| |
Records |
|
Author |
Fedina, L.; van Landuyt, J.; Vanhellemont, J.; Aseev, A. |
| |
Title |
Observation of vacancy clustering in Si crystals during in situ electron irradiation in a high voltage electron microscope |
Type |
P1 Proceeding |
| |
Year |
1996 |
Publication |
Materials Research Society symposium proceedings |
Abbreviated Journal |
|
| |
Volume |
404 |
Issue |
|
Pages |
189-194 |
| |
Keywords |
P1 Proceeding; Electron microscopy for materials research (EMAT) |
| |
Abstract |
|
| |
Address |
|
| |
Corporate Author |
|
Thesis |
|
| |
Publisher |
|
Place of Publication |
Wuhan |
Editor |
|
| |
Language |
|
Wos |
A1996BG19E00025 |
Publication Date |
0000-00-00 |
| |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
| |
Series Volume |
|
Series Issue |
|
Edition |
|
| |
ISSN |
0272-9172 |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
| |
Impact Factor  |
|
Times cited |
1 |
Open Access |
|
| |
Notes |
|
Approved |
no |
| |
Call Number |
UA @ lucian @ c:irua:15457 |
Serial |
2424 |
| Permanent link to this record |
| |
|
| |
|
Author |
Nistor, L.; Van Tendeloo, G.; Amelinckx, S.; Shpanchenko, R.V.; van Landuyt, J. |
| |
Title |
Ordering and defects in BanTaxTiyO3n ternary oxides |
Type |
P1 Proceeding |
| |
Year |
1994 |
Publication |
Electron Microscopy 1994, Vols 2a And 2b: Applications In Materials Sciences |
Abbreviated Journal |
|
| |
Volume |
|
Issue |
|
Pages |
869-870 |
| |
Keywords |
P1 Proceeding; Electron microscopy for materials research (EMAT) |
| |
Abstract |
|
| |
Address |
|
| |
Corporate Author |
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Thesis |
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| |
Publisher |
|
Place of Publication |
|
Editor |
|
| |
Language |
|
Wos |
A1994BE09Y00422 |
Publication Date |
0000-00-00 |
| |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
| |
Series Volume |
|
Series Issue |
|
Edition |
|
| |
ISSN |
2-86883-226-1 |
ISBN |
|
Additional Links |
UA library record; WoS full record; |
| |
Impact Factor |
|
Times cited |
|
Open Access |
|
| |
Notes |
|
Approved |
no |
| |
Call Number |
UA @ lucian @ c:irua:104477 |
Serial |
2504 |
| Permanent link to this record |
| |
|
| |
|
Author |
Van Tendeloo, G.; van Heurck, C.; van Landuyt, J.; Amelinckx, S.; Verheijen, M.A.; van Loosdrecht, P.H.M.; Meijer, G. |
| |
Title |
Phase transitions in C60 and the related microstructure: a study by electron diffraction and electron microscopy |
Type |
A1 Journal article |
| |
Year |
1992 |
Publication |
Journal of physical chemistry |
Abbreviated Journal |
|
| |
Volume |
96 |
Issue |
|
Pages |
7424-7430 |
| |
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
| |
Abstract |
|
| |
Address |
|
| |
Corporate Author |
|
Thesis |
|
| |
Publisher |
|
Place of Publication |
|
Editor |
|
| |
Language |
|
Wos |
A1992JM58600054 |
Publication Date |
2005-03-15 |
| |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
| |
Series Volume |
|
Series Issue |
|
Edition |
|
| |
ISSN |
0022-3654;1541-5740; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
| |
Impact Factor |
|
Times cited |
33 |
Open Access |
|
| |
Notes |
|
Approved |
no |
| |
Call Number |
UA @ lucian @ c:irua:4101 |
Serial |
2594 |
| Permanent link to this record |
| |
|
| |
|
Author |
Vanhellemont, J.; Romano-Rodriguez, A.; Fedina, L.; van Landuyt, J.; Aseev, A. |
| |
Title |
Point defect reactions in silicon studies in situ by high flux electron irradiation in high voltage transmission electron microscope |
Type |
A3 Journal article |
| |
Year |
1995 |
Publication |
Materials science and technology |
Abbreviated Journal |
|
| |
Volume |
11 |
Issue |
|
Pages |
1194-1204 |
| |
Keywords |
A3 Journal article; Electron microscopy for materials research (EMAT) |
| |
Abstract |
|
| |
Address |
|
| |
Corporate Author |
|
Thesis |
|
| |
Publisher |
|
Place of Publication |
|
Editor |
|
| |
Language |
|
Wos |
A1995TQ95100016 |
Publication Date |
0000-00-00 |
| |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
| |
Series Volume |
|
Series Issue |
|
Edition |
|
| |
ISSN |
|
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
| |
Impact Factor |
|
Times cited |
7 |
Open Access |
|
| |
Notes |
|
Approved |
no |
| |
Call Number |
UA @ lucian @ c:irua:13297 |
Serial |
2655 |
| Permanent link to this record |
| |
|
| |
|
Author |
De Meulenaere, P.; Van Tendeloo, G.; van Landuyt, J.; Mommaert, C.; Severne, G. |
| |
Title |
Radiation defects and ordered radiation patterns in Ni and Ni4Mo: a study by electron microscopy |
Type |
A1 Journal article |
| |
Year |
1993 |
Publication |
Philosophical magazine: A: physics of condensed matter: defects and mechanical properties |
Abbreviated Journal |
|
| |
Volume |
67 |
Issue |
3 |
Pages |
745-756 |
| |
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
| |
Abstract |
|
| |
Address |
|
| |
Corporate Author |
|
Thesis |
|
| |
Publisher |
|
Place of Publication |
London |
Editor |
|
| |
Language |
|
Wos |
A1993 |
Publication Date |
2007-07-08 |
| |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
| |
Series Volume |
|
Series Issue |
|
Edition |
|
| |
ISSN |
0141-8610;1460-6992; |
ISBN |
|
Additional Links |
UA library record; https://www.webofscience.com/api/gateway?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:A1993; WoS full record; WoS citing articles |
| |
Impact Factor |
|
Times cited |
1 |
Open Access |
|
| |
Notes |
|
Approved |
|
| |
Call Number |
UA @ lucian @ c:irua:6783 |
Serial |
2808 |
| Permanent link to this record |
| |
|
| |
|
Author |
Bernaerts, D.; Amelinckx, S.; Zhang, X.B.; Van Tendeloo, G.; van Landuyt, J. |
| |
Title |
Structural aspects of carbon nanotubes |
Type |
P3 Proceeding |
| |
Year |
1995 |
Publication |
|
Abbreviated Journal |
|
| |
Volume |
|
Issue |
|
Pages |
551-555 |
| |
Keywords |
P3 Proceeding; Electron microscopy for materials research (EMAT) |
| |
Abstract |
|
| |
Address |
|
| |
Corporate Author |
|
Thesis |
|
| |
Publisher |
World Scientific |
Place of Publication |
Singapore |
Editor |
|
| |
Language |
|
Wos |
|
Publication Date |
0000-00-00 |
| |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
| |
Series Volume |
|
Series Issue |
|
Edition |
|
| |
ISSN |
|
ISBN |
|
Additional Links |
UA library record |
| |
Impact Factor |
|
Times cited |
|
Open Access |
|
| |
Notes |
|
Approved |
|
| |
Call Number |
UA @ lucian @ c:irua:13295 |
Serial |
3206 |
| Permanent link to this record |
| |
|
| |
|
Author |
Goessens, C.; Schryvers, D.; van Landuyt, J.; Geuens, I.; Gijbels, R.; Jacob, W.; de Keyzer, R. |
| |
Title |
A temperature study of mixed AgBr-AgBrI tabular crystals |
Type |
H1 Book chapter |
| |
Year |
1995 |
Publication |
|
Abbreviated Journal |
|
| |
Volume |
|
Issue |
|
Pages |
70-76 |
| |
Keywords |
H1 Book chapter; Electron microscopy for materials research (EMAT); Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT) |
| |
Abstract |
|
| |
Address |
|
| |
Corporate Author |
|
Thesis |
|
| |
Publisher |
|
Place of Publication |
Hawaii |
Editor |
|
| |
Language |
|
Wos |
A1995RY19900011 |
Publication Date |
0000-00-00 |
| |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
| |
Series Volume |
39 |
Series Issue |
1 |
Edition |
|
| |
ISSN |
|
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
| |
Impact Factor |
|
Times cited |
3 |
Open Access |
|
| |
Notes |
|
Approved |
PHYSICS, APPLIED 47/145 Q2 # |
| |
Call Number |
UA @ lucian @ c:irua:8459 |
Serial |
3501 |
| Permanent link to this record |
| |
|
| |
|
Author |
Goessens, C.; Schryvers, D.; van Landuyt, J.; Geuens, I.; Gijbels, R.; Jacob, W.; de Keyzer, R. |
| |
Title |
A temperature study of mixed AgBr-AgBrI tabular crystals |
Type |
P3 Proceeding |
| |
Year |
1992 |
Publication |
|
Abbreviated Journal |
|
| |
Volume |
|
Issue |
|
Pages |
36-39 |
| |
Keywords |
P3 Proceeding; Electron microscopy for materials research (EMAT); Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT) |
| |
Abstract |
|
| |
Address |
|
| |
Corporate Author |
|
Thesis |
|
| |
Publisher |
|
Place of Publication |
Hawaii |
Editor |
|
| |
Language |
|
Wos |
|
Publication Date |
0000-00-00 |
| |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
| |
Series Volume |
|
Series Issue |
|
Edition |
|
| |
ISSN |
|
ISBN |
|
Additional Links |
UA library record |
| |
Impact Factor |
|
Times cited |
|
Open Access |
|
| |
Notes |
|
Approved |
PHYSICS, APPLIED 47/145 Q2 # |
| |
Call Number |
UA @ lucian @ c:irua:4201 |
Serial |
3502 |
| Permanent link to this record |
| |
|
| |
|
Author |
Zhang, Z.; Geng, W.; van Landuyt, J.; Van Tendeloo, G. |
| |
Title |
A transmission electron microscopy study of tweed-like structures in Al62Cu17.5CO17.5Si3 decagonal quasicrystals |
Type |
A1 Journal article |
| |
Year |
1995 |
Publication |
Philosophical magazine: A: physics of condensed matter: defects and mechanical properties |
Abbreviated Journal |
|
| |
Volume |
71 |
Issue |
5 |
Pages |
1177-1189 |
| |
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
| |
Abstract |
|
| |
Address |
|
| |
Corporate Author |
|
Thesis |
|
| |
Publisher |
|
Place of Publication |
London |
Editor |
|
| |
Language |
|
Wos |
A1995QW79500016 |
Publication Date |
0000-00-00 |
| |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
| |
Series Volume |
|
Series Issue |
|
Edition |
|
| |
ISSN |
0141-8610; 1364-2804 |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
| |
Impact Factor |
|
Times cited |
7 |
Open Access |
|
| |
Notes |
|
Approved |
no |
| |
Call Number |
UA @ lucian @ c:irua:13296 |
Serial |
3721 |
| Permanent link to this record |
| |
|
| |
|
Author |
Stuer, C.; Steegen, A.; van Landuyt, J.; Bender, H.; Maex, K. |
| |
Title |
Characterisation of the local stress induced by shallow trench isolation and CoSi2 silicidation |
Type |
A1 Journal article |
| |
Year |
2001 |
Publication |
Institute of physics conference series |
Abbreviated Journal |
|
| |
Volume |
|
Issue |
169 |
Pages |
481-484 |
| |
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
| |
Abstract |
With further down-scaling below 0.25mum technologies, CoSi2 is replacing TiSi2 because of its superior formation chemistry on narrow lines and favourable stress behaviour. Shallow trench isolation (STI) is used as the isolation technique in these technologies. In this study, convergent beam electron diffraction (CBED) measurements and finite element modelling (FEM) are performed to evaluate the local stress components in the silicon substrate, induced in STI structures with a 45 nm or a 85 nm CoSi2 silicidation. High compressive stresses in the active area and tensile stress around the trench corners are observed. |
| |
Address |
|
| |
Corporate Author |
|
Thesis |
|
| |
Publisher |
|
Place of Publication |
|
Editor |
|
| |
Language |
|
Wos |
|
Publication Date |
0000-00-00 |
| |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
| |
Series Volume |
|
Series Issue |
|
Edition |
|
| |
ISSN |
0-7503-0818-4 |
ISBN |
|
Additional Links |
UA library record; WoS full record; |
| |
Impact Factor |
|
Times cited |
|
Open Access |
|
| |
Notes |
|
Approved |
Most recent IF: NA |
| |
Call Number |
UA @ lucian @ c:irua:95163 |
Serial |
311 |
| Permanent link to this record |
| |
|
| |
|
Author |
van Landuyt, J.; Van Tendeloo, G. |
| |
Title |
Charcaterization by high-resolution transmission electron microscopy |
Type |
H3 Book chapter |
| |
Year |
1998 |
Publication |
|
Abbreviated Journal |
|
| |
Volume |
|
Issue |
|
Pages |
187-190 |
| |
Keywords |
H3 Book chapter; Electron microscopy for materials research (EMAT) |
| |
Abstract |
|
| |
Address |
|
| |
Corporate Author |
|
Thesis |
|
| |
Publisher |
Stt |
Place of Publication |
Den Haag |
Editor |
|
| |
Language |
|
Wos |
A1990DC39700012 |
Publication Date |
0000-00-00 |
| |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
| |
Series Volume |
|
Series Issue |
|
Edition |
|
| |
ISSN |
|
ISBN |
|
Additional Links |
UA library record; WoS full record; |
| |
Impact Factor |
|
Times cited |
|
Open Access |
|
| |
Notes |
|
Approved |
Most recent IF: NA |
| |
Call Number |
UA @ lucian @ c:irua:29685 |
Serial |
335 |
| Permanent link to this record |
| |
|
| |
|
Author |
De Gryse, O.; Clauws, P.; Vanhellemont, J.; Lebedev, O.; van Landuyt, J.; Simoen, E.; Claeys, C. |
| |
Title |
Chemical and structural characterization of oxide precipitates in heavily boron doped silicon by infrared spectroscopy and transmission electron microscopy |
Type |
P1 Proceeding |
| |
Year |
2002 |
Publication |
|
Abbreviated Journal |
|
| |
Volume |
|
Issue |
|
Pages |
183-194 |
| |
Keywords |
P1 Proceeding; Electron microscopy for materials research (EMAT) |
| |
Abstract |
Infrared absorption spectra of oxygen precipitates in boron doped silicon with a boron concentration between 10(17) and 10(19) cm(-3) are analyzed, applying the spectral function theory of the composite precipitates. The aspect ratio of the platelet precipitates has been determined by transmission electron microscopy measurements. Our analysis shows that in samples with moderate doping levels (<10(18) B cm(-3)) SiOgamma precipitates are formed with stoichiometry as in the lightly doped case. In the heavily (>10(18) cm(-3)) boron doped samples, however, the measured spectra of the precipitates are consistent with a mixture of SiO2 and B2O3. with a volume fraction of B2O3 as high as 0.41 in the most heavily doped case. |
| |
Address |
|
| |
Corporate Author |
|
Thesis |
|
| |
Publisher |
|
Place of Publication |
S.l. |
Editor |
|
| |
Language |
|
Wos |
|
Publication Date |
0000-00-00 |
| |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
| |
Series Volume |
|
Series Issue |
|
Edition |
|
| |
ISSN |
1-56677-344-X |
ISBN |
|
Additional Links |
UA library record; WoS full record; |
| |
Impact Factor |
|
Times cited |
|
Open Access |
|
| |
Notes |
|
Approved |
Most recent IF: NA |
| |
Call Number |
UA @ lucian @ c:irua:94950 |
Serial |
344 |
| Permanent link to this record |
| |
|
| |
|
Author |
Fedina, L.; Gutakovskii, A.; Aseev, A.; van Landuyt, J.; Vanhellemont, J. |
| |
Title |
Clustering of vacancies on {113} planes in Si layers close to Si-Si3N4 interfaces and further aggregation of self-interstitials inside vacancy clusters during electron irradiation |
Type |
A1 Journal article |
| |
Year |
1999 |
Publication |
Institute of physics conference series
T2 – Conference on Microscopy of Semiconducting Materials, MAR 22-25, 1999, UNIV OXFORD, OXFORD, ENGLAND |
Abbreviated Journal |
Inst Phys Conf Ser |
| |
Volume |
|
Issue |
164 |
Pages |
495-498 |
| |
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
| |
Abstract |
In situ HREM irradiation of (110) FZ-Si crystals covered with thin Si3N4 films was carried out in a JEOL-4000EX microscope, operated at 400 keV at room temperature. It is found that clustering of vacancies on (113) planes is realised in a Si layer close to the Si-Si3N4 interface at the initial stage of irradiation. Further aggregation of self-interstitials inside vacancy clusters is considered as an alternative way of point defect recombination in extended shape, to be accomplished with the formation of the extended defects of interstitial type upon interstitial supersaturation. |
| |
Address |
|
| |
Corporate Author |
|
Thesis |
|
| |
Publisher |
|
Place of Publication |
|
Editor |
|
| |
Language |
|
Wos |
000166835300106 |
Publication Date |
0000-00-00 |
| |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
| |
Series Volume |
|
Series Issue |
|
Edition |
|
| |
ISSN |
0-7503-0650-5; 0951-3248 |
ISBN |
|
Additional Links |
UA library record; WoS full record; |
| |
Impact Factor |
|
Times cited |
|
Open Access |
|
| |
Notes |
|
Approved |
Most recent IF: NA |
| |
Call Number |
UA @ lucian @ c:irua:102918 |
Serial |
376 |
| Permanent link to this record |
| |
|
| |
|
Author |
Vantomme, A.; Wu, M.F.; Hogg, S.; van Landuyt, J.; et al. |
| |
Title |
Comparative study of structural properties and photoluminescence in InGaN layers with a high In content |
Type |
A1 Journal article |
| |
Year |
2000 |
Publication |
Internet journal of nitride semiconductor research
T2 – Symposium on GaN and Related Alloys Held at the MRS Fall Meeting, NOV 29-DEC 03, 1999, BOSTON, MASSACHUSETTS |
Abbreviated Journal |
Mrs Internet J N S R |
| |
Volume |
5 |
Issue |
s:[1] |
Pages |
art. no.-W11.38 |
| |
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
| |
Abstract |
Rutherford backscattering and channeling spectrometry (RBS), photoluminescence (PL) spectroscopy and transmission electron microscopy (TEM) have been used to investigate macroscopic and microscopic segregation in MOCVD grown InGaN layers. The PL peak energy and In content (measured by RES) were mapped at a large number of distinct points on the samples. An indium concentration of 40%, the highest measured in this work, corresponds to a PL peak of 710 nn strongly suggesting that the light-emitting regions of the sample me very indium-rich compared to the average measured by RES. Cross-sectional TEM observations show distinctive layering of the InGaN films. The TEM study further reveals that these layers consist of amorphous pyramidal contrast features with sizes of order 10 nm The composition of these specific contrast features is shown to be In-rich compared to the nitride matrix. |
| |
Address |
|
| |
Corporate Author |
|
Thesis |
|
| |
Publisher |
Materials research society |
Place of Publication |
Warrendale |
Editor |
|
| |
Language |
|
Wos |
000090103600097 |
Publication Date |
0000-00-00 |
| |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
| |
Series Volume |
|
Series Issue |
|
Edition |
|
| |
ISSN |
1092-5783 |
ISBN |
|
Additional Links |
UA library record; WoS full record; |
| |
Impact Factor |
|
Times cited |
|
Open Access |
|
| |
Notes |
|
Approved |
Most recent IF: NA |
| |
Call Number |
UA @ lucian @ c:irua:103471 |
Serial |
423 |
| Permanent link to this record |
| |
|
| |
|
Author |
Schryvers, D.; Goessens, C.; van Renterghem, W.; van Landuyt, J.; de Keyzer, R. |
| |
Title |
Conventional and HREM study of structural defects in nanostructured silver halides |
Type |
P3 Proceeding |
| |
Year |
1998 |
Publication |
|
Abbreviated Journal |
|
| |
Volume |
|
Issue |
|
Pages |
1-6 |
| |
Keywords |
P3 Proceeding; Electron microscopy for materials research (EMAT) |
| |
Abstract |
|
| |
Address |
|
| |
Corporate Author |
|
Thesis |
|
| |
Publisher |
|
Place of Publication |
Antwerpen |
Editor |
|
| |
Language |
|
Wos |
|
Publication Date |
0000-00-00 |
| |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
| |
Series Volume |
|
Series Issue |
|
Edition |
|
| |
ISSN |
|
ISBN |
|
Additional Links |
UA library record |
| |
Impact Factor |
|
Times cited |
|
Open Access |
|
| |
Notes |
|
Approved |
Most recent IF: NA |
| |
Call Number |
UA @ lucian @ c:irua:29681 |
Serial |
509 |
| Permanent link to this record |
| |
|
| |
|
Author |
Van Renterghem, W.; Schryvers, D.; van Landuyt, J.; Bollen, D.; Van Roost, C.; De Keyzer, R.B. |
| |
Title |
Defect induced thickness growth in silver chloride (111) tabular crystals: a TEM study |
Type |
P1 Proceeding |
| |
Year |
2000 |
Publication |
|
Abbreviated Journal |
|
| |
Volume |
|
Issue |
|
Pages |
38-43 |
| |
Keywords |
P1 Proceeding; Engineering sciences. Technology; Electron microscopy for materials research (EMAT) |
| |
Abstract |
Defects in AgG tabular crystals with {111} surfaces are characterised by transmission electron microscopy (TEM) and their influence on the growth process is discussed. In the tabular crystals, twins parallel to the tabular face as well as dislocations along different directions are observed. The twins induce the tabular growth, while the dislocations do not influence the morphology. In 10 to 30% of the crystals that have been characterised, thickness growth is observed and it is shown that in all cases twins on other planes than the tabular ones are present. Two configurations occur more frequently and are analysed in detail. For the first group, twins parallel to the tabular face as well as a microtwin along a non-parallel {111} plane and ending inside the crystal are present. In the crystals of the second group only one extra non-parallel twin occurs giving rise to a bicrystal built up by a tetrahedral shaped part and a flat triangular or trapezoidal part. More complex twin configurations give rise to various, less characteristic morphologies. |
| |
Address |
|
| |
Corporate Author |
|
Thesis |
|
| |
Publisher |
Soc imaging science technology |
Place of Publication |
Springfield |
Editor |
|
| |
Language |
|
Wos |
000183315900012 |
Publication Date |
0000-00-00 |
| |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
| |
Series Volume |
|
Series Issue |
|
Edition |
|
| |
ISSN |
0-89208-229-1 |
ISBN |
|
Additional Links |
UA library record; WoS full record; |
| |
Impact Factor |
|
Times cited |
|
Open Access |
|
| |
Notes |
|
Approved |
Most recent IF: NA |
| |
Call Number |
UA @ lucian @ c:irua:95777 |
Serial |
617 |
| Permanent link to this record |
| |
|
| |
|
Author |
van Renterghem, W.; Schryvers, D.; van Landuyt, J.; van Roost, C. |
| |
Title |
Defect related growth of tabular AgCl(100) crystals: a TEM study |
Type |
P1 Proceeding |
| |
Year |
1998 |
Publication |
|
Abbreviated Journal |
|
| |
Volume |
|
Issue |
|
Pages |
389-390 |
| |
Keywords |
P1 Proceeding; Electron microscopy for materials research (EMAT) |
| |
Abstract |
|
| |
Address |
|
| |
Corporate Author |
|
Thesis |
|
| |
Publisher |
|
Place of Publication |
Cancun |
Editor |
|
| |
Language |
|
Wos |
000077019900191 |
Publication Date |
0000-00-00 |
| |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
| |
Series Volume |
|
Series Issue |
|
Edition |
|
| |
ISSN |
|
ISBN |
|
Additional Links |
UA library record; WoS full record; |
| |
Impact Factor |
|
Times cited |
|
Open Access |
|
| |
Notes |
|
Approved |
Most recent IF: NA |
| |
Call Number |
UA @ lucian @ c:irua:29678 |
Serial |
618 |
| Permanent link to this record |
| |
|
| |
|
Author |
van Renterghem, W.; Goessens, C.; Schryvers, D.; van Landuyt, J.; Verrept, P.; Bollen, D.; van Roost, C.; de Keyzer, R. |
| |
Title |
Defects in AgCl and AgBr(100) tabular crystals studied by TEM |
Type |
P3 Proceeding |
| |
Year |
1998 |
Publication |
|
Abbreviated Journal |
|
| |
Volume |
|
Issue |
|
Pages |
6-11 |
| |
Keywords |
P3 Proceeding; Electron microscopy for materials research (EMAT) |
| |
Abstract |
|
| |
Address |
|
| |
Corporate Author |
|
Thesis |
|
| |
Publisher |
|
Place of Publication |
Antwerpen |
Editor |
|
| |
Language |
|
Wos |
|
Publication Date |
0000-00-00 |
| |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
| |
Series Volume |
|
Series Issue |
|
Edition |
|
| |
ISSN |
|
ISBN |
|
Additional Links |
UA library record |
| |
Impact Factor |
|
Times cited |
|
Open Access |
|
| |
Notes |
|
Approved |
Most recent IF: NA |
| |
Call Number |
UA @ lucian @ c:irua:29680 |
Serial |
628 |
| Permanent link to this record |
| |
|
| |
|
Author |
Hens, S.; Bender, H.; Donaton, R.A.; Maex, K.; Vanhaelemeersch, S.; van Landuyt, J. |
| |
Title |
EFTEM study of plasma etched low-k Si-O-C dielectrics |
Type |
A1 Journal article |
| |
Year |
2001 |
Publication |
Institute of physics conference series
T2 – Royal-Microscopical-Society Conference on Microscopy of Semiconducting, Materials, MAR 25-29, 2001, UNIV OXFORD, OXFORD, ENGLAND |
Abbreviated Journal |
|
| |
Volume |
|
Issue |
169 |
Pages |
415-418 |
| |
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
| |
Abstract |
Materials with low dielectric constant ("low-k'') in combination with Cu metallization are replacing the oxide based dielectrics with Al metallization in future generations of micro-electronic devices. In this work, a carbon doped oxide low-k dielectric material is studied after different kinds of etch/strip steps in single damascene Cu. filled line structures. Interline capacitance measurements indicate a dependence of the dielectric constant on the strip conditions. EFTEM is used to study the composition of the dielectric material and the modification of the low-k material at the sidewall of the etched structures for the various treatment conditions. |
| |
Address |
|
| |
Corporate Author |
|
Thesis |
|
| |
Publisher |
|
Place of Publication |
|
Editor |
|
| |
Language |
|
Wos |
|
Publication Date |
0000-00-00 |
| |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
| |
Series Volume |
|
Series Issue |
|
Edition |
|
| |
ISSN |
0-7503-0818-4; 0951-3248 |
ISBN |
|
Additional Links |
UA library record; WoS full record; |
| |
Impact Factor |
|
Times cited |
|
Open Access |
|
| |
Notes |
|
Approved |
Most recent IF: NA |
| |
Call Number |
UA @ lucian @ c:irua:103432 |
Serial |
877 |
| Permanent link to this record |
| |
|
| |
|
Author |
Amelinckx, S.; van Dyck, D.; van Landuyt, J.; Van Tendeloo, G. |
| |
Title |
Electron microscopy: principles and fundamentals |
Type |
ME1 Book as editor or co-editor |
| |
Year |
1997 |
Publication |
|
Abbreviated Journal |
|
| |
Volume |
|
Issue |
|
Pages |
|
| |
Keywords |
ME1 Book as editor or co-editor; Electron microscopy for materials research (EMAT); Vision lab |
| |
Abstract |
|
| |
Address |
|
| |
Corporate Author |
|
Thesis |
|
| |
Publisher |
Vch |
Place of Publication |
Weinheim |
Editor |
|
| |
Language |
|
Wos |
|
Publication Date |
0000-00-00 |
| |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
| |
Series Volume |
|
Series Issue |
|
Edition |
|
| |
ISSN |
|
ISBN |
3-527-29479-1 |
Additional Links |
UA library record |
| |
Impact Factor |
|
Times cited |
|
Open Access |
|
| |
Notes |
|
Approved |
Most recent IF: NA |
| |
Call Number |
UA @ lucian @ c:irua:22089 |
Serial |
967 |
| Permanent link to this record |
| |
|
| |
|
Author |
Romano-Rodriguez, A.; Perez-Rodriguez, A.; Serre, C.; van Landuyt, J.; et al. |
| |
Title |
Epitaxial growth of \beta-SiC on ion-beam synthesized \beta-SiC : structural characterization |
Type |
A1 Journal article |
| |
Year |
2000 |
Publication |
Materials science forum
T2 – International Conference on Silicon Carbide and Related Materials, OCT 10-15, 1999, RES TRIANGLE PK, NORTH CAROLINA |
Abbreviated Journal |
Mater Sci Forum |
| |
Volume |
338-3 |
Issue |
|
Pages |
309-312 |
| |
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
| |
Abstract |
In this work we present for the first time, to our knowledge, the CVD epitaxial growth of beta -SiC using an ion beam synthesized (IBS) beta -SiC layer as seed, which has been formed by multiple implantation into Si wafers at 500 degreesC. The ion beam synthesized continuous layer is constituted by beta -SiC nanocrystals that are well oriented relative to the silicon substrate. Comparison of the epitaxial growth on these samples with that on silicon test samples, both on and off-axis, is performed. The results show that the epitaxial growth can be achieved on the IBS samples without the need of the carbonization step and that the structural quality of the CVD layer is comparable to that obtained on a carbonized silicon sample. Improvement of the quality of the deposited layer is proposed. |
| |
Address |
|
| |
Corporate Author |
|
Thesis |
|
| |
Publisher |
Trans tech publications ltd |
Place of Publication |
Zurich-uetikon |
Editor |
|
| |
Language |
|
Wos |
000165996700075 |
Publication Date |
0000-00-00 |
| |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
| |
Series Volume |
|
Series Issue |
|
Edition |
|
| |
ISSN |
0255-5476 |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
| |
Impact Factor |
|
Times cited |
2 |
Open Access |
|
| |
Notes |
|
Approved |
Most recent IF: NA |
| |
Call Number |
UA @ lucian @ c:irua:104262 |
Serial |
1071 |
| Permanent link to this record |
| |
|
| |
|
Author |
Fedina, L.; Gutakovskii, A.; Aseev, A.; van Landuyt, J.; Vanhellemont, J. |
| |
Title |
Extended defects formation in Si crystals by clustering of intrinsic point defects studied by in-situ electron irradiation in an HREM |
Type |
A1 Journal article |
| |
Year |
1999 |
Publication |
Physica status solidi: A: applied research
T2 – International Conference on Extended Defects in Semiconductors (EDS 98), Sept. 06-11, 1998, Jaszowiec, Poland |
Abbreviated Journal |
Phys Status Solidi A |
| |
Volume |
171 |
Issue |
1 |
Pages |
147-157 |
| |
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
| |
Abstract |
In situ irradiation experiments in a high resolution electron microscope JEOL-4000EX at room temperature resulted in discovery of the isolated and combined clustering of vacancies and self-interstitial atoms on {111}- and {113}-habit planes both leading to an extended defect formation in Si crystals. The type of the defect is strongly affected by the type of supersaturation of point defects depending on the crystal thickness during electron irradiation. Because of the existence of energy barriers against recombination of interstitials with the extended aggregates of vacancies, a large family of intermediate defect configurations (IDCs) is formed on {113}- and {111}-habit planes at a low temperature under interstitial supersaturation in addition to the well-known {133}-defects of interstitial type. The formation of metastable IDCs inside vacancy aggregates prevents a way of recombination of defects in extended shape. |
| |
Address |
|
| |
Corporate Author |
|
Thesis |
|
| |
Publisher |
Wiley |
Place of Publication |
Berlin |
Editor |
|
| |
Language |
|
Wos |
000078539700020 |
Publication Date |
2002-09-10 |
| |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
| |
Series Volume |
|
Series Issue |
|
Edition |
|
| |
ISSN |
0031-8965;1521-396X; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
| |
Impact Factor |
|
Times cited |
40 |
Open Access |
|
| |
Notes |
|
Approved |
Most recent IF: NA |
| |
Call Number |
UA @ lucian @ c:irua:95798 |
Serial |
1152 |
| Permanent link to this record |
| |
|
| |
|
Author |
Fedina, L.; Gutakovskii, A.; Aseev, A.; van Landuyt, J.; Vanhellemont, J. |
| |
Title |
Extended defects formation in Si crystals by clustering of intrinsic point defects studied by in-situ irradiation in an HREM |
Type |
A1 Journal article |
| |
Year |
1999 |
Publication |
Physica status solidi: A: applied research |
Abbreviated Journal |
Phys Status Solidi A |
| |
Volume |
171 |
Issue |
1 |
Pages |
147-157 |
| |
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
| |
Abstract |
|
| |
Address |
|
| |
Corporate Author |
|
Thesis |
|
| |
Publisher |
|
Place of Publication |
Berlin |
Editor |
|
| |
Language |
|
Wos |
000078539700020 |
Publication Date |
0000-00-00 |
| |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
| |
Series Volume |
|
Series Issue |
|
Edition |
|
| |
ISSN |
0031-8965 |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
| |
Impact Factor |
|
Times cited |
40 |
Open Access |
|
| |
Notes |
|
Approved |
Most recent IF: NA |
| |
Call Number |
UA @ lucian @ c:irua:29687 |
Serial |
1153 |
| Permanent link to this record |
| |
|
| |
|
Author |
Amelinckx, S.; van Dyck, D.; van Landuyt, J.; Van Tendeloo, G. |
| |
Title |
Handbook of microscopy: applications in materials science, solid-state physics and chemistry |
Type |
ME1 Book as editor or co-editor |
| |
Year |
1997 |
Publication |
|
Abbreviated Journal |
|
| |
Volume |
|
Issue |
|
Pages |
|
| |
Keywords |
ME1 Book as editor or co-editor; Electron microscopy for materials research (EMAT); Vision lab |
| |
Abstract |
|
| |
Address |
|
| |
Corporate Author |
|
Thesis |
|
| |
Publisher |
Vch |
Place of Publication |
Weinheim |
Editor |
|
| |
Language |
|
Wos |
|
Publication Date |
0000-00-00 |
| |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
| |
Series Volume |
|
Series Issue |
|
Edition |
|
| |
ISSN |
|
ISBN |
3-527-29280-2 |
Additional Links |
UA library record |
| |
Impact Factor |
|
Times cited |
|
Open Access |
|
| |
Notes |
|
Approved |
Most recent IF: NA |
| |
Call Number |
UA @ lucian @ c:irua:21417 |
Serial |
1407 |
| Permanent link to this record |
| |
|
| |
|
Author |
Teodorescu, V.S.; Nistor, L.C.; van Landuyt, J. |
| |
Title |
High resolution TEM observation of in situ colloid formation in CaF2 crystals |
Type |
A1 Journal article |
| |
Year |
1997 |
Publication |
Materials science forum |
Abbreviated Journal |
|
| |
Volume |
239-241 |
Issue |
|
Pages |
671-674 |
| |
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
| |
Abstract |
|
| |
Address |
|
| |
Corporate Author |
|
Thesis |
|
| |
Publisher |
|
Place of Publication |
Lausanne |
Editor |
|
| |
Language |
|
Wos |
A1997BH33W00145 |
Publication Date |
0000-00-00 |
| |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
| |
Series Volume |
|
Series Issue |
|
Edition |
|
| |
ISSN |
0255-5476; 1662-9752 |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
| |
Impact Factor |
|
Times cited |
3 |
Open Access |
|
| |
Notes |
|
Approved |
Most recent IF: NA |
| |
Call Number |
UA @ lucian @ c:irua:21404 |
Serial |
1460 |
| Permanent link to this record |
| |
|
| |
|
Author |
van Landuyt, J.; Van Tendeloo, G. |
| |
Title |
HREM for characterisation of nanoscale microstructures |
Type |
P3 Proceeding |
| |
Year |
1998 |
Publication |
|
Abbreviated Journal |
|
| |
Volume |
|
Issue |
|
Pages |
15-18 |
| |
Keywords |
P3 Proceeding; Electron microscopy for materials research (EMAT) |
| |
Abstract |
|
| |
Address |
|
| |
Corporate Author |
|
Thesis |
|
| |
Publisher |
|
Place of Publication |
Kyoto |
Editor |
|
| |
Language |
|
Wos |
|
Publication Date |
0000-00-00 |
| |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
| |
Series Volume |
|
Series Issue |
|
Edition |
|
| |
ISSN |
|
ISBN |
|
Additional Links |
UA library record |
| |
Impact Factor |
|
Times cited |
|
Open Access |
|
| |
Notes |
|
Approved |
Most recent IF: NA |
| |
Call Number |
UA @ lucian @ c:irua:25687 |
Serial |
1499 |
| Permanent link to this record |
| |
|
| |
|
Author |
Nistor, L.; Bender, H.; van Landuyt, J.; Nemeth, S.; Boeve, H.; De Boeck, J.; Borghs, G. |
| |
Title |
HREM investigation of a Fe/GaN/Fe tunnel junction |
Type |
A1 Journal article |
| |
Year |
2001 |
Publication |
Institute of physics conference series
T2 – Royal-Microscopical-Society Conference on Microscopy of Semiconducting, Materials, MAR 25-29, 2001, Univ of Oxford, Oxford, England |
Abbreviated Journal |
|
| |
Volume |
|
Issue |
169 |
Pages |
53-56 |
| |
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
| |
Abstract |
The structure of Fe/GaN/Fe ferromagnetic electrodes is studied by high resolution transmission electron microscopy. The layers grow epitaxially on the GaAs substrate with the top Fe layer 90degrees rotated compared to the bottom one. The interfaces are quite rough. There is an indication of the possible occurrence of Fe3GaAs formation on the GaAs interface. |
| |
Address |
|
| |
Corporate Author |
|
Thesis |
|
| |
Publisher |
IOP Publishing |
Place of Publication |
Bristol |
Editor |
|
| |
Language |
|
Wos |
|
Publication Date |
0000-00-00 |
| |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
| |
Series Volume |
|
Series Issue |
|
Edition |
|
| |
ISSN |
0-7503-0818-4 |
ISBN |
|
Additional Links |
UA library record; WoS full record; |
| |
Impact Factor |
|
Times cited |
|
Open Access |
|
| |
Notes |
|
Approved |
Most recent IF: NA |
| |
Call Number |
UA @ lucian @ c:irua:95715 |
Serial |
1503 |
| Permanent link to this record |
| |
|
| |
|
Author |
Nistor, L.C.; van Landuyt, J.; Dincã, G. |
| |
Title |
HREM of defects in cubic boron nitride single crystals |
Type |
P1 Proceeding |
| |
Year |
1998 |
Publication |
|
Abbreviated Journal |
|
| |
Volume |
|
Issue |
|
Pages |
695-696 |
| |
Keywords |
P1 Proceeding; Electron microscopy for materials research (EMAT) |
| |
Abstract |
|
| |
Address |
|
| |
Corporate Author |
|
Thesis |
|
| |
Publisher |
|
Place of Publication |
Cancun |
Editor |
|
| |
Language |
|
Wos |
000077019900341 |
Publication Date |
0000-00-00 |
| |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
| |
Series Volume |
|
Series Issue |
|
Edition |
|
| |
ISSN |
|
ISBN |
|
Additional Links |
UA library record; WoS full record; |
| |
Impact Factor |
|
Times cited |
|
Open Access |
|
| |
Notes |
|
Approved |
Most recent IF: NA |
| |
Call Number |
UA @ lucian @ c:irua:29679 |
Serial |
1508 |
| Permanent link to this record |
| |
|
| |
|
Author |
Fedina, L.; Lebedev, O.I.; Van Tendeloo, G.; van Landuyt, J. |
| |
Title |
In-situ HREM irradiation study of point defect clustering in strained GexSi1-x/(001)Si heterostructure |
Type |
A1 Journal article |
| |
Year |
1997 |
Publication |
Conference series of the Institute of Physics |
Abbreviated Journal |
|
| |
Volume |
157 |
Issue |
|
Pages |
55-58 |
| |
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
| |
Abstract |
|
| |
Address |
|
| |
Corporate Author |
|
Thesis |
|
| |
Publisher |
|
Place of Publication |
London |
Editor |
|
| |
Language |
|
Wos |
000071954600008 |
Publication Date |
0000-00-00 |
| |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
| |
Series Volume |
|
Series Issue |
|
Edition |
|
| |
ISSN |
0305-2346 |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
| |
Impact Factor |
|
Times cited |
1 |
Open Access |
|
| |
Notes |
|
Approved |
Most recent IF: NA |
| |
Call Number |
UA @ lucian @ c:irua:21432 |
Serial |
1578 |
| Permanent link to this record |
| |
|
| |
|
Author |
Fedina, L.; Gutakovskii, A.; Aseev, A.; van Landuyt, J.; Vanhellemont, J. |
| |
Title |
Intrinsic point defect clustering in Si: a study by HVEM and HREM in situ electron irradiation |
Type |
H3 Book chapter |
| |
Year |
1997 |
Publication |
|
Abbreviated Journal |
|
| |
Volume |
|
Issue |
|
Pages |
63-92 |
| |
Keywords |
H3 Book chapter; Electron microscopy for materials research (EMAT) |
| |
Abstract |
|
| |
Address |
|
| |
Corporate Author |
|
Thesis |
|
| |
Publisher |
Kluwer Academic |
Place of Publication |
s.l. |
Editor |
|
| |
Language |
|
Wos |
|
Publication Date |
0000-00-00 |
| |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
| |
Series Volume |
|
Series Issue |
|
Edition |
|
| |
ISSN |
|
ISBN |
|
Additional Links |
UA library record |
| |
Impact Factor |
|
Times cited |
|
Open Access |
|
| |
Notes |
|
Approved |
Most recent IF: NA |
| |
Call Number |
UA @ lucian @ c:irua:21412 |
Serial |
1718 |
| Permanent link to this record |
