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“Experimental validation of edge strength model for glass with polished and cut edge finishing”. Vandebroek M, Belis J, Louter C, Van Tendeloo G, Engineering fracture mechanics 96, 480 (2012). http://doi.org/10.1016/j.engfracmech.2012.08.019
Abstract: In literature, the experimental validation of a glass edge strength model is lacking. Therefore, in this study, an edge strength model was established and validated. The short-term parameters of the edge strength model, i.e. the flaw geometry and depth, were determined by means of testing at a high stress rate. This was done for polished and cut edges. Next, the strength model, including subcritical crack growth, was established. Finally, the edge strength model was validated by the test results at a low stress rate. The assessed model was found to be slightly conservative, compared to the test results.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 2.151
Times cited: 15
DOI: 10.1016/j.engfracmech.2012.08.019
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“Description of the thermalization process of the sputtered atoms in a glow discharge using a 3-dimensional Monte Carlo method”. Bogaerts A, van Straaten M, Gijbels R, Journal of applied physics 77, 1868 (1995). http://doi.org/10.1063/1.358887
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 2.183
Times cited: 87
DOI: 10.1063/1.358887
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“Intersubband-coupling and screening effects on the electron transport in a quasi-two-dimensional δ-doped semiconductor system”. Hai G-Q, Studart N, Peeters FM, Koenraad PM, Wolter JH, Journal of applied physics 80, 5809 (1996). http://doi.org/10.1063/1.363573
Abstract: The effects due to intersubband coupling and screening on the ionized impurity scattering are studied for a quasi-two-dimensional electron system in delta-doped semiconductors. We found that intersubband coupling plays an essential role in describing the screening properties and the effect of ionized impurity scattering on the mobility in a multisubband system. At the onset of the occupation of a higher subband, the screening due to the intersubband coupling leads to a reduction of the small angle scattering rate in the lower subband. We showed that such an effect is significant in a delta-doped quantum well and results in a pronounced increase of the quantum mobility at the onset of the occupation of a higher subband. (C) 1996 American Institute of Physics.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 2.183
Times cited: 40
DOI: 10.1063/1.363573
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“Microstructural and physical properties of layered manganite oxides related to the magnetoresistive perovskites”. Laffez P, Van Tendeloo G, Seshadri R, Hervieu M, Martin C, Maignan A, Raveau B, Journal of applied physics 80, 5850 (1996). http://doi.org/10.1063/1.363578
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.183
Times cited: 36
DOI: 10.1063/1.363578
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“Structural defects and epitaxial rotation of C60 and C70 (111) films on GeS(001)”. Bernaerts D, Van Tendeloo G, Amelinckx S, Hevesi K, Gensterblum G, Yu LM, Pireaux JJ, Grey F, Bohr J, Journal of applied physics 80, 3310 (1996). http://doi.org/10.1063/1.363241
Abstract: A transmission electron microscopy study of epitaxial C-60 and C-70 films grown on a GeS (001) surface is presented. The relationship between the orientation of the substrate and the films and structural defects in the films, such as grain boundaries, unknown in bulk C-60 and C-70 crystals, are studied. Small misalignments of the overlayers with respect to the orientation of the substrate, so-called epitaxial rotations, exist mainly in C-70 films, but also sporadically in the C-60 overlayers. A simple symmetry model, previously used to predict the rotation of hexagonal overlayers on hexagonal substrates, is numerically tested and applied to the present situation. Some qualitative conclusions concerning the substrate-film interaction are deduced. (C) 1996 American Institute of Physics.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.183
Times cited: 6
DOI: 10.1063/1.363241
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“Theoretical investigation of CoSi2/Si1-xGex detectors: influence of a Si tunneling barrier on the electro-optical characteristics”. Chu DP, Peeters FM, Kolodinski S, Roca E, Journal of applied physics 79, 1151 (1996)
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 2.183
Times cited: 3
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“Bloch and localized electrons in semiconductor superlattices”. Helm M, Hilber W, Fromherz T, Peeters FM, Alavi K, Pathak RN, Semiconductor science and technology 9, 1989 (1994). http://doi.org/10.1088/0268-1242/9/11S/022
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 2.19
Times cited: 1
DOI: 10.1088/0268-1242/9/11S/022
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“Hot magneto-phonon and electro-phonon resonances in heterostructures”. Peeters FM, Devreese JT, Semiconductor science and technology: B 7, 15 (1992). http://doi.org/10.1088/0268-1242/7/3B/004
Keywords: A1 Journal article; Condensed Matter Theory (CMT); Theory of quantum systems and complex systems
Impact Factor: 2.19
Times cited: 12
DOI: 10.1088/0268-1242/7/3B/004
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“Novel nonlinear transport phenomena in a triangular quantum well”. Kastalsky A, Peeters FM, Chan WK, Florez LT, Harbison JP, Semiconductor science and technology: B 7, 530 (1992). http://doi.org/10.1088/0268-1242/7/3B/138
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 2.19
Times cited: 4
DOI: 10.1088/0268-1242/7/3B/138
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“Warm-electron transport in a two-dimensional semiconductor”. Xu W, Peeters FM, Devreese JT, Semiconductor science and technology 7, 1251 (1992)
Keywords: A1 Journal article; Condensed Matter Theory (CMT); Theory of quantum systems and complex systems
Impact Factor: 2.19
Times cited: 3
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“Evaluation of different rectangular scan strategies for STEM imaging”. Velazco A, Nord M, Béché, A, Verbeeck J, Ultramicroscopy , 113021 (2020). http://doi.org/10.1016/j.ultramic.2020.113021
Abstract: STEM imaging is typically performed by raster scanning a focused electron probe over a sample. Here we investigate and compare three different scan patterns, making use of a programmable scan engine that allows to arbitrarily set the sequence of probe positions that are consecutively visited on the sample. We compare the typical raster scan with a so-called ‘snake’ pattern where the scan direction is reversed after each row and a novel Hilbert scan pattern that changes scan direction rapidly and provides an homogeneous treatment of both scan directions. We experimentally evaluate the imaging performance on a single crystal test sample by varying dwell time and evaluating behaviour with respect to sample drift. We demonstrate the ability of the Hilbert scan pattern to more faithfully represent the high frequency content of the image in the presence of sample drift. It is also shown that Hilbert scanning provides reduced bias when measuring lattice parameters from the obtained scanned images while maintaining similar precision in both scan directions which is especially important when e.g. performing strain analysis. Compared to raster scanning with flyback correction, both snake and Hilbert scanning benefit from dose reduction as only small probe movement steps occur.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.2
Times cited: 13
DOI: 10.1016/j.ultramic.2020.113021
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“Source/drain materials for Ge nMOS devices: phosphorus activation in epitaxial Si, Ge, Ge1-xSnx and SiyGe1-x-ySnx”. Vohra A, Makkonen I, Pourtois G, Slotte J, Porret C, Rosseel E, Khanam A, Tirrito M, Douhard B, Loo R, Vandervorst W, Ecs Journal Of Solid State Science And Technology 9, 044010 (2020). http://doi.org/10.1149/2162-8777/AB8D91
Abstract: This paper benchmarks various epitaxial growth schemes based on n-type group-IV materials as viable source/drain candidates for Ge nMOS devices. Si:P grown at low temperature on Ge, gives an active carrier concentration as high as 3.5 x 10(20) cm(-3) and a contact resistivity down to 7.5 x 10(-9) Omega.cm(2). However, Si:P growth is highly defective due to large lattice mismatch between Si and Ge. Within the material stacks assessed, one option for Ge nMOS source/drain stressors would be to stack Si:P, deposited at contact level, on top of a selectively grown n-SiyGe1-x-ySnx at source/drain level, in line with the concept of Si passivation of n-Ge surfaces to achieve low contact resistivities as reported in literature (Martens et al. 2011 Appl. Phys. Lett., 98, 013 504). The saturation in active carrier concentration with increasing P (or As)-doping is the major bottleneck in achieving low contact resistivities for as-grown Ge or SiyGe1-x-ySnx. We focus on understanding various dopant deactivation mechanisms in P-doped Ge and Ge1-xSnx alloys. First principles simulation results suggest that P deactivation in Ge and Ge1-xSnx can be explained both by P-clustering and donor-vacancy complexes. Positron annihilation spectroscopy analysis, suggests that dopant deactivation in P-doped Ge and Ge1-xSnx is primarily due to the formation of P-n-V and SnmPn-V clusters. (C) 2020 The Author(s). Published on behalf of The Electrochemical Society by IOP Publishing Limited.
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 2.2
DOI: 10.1149/2162-8777/AB8D91
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“Classical molecules in two dimensions”. Peeters FM, Partoens B, Schweigert VA, Goldoni G, Physica: E 1, 219 (1997). http://doi.org/10.1016/S1386-9477(97)00069-6
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 2.221
Times cited: 5
DOI: 10.1016/S1386-9477(97)00069-6
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“Confined states in two-dimensional flat elliptic quantum dots and elliptic quantum wires”. van den Broek M, Peeters FM, Physica. E: Low-dimensional systems and nanostructures 11, 345 (2001). http://doi.org/10.1016/S1386-9477(01)00169-2
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 2.221
Times cited: 54
DOI: 10.1016/S1386-9477(01)00169-2
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“Driven quasi-on-dimensional classical electron gas in the presence of a constriction: pinning and depinning”. Piacente G, Peeters FM, Physica. E: Low-dimensional systems and nanostructures 34, 224 (2006). http://doi.org/10.1016/j.physe.2006.03.040
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 2.221
DOI: 10.1016/j.physe.2006.03.040
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“The effect of the dielectric mismatch on excitons and trions in freestanding nanowires”. Slachmuylders AF, Partoens B, Magnus W, Peeters FM, Physica. E: Low-dimensional systems and nanostructures 40, 2166 (2008). http://doi.org/10.1016/j.physe.2007.10.091
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 2.221
Times cited: 3
DOI: 10.1016/j.physe.2007.10.091
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“Effects of intersubband interaction on multisubband electron transport in single and double quantum wells”. Hai GQ, Studart N, Marques GE, Peeters FM, Koenraad PM, Physica. E: Low-dimensional systems and nanostructures 2, 222 (1998). http://doi.org/10.1016/S1386-9477(98)00048-4
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 2.221
Times cited: 3
DOI: 10.1016/S1386-9477(98)00048-4
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“Electrical transport through magnetic barriers”. Ibrahim IS, Schweigert VA, Peeters FM, Physica. E: Low-dimensional systems and nanostructures 2, 899 (1998). http://doi.org/10.1016/S1386-9477(98)00183-0
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 2.221
DOI: 10.1016/S1386-9477(98)00183-0
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“Electroluminescence spectra of an STM-tip-induced quantum dot”. Croitoru MD, Gladilin VN, Fomin VM, Devreese JT, Kemerink M, Koenraad PM, Sauthoff K, Wolter JH, Physica. E: Low-dimensional systems and nanostructures 21, 270 (2004). http://doi.org/10.1016/j.physe.2003.11.028
Keywords: A1 Journal article; Theory of quantum systems and complex systems; Condensed Matter Theory (CMT); Electron microscopy for materials research (EMAT)
Impact Factor: 2.221
Times cited: 1
DOI: 10.1016/j.physe.2003.11.028
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“Electron and hole localization in coupled InP/InGaP self-assembled quantum dots”. Tadić, M, Peeters FM, Partoens B, Janssens KL, Physica. E: Low-dimensional systems and nanostructures 13, 237 (2002). http://doi.org/10.1016/S1386-9477(01)00528-8
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 2.221
Times cited: 5
DOI: 10.1016/S1386-9477(01)00528-8
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“Electronic structure of the valence band in cylindrical strained InP/InGaP quantum dots in an external magnetic field”. Tadic, Peeters FM, Physica. E: Low-dimensional systems and nanostructures
T2 –, 14th International Conference on the Electronic Properties of, Two-Dimensional Systems, July 30-August 03, 2001, Prague, Czech Republic 12, 880 (2002). http://doi.org/10.1016/S1386-9477(01)00445-3
Abstract: The multiband effective-mass model of cylindrical self-assembled quantum dots in a magnetic field normal to the layer of the quantum dots is presented. The strain distribution is computed by the valence force field method. The strain-dependent multiband Hamiltonian is modified into an axially symmetric form, which commutes with the total angular momentum F-2 = fh. where f denotes the total magnetic quantum number. The heavy hole and the light hole parts in the mixed hole state are resolved. It is found that the heavy hole component dominates in the ground states for both f = 1/2 and 3/2. The electronic structure exhibits numerous anticrossings between the hole levels. The Zeeman splitting between the +\f\ and -\f\ states is also computed. (C) 2002 Elsevier Science B.V. All rights reserved.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 2.221
Times cited: 1
DOI: 10.1016/S1386-9477(01)00445-3
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“Exact broken-symmetry states and Hartree-Fock solutions for quantum dots at high magnetic fields”. Szafran B, Peeters FM, Bednarek S, Adamowski J, Physica. E: Low-dimensional systems and nanostructures
T2 –, 3rd International Conference on Quantum Dots (QD 2004), MAY 10-13, 2004, Max Bell Bldg Banff Ctr, Banff, Canada 26, 252 (2005). http://doi.org/10.1016/j.physe.2004.08.059
Abstract: Wigner molecules formed at high magnetic fields in circular and elliptic quantum dots are studied by exact diagonalization (ED) and unrestricted Hartree-Fock (UHF) methods with multicenter basis of displaced lowest Landau level wave functions. The broken symmetry states with semi-classical charge density constructed from superpositions of the ED solutions are compared to the UHF results. UHF overlooks the dependence of the few-electron wave functions on the actual relative positions of electrons localized in different charge puddles and partially compensates for this neglect by an exaggerated separation of charge islands which are more strongly localized than in the exact broken-symmetry states. (C) 2004 Elsevier B.V. All rights reserved.
Keywords: A1 Journal article; Engineering sciences. Technology; Condensed Matter Theory (CMT)
Impact Factor: 2.221
Times cited: 2
DOI: 10.1016/j.physe.2004.08.059
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“First-principles study of doped Si and Ge nanowires”. Peelaers H, Partoens B, Peeters FM, Physica. E: Low-dimensional systems and nanostructures 40, 2169 (2008). http://doi.org/10.1016/j.physe.2007.10.090
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 2.221
Times cited: 7
DOI: 10.1016/j.physe.2007.10.090
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“First-principles study of strained 2D MoS2”. Scalise E, Houssa M, Pourtois G, Afanas'ev VV, Stesmans A, Physica. E: Low-dimensional systems and nanostructures 56, 416 (2014). http://doi.org/10.1016/j.physe.2012.07.029
Abstract: The electronic and vibrational properties of 2D honeycomb structures of molybdenum disulfide (MoS2) subjected to strain have been investigated using first-principles calculations based on density functional theory. We have studied the evolution of the electronic properties of bulk and layered MoS2, going down from a few layers up to a mono-layer, and next investigated the effect of bi-axial strain on their electronic structure and vibrational frequencies. Both for tensile and compressive biaxial strains, the shrinking of the energy band-gap of MoS2 with increasing level of applied strain is observed and a transition limit of the system from semiconducting to metallic is predicted to occur for strains in the range of 8-10%. We also found a progressive downshift (upshift) of both the E-2g(1) and A(1g) Raman active modes with increasing level of applied tensile (compressive) strain. Interestingly, significant changes in the curvature of the conduction and valence band near their extrema upon the application of strain are also predicted, with correlated variations of the electron and hole effective masses. These changes present interesting possibilities for engineering the electronic properties of 2D structures of MoS2. (C) 2012 Elsevier B.V. All rights reserved.
Keywords: A1 Journal article; Engineering sciences. Technology; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 2.221
Times cited: 72
DOI: 10.1016/j.physe.2012.07.029
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“The Hall resistivity of a two-dimensional electron gas in the presence of magnetic clusters with perpendicular magnetization”. Reijniers J, Peeters FM, Matulis A, Physica. E: Low-dimensional systems and nanostructures 6, 759 (2000). http://doi.org/10.1016/S1386-9477(99)00197-6
Keywords: A1 Journal article; Condensed Matter Theory (CMT); Engineering Management (ENM)
Impact Factor: 2.221
Times cited: 9
DOI: 10.1016/S1386-9477(99)00197-6
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“Influence of strain on the magneto-exciton in single and coupled InP/GaInP quantum disks”. Janssens KL, Partoens B, Peeters FM, Physica. E: Low-dimensional systems and nanostructures 21, 349 (2004). http://doi.org/10.1016/j.physe.2003.11.269
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 2.221
DOI: 10.1016/j.physe.2003.11.269
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“Influence of strain on the Stark effect in InP/GaInP quantum discs”. Leoni P, Partoens B, Peeters FM, Physica. E: Low-dimensional systems and nanostructures 26, 312 (2005). http://doi.org/10.1016/j.physe.2004.08.069
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 2.221
Times cited: 1
DOI: 10.1016/j.physe.2004.08.069
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“Influence of the characteristics of the STM-tip on the electroluminescence spectra”. Croitoru MD, Gladilin VN, Fomin VM, Devreese JT, Kemerink M, Koenraad PM, Sauthoff K, Wolter JH, Physica. E: Low-dimensional systems and nanostructures 27, 13 (2005). http://doi.org/10.1016/j.physe.2004.10.002
Keywords: A1 Journal article; Theory of quantum systems and complex systems; Condensed Matter Theory (CMT); Electron microscopy for materials research (EMAT)
Impact Factor: 2.221
DOI: 10.1016/j.physe.2004.10.002
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“Interminiband spectroscopy of biased superlattices”. Helm M, Hilber W, Strasser G, de Meester R, Peeters FM, Wacker A, Physica. E: Low-dimensional systems and nanostructures 7, 274 (2000). http://doi.org/10.1016/S1386-9477(99)00275-1
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 2.221
Times cited: 1
DOI: 10.1016/S1386-9477(99)00275-1
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“Intersubband transitions in InAs/GaSb superlattices in a parallel magnetic field”. de Meester RHJ, Peeters FM, Lakrimi M, Nicholas RJ, Poulter AJL, Mason NJ, Walker PJ, Physica. E: Low-dimensional systems and nanostructures 7, 93 (2000)
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 2.221
Times cited: 1
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