.V.; Govorov, V.A.; Lobanov, M.V.; Rozova, M.G.; Antipov, E.V.; Lebedev, O.I.; Van Tendeloo, G. doi  openurl
  Title Synthesis and structural investigations on the new Sr1.32Mn0.83Cu0.17O3 compound Type A1 Journal article
  Year 2003 Publication Solid state sciences Abbreviated Journal Solid State Sci  
  Volume 5 Issue 8 Pages 1117-1125  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Amsterdam Editor  
  Language Wos 000185204900005 Publication Date 2003-06-30  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1293-2558; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor (up) 1.811 Times cited 8 Open Access  
  Notes Approved Most recent IF: 1.811; 2003 IF: 1.327  
  Call Number UA @ lucian @ c:irua:54696 Serial 3436  
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Author Shanenko, A.A.; Orlova, N.V.; Vagov, A.; Milošević, M.V.; Axt, V.M.; Peeters, F.M. pdf  doi
openurl 
  Title Nanofilms as quantum-engineered multiband superconductors : the Ginzburg-Landau theory Type A1 Journal article
  Year 2013 Publication Europhysics letters Abbreviated Journal Epl-Europhys Lett  
  Volume 102 Issue 2 Pages 27003-27006  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract Recently fabricated single-crystalline atomically flat metallic nanofilms are in fact quantum-engineered multiband superconductors. Here the multiband structure is dictated by the nanofilm thickness through the size quantization of the electron motion perpendicular to the nanofilm. This opens the unique possibility to explore superconductivity in well-controlled multi-band systems. However, a serious obstacle is the absence of a convenient and manageable theoretical tool to access new physical phenomena in such quasi-two-dimensional systems, including interplay of quantum confinement and fluctuations. Here we cover this gap and construct the appropriate multiband Ginzburg-Landau functional for nano-thin superconductors. Copyright (C) EPLA, 2013  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Paris Editor  
  Language Wos 000319617700019 Publication Date 2013-05-03  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0295-5075;1286-4854; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor (up) 1.957 Times cited 8 Open Access  
  Notes ; This work was supported by the “Odysseus” Program of the Flemish Government and the Flemish Science Foundation (FWO-Vl). ; Approved Most recent IF: 1.957; 2013 IF: 2.269  
  Call Number UA @ lucian @ c:irua:109859 Serial 2257  
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Author Doria, M.M.; de Romaguera, A.R.C.; Peeters, F.M. doi  openurl
  Title The ground states of the two-component order parameter superconductor Type A1 Journal article
  Year 2010 Publication Europhysics letters Abbreviated Journal Epl-Europhys Lett  
  Volume 92 Issue 1 Pages 17004  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract We show that in presence of an applied external field the two-component order parameter superconductor falls in two categories of ground states, namely, in the traditional Abrikosov ground state or in a new ground state fitted to describe a superconducting layer with texture, that is, patched regions separated by a phase difference of pi. The existence of these two kinds of ground states follows from the sole assumption that the total supercurrent is the sum of the two individual supercurrents and is independent of any consideration about the free energy expansion. Uniquely defined relations between the current density and the superfluid density hold for these two ground states, which also determine the magnetization in terms of average values of the order parameters. Because these ground-state conditions are also Bogomolny equations we construct the free energy for the two-component superconductor which admits the Bogomolny solution at a special coupling value. Copyright (C) EPLA, 2010  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Paris Editor  
  Language Wos 000284469900027 Publication Date 2010-10-30  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0295-5075;1286-4854; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor (up) 1.957 Times cited 8 Open Access  
  Notes ; ; Approved Most recent IF: 1.957; 2010 IF: 2.753  
  Call Number UA @ lucian @ c:irua:95558 Serial 3584  
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Author Altantzis, T.; Zanaga, D.; Bals, S. pdf  url
doi  openurl
  Title Advanced electron tomography of nanoparticle assemblies Type A1 Journal article
  Year 2017 Publication Europhysics letters Abbreviated Journal Epl-Europhys Lett  
  Volume 119 Issue 119 Pages 38001  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract Nanoparticle assemblies have attracted enormous scientific interest during the last

years, due to their unique properties compared to those of their building blocks. To understand

the origin of these properties and to establish the connection with their structure, a detailed and

quantitative structural characterization is essential. Transmission electron microscopy has been

widely used to investigate nano-assemblies. However, TEM images only correspond to a twodimensional

projection of a three-dimensional object. Therefore, in order to obtain the necessary

3D structural information electron tomography has to be applied. By means of advanced electron

tomography, both qualitative and quantitative information can be obtained, which can be used

for detailed theoretical studies.
 
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos 000415019400023 Publication Date 2017-10-12  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0295-5075 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor (up) 1.957 Times cited 8 Open Access OpenAccess  
  Notes We would like to thank the colleagues who have contributed to this work over the years, including L. M. Liz- Marzan, M. Grzelczak, A. Sanchez-Iglesias, D. Vanmaekelbergh, M. P. Boneschanscher, W. H. Evers, J. J. Geuchies, B. Goris, A. de Backer, S. van Aert, M.-P. Pileni, Z. Yang, K. J. Batenburg, J. Sijbers, F. Bleichrodt, W. J. Palenstijn, A. van Blaaderen, M. A. van Huis, F. M. Peeters, N. Winckelmans and D. Wang. The authors gratefully acknowledge funding from the Research Foundation Flanders (G.0381.16N, G.036915 G.0374.13 and funding of a postdoctoral grant to TA). SB and DZ acknowledge funding from the European Research Council, ERC grant No. 335078 – Colouratom. (ROMEO:green; preprint:; postprint:can ; pdfversion:cannot); saraecas; ECAS_Sara; Approved Most recent IF: 1.957  
  Call Number EMAT @ emat @c:irua:146096UA @ admin @ c:irua:146096 Serial 4733  
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Author Oleshko, V.P.; Gijbels, R.H.; Jacob, W.A. doi  openurl
  Title Analytical electron microscopy of silver halide photographic systems Type A1 Journal article
  Year 2000 Publication Micron Abbreviated Journal Micron  
  Volume 31 Issue Pages 55-95  
  Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos 000083352100007 Publication Date 2002-07-25  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0968-4328; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor (up) 1.98 Times cited 8 Open Access  
  Notes Approved Most recent IF: 1.98; 2000 IF: 1.324  
  Call Number UA @ lucian @ c:irua:34068 Serial 108  
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Author Bussmann-Holder, A.; Dalal, N.; Michel, K.H. pdf  doi
openurl 
  Title Polarizability induced cooperative proton ordering, coexistence of order/disorder and displacive dynamics and isotope effects in hydrogen-bonded systems Type A1 Journal article
  Year 2000 Publication The journal of physics and chemistry of solids T2 – Williamsburg Workshop on Ferroelectrics 99, JAN 31-FEB 03, 1999, WILLIAMSBURG, VIRGINIA Abbreviated Journal J Phys Chem Solids  
  Volume 61 Issue 2 Pages 271-274  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract Despite the general belief that hydrogen-bonded ferro- and antiferroelectrics undergo a pure order/disorder transition at the structural instability, new NMR data and a new theoretical concept yield convincing evidence that a pronounced displacive component is present in these systems, which modifies substantially the temperature dependencies of the tunnel and lattice mode frequencies. The experiments and their interpretation are presented. (C) 1999 Elsevier Science Ltd. All rights reserved.  
  Address  
  Corporate Author Thesis  
  Publisher Pergamon-elsevier science ltd Place of Publication Oxford Editor  
  Language Wos 000084147000020 Publication Date 2002-07-25  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0022-3697; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor (up) 2.059 Times cited 8 Open Access  
  Notes Approved Most recent IF: 2.059; 2000 IF: 1.003  
  Call Number UA @ lucian @ c:irua:103469 Serial 2660  
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Author Wen, D.-Q.; Zhang, Q.-Z.; Jiang, W.; Song, U.-H.; Bogaerts, A.; Wang, Y.-N. pdf  doi
openurl 
  Title Phase modulation in pulsed dual-frequency capacitively coupled plasmas Type A1 Journal article
  Year 2014 Publication Journal of applied physics Abbreviated Journal J Appl Phys  
  Volume 115 Issue 23 Pages 233303  
  Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract Particle-in-cell/Monte Carlo collision simulations, coupled with an external circuit, are used to investigate the behavior of pulsed dual-frequency (DF) capacitively coupled plasmas (CCPs). It is found that the phase shift θ between the high (or low) frequency source and the pulse modulation has a great influence on the ion density and the ionization rate. By pulsing the high frequency source, the time-averaged ion density shows a maximum when θ = 90∘. The time-averaged ion energy distribution functions (IEDFs) at the driven electrode, however, keep almost unchanged, illustrating the potential of pulsed DF-CCP for independent control of ion density (and flux) and ion energy. A detailed investigation of the temporal evolution of the plasma characteristics indicates that several high frequency harmonics can be excited at the initial stage of a pulse period by tuning the phase shift θ, and this gives rise to strong sheath oscillations, and therefore high ionization rates. For comparison, the pulsing of the low frequency source is also studied. In this case, the ion density changes slightly as a function of time, and the time-averaged ion density shows the same trend as in the HF modulation for different phase shifts θ. Moreover, the time-averaged IEDFs at the driven electrode can be modulated, showing the potential to reduce the maximum ion bombardment energy.  
  Address  
  Corporate Author Thesis  
  Publisher American Institute of Physics Place of Publication New York, N.Y. Editor  
  Language Wos 000338106000008 Publication Date 2014-06-23  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0021-8979;1089-7550; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor (up) 2.068 Times cited 8 Open Access  
  Notes Approved Most recent IF: 2.068; 2014 IF: 2.183  
  Call Number UA @ lucian @ c:irua:117415 Serial 2585  
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Author Milants, K.; Verheyden, J.; Barancira, T.; Deweerd, W.; Pattyn, H.; Bukshpan, S.; Williamson, D.L.; Vermeiren, F.; Van Tendeloo, G.; Vlekken, C.; Libbrecht, S.; van Haesendonck, C. openurl 
  Title Size distribution and magnetic behavior of lead inclusions in silicon single crystals Type A1 Journal article
  Year 1997 Publication Journal of applied physics Abbreviated Journal J Appl Phys  
  Volume 81 Issue 5 Pages 2148-2152  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher American Institute of Physics Place of Publication New York, N.Y. Editor  
  Language Wos A1997WK08800017 Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0021-8979; 1089-7550 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor (up) 2.068 Times cited 8 Open Access  
  Notes Approved Most recent IF: 2.068; 1997 IF: 1.630  
  Call Number UA @ lucian @ c:irua:21433 Serial 3035  
Permanent link to this record
 

 
Author Andrikopoulos, D.; Sorée, B.; De Boeck, J. url  doi
openurl 
  Title Skyrmion-induced bound states on the surface of three-dimensional topological insulators Type A1 Journal article
  Year 2016 Publication Journal of applied physics Abbreviated Journal J Appl Phys  
  Volume 119 Issue 119 Pages 193903  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract The interaction between the surface of a 3D topological insulator and a skyrmion/anti-skyrmion structure is studied in order to investigate the possibility of electron confinement due to the skyrmion presence. Both hedgehog (Neel) and vortex (Bloch) skyrmions are considered. For the hedgehog skyrmion, the in-plane components cannot be disregarded and their interaction with the surface state of the topological insulator (TI) has to be taken into account. A semi-classical description of the skyrmion chiral angle is obtained using the variational principle. It is shown that both the hedgehog and the vortex skyrmion can induce bound states on the surface of the TI. However, the number and the properties of these states depend strongly on the skyrmion type and the skyrmion topological number N-Sk. The probability densities of the bound electrons are also derived where it is shown that they are localized within the skyrmion region. Published by AIP Publishing.  
  Address  
  Corporate Author Thesis  
  Publisher American Institute of Physics Place of Publication New York, N.Y. Editor  
  Language Wos 000377718100013 Publication Date 2016-05-18  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0021-8979; 1089-7550 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor (up) 2.068 Times cited 8 Open Access  
  Notes ; ; Approved Most recent IF: 2.068  
  Call Number UA @ lucian @ c:irua:134607 Serial 4244  
Permanent link to this record
 

 
Author Leao, S.A.; Hipolito, O.; Peeters, F.M. doi  openurl
  Title Inter and intrasubband transitions via lo phonons in quantum wires Type A1 Journal article
  Year 1993 Publication Superlattices and microstructures Abbreviated Journal Superlattice Microst  
  Volume 13 Issue 1 Pages 37-40  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract We investigate the effects of the finite confining potential V0 on the absorption and emission scattering rates of electrons interacting with LO phonons for a cylindrical GaAs quantum wire. The emission rates are qualitatively similar to those of the 2D case. The absorption rates on the other hand exhibit two different regimes: 1) for a wire radius smaller than a certain value (80 Å in the case where V0 = 190 meV) the behavior is similar to the 2D and 3D analogues, but 2) for larger radius the absorption rates initially increase with increasing energy, reach a maximum value and then decrease monotonicaly. A complete study is made as a function of wire radius, and electron energy.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication London Editor  
  Language Wos A1993KK13700007 Publication Date 2002-10-07  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0749-6036; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor (up) 2.097 Times cited 8 Open Access  
  Notes Approved no  
  Call Number UA @ lucian @ c:irua:103011 Serial 1680  
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Author Zhang, X.F.; Van Tendeloo, G.; Amelinckx, S.; Pelloquin, D.; Michel, C.; Hervieu, M.; Raveau, B. pdf  doi
openurl 
  Title Structural aspects of Bi2-xPbxSr3.5Cu2(CO3)O8-\delta for 0\leq x\leq0.75 : an electron-microscopy study Type A1 Journal article
  Year 1994 Publication Journal of solid state chemistry Abbreviated Journal J Solid State Chem  
  Volume 113 Issue 2 Pages 327-344  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract The structure and defect structure of Bi2-xPbxSr3.5Cu2 (CO3)O8-delta compounds with 0 less-than-or-equal-to x less-than-or-equal-to 0.75 are carefully investigated by electron diffraction and high-resolution electron microscopy. All compounds have an orthorhombic structure with a almost-equal-to b almost-equal-to 5.4 angstrom and c almost-equal-to 39.5 angstrom. The length of the b-axis decreases monotonically with increasing x. The space group for the basic structure is Abm2. The structure can be considered as an intergrowth of Bi2Sr2CuO6 lamellae with Sr2CuO2 (CO3) lamellae along the c-axis. CO3 groups behave as bridges connecting the CuO6 octahedra. In the x = 0 compound the carbon atoms are shifted away from their symmetry positions; the orientational ordering of the CO3 groups (or the carbon shift) in successive CO planes alternates along +b and -b. Typical Bi-type and Pb-type modulations are found along the b-axis up to a Pb content x = 0.5. Electron beam irradiation destroys the ordering of the CO3 groups and alters the modulated structure. (C) 1994 Academic press, inc.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication London Editor  
  Language Wos A1994PX18600016 Publication Date 2002-10-07  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0022-4596; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor (up) 2.133 Times cited 8 Open Access  
  Notes Approved  
  Call Number UA @ lucian @ c:irua:99810 Serial 3210  
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Author Shpanchenko, R.V.; Abakumov, A.M.; Antipov, E.V.; Nistor, L.; Van Tendeloo, G.; Amelinckx, S. pdf  doi
openurl 
  Title Structural study of the new complex oxides Ba5-ySryR2-xAl2Zr1+xO13+x/2 (R=Gd-Lu, Y, Sc) Type A1 Journal article
  Year 1995 Publication Journal of solid state chemistry Abbreviated Journal J Solid State Chem  
  Volume 118 Issue Pages 180-192  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication London Editor  
  Language Wos A1995RN49200028 Publication Date 2002-10-07  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0022-4596; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor (up) 2.133 Times cited 8 Open Access  
  Notes Approved  
  Call Number UA @ lucian @ c:irua:13315 Serial 3263  
Permanent link to this record
 

 
Author Payette, C.; Austing, D.G.; Yu, G.; Gupta, J.A.; Nair, S.V.; Partoens, B.; Amaha, S.; Tarucha, S. doi  openurl
  Title Two-level anti-crossings high up in the single-particle energy spectrum of a quantum dot Type A1 Journal article
  Year 2008 Publication Physica. E: Low-dimensional systems and nanostructures Abbreviated Journal Physica E  
  Volume 40 Issue 6 Pages 1807-1810  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos 000255717400010 Publication Date 2007-09-22  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1386-9477; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor (up) 2.221 Times cited 8 Open Access  
  Notes Approved Most recent IF: 2.221; 2008 IF: 1.230  
  Call Number UA @ lucian @ c:irua:69132 Serial 3783  
Permanent link to this record
 

 
Author Abakumov, A.M.; d' Hondt, H.; Rossell, M.D.; Tsirlin, A.A.; Gutnikova, O.; Filimonov, D.S.; Schnelle, W.; Rosner, H.; Hadermann, J.; Van Tendeloo, G.; Antipov, E.V. doi  openurl
  Title Coupled anion and cation ordering in Sr3RFe4O10.5 (R=Y, Ho, Dy) anion-deficientperovskites Type A1 Journal article
  Year 2010 Publication Journal of solid state chemistry Abbreviated Journal J Solid State Chem  
  Volume 183 Issue 12 Pages 2845-2854  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract The Sr3RFe4O10.5 (R=Y, Ho, Dy) anion-deficient perovskites were prepared using a solid-state reaction in evacuated sealed silica tubes. Transmission electron microscopy and 57Fe Mössbauer spectroscopy evidenced a complete A-cations and oxygen vacancies ordering. The structure model was further refined by ab initio structure relaxation, based on density functional theory calculations. The compounds crystallize in a tetragonal a≈2√2ap≈11.3 Å, с≈4сp≈16 Å unit cell (ap: parameter of the perovskite subcell) with the P42/mnm space group. Oxygen vacancies reside in the (FeO5/4□3/4) layers, comprising corner-sharing FeO4 tetrahedra and FeO5 tetragonal pyramids, which are sandwiched between the layers of the FeO6 octahedra. Smaller R atoms occupy the 9-fold coordinated position, whereas the 10-fold coordinated positions are occupied by larger Sr atoms. The Fe sublattice is ordered aniferromagnetically up to at least 500 K, while the rare-earth sublattice remains disordered down to 2 K.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication London Editor  
  Language Wos 000285431100014 Publication Date 2010-10-02  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0022-4596; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor (up) 2.299 Times cited 8 Open Access  
  Notes Approved Most recent IF: 2.299; 2010 IF: 2.261  
  Call Number UA @ lucian @ c:irua:88071 Serial 533  
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Author Hadermann, J.; Abakumov, A.M.; Perkisas, T.; d' Hondt, H.; Tan, H.; Verbeeck, J.; Filonenko, V.P.; Antipov, E.V.; Van Tendeloo, G. pdf  doi
openurl 
  Title New perovskite-based manganite Pb2Mn2O5 Type A1 Journal article
  Year 2010 Publication Journal of solid state chemistry Abbreviated Journal J Solid State Chem  
  Volume 183 Issue 183 Pages 2190-2195  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract A new perovskite based compound Pb2Mn2O5 has been synthesized using a high pressure high temperature technique. The structure model of Pb2Mn2O5 is proposed based on electron diffraction, high angle annular dark field scanning transmission electron microscopy and high resolution transmission electron microscopy. The compound crystallizes in an orthorhombic unit cell with parameters a=5.736(1)Å≈√2a p p p (a p the parameter of the perovskite subcell) and space group Pnma. The Pb2Mn2O5 structure consists of quasi two-dimensional perovskite blocks separated by 1/2[110] p (1̄01) p crystallographic shear planes. The blocks are connected to each other by chains of edge-sharing MnO5 distorted tetragonal pyramids. The chains of MnO5 pyramids and the MnO6 octahedra of the perovskite blocks delimit six-sided tunnels accommodating double chains of Pb atoms. The tunnels and pyramidal chains adopt two mirror-related configurations (left L and right R) and layers consisting of chains and tunnels of the same configuration alternate in the structure according to an -LRLR-sequence. The sequence is sometimes locally violated by the appearance of -LL- or -RR-fragments. A scheme is proposed with a JahnTeller distortion of the MnO6 octahedra with two long and two short bonds lying in the ac plane, along two perpendicular orientations within this plane, forming a d-type pattern.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication London Editor  
  Language Wos 000282139600041 Publication Date 2010-07-25  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0022-4596; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor (up) 2.299 Times cited 8 Open Access  
  Notes Fwo; Bof; Esteem 026019 Approved Most recent IF: 2.299; 2010 IF: 2.261  
  Call Number UA @ lucian @ c:irua:85472UA @ admin @ c:irua:85472 Serial 2332  
Permanent link to this record
 

 
Author Hadermann, J.; Abakumov, A.M.; Lebedev, O.I.; Van Tendeloo, G.; Rozova, M.G.; Shpanchenko, R.V.; Pavljuk, B.P.; Kopnin, E.M.; Antipov, E.V. pdf  doi
openurl 
  Title Structural transformations in the fluorinated T* phase Type A1 Journal article
  Year 1999 Publication Journal of solid state chemistry Abbreviated Journal J Solid State Chem  
  Volume 147 Issue Pages 647-656  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication London Editor  
  Language Wos 000083652600028 Publication Date 2002-10-07  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0022-4596; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor (up) 2.299 Times cited 8 Open Access  
  Notes Approved Most recent IF: 2.299; 1999 IF: 1.547  
  Call Number UA @ lucian @ c:irua:29279 Serial 3266  
Permanent link to this record
 

 
Author Morozov, V.A.; Lazoryak, B.I.; Lebedev, O.I.; Amelinckx, S.; Van Tendeloo, G. doi  openurl
  Title Structures of three polymorphs of the complex oxide K5Yb(MoO4)4 Type A1 Journal article
  Year 2003 Publication Journal of solid state chemistry Abbreviated Journal J Solid State Chem  
  Volume 176 Issue 1 Pages 76-87  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication London Editor  
  Language Wos 000186711300012 Publication Date 2003-10-09  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0022-4596; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor (up) 2.299 Times cited 8 Open Access  
  Notes Approved Most recent IF: 2.299; 2003 IF: 1.413  
  Call Number UA @ lucian @ c:irua:54716 Serial 3322  
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Author Hadermann, J.; Khasanova, N.R.; Van Tendeloo, G.; Abakumov, A.M.; Rozova, M.G.; Alekseeva, A.M.; Antipov, E.V. pdf  doi
openurl 
  Title Suppression of modulations in fluorinated Bi-2201 phases Type A1 Journal article
  Year 2001 Publication Journal of solid state chemistry Abbreviated Journal J Solid State Chem  
  Volume 156 Issue Pages 445-451  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication London Editor  
  Language Wos 000167252000027 Publication Date 2002-09-18  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0022-4596; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor (up) 2.299 Times cited 8 Open Access  
  Notes Approved Most recent IF: 2.299; 2001 IF: 1.614  
  Call Number UA @ lucian @ c:irua:36046 Serial 3386  
Permanent link to this record
 

 
Author Abakumov, A.M.; Hadermann, J.; Rozova, M.G.; Pavljuk, B.P.; Antipov, E.V.; Lebedev, O.I.; Van Tendeloo, G. pdf  doi
openurl 
  Title Synthesis and crystal structure of a new complex oxyfluoride La0.813Sr0.187Cu(o,F)3-\delta Type A1 Journal article
  Year 2000 Publication Journal of solid state cemistry Abbreviated Journal J Solid State Chem  
  Volume 149 Issue Pages 189-196  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos 000085229200027 Publication Date 2002-09-18  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0022-4596; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor (up) 2.299 Times cited 8 Open Access  
  Notes Approved Most recent IF: 2.299; 2000 IF: 1.527  
  Call Number UA @ lucian @ c:irua:29280 Serial 3422  
Permanent link to this record
 

 
Author Dixon, E.; Hadermann, J.; Hayward, M.A. doi  openurl
  Title The synthesis and complex anion-vacancy ordered structure of La0.33Sr0.67MnO2.42 Type A1 Journal article
  Year 2011 Publication Journal of solid state chemistry Abbreviated Journal J Solid State Chem  
  Volume 184 Issue 7 Pages 1791-1799  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract The low-temperature topotactic reduction of La0.33Sr0.67MnO3 with NaH results in the formation of La0.33Sr0.67MnO2.42. A combination of neutron powder and electron diffraction data show that La0.33Sr0.67MnO2.42 adopts a novel anion-vacancy ordered structure with a 6-layer OOTOOT' stacking sequence of the octahedral and tetrahedral layers (Pcmb, a=5.5804(1) Å, b=23.4104(7) Å, c=11.2441(3) Å). A significant concentration of anion vacancies at the anion site, which links neighbouring octahedral layers means that only 25% of the octahedral manganese coordination sites actually have 6-fold MnO6 coordination, the remainder being MnO5 square-based pyramidal sites. The chains of cooperatively twisted apex-linked MnO4 tetrahedra adopt an ordered -LRLR- arrangement within each tetrahedral layer. This is the first published example of a fully refined structure of this type which exhibits such intralayer ordering of the twisted tetrahedral chains. The rationale behind the contrasting structures of La0.33Sr0.67MnO2.42 and other previously reported reduced La1−xSrxMnO3−y phases is discussed.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication London Editor  
  Language Wos 000292718500032 Publication Date 2011-05-26  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0022-4596; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor (up) 2.299 Times cited 8 Open Access  
  Notes Approved Most recent IF: 2.299; 2011 IF: 2.159  
  Call Number UA @ lucian @ c:irua:90885 Serial 3600  
Permanent link to this record
 

 
Author Prabhakara, V.; Jannis, D.; Béché, A.; Bender, H.; Verbeeck, J. url  doi
openurl 
  Title Strain measurement in semiconductor FinFET devices using a novel moiré demodulation technique Type A1 Journal article
  Year 2019 Publication Semiconductor science and technology Abbreviated Journal Semicond Sci Tech  
  Volume Issue Pages  
  Keywords A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)  
  Abstract Moiré fringes are used throughout a wide variety of applications in physics and

engineering to bring out small variations in an underlying lattice by comparing with another reference lattice. This method was recently demonstrated in Scanning Transmission Electron Microscopy imaging to provide local strain measurement in crystals by comparing the crystal lattice with the scanning raster that then serves as the reference. The images obtained in this way contain a beating fringe pattern with a local period that represents the deviation of the lattice from the reference. In order to obtain the actual strain value, a region containing a full period of the fringe is required, which results in a compromise between strain sensitivity and spatial resolution. In this paper we propose an advanced setup making use of an optimised scanning pattern and a novel phase stepping demodulation scheme. We demonstrate the novel method on a series of 16 nm Si-Ge semiconductor FinFET devices in which strain plays a crucial role in modulating the charge carrier mobility. The obtained results are compared with both Nano-beam diffraction and the recently proposed Bessel beam diffraction technique. The setup provides a much improved spatial resolution over conventional moiré imaging in STEM while at the same time being fast and requiring no specialised diffraction camera as opposed to the diffraction techniques we compare to.
 
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos 000537721200002 Publication Date 2019-11-29  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0268-1242 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor (up) 2.305 Times cited 8 Open Access  
  Notes The Qu-Ant-EM microscope and the direct electron detector used in the diffraction experiments was partly funded by the Hercules fund from the Flemish Government. This project has received funding from the GOA project “Solarpaint” of the University of Antwerp. We would also like to thank Dr. Thomas Nuytten and Prof. Dr. Wilfried Vandervorst from IMEC, Leuven for their continuous support and collaboration with the project. Approved Most recent IF: 2.305  
  Call Number EMAT @ emat @c:irua:165794 Serial 5445  
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