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Author Groat, L.A.; Kek, S.; Bismayer, U.; Schmidt, C.; Krane, H.G.; Meyer, H.; Nistor, L.; Van Tendeloo, G.
Title A synchrotron radiation, HRTEM, X-ray powder diffraction, and Raman spectroscopic study of malayaite, CaSnSiO5 Type A1 Journal article
Year 1996 Publication The American mineralogist Abbreviated Journal Am Mineral
Volume 81 Issue 5/6 Pages 595-602
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract Synchrotron radiation, high-resolution transmission electron microscopy (HRTEM), X-ray powder diffraction, and Raman spectroscopy were used to study the structure and thermal behavior of malayaite, CaSnSiO5. No indications of deviation from A2/a symmetry and no structural transitions were observed between 100 and 870 K. HRTEM revealed that the material is free of domains and antiphase boundaries. However, the lattice constants, cell volume, and Raman-active phonons show a thermal discontinuity near 500 K, which is possibly related to variation of the coordination sphere around the highly anisotropic Ca position.
Address
Corporate Author Thesis
Publisher Place of Publication Washington, D.C. Editor
Language Wos A1996UP41100006 Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0003-004x ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor (up) 1.964 Times cited 19 Open Access
Notes Approved no
Call Number UA @ lucian @ c:irua:16862 Serial 3407
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Author Teodorescu, V.; Nistor, L.; Bender, H.; Steegen, A.; Lauwers, A.; Maex, K.; van Landuyt, J.
Title In situ transmission electron microscopy study of Ni silicide phases formed on (001) Si active lines Type A1 Journal article
Year 2001 Publication Journal of applied physics Abbreviated Journal J Appl Phys
Volume 90 Issue 1 Pages 167-174
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract The formation of Ni silicides is studied by transmission electron microscopy during in situ heating experiments of 12 nm Ni layers on blanket silicon, or in patterned structures covered with a thin chemical oxide. It is shown that the first phase formed is the NiSi2 which grows epitaxially in pyramidal crystals. The formation of NiSi occurs quite abruptly around 400 degreesC when a monosilicide layer covers the disilicide grains and the silicon in between. The NiSi phase remains stable up to 800 degreesC, at which temperature the layer finally fully transforms to NiSi2. The monosilicide grains show different epitaxial relationships with the Si substrate. Ni2Si is never observed. (C) 2001 American Institute of Physics.
Address
Corporate Author Thesis
Publisher American Institute of Physics Place of Publication New York, N.Y. Editor
Language Wos 000169361100023 Publication Date 2002-07-26
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0021-8979; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor (up) 2.068 Times cited 97 Open Access
Notes Approved Most recent IF: 2.068; 2001 IF: 2.128
Call Number UA @ lucian @ c:irua:102855 Serial 1587
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Author Epurescu, G.; Dinescu, G.; Moldovan, A.; Birjega, R.; Dipietrantonio, F.; Verona, E.; Verardi, P.; Nistor, L.C.; Ghica, C.; Van Tendeloo, G.; Dinescu, A.
Title P-type ZnO thin films grown by RF plasma beam assisted Pulsed Laser Deposition Type A1 Journal article
Year 2007 Publication Superlattices and microstructures Abbreviated Journal Superlattice Microst
Volume 42 Issue 1-6 Pages 79-84
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication London Editor
Language Wos 000250271200015 Publication Date 2007-08-01
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0749-6036; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor (up) 2.123 Times cited 19 Open Access
Notes Approved Most recent IF: 2.123; 2007 IF: 1.344
Call Number UA @ lucian @ c:irua:66632 Serial 2549
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Author Nistor, L.C.; Van Tendeloo, G.; Amelinckx, S.
Title Defects and phase transformation in monclinic natural hollandite: BaxMn8O16 Type A1 Journal article
Year 1994 Publication Journal of solid state chemistry Abbreviated Journal J Solid State Chem
Volume 109 Issue Pages 152-165
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication London Editor
Language Wos A1994MY48800024 Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0022-4596 ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor (up) 2.133 Times cited 13 Open Access
Notes Approved no
Call Number UA @ lucian @ c:irua:10023 Serial 626
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Author Nistor, L.C.; Van Tendeloo, G.; Amelinckx, S.
Title Defects and phase transition in monoclinic natural hollandite : BaxMn8O16 Type A1 Journal article
Year 1994 Publication Journal of solid state chemistry Abbreviated Journal J Solid State Chem
Volume 109 Issue 1 Pages 152-165
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication London Editor
Language Wos A1994MY48800024 Publication Date 2002-10-07
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0022-4596; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor (up) 2.133 Times cited 13 Open Access
Notes Approved no
Call Number UA @ lucian @ c:irua:99918 Serial 627
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Author Shpanchenko, R.V.; Nistor, L.; Van Tendeloo, G.; Amelinckx, S.; Antipov, E.V.; Kovba, L.M.
Title High resolution electron microscopic study of Ba7Sc6Al2O19 and related phases Type A1 Journal article
Year 1994 Publication Journal of solid state chemistry Abbreviated Journal J Solid State Chem
Volume 113 Issue Pages 193-203
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication London Editor
Language Wos A1994PP02200027 Publication Date 2002-10-07
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0022-4596; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor (up) 2.133 Times cited 3 Open Access
Notes Approved no
Call Number UA @ lucian @ c:irua:10036 Serial 1443
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Author Nistor, L.; Van Tendeloo, G.; Amelinckx, S.; Kahlenberg, V.; Böhm, H.
Title In situ study of the phase transition in Bi2Ti4O11 Type A1 Journal article
Year 1995 Publication Journal of solid state chemistry Abbreviated Journal J Solid State Chem
Volume 119 Issue Pages 281-288
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication London Editor
Language Wos A1995TC99800008 Publication Date 2003-01-09
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0022-4596; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor (up) 2.133 Times cited 10 Open Access
Notes Approved no
Call Number UA @ lucian @ c:irua:13325 Serial 1584
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Author Shpanchenko, R.V.; Nistor, L.; Van Tendeloo, G.; van Landuyt, J.; Amelinckx, S.
Title Structural studies on new ternary oxides Ba8Ta4Ti3O24 and Ba10Ta7.04Ti1.2O30 Type A1 Journal article
Year 1995 Publication Journal of solid state chemistry Abbreviated Journal J Solid State Chem
Volume 114 Issue 2 Pages 560-574
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract The ternary oxides Ba8Ta4Ti3O24 and Ba10Ta7.04Ti1.2O30 were synthesized and their crystal structures and defects were studied by means of X-ray powder diffraction, electron diffraction, and high resolution electron microscopy. The crystal structure of Ba8Ta4Ti3O24 is based on the 8H (cchc)(2) close-packed stacking (a 10.0314 Angstrom, c = 18.869 Angstrom, SG P6(3)/mcm, Z = 3) and that of Ba10Ta7.04Ti1.2O30 and on the 10H (cchcc)(2) close-packed stacking (a = 5.7981 Angstrom, c = 23.755 Angstrom, SG P6(3)/mmc, Z = 1) of BaO3 layers. The structural refinements gave the following values for the R factors for Ba8Ta4Ti3O24 (Ba10Ta7.04Ti1.2O30) R(I) = 0.041 (0.039), R(P) = 0.108 (0.118), and R(wP) = 0.094 (0.099). The main feature of both structures is the presence of two types of face-sharing octahedra (FSO) with different occupancies by Ta atoms, Ti atoms, and vacancies, which results in the formation of a superstructure. It was shown that in the Ba8Ta4Ti3O24 structure these pairs of FSO occur in an ordered fashion and in the Ba10Ta7.04Ti1.2O30 structure in a disordered fashion. The existence of the wide range of solid solutions was shown to be also a consequence of the presence of one of the two types of face-sharing octahedra. (C) 1995 Academic Press, Inc,
Address
Corporate Author Thesis
Publisher Place of Publication London Editor
Language Wos A1995QH33100040 Publication Date 2002-10-07
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0022-4596; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor (up) 2.133 Times cited 23 Open Access
Notes Approved
Call Number UA @ lucian @ c:irua:13289 Serial 3261
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Author Shpanchenko, R.V.; Abakumov, A.M.; Antipov, E.V.; Nistor, L.; Van Tendeloo, G.; Amelinckx, S.
Title Structural study of the new complex oxides Ba5-ySryR2-xAl2Zr1+xO13+x/2 (R=Gd-Lu, Y, Sc) Type A1 Journal article
Year 1995 Publication Journal of solid state chemistry Abbreviated Journal J Solid State Chem
Volume 118 Issue Pages 180-192
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication London Editor
Language Wos A1995RN49200028 Publication Date 2002-10-07
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0022-4596; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor (up) 2.133 Times cited 8 Open Access
Notes Approved
Call Number UA @ lucian @ c:irua:13315 Serial 3263
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Author Teodorescu, V.S.; Nistor, L.C.; van Landuyt, J.; Dinescu, M.
Title TEM study of laser induced phase transition in iron thin films Type A1 Journal article
Year 1994 Publication Materials research bulletin Abbreviated Journal Mater Res Bull
Volume 29 Issue 1 Pages 63-71
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract Laser induced phase transition from b.c.c.(alpha) to f.c.c.(gamma) iron thin films is studied by high resolution TEM. The iron film has been covered on both sides with carbon layers to protect it against oxidation. Single pulse, tau FWHM = 20ns KrF (lambda = 248nm) excimer laser irradiation was performed in air with the film on the substrate. The laser pulse acts like a heat pulse followed by a rapid quenching revealing sequential aspects of the phase transition process. The presence of a fine mixture of the alpha + gamma phases between the alpha and gamma regions of the film has been interpreted as an incomplet transformation. The results are explained by assuming that the transformation took place via a phonon drag mechanism.
Address
Corporate Author Thesis
Publisher Place of Publication New York, N.Y. Editor
Language Wos A1994ML03000008 Publication Date 2003-06-21
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0025-5408; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor (up) 2.288 Times cited 2 Open Access
Notes Approved no
Call Number UA @ lucian @ c:irua:99945 Serial 3488
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Author Nistor, L.; Nistor, S.V.; Dincã, G.; van Landuyt, J.; Schoemaker, D.; Copaciu, V.; Georgeoni, P.; Arnici, N.
Title High resolution electron microscopy and electron spin resonance studies on cubic boron nitride crystals made by high-pressure/high-temperature synthesis Type A1 Journal article
Year 1999 Publication Diamonds an related materials Abbreviated Journal Diam Relat Mater
Volume 8 Issue Pages 738-742
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos 000080437000123 Publication Date 2002-07-25
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0925-9635; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor (up) 2.561 Times cited 7 Open Access
Notes Approved Most recent IF: 2.561; 1999 IF: 1.924
Call Number UA @ lucian @ c:irua:27519 Serial 1445
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Author Nistor, L.; Buschmann, V.; Ralchenko, V.; Dinca, G.; Vlasov, I.; van Landuyt, J.; Fuess, H.
Title Microstructural characterization of diamond films deposited on c-BN crystals Type A1 Journal article
Year 2000 Publication Diamond and related materials T2 – 10th European Conference on Diamond, Diamond-Like Materials, Nitrides, and Silicon Carbide (Diamond 1999), SEP 12-17, 1999, PRAGUE, CZECH REPUBLIC Abbreviated Journal Diam Relat Mater
Volume 9 Issue 3-6 Pages 269-273
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract The morphology and structure of diamond films, deposited on cubic boron nitride (c-BN) crystals by microwave-plasma-enhanced chemical vapor deposition, is studied by high-resolution scanning electron microscopy and micro-Raman spectroscopy. The c-BN crystals, with sizes of 200 to 350 mu m and grown by a high-temperature/high-pressure technique, were embedded in a copper holder, and used as substrates in deposition runs of 15 min to 5 h. The nucleation centers for diamond appear as well-shaped cuboctahedral crystallites, having diameters of approximately 100 nm. With increasing deposition time the diamond crystallites grew larger, forming islands on the c-BN faces. In some cases, epitaxial growth was observed on the (111) c-BN faces where coalesced particles gave rise to very smooth regions. A number of diamond crystals with peculiar shapes are observed, such as a pseudo five-fold symmetry due to multiple twinning. Moreover, both randomly distributed carbon tubes, about 100 nn in diameter and 1 mu m in length, and spherically shaped features are observed in samples prepared under the typical conditions of diamond deposition, this effect being ascribed to the influence of plasma-sputtered copper contamination. Quite unusual diamond crystals with a deep, pyramidal-shaped hole in the middle grew on the copper substrate between the c-BN crystals. (C) 2000 Elsevier Science S.A. All rights reserved.
Address
Corporate Author Thesis
Publisher Place of Publication Amsterdam Editor
Language Wos 000087382400009 Publication Date 2002-07-26
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0925-9635; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor (up) 2.561 Times cited 9 Open Access
Notes Approved Most recent IF: 2.561; 2000 IF: 1.591
Call Number UA @ lucian @ c:irua:102877 Serial 2041
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Author Nistor, L.C.; van Landuyt, J.; Ralchenko, V.G.; Obratzova, E.D.; Smolin, A.A.
Title Nanocrystalline diamond films: transmission electron microscopy and Raman spectroscopy characterization Type A1 Journal article
Year 1997 Publication Diamond and related materials Abbreviated Journal Diam Relat Mater
Volume 6 Issue Pages 159-168
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Amsterdam Editor
Language Wos A1997WN37300021 Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0925-9635 ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor (up) 2.561 Times cited 116 Open Access
Notes Approved Most recent IF: 2.561; 1997 IF: 1.758
Call Number UA @ lucian @ c:irua:21406 Serial 2249
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Author Nistor, L.; Teodorescu, V.; Ghica, C.; van Landuyt, J.; Dinca, G.; Georgeoni, P.
Title The influence of the h-BN morphology and structure on the c-BN growth Type A1 Journal article
Year 2001 Publication Diamond and related materials T2 – 11th European Conference on Diamond, Diamond-like Materials, Carbon, Nanotubes, Nitrides and Silicon Carbide (Diamond 2000), SEP 03-08, 2000, OPORTO, PORTUGAL Abbreviated Journal Diam Relat Mater
Volume 10 Issue 3-7 Pages 1352-1356
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract The morphology and structure of hexagonal graphitic BN (h-BN) powders with graphitization indices GI <5, used as precursors for the synthesis of cubic BN (c-BN) crystals, has been investigated by transmission electron microscopy in diffraction contrast and high resolution. We show that besides the GI, which is a general parameter for controlling the structural quality of h-EN ponders, some other microstructural features strongly influence the synthesis of c-BN. In our opinion, the high reactivity of some h-BN powders results from the presence of some nucleation centers for c-BN, observed at the edges of the h-BN particles. They are formed by a rearrangement of the graphitic (0002) planes by bending back, joining in pairs and forming locally nanoarches (half nanotubes). In these particular places, the nature of bonding locally turns towards sp(3), as in the case of c-BN, (C) 2001 Elsevier Science B.V. All rights reserved.
Address
Corporate Author Thesis
Publisher Place of Publication Amsterdam Editor
Language Wos 000168730600206 Publication Date 2002-10-14
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0925-9635; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor (up) 2.561 Times cited 17 Open Access
Notes Approved Most recent IF: 2.561; 2001 IF: 1.902
Call Number UA @ lucian @ c:irua:103421 Serial 3586
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Author Ghica, C.; Nistor, L.C.; Bender, H.; Richard, O.; Van Tendeloo, G.; Ulyashin, A.
Title TEM characterization of extended defects induced in Si wafers by H-plasma treatment Type A1 Journal article
Year 2007 Publication Journal of physics: D: applied physics Abbreviated Journal J Phys D Appl Phys
Volume 40 Issue 2 Pages 395-400
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication London Editor
Language Wos 000243725800017 Publication Date 2007-01-06
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0022-3727;1361-6463; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor (up) 2.588 Times cited 10 Open Access
Notes Bil 01/73 Approved Most recent IF: 2.588; 2007 IF: 2.200
Call Number UA @ lucian @ c:irua:62601 Serial 3476
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Author Major, L.; Morgiel, J.; Major, B.; Lackner, J.M.; Waldhauser, W.; Ebner, R.; Nistor, L.; Van Tendeloo, G.
Title Crystallographic aspects related to advanced tribological multilayers of Cr/CrN and Ti/TiN types produced by pulsed laser deposition (PLD) Type A1 Journal article
Year 2006 Publication Surface and coatings technology Abbreviated Journal Surf Coat Tech
Volume 200 Issue 22/23 Pages 6190-6195
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Lausanne Editor
Language Wos 000237842300007 Publication Date 2005-12-10
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0257-8972; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor (up) 2.589 Times cited 32 Open Access
Notes Approved Most recent IF: 2.589; 2006 IF: 1.559
Call Number UA @ lucian @ c:irua:59459 Serial 586
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Author Nistor, L.C.; Nistor, S.V.; Dinca, G.; Georgeoni, P.; van Landuyt, J.; Manfredotti, C.; Vittone, E.
Title Microstructure and spectroscopy studies on cubic boron nitride synthesized under high-pressure conditions Type A1 Journal article
Year 2002 Publication Journal of physics : condensed matter Abbreviated Journal J Phys-Condens Mat
Volume 14 Issue 44 Pages 10983-10988
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract High-resolution electron microscopy (HREM) studies of the microstructure and specific defects in hexagonal boron nitride (h-BN) precursors and cubic boron nitride (c-BN) crystals made under high-pressure high-temperature conditions revealed the presence of half-nanotubes at the edges of the h-BN particles. Their sp(3) bonding tendency could strongly influence the nucleation rates of c-BN. The atomic resolution at extended dislocations was insufficient to allow us to determine the stacking fault energy in the c-BN crystals. Its mean value of 191 +/- 15 mJ m(-2) is of the same order of magnitude as that of diamond. High-frequency (94 GHz) electron paramagnetic resonance studies on c-BN single crystals have produced new data on the D1 centres associated with the boron species. Ion-beam-induced luminescence measurements have indicated that c-BN is a very interesting luminescent material, which is characterized by four luminescence bands and exhibits a better resistance to ionizing radiation than CVD diamond.
Address
Corporate Author Thesis
Publisher Place of Publication London Editor
Language Wos 000179541700114 Publication Date 2002-10-26
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0953-8984; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor (up) 2.649 Times cited 7 Open Access
Notes Approved Most recent IF: 2.649; 2002 IF: 1.775
Call Number UA @ lucian @ c:irua:103328 Serial 2061
Permanent link to this record
 

 
Author Nistor, L.; Bender, H.; Vantomme, A.; Wu, M.F.; van Landuyt, J.; O'Donnell, K.P.; Martin, R.; Jacobs, K.; Moerman, I.
Title Direct evidence of spontaneous quantum dot formation in a thick InGaN epilayer Type A1 Journal article
Year 2000 Publication Applied physics letters Abbreviated Journal Appl Phys Lett
Volume 77 Issue 4 Pages 507-509
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract We report a direct observation of quantum dots formed spontaneously in a thick InGaN epilayer by high resolution transmission electron microscopy. Investigation of a (280 nm thick) In0.22Ga0.78N single layer, emitting in the blue/green spectral region, reveals quantum dots with estimated sizes in the range of 1.5-3 nm. Such sizes are in very good agreement with calculations based on the luminescence spectra of this specimen. (C) 2000 American Institute of Physics. [S0003-6951(00)00930-X].
Address
Corporate Author Thesis
Publisher American Institute of Physics Place of Publication New York, N.Y. Editor
Language Wos 000088225400016 Publication Date 2002-07-26
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0003-6951; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor (up) 3.411 Times cited 44 Open Access
Notes Approved Most recent IF: 3.411; 2000 IF: 3.906
Call Number UA @ lucian @ c:irua:103448 Serial 712
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Author Nistor, S.V.; Stefan, M.; Nistor, L.C.; Goovaerts, E.; Van Tendeloo, G.
Title Incorporation and localization of substitutional Mn2+ ions in cubic ZnS quantum dots Type A1 Journal article
Year 2010 Publication Physical review : B : condensed matter and materials physics Abbreviated Journal Phys Rev B
Volume 81 Issue 3 Pages 035336,1-035336,6
Keywords A1 Journal article; Nanostructured and organic optical and electronic materials (NANOrOPT); Electron microscopy for materials research (EMAT)
Abstract Multifrequency electron paramagnetic resonance (EPR) and high resolution transmission electron microscopy (HRTEM) investigations were performed on small (2 nm) cubic ZnS nanocrystals (quantum dotsQDs) doped with 0.2% mol Mn2+, self-assembled into a mesoporous structure. The EPR data analysis shows that the substitutional Mn2+ ions are localized at Zn2+ sites subjected to a local axial lattice distortion, resulting in the observed zero-field-splitting parameter |D|=41×10−4 cm−1. The local distortion is attributed to the presence in the second shell of ligands of a stacking fault or twin, which alters the normal stacking sequence of the cubic structure. The HRTEM results confirm the presence of such extended planar defects in a large percentage of the investigated QDs, which makes possible the proposed substitutional Mn2+ impurity ions localization model. Based on these results it is suggested that the high doping levels of Mn2+ ions observed in cubic ZnS and possible in other II-VI semiconductor QDs prepared at low temperatures can be explained by the assistance of the extended lattice defects in the impurities incorporation.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos 000277970900007 Publication Date 2010-01-29
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1098-0121;1550-235X; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor (up) 3.836 Times cited 55 Open Access
Notes Fwo Approved Most recent IF: 3.836; 2010 IF: 3.774
Call Number UA @ lucian @ c:irua:83649 Serial 1597
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