|
“Theoretical model for the structural phase transition and the metal-insulator transition in polymerized KC60”. Verberck B, Nikolaev AV, Michel KH, Fullerenes, nanotubes, and carbon nanostructures
T2 –, 6th Biennial International Workshop on Fullerenes and Atomic Clusters, JUN 30-JUL 04, 2003, St Petersburg, RUSSIA 12, 243 (2004). http://doi.org/10.1081/FST-120027164
Abstract: The recently discovered structural phase transition in Polymerized KC60 at about 50K leads to a doubling of the unit cell volume and is accompanied by a metal-insulator transition. Here, we show that the ((a) over right arrow + (c) over right arrow, (b) over right arrow, (a) over right arrow – (c) over right arrow) superstructure results from orientational charge density waves along the polymer chains and correlated displacements of the K+ ions. The presented model can also account for the metal-insulator transition. The effect is specific for the space group Pmnn of KC60 and is absent in both Rb- and CsC60 (space group 12/m), in agreement with the present experimental knowledge of these compounds.
Keywords: A1 Journal article; Engineering sciences. Technology; Condensed Matter Theory (CMT)
Impact Factor: 1.35
DOI: 10.1081/FST-120027164
|
|
|
“Tubular fullerenes in carbon nanotubes”. Tarakina NV, Verberck B, Fullerenes, nanotubes, and carbon nanostructures 20, 538 (2012). http://doi.org/10.1080/1536383X.2012.656058
Abstract: We investigate the optimal orientations and positions of tubular fullerene molecules C-70, C-80 and C-90 encapsulated in single-walled carbon nanotubes (SWCNTs). We find that increasing the tube radius leads to the following succession of energetically stable regimes: 1) lying molecules positioned on the tube's long axis, 2) tilted molecules on the tube's long axis and 3) lying molecules shifted away from the tube's long axis. In the case of C-70 and C-80 molecules, standing on-axis configurations also occur. Our findings are relevant for the possible application of molecular-orientation-dependent electronic properties of fullerene nanopeapods.
Keywords: A1 Journal article; Engineering sciences. Technology; Condensed Matter Theory (CMT)
Impact Factor: 1.35
DOI: 10.1080/1536383X.2012.656058
|
|
|
“ALN nanoparticles XANES analysis: local atomic and electronic structure”. Soldatov A, Yalovega G, Smolentsev G, Kravtsova A, Lamoen D, Balasubramanian C, Marcelli A, Cinque G, Bellucci S, Nuclear Instruments &, Methods In Physics Research Section A-Accelerators Spectrometers Detectors And Associated Equipment 575, 85 (2007). http://doi.org/10.1016/j.nima.2007.01.031
Keywords: A1 Journal article; Electron Microscopy for Materials Science (EMAT);
Impact Factor: 1.362
Times cited: 3
DOI: 10.1016/j.nima.2007.01.031
|
|
|
“Dislocations and plasticity of experimentally deformed coesite”. Idrissi H, Cordier P, Jacob D, Walte N, European journal of mineralogy 20, 665 (2008). http://doi.org/10.1127/0935-1221/2008/0020-1849
Abstract: Dislocation microstructures have been characterized by transmission electron microscopy in polycrystalline coesite deformed experimentally at 4 GPa, 1200 degrees C. Burgers vectors have been determined by large-angle convergent-beam electron diffraction. Sample orientation was assisted by precession electron diffraction to overcome difficulties arising from pseudo-hexagonal symmetry. The results are explained by using a pseudo-hexagonal setting. We found that most dislocations observed are of the 1/3 < 2 (1) over bar(1) over bar0 > type. No clear glide plane was identified, suggesting that climb is activated under these conditions. This conclusion is supported by the observation of numerous subgrain boundaries. We have also observed some [00011 dislocations. Finally, the C12/cl space group to which coesite belongs being centred, an additional slip system is observed: 1/6[(1) over bar2 (1) over bar3](01 (1) over bar1) (1/2[(1) over bar 10](110) in the monoclinic setting).
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.362
Times cited: 5
DOI: 10.1127/0935-1221/2008/0020-1849
|
|
|
“First evidence of synthetic polygonal serpentines”. Devouard B, Baronnet A, Van Tendeloo G, Amelinckx S, European journal of mineralogy 9, 539 (1997)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.362
Times cited: 15
|
|
|
“High reflective mirrors for in-vessel applications in ITER”. Razdobarin AG, Mukhin EE, Semenov VV, YuTolstyakov S, Kochergin MM, Kurskiev GS, Podushnikova KA, Kirilenko DA, Sitnikova AA, Gorodetsky АЕ, Bukhovets VL, Zalavutdinov RK, Zakharov АP, Arkhipov II, Voitsenya VS, Bondarenko VN, Konovalov VG, Ryzhkov IV;, Nuclear instruments and methods in physics research : A: accelerators, spectrometers, detectors and associated equipment 623, 809 (2010). http://doi.org/10.1016/j.nima.2010.04.047
Abstract: The structure and surface morphology of aluminum and silver mirrors covered with protective dielectric oxide layer were studied by means of TEM and SEM. The presence of needle-like pores throughout the thickness of the ZrO(2) film and bubble-like pores in Al(2)O(3) was observed. The test for resistivity to deuterium ion bombardment shows that the exposition to a fluence of similar to 2 x 10(20) ions/cm(2) with the ion energy of 40-50 eV results in appearance of blisters on the surface of mirrors covered wit h Al(2)O(3). For the mirrors protected with ZrO(2) no noticeable changes in surface morphology and reflectivity were found even after order of magnitude higher ion fluence. The effect of different porous structures on blistering phenomena is discussed. (C) 2010 Elsevier B.V. All rights reserved.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 1.362
Times cited: 4
DOI: 10.1016/j.nima.2010.04.047
|
|
|
“High energy X-ray microscopy for characterisation of fuel particles”. Salbu B, Krekling T, Lind OC, Oughton DH, Drakopoulos M, Simionovici AS, Snigireva I, Snigirev A, Weitkamp T, Adams F, Janssens K, Kashparov VA, Nuclear instruments and methods in physics research : A: accelerators, spectrometers, detectors and associated equipment 467, 1249 (2001). http://doi.org/10.1016/S0168-9002(01)00641-6
Keywords: A1 Journal article; AXES (Antwerp X-ray Analysis, Electrochemistry and Speciation)
Impact Factor: 1.362
DOI: 10.1016/S0168-9002(01)00641-6
|
|
|
“Addition of yttrium into HfO2 films: microstructure and electrical properties”. Dubourdieu C, Rauwel E, Roussel H, Ducroquet F, Hollaender B, Rossell M, Van Tendeloo G, Lhostis S, Rushworth S, Journal of vacuum science and technology: A: vacuum surfaces and films 27, 503 (2009). http://doi.org/10.1116/1.3106627
Abstract: The cubic phase of HfO2 was stabilized by addition of yttrium in thin films grown on Si/SiO2 by metal-organic chemical vapor deposition. The cubic phase was obtained for contents of 6.5 at. % Y or higher at a temperature as low as 470 °C. The complete compositional range (from 1.5 to 99.5 at. % Y) was investigated. The crystalline structure of HfO2 was determined from x-ray diffraction, electron diffraction, and attenuated total-reflection infrared spectroscopy. For cubic films, the continuous increase in the lattice parameter indicates the formation of a solid-solution HfO2Y2O3. As shown by x-ray photoelectron spectroscopy, yttrium silicate is formed at the interface with silicon; the interfacial layer thickness increases with increasing yttrium content and increasing film thickness. The dependence of the intrinsic relative permittivity r as a function of Y content was determined. It exhibits a maximum of ~30 for ~8.8 at. % Y. The cubic phase is stable upon postdeposition high-temperature annealing at 900 °C under NH3.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.374
Times cited: 29
DOI: 10.1116/1.3106627
|
|
|
“Crystalline structure of very hard tungsten carbide thin films obtained by reactive pulsed laser deposition”. Mihailescu IN, Gyorgy E, Marin G, Popescu M, Teodorescu VS, van Landuyt J, Grivas C, Hatziapostolou A, Journal of vacuum science and technology: A: vacuum surfaces and films 17, 249 (1999). http://doi.org/10.1116/1.581579
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.374
Times cited: 8
DOI: 10.1116/1.581579
|
|
|
“Electromagnetic effects in high-frequency large-area capacitive discharges : a review”. Liu Y-X, Zhang Y-R, Bogaerts A, Wang Y-N, Journal of vacuum science and technology: A: vacuum surfaces and films 33, 020801 (2015). http://doi.org/10.1116/1.4907926
Abstract: In traditional capacitively coupled plasmas, the discharge can be described by an electrostatic model, in which the Poisson equation is employed to determine the electrostatic electric field. However, current plasma reactors are much larger and driven at a much higher frequency. If the excitation wavelength k in the plasma becomes comparable to the electrode radius, and the plasma skin depth d becomes comparable to the electrode spacing, the electromagnetic (EM) effects will become significant and compromise the plasma uniformity. In this regime, capacitive discharges have to be described by an EM model, i.e., the full set of Maxwells equations should be solved to address the EM effects. This paper gives an overview of the theory, simulation and experiments that have recently been carried out to understand these effects, which cause major uniformity problems in plasma processing for microelectronics and flat panel display industries. Furthermore, some methods for improving the plasma uniformity are also described and compared.
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 1.374
Times cited: 10
DOI: 10.1116/1.4907926
|
|
|
“Fluid simulation of the bias effect in inductive/capacitive discharges”. Zhang Y-R, Gao F, Li X-C, Bogaerts A, Wang Y-N, Journal of vacuum science and technology: A: vacuum surfaces and films 33, 061303 (2015). http://doi.org/10.1116/1.4928033
Abstract: Computer simulations are performed for an argon inductively coupled plasma (ICP) with a capacitive radio-frequency bias power, to investigate the bias effect on the discharge mode transition and on the plasma characteristics at various ICP currents, bias voltages, and bias frequencies. When the bias frequency is fixed at 13.56 MHz and the ICP current is low, e.g., 6A, the spatiotemporal averaged plasma density increases monotonically with bias voltage, and the bias effect is already prominent at a bias voltage of 90 V. The maximum of the ionization rate moves toward the bottom electrode, which indicates clearly the discharge mode transition in inductive/capacitive discharges. At higher ICP currents, i.e., 11 and 13 A, the plasma density decreases first and then increases with bias voltage, due to the competing mechanisms between the ion acceleration power dissipation and the capacitive power deposition. At 11 A, the bias effect is still important, but it is noticeable only at higher bias voltages. At 13 A, the ionization rate is characterized by a maximum at the reactor center near the dielectric window at all selected bias voltages, which indicates that the ICP power, instead of the bias power, plays a dominant role under this condition, and no mode transition is observed. Indeed, the ratio of the bias power to the total power is lower than 0.4 over a wide range of bias voltages, i.e., 0300V. Besides the effect of ICP current, also the effect of various bias frequencies is investigated. It is found that the modulation of the bias power to the spatiotemporal distributions of the ionization rate at 2MHz is strikingly different from the behavior observed at higher bias frequencies. Furthermore, the minimum of the plasma density appears at different bias voltages, i.e., 120V at 2MHz and 90V at 27.12 MHz.
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 1.374
Times cited: 9
DOI: 10.1116/1.4928033
|
|
|
“Influence of sticking coefficients on the behavior of sputtered atoms in an argon glow discharge: modeling and comparison with experiment”. Bogaerts A, Naylor J, Hatcher M, Jones WJ, Mason R, Journal of vacuum science and technology: A: vacuum surfaces and films 16, 2400 (1998). http://doi.org/10.1116/1.581359
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 1.374
Times cited: 12
DOI: 10.1116/1.581359
|
|
|
“Modeling and experimental investigation of the plasma uniformity in CF4/O2 capacitively coupled plasmas, operating in single frequency and dual frequency regime”. Zhang Y-R, Tinck S, De Schepper P, Wang Y-N, Bogaerts A, Journal of vacuum science and technology: A: vacuum surfaces and films 33, 021310 (2015). http://doi.org/10.1116/1.4906819
Abstract: A two-dimensional hybrid Monte Carlofluid model, incorporating a full-wave solution of Maxwell's equations, is employed to describe the behavior of high frequency (HF) and very high frequency capacitively coupled plasmas (CCPs), operating both at single frequency (SF) and dual frequency (DF) in a CF4/O2 gas mixture. First, the authors investigate the plasma composition, and the simulations reveal that besides CF4 and O2, also COF2, CF3, and CO2 are important neutral species, and CF+3 and F− are the most important positive and negative ions. Second, by comparing the results of the model with and without taking into account the electromagnetic effects for a SF CCP, it is clear that the electromagnetic effects are important, both at 27 and 60 MHz, because they affect the absolute values of the calculation results and also (to some extent) the spatial profiles, which accordingly affects the uniformity in plasma processing. In order to improve the plasma radial uniformity, which is important for the etch process, a low frequency (LF) source is added to the discharge. Therefore, in the major part of the paper, the plasma uniformity is investigated for both SF and DF CCPs, operating at a HF of 27 and 60 MHz and a LF of 2 MHz. For this purpose, the authors measure the etch rates as a function of position on the wafer in a wide range of LF powers, and the authors compare them with the calculated fluxes toward the wafer of the plasma species playing a role in the etch process, to explain the trends in the measured etch rate profiles. It is found that at a HF of 60 MHz, the uniformity of the etch rate is effectively improved by adding a LF power of 2 MHz and 300 W, while its absolute value increases by about 50%, thus a high etch rate with a uniform distribution is observed under this condition.
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 1.374
Times cited: 3
DOI: 10.1116/1.4906819
|
|
|
“Modeling of the target surface modification by reactive ion implantation during magnetron sputtering”. Depla D, Chen ZY, Bogaerts A, Ignatova V, de Gryse R, Gijbels R, Journal of vacuum science and technology: A: vacuum surfaces and films 22, 1524 (2004). http://doi.org/10.1116/1.1705641
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 1.374
Times cited: 13
DOI: 10.1116/1.1705641
|
|
|
“Reaction mechanisms for atomic layer deposition of aluminum oxide on semiconductor substrates”. Delabie A, Sioncke S, Rip J, Van Elshocht S, Pourtois G, Mueller M, Beckhoff B, Pierloot K, Journal of vacuum science and technology: A: vacuum surfaces and films 30, 01a127 (2012). http://doi.org/10.1116/1.3664090
Abstract: In this work, we have studied the TMA/H(2)O (TMA Al(CH(3))(3)) atomic layer deposition (ALD) of Al(2)O(3) on hydroxyl (OH) and thiol (SH) terminated semiconductor substrates. Total reflection x-ray fluorescence reveals a complex growth-per-cycle evolution during the early ALD reaction cycles. OH and SH terminated surfaces demonstrate growth inhibition from the second reaction cycle on. Theoretical calculations, based on density functional theory, are performed on cluster models to investigate the first TMA/H(2)O reaction cycle. Based on the theoretical results, we discuss possible mechanisms for the growth inhibition from the second reaction cycle on. In addition, our calculations show that AlCH(3) groups are hydrolyzed by a H(2)O molecule adsorbed on a neighboring Al atom, independent of the type of backbonds (Si-O, Ge-O, or Ge-S) of AlCH(3). The coordination of Al remains four-fold after the first TMA/H(2)O reaction cycle. (C) 2012 American Vacuum Society. [DOI: 10.1116/1.3664090]
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 1.374
Times cited: 41
DOI: 10.1116/1.3664090
|
|
|
“Thermal recrystallization of short-range ordered WS2 films”. Heyne MH, de Marneffe J-F, Radu I, Neyts EC, De Gendt S, Journal of vacuum science and technology: A: vacuum surfaces and films 36, 05g501 (2018). http://doi.org/10.1116/1.5036654
Abstract: The integration of van der Waals materials in nanoelectronic devices requires the deposition of few-layered MX2 films with excellent quality crystals covering a large area. In recent years, astonishing progress in the monolayer growth of WS2 and MoS2 was demonstrated, but multilayer growth resulted often in separated triangular or hexagonal islands. These polycrystalline films cannot fully employ the specific MX2 properties since they are not connected in-plane to the other domains. To coalesce separated islands, ultrahigh-temperature postdeposition anneals in H2S are applied, which are not compatible with bare silicon substrates. Starting from the deposition of stoichiometric short-ordered films, the present work studies different options for subsequent high-temperature annealing in an inert atmosphere to form crystalline films with large grains from stoichiometric films with small grains. The rapid thermal annealing, performed over a few seconds, is compared to excimer laser annealing in the nanosecond range, which are both able to crystallize the thin WS2. The WS2 recrystallization temperature can be lowered using metallic crystallization promoters (Co and Ni). The best result is obtained using a Co cap, due to the circumvention of Co and S binary phase formation below the eutectic temperature. The recrystallization above a critical temperature is accompanied by sulfur loss and 3D regrowth. These undesired effects can be suppressed by the application of a dielectric capping layer prior to annealing. A SiO2 cap can suppress the sulfur loss successfully during annealing and reveals improved material quality in comparison to noncapped films Published by the AVS.
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 1.374
Times cited: 2
DOI: 10.1116/1.5036654
|
|
|
“Corrosion protection of Cu by atomic layer deposition”. Cremers V, Rampelberg G, Baert K, Abrahami S, Claes N, de Oliveira TM, Terryn H, Bals S, Dendooven J, Detavernier C, Journal of vacuum science and technology: A: vacuum surfaces and films 37, 060902 (2019). http://doi.org/10.1116/1.5116136
Abstract: Atomic layer deposition (ALD) is a vapor phase technique that is able to deposit uniform, conformal thin films with an excellent thickness control at the atomic scale. 18 nm thick Al2O3 and TiO2 coatings were deposited conformaly and pinhole-free onto micrometer-sized Cu powder, using trimethylaluminum and tetrakis(dimethylamido)titanium(IV), respectively, as a precursor and de-ionized water as a reactant. The capability of the ALD coating to protect the Cu powder against corrosion was investigated. Therefore, the stability of the coatings was studied in solutions with different pH in the range of 0–14, and in situ raman spectroscopy was used to detect the emergence of corrosion products of Cu as an indication that the protective coating starts to fail. Both ALD coatings provide good protection at standard pH values in the range of 5–7. In general, the TiO2 coating shows a better barrier protection against corrosion than the Al2O3 coating. However, for the most extreme pH conditions, pH 0 and pH 14, the TiO2 coating starts also to degrade.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.374
Times cited: 7
DOI: 10.1116/1.5116136
|
|
|
“Controllable nitrogen doping in as deposited TiO2 film and its effect on post deposition annealing”. Deng S, Verbruggen SW, Lenaerts S, Martens JA, Van den Berghe S, Devloo-Casier K, Devulder W, Dendoover J, Deduytsche D, Detavernier C, Journal of vacuum science and technology: A: vacuum surfaces and films 32, 01a123 (2014). http://doi.org/10.1116/1.4847976
Abstract: In order to narrow the band gap of TiO2, nitrogen doping by combining thermal atomic layer deposition (TALD) of TiO2 and plasma enhanced atomic layer deposition (PEALD) of TiN has been implemented. By altering the ratio between TALD TiO2 and PEALD TiN, the as synthesized TiOxNy films showed different band gaps (from 1.91 eV to 3.14 eV). In situ x-ray diffraction characterization showed that the crystallization behavior of these films changed after nitrogen doping. After annealing in helium, nitrogen doped TiO2 films crystallized into rutile phase while for the samples annealed in air a preferential growth of the anatase TiO2 along (001) orientation was observed. Photocatalytic tests of the degradation of stearic acid were done to evaluate the effect of N doping on the photocatalytic activity.
Keywords: A1 Journal article; Engineering sciences. Technology; Sustainable Energy, Air and Water Technology (DuEL)
Impact Factor: 1.374
Times cited: 10
DOI: 10.1116/1.4847976
|
|
|
“Hybrid modeling of a capacitively coupled radio frequency glow discharge in argon: combined Monte Carlo and fluid model”. Bogaerts A, Gijbels R, Goedheer W, Japanese journal of applied physics 38, 4404 (1999). http://doi.org/10.1143/JJAP.38.4404
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 1.384
Times cited: 45
DOI: 10.1143/JJAP.38.4404
|
|
|
“Wafer-level electrical evaluation of vertical carbon nanotube bundles as a function of growth temperature”. Vereecke B, van der Veen MH, Sugiura M, Kashiwagi Y, Ke X, Cott DJ, Hantschel T, Huyghebaert C, Tökei Z, Japanese journal of applied physics 52, 04cn02 (2013). http://doi.org/10.7567/JJAP.52.04CN02
Abstract: We have evaluated the resistance of carbon nanotubes (CNTs) grown at a CMOS-compatible temperature using a realistic integration scheme. The structural analysis of the CNTs by transmission electron microscopy (TEM) showed that the degree of graphitization decreased significantly when the growth temperature was decreased from 540 to 400 °C. The CNTs were integrated to form 150-nm-diameter vertical interconnects between a TiN layer and Cu metal trenches on 200 mm full wafers. Wafers with CNTs grown at low temperature were found to have a lower single-contact resistance than those produced at high temperatures. Thickness measurements showed that the low contact resistance is a result of small contact height. This height dependence is masking the impact of CNT graphitization quality on resistance. When benchmarking our results with data from the literature, a relationship between resistivity and growth temperature cannot be found for CNT-based vertical interconnects.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.384
Times cited: 5
DOI: 10.7567/JJAP.52.04CN02
|
|
|
“Progress and prospects in nanoscale dry processes: How can we control atomic layer reactions?”.Ishikawa K, Karahashi K, Ichiki T, Chang JP, George SM, Kessels WMM, Lee HJ, Tinck S, Um JH, Kinoshita K, Japanese journal of applied physics 56, 06HA02 (2017). http://doi.org/10.7567/JJAP.56.06HA02
Abstract: In this review, we discuss the progress of emerging dry processes for nanoscale fabrication. Experts in the fields of plasma processing have contributed to addressing the increasingly challenging demands in achieving atomic-level control of material selectivity and physicochemical reactions involving ion bombardment. The discussion encompasses major challenges shared across the plasma science and technology community. Focus is placed on advances in the development of fabrication technologies for emerging materials, especially metallic and intermetallic compounds and multiferroic, and two-dimensional (2D) materials, as well as state-of-the-art techniques used in nanoscale semiconductor manufacturing with a brief summary of future challenges.
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 1.384
Times cited: 18
DOI: 10.7567/JJAP.56.06HA02
|
|
|
“A novel approach to analyse FTIR spectra of precipitates in boron-doped silicon”. de Gryse O, Vanhellemont J, Clauws P, Lebedev O, van Landuyt J, Simoen E, Claeys C, Physica: B : condensed matter
T2 –, 22nd International Conference on Defects in Semiconductors (ICDS-22), JUL 28-AUG 01, 2003, UNIV AARHUS, AARHUS, DENMARK 340, 1013 (2003). http://doi.org/10.1016/j.physb.2003.09.194
Abstract: Infrared absorption spectra of composite precipitates are analysed with a modified Day-Thorpe algorithm, assuming a precipitated phase consisting of a mixture of two components with known optical properties. Additional constraints are introduced when solving the model equations by using a priori knowledge making the algorithm more reliable. It is shown that this novel approach allows determining both morphology and composition of precipitates. The method is applied to characterise oxide precipitates in boron-doped silicon. The results indicate that for the resistivity range above 60 mOmegacm, the precipitated phase is most probably SiO1.17+/-0.14, while for resistivities below 20 mOmega cm, precipitates consist of a SiO2/B2O3 composite with a large volume fraction of B(2)0(3) (up to 40% for 8 mOmegacm material). (C) 2003 Elsevier B.V. All rights reserved.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.386
Times cited: 4
DOI: 10.1016/j.physb.2003.09.194
|
|
|
“A-site ordering and stripe phases in manganite films”. Sudheendra L, Moshnyaga V, Lebedev OI, Gehrke K, Belenciuc A, Shapoval O, Van Tendeloo G, Samwer K, Physica: B : condensed matter
T2 –, International Conference on Strongly Correlated Electron Systems (SCES, 2007), MAY 13-18, 2007, Houston, TX 403, 1645 (2008). http://doi.org/10.1016/j.physb.2007.10.332
Abstract: Insulating and metallic stripes above and below the Curie temperature, T-C, respectively, were observed by a high-resolution scanning tunneling microscopy (STM) and/or spectroscopy (STS) in A-site ordered and macroscopically strain free epitaxial La0.75Ca0.25MnO3 film grown on MgO substrate. The “insulating” stripes were found to be incommensurable to the lattice and aligned along (110) direction. Metallic stripes were commensurable with periodicity 2a(p)similar to 0.8 nm and aligned parallel to the crystallographic a/b-axis. Formation of these stripes involves competing charge, orbital, and lattice orders and is an outcome of an overlapping of electron wave functions mediated by the local lattice-strain distribution, existed even in A-site ordered film due to the difference in cation radii of La and Ca. (C) 2007 Elsevier B.V. All rights reserved.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.386
DOI: 10.1016/j.physb.2007.10.332
|
|
|
“An envelope function formalism for lattice-matched heterostructures”. Van de Put ML, Vandenberghe WG, Magnus W, Sorée B, Physica: B : condensed matter 470-471, 69 (2015). http://doi.org/10.1016/j.physb.2015.04.031
Abstract: The envelope function method traditionally employs a single basis set which, in practice, relates to a single material because the k.p matrix elements are generally only known in a particular basis. In this work, we defined a basis function transformation to alleviate this restriction. The transformation is completely described by the known inter-band momentum matrix elements. The resulting envelope function equation can solve the electronic structure in lattice matched heterostructures without resorting to boundary conditions at the interface between materials, while all unit-cell averaged observables can be calculated as with the standard envelope function formalism. In the case of two coupled bands, this heterostructure formalism is equivalent to the standard formalism while taking position dependent matrix elements. (C) 2015 Elsevier B.V. All rights reserved
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 1.386
Times cited: 5
DOI: 10.1016/j.physb.2015.04.031
|
|
|
“Chemical and structural characterization of oxygen precipitates in silicon by infrared spectroscopy and TEM”. de Gryse O, Clauws P, Lebedev O, van Landuyt J, Vanhellemont J, Claeys C, Simoen E, Physica: B : condensed matter
T2 –, 21st International Conference on Defects in Semiconductors, JUL 16-20, 2001, GIESSEN, GERMANY 308, 294 (2001). http://doi.org/10.1016/S0921-4526(01)00801-8
Abstract: Infrared absorption spectra of polyhedral and platelet oxygen precipitates are analyzed using a modified Day-Thorpe approach (J. Phys.: Condens. Matter 11 (1999) 2551). The aspect ratio has been determined by TEM measurements. The reduced spectral function and the stoichiometry are extracted from the absorption spectra and the concentration of precipitated interstitial oxygen. One set of spectra reveal a Frohlich frequency around 1100 cm(-1) and another around 1110-1120 cm(-1). It is shown that the shift in the Frohlich frequency is not due to a different stoichiometry, but due to the detailed structure in the reduced spectral function. The oxygen precipitates consist of SiO. with gammaapproximate to1.1-1.2+/-0.1. (C) 2001 Elsevier Science B.V. All rights reserved.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.386
Times cited: 3
DOI: 10.1016/S0921-4526(01)00801-8
|
|
|
“High-field cyclotron resonance and electron-phonon interaction in modulation-doped multiple quantum well structures”. Wang YJ, Jiang ZX, McCombe BD, Peeters FM, Wu XG, Hai GQ, Eusfis TJ, Schaff W, Physica: B : condensed matter 256/258, 215 (1998). http://doi.org/10.1016/S0921-4526(98)00572-9
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 1.386
Times cited: 5
DOI: 10.1016/S0921-4526(98)00572-9
|
|
|
“Joule heat in a two-dimensional electron gas exposed to a normal non-homogeneous magnetic field of a 'chess' configuration”. Badalyan SM, Peeters FM, Physica: B : condensed matter 316, 216 (2002). http://doi.org/10.1016/S0921-4526(02)00462-3
Abstract: We have calculated analytically the spatial distribution of the electric field and current density, and obtained the Joule heat generation rate in a two-dimensional electron gas (2DEG) subjected to a non-homogeneous magnetic field of a 'chess' configuration. The generation of the Joule heat from the 2DEG is mainly concentrated near the singular corners of each 'chess' field and tends to zero in other corners. (C) 2002 Elsevier Science B.V. All rights reserved.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 1.386
DOI: 10.1016/S0921-4526(02)00462-3
|
|
|
“Magnetic field dependence of the xciton energy in type I and type II quantum disks”. Janssens KL, Peeters FM, Schweigert VA, Partoens B, Physica: B : condensed matter 298, 277 (2001). http://doi.org/10.1016/S0921-4526(01)00316-7
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 1.386
Times cited: 4
DOI: 10.1016/S0921-4526(01)00316-7
|
|
|
“Mesoscopic superconductors as 'artificial atoms' made from Cooper pairs”. Geim AK, Grigorieva IV, Dubonos SV, Lok JGS, Maan JC, Filippov AE, Peeters FM, Deo PS, Physica: B : condensed matter 249/251, 445 (1998)
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 1.386
Times cited: 4
|
|
|
“Minigaps and the quantum Hall effect in broken gap InAs/GaSb heterostructures”. Nicholas RJ, Lakrimi M, Khym SW, Mason NJ, Poulter AJL, Vaughan T, Walker PJ, Maude DK, Portal JC, Symons DM, Peeters FM, Physica: B : condensed matter 256/258, 207 (1998). http://doi.org/10.1016/S0921-4526(98)00579-1
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 1.386
Times cited: 3
DOI: 10.1016/S0921-4526(98)00579-1
|
|