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| Author | Saniz, R.; Sarmadian, N.; Partoens, B.; Batuk, M.; Hadermann, J.; Marikutsa, A.; Rumyantseva, M.; Gaskov, A.; Lamoen, D. | ||||
| Title | First-principles study of CO and OH adsorption on in-doped ZnO surfaces | Type | A1 Journal article | ||
| Year | 2019 | Publication | The journal of physics and chemistry of solids | Abbreviated Journal | J Phys Chem Solids |
| Volume | 132 | Issue | Pages | 172-181 | |
| Keywords | A1 Journal article; Electron microscopy for materials research (EMAT); Condensed Matter Theory (CMT) | ||||
| Abstract | We present a first-principles computational study of CO and OH adsorption on non-polar ZnO (10¯10) surfaces doped with indium. The calculations were performed using a model ZnO slab. The position of the In dopants was varied from deep bulk-like layers to the surface layers. It was established that the preferential location of the In atoms is at the surface by examining the dependence of the defect formation energy as well as the surface energy on In location. The adsorption sites on the surface of ZnO and the energy of adsorption of CO molecules and OH-species were determined in connection to In doping. It was found that OH has higher bonding energy to the surface than CO. The presence of In atoms at the surface of ZnO is favorable for CO adsorption, resulting in an elongation of the C-O bond and in charge transfer to the surface. The effect of CO and OH adsorption on the electronic and conduction properties of surfaces was assessed. We conclude that In-doped ZnO surfaces should present a higher electronic response upon adsorption of CO. |
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| Corporate Author | Thesis | ||||
| Publisher | Place of Publication | Editor | |||
| Language | Wos | 000472124700023 | Publication Date | 2019-04-25 | |
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 0022-3697 | ISBN | Additional Links | UA library record; WoS full record; WoS citing articles | |
Impact Factor  |
2.059 | Times cited | 7 | Open Access | Not_Open_Access: Available from 26.04.2021 |
| Notes | FWO-Vlaanderen, G0D6515N ; ERA.Net RUS Plus, 096 ; VSC; HPC infrastructure of the University of Antwerp; FWO-Vlaanderen; Flemish Government-department EWI; | Approved | Most recent IF: 2.059 | ||
| Call Number | EMAT @ emat @UA @ admin @ c:irua:159656 | Serial | 5170 | ||
| Permanent link to this record | |||||
| Author | Nematollahi, P.; Esrafili, M.D.; Neyts, E.C. | ||||
| Title | The role of healed N-vacancy defective BC2N sheet and nanotube by NO molecule in oxidation of NO and CO gas molecules | Type | A1 Journal article | ||
| Year | 2018 | Publication | Surface science : a journal devoted to the physics and chemistry of interfaces | Abbreviated Journal | Surf Sci |
| Volume | 672-673 | Issue | 672-673 | Pages | 39-46 |
| Keywords | A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT) | ||||
| Abstract | In this study, the healing of N-vacancy boron carbonitride nanosheet (NV-BC2NNS) and nanotube (NV-BC2NNT) by NO molecule is studied by means of density functional theory calculations. Two different N-vacancies are considered in each of these structures in which the vacancy site is surrounded by either three B-atoms (NB) or by two B- and one C-atom (NBC). By means of the healed BC2NNS and BC2NNT as a support, the removal of two toxic gas molecules (NO and CO) are applicable. It should be noted that the obtained energy barriers of both healing and oxidizing processes are significantly lower than those of graphene, carbon nanotubes or boron nitride nanostructures. Also, at the end of the oxidation process, the pure BC2NNS or BC2NNT is obtained without any additional defects. Therefore, by using this method, we can considerably purify the defective BC2NNS/BC2NNT. Moreover, according to the thermochemistry calculations we can further confirm that the healing process of the NV-BC2NNS and NV-BC2NNT by NO are feasible at room temperature. So, we can claim that this study could be very helpful in both purifying the defective BC2NNS/BC2NNT while in the same effort removing toxic NO and CO gases. | ||||
| Address | |||||
| Corporate Author | Thesis | ||||
| Publisher | Place of Publication | Amsterdam | Editor | ||
| Language | Wos | 000432614700007 | Publication Date | 2018-03-08 | |
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 0039-6028 | ISBN | Additional Links | UA library record; WoS full record; WoS citing articles | |
| Impact Factor |
2.062 | Times cited | 1 | Open Access | OpenAccess |
| Notes | Approved | Most recent IF: 2.062 | |||
| Call Number | UA @ lucian @ c:irua:151478 | Serial | 5044 | ||
| Permanent link to this record | |||||
| Author | Bafekry, A.; Shahrokhi, M.; Yagmurcukardes, M.; Gogova, D.; Ghergherehchi, M.; Akgenc, B.; Feghhi, S.A.H. | ||||
| Title | Surface functionalization of the honeycomb structure of zinc antimonide (ZnSb) monolayer : a first-principles study | Type | A1 Journal article | ||
| Year | 2021 | Publication | Surface Science | Abbreviated Journal | Surf Sci |
| Volume | 707 | Issue | Pages | 121796 | |
| Keywords | A1 Journal article; Condensed Matter Theory (CMT) | ||||
| Abstract | Structural, electronic, optic and vibrational properties of Zinc antimonide (ZnSb) monolayers and their func-tionalized (semi-fluorinated and fully chlorinated) structures are investigated by means of the first-principles calculations. The phonon dispersion curves reveal the presence of imaginary frequencies and thus confirm the dynamical instability of ZnSb monolayer. The calculated electronic band structure corroborates the metallic character with fully-relativistic calculations. Moreover, we analyze the surface functionalization effect on the structural, vibrational, and electronic properties of the pristine ZnSb monolayer. The semi-fluorinated and fully-chlorinated ZnSb monolayers are shown to be dynamically stable in contrast to the ZnSb monolayer. At the same time, semi-fluorination and fully-chlorination of ZnSb monolayer could effectively modulate the metallic elec-tronic properties of pristine ZnSb. In addition, a magnetic metal to a nonmagnetic semiconductor transition with a band gap of 1 eV is achieved via fluorination, whereas a transition to a semiconducting state with 1.4 eV band gap is found via chlorination of the ZnSb monolayer. According to the optical properties analysis, the first ab-sorption peaks of the fluorinated-and chlorinated-ZnSb monolayers along the in-plane polarization are placed in the infrared range of spectrum, while they are in the middle ultraviolet for the out-of-plane polarization. Interestingly, the optically anisotropic behavior of these novel monolayers along the in-plane polarizations is highly desirable for design of polarization-sensitive photodetectors. The results of the calculations clearly proved that the tunable electronic properties of the ZnSb monolayer can be realized by chemical functionalization for application in the next generation nanoelectronic devices. | ||||
| Address | |||||
| Corporate Author | Thesis | ||||
| Publisher | Place of Publication | Editor | |||
| Language | Wos | 000626633500001 | Publication Date | 2020-12-31 | |
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 0039-6028 | ISBN | Additional Links | UA library record; WoS full record; WoS citing articles | |
| Impact Factor |
2.062 | Times cited | Open Access | OpenAccess | |
| Notes | Approved | Most recent IF: 2.062 | |||
| Call Number | UA @ admin @ c:irua:177623 | Serial | 7026 | ||
| Permanent link to this record | |||||
| Author | Herrebout, D.; Bogaerts, A.; Yan, M.; Goedheer, W.; Dekempeneer, E.; Gijbels, R. | ||||
| Title | 1D fluid model for an rf methane plasma of interest in deposition of diamond-like carbon layers | Type | A1 Journal article | ||
| Year | 2001 | Publication | Journal of applied physics | Abbreviated Journal | J Appl Phys |
| Volume | 90 | Issue | Pages | 570-579 | |
| Keywords | A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT) | ||||
| Abstract | |||||
| Address | |||||
| Corporate Author | Thesis | ||||
| Publisher | American Institute of Physics | Place of Publication | New York, N.Y. | Editor | |
| Language | Wos | 000169660000007 | Publication Date | 2002-07-26 | |
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 0021-8979; | ISBN | Additional Links | UA library record; WoS full record; WoS citing articles | |
| Impact Factor |
2.068 | Times cited | 83 | Open Access | |
| Notes | Approved | Most recent IF: 2.068; 2001 IF: 2.128 | |||
| Call Number | UA @ lucian @ c:irua:37250 c:irua:37250 c:irua:37250 c:irua:37250 | Serial | 2 | ||
| Permanent link to this record | |||||
| Author | Li, D.Y.; Zeng, Y.J.; Pereira, L.M.C.; Batuk, D.; Hadermann, J.; Zhang, Y.Z.; Ye, Z.Z.; Temst, K.; Vantomme, A.; Van Bael, M.J.; Van Haesendonck, C.; | ||||
| Title | Anisotropic magnetism and spin-dependent transport in Co nanoparticle embedded ZnO thin films | Type | A1 Journal article | ||
| Year | 2013 | Publication | Journal of applied physics | Abbreviated Journal | J Appl Phys |
| Volume | 114 | Issue | 3 | Pages | 033909-6 |
| Keywords | A1 Journal article; Electron microscopy for materials research (EMAT) | ||||
| Abstract | Oriented Co nanoparticles were obtained by Co ion implantation in crystalline ZnO thin films grown by pulsed laser deposition. Transmission electron microscopy revealed the presence of elliptically shaped Co precipitates with nanometer size, which are embedded in the ZnO thin films, resulting in anisotropic magnetic behavior. The low-temperature resistance of the Co-implanted ZnO thin films follows the Efros-Shklovskii type variable-range-hopping. Large negative magnetoresistance (MR) exceeding 10% is observed in a magnetic field of 1 T at 2.5K and the negative MR survives up to 250K (0.3%). The negative MR reveals hysteresis as well as anisotropy that correlate well with the magnetic properties, clearly demonstrating the presence of spin-dependent transport. (C) 2013 AIP Publishing LLC. | ||||
| Address | |||||
| Corporate Author | Thesis | ||||
| Publisher | American Institute of Physics | Place of Publication | New York, N.Y. | Editor | |
| Language | Wos | 000322202700071 | Publication Date | 2013-07-17 | |
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 0021-8979; | ISBN | Additional Links | UA library record; WoS full record; WoS citing articles | |
| Impact Factor |
2.068 | Times cited | 10 | Open Access | |
| Notes | Approved | Most recent IF: 2.068; 2013 IF: 2.185 | |||
| Call Number | UA @ lucian @ c:irua:110765 | Serial | 126 | ||
| Permanent link to this record | |||||
| Author | Castelano, L.K.; Hai, G.Q.; Partoens, B.; Peeters, F.M. | ||||
| Title | Artificial molecular quantum rings under magnetic field influence | Type | A1 Journal article | ||
| Year | 2009 | Publication | Journal of applied physics | Abbreviated Journal | J Appl Phys |
| Volume | 106 | Issue | 7 | Pages | 073702,1-073702,8 |
| Keywords | A1 Journal article; Condensed Matter Theory (CMT) | ||||
| Abstract | The ground states of a few electrons confined in two vertically coupled quantum rings in the presence of an external magnetic field are studied systematically within the current spin-density functional theory. Electron-electron interactions combined with inter-ring tunneling affect the electronic structure and the persistent current. For small values of the external magnetic field, we recover the zero magnetic field molecular quantum ring ground state configurations. Increasing the magnetic field many angular momentum, spin, and isospin transitions are predicted to occur in the ground state. We show that these transitions follow certain rules, which are governed by the parity of the number of electrons, the single-particle picture, Hunds rules, and many-body effects. | ||||
| Address | |||||
| Corporate Author | Thesis | ||||
| Publisher | American Institute of Physics | Place of Publication | New York, N.Y. | Editor | |
| Language | Wos | 000270915600047 | Publication Date | 2009-10-03 | |
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 0021-8979; | ISBN | Additional Links | UA library record; WoS full record; WoS citing articles | |
| Impact Factor |
2.068 | Times cited | 5 | Open Access | |
| Notes | Approved | Most recent IF: 2.068; 2009 IF: 2.072 | |||
| Call Number | UA @ lucian @ c:irua:86926 | Serial | 155 | ||
| Permanent link to this record | |||||
| Author | Chang, K.; Peeters, F.M. | ||||
| Title | Asymmetric stark shifts in InGaAs/GaAs near-surface quantum wells: the image charge effect | Type | A1 Journal article | ||
| Year | 2000 | Publication | Journal of applied physics | Abbreviated Journal | J Appl Phys |
| Volume | 88 | Issue | Pages | 5246-5251 | |
| Keywords | A1 Journal article; Condensed Matter Theory (CMT) | ||||
| Abstract | |||||
| Address | |||||
| Corporate Author | Thesis | ||||
| Publisher | American Institute of Physics | Place of Publication | New York, N.Y. | Editor | |
| Language | Wos | 000089813800048 | Publication Date | 2002-07-26 | |
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 0021-8979; | ISBN | Additional Links | UA library record; WoS full record; WoS citing articles | |
| Impact Factor |
2.068 | Times cited | 20 | Open Access | |
| Notes | Approved | Most recent IF: 2.068; 2000 IF: 2.180 | |||
| Call Number | UA @ lucian @ c:irua:34355 | Serial | 159 | ||
| Permanent link to this record | |||||
| Author | Pourghaderi, M.A.; Magnus, W.; Sorée, B.; Meuris, M.; de Meyer, K.; Heyns, M. | ||||
| Title | Ballistic current in metal-oxide-semiconductor field-effect transistors: the role of device topology | Type | A1 Journal article | ||
| Year | 2009 | Publication | Journal of applied physics | Abbreviated Journal | J Appl Phys |
| Volume | 106 | Issue | 5 | Pages | 053702,1-053702,8 |
| Keywords | A1 Journal article; Condensed Matter Theory (CMT) | ||||
| Abstract | In this study we investigate the effect of device topology on the ballistic current in n-channel metal-oxide-semiconductor field-effect transistors. Comparison of the nanoscale planar and double-gate devices reveals that, down to a certain thickness of the double gate film, the ballistic current flowing in the double gate device is twice as large compared to its planar counterpart. On the other hand, further thinning of the film beyond this threshold is found to change noticeably the confinement and transport characteristics, which are strongly depending on the film material and the surface orientation. For double gate Ge and Si devices there exists a critical film thickness below which the transverse gate field is no longer effectively screened by the inversion layer electron gas and mutual inversion of the two gates is turned on. In the case of GaAs and other similar IIIV compounds, a decrease in the film thickness may drastically change the occupation of the L-valleys and therefore amend the transport properties. The simulation results show that, in both cases, the ballistic current and the transconductance are considerably enhanced. | ||||
| Address | |||||
| Corporate Author | Thesis | ||||
| Publisher | American Institute of Physics | Place of Publication | New York, N.Y. | Editor | |
| Language | Wos | 000269850300052 | Publication Date | 2009-09-03 | |
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 0021-8979; | ISBN | Additional Links | UA library record; WoS full record; WoS citing articles | |
| Impact Factor |
2.068 | Times cited | 3 | Open Access | |
| Notes | Approved | Most recent IF: 2.068; 2009 IF: 2.072 | |||
| Call Number | UA @ lucian @ c:irua:79744 | Serial | 214 | ||
| Permanent link to this record | |||||
| Author | Milovanovic, S.P.; Masir, M.R.; Peeters, F.M. | ||||
| Title | Bilayer graphene Hall bar with a pn-junction | Type | A1 Journal article | ||
| Year | 2013 | Publication | Journal of applied physics | Abbreviated Journal | J Appl Phys |
| Volume | 114 | Issue | 11 | Pages | 113706 |
| Keywords | A1 Journal article; Condensed Matter Theory (CMT) | ||||
| Abstract | We investigate the magnetic field dependence of the Hall and the bend resistances for a ballistic Hall bar structure containing a pn-junction sculptured from a bilayer of graphene. The electric response is obtained using the billiard model, and we investigate the cases of bilayer graphene with and without a band gap. Two different conduction regimes are possible: (i) both sides of the junction have the same carrier type and (ii) one side of the junction is n-type while the other one is p-type. The first case shows Hall plateau-like features in the Hall resistance that fade away as the band gap opens. The second case exhibits a bend resistance that is asymmetric in magnetic field as a consequence of snake states along the pn-interface, where the maximum is shifted away from zero magnetic field. | ||||
| Address | |||||
| Corporate Author | Thesis | ||||
| Publisher | American Institute of Physics | Place of Publication | New York, N.Y. | Editor | |
| Language | Wos | 000324827200031 | Publication Date | 2013-09-17 | |
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 0021-8979; | ISBN | Additional Links | UA library record; WoS full record; WoS citing articles | |
| Impact Factor |
2.068 | Times cited | 3 | Open Access | |
| Notes | This work was supported by the Flemish Science Foundation (FWO-Vl), the European Science Foundation (ESF) under the EUROCORES Program EuroGRAPHENE within the project CONGRAN, and the Methusalem Foundation of the Flemish government. | Approved | Most recent IF: 2.068; 2013 IF: 2.185 | ||
| Call Number | UA @ lucian @ c:irua:111169 | Serial | 234 | ||
| Permanent link to this record | |||||
| Author | Titantah, J.T.; Lamoen, D.; Schowalter, M.; Rosenauer, A. | ||||
| Title | Bond length variation in Ga1-xInxAs crystals from the Tersoff potential | Type | A1 Journal article | ||
| Year | 2007 | Publication | Journal of applied physics | Abbreviated Journal | J Appl Phys |
| Volume | 101 | Issue | 12 | Pages | 123508,1-4 |
| Keywords | A1 Journal article; Electron microscopy for materials research (EMAT) | ||||
| Abstract | |||||
| Address | |||||
| Corporate Author | Thesis | ||||
| Publisher | American Institute of Physics | Place of Publication | New York, N.Y. | Editor | |
| Language | Wos | 000247625700034 | Publication Date | 2007-06-20 | |
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 0021-8979; | ISBN | Additional Links | UA library record; WoS full record; WoS citing articles | |
| Impact Factor |
2.068 | Times cited | 19 | Open Access | |
| Notes | Approved | Most recent IF: 2.068; 2007 IF: 2.171 | |||
| Call Number | UA @ lucian @ c:irua:67460 | Serial | 247 | ||
| Permanent link to this record | |||||
| Author | Schattschneider, P.; Ennen, I.; Stoger-Pollach, M.; Verbeeck, J. | ||||
| Title | Circular dichroism in the electron microscope: progress and applications (invited) | Type | A1 Journal article | ||
| Year | 2010 | Publication | Journal of applied physics | Abbreviated Journal | J Appl Phys |
| Volume | 107 | Issue | 9 | Pages | 09d311,1-09d311,6 |
| Keywords | A1 Journal article; Electron microscopy for materials research (EMAT) | ||||
| Abstract | According to theory, x-ray magnetic circular dichroism in a synchrotron is equivalent to energy loss magnetic chiral dichroism (EMCD) in a transmission electron microscope (TEM). After a synopsis of the development of EMCD, the theoretical background is reviewed and recent results are presented, focusing on the study of magnetic nanoparticles for ferrofluids and Heusler alloys for spintronic devices. Simulated maps of the dichroic strength as a function of atom position in the crystal allow evaluating the influence of specimen thickness and sample tilt on the experimental EMCD signal. Finally, the possibility of direct observation of chiral electronic transitions with atomic resolution in a TEM is discussed. | ||||
| Address | |||||
| Corporate Author | Thesis | ||||
| Publisher | American Institute of Physics | Place of Publication | New York, N.Y. | Editor | |
| Language | Wos | 000277834300276 | Publication Date | 2010-05-12 | |
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 0021-8979; | ISBN | Additional Links | UA library record; WoS full record; WoS citing articles | |
| Impact Factor |
2.068 | Times cited | 28 | Open Access | |
| Notes | Esteem | Approved | Most recent IF: 2.068; 2010 IF: 2.079 | ||
| Call Number | UA @ lucian @ c:irua:83653UA @ admin @ c:irua:83653 | Serial | 361 | ||
| Permanent link to this record | |||||
| Author | Saraiva, M.; Georgieva, V.; Mahieu, S.; van Aeken, K.; Bogaerts, A.; Depla, D. | ||||
| Title | Compositional effects on the growth of Mg(M)O films | Type | A1 Journal article | ||
| Year | 2010 | Publication | Journal of applied physics | Abbreviated Journal | J Appl Phys |
| Volume | 107 | Issue | 3 | Pages | 034902,1-034902,10 |
| Keywords | A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT) | ||||
| Abstract | The influence of the composition on the crystallographic properties of deposited Mg(M)O (with M=Al, Cr, Ti, Y, and Zr) films is studied. For a flexible control of the composition, dual reactive magnetron sputtering was used as deposition technique. Two different approaches to predict the composition are discussed. The first is an experimental way based on the simple relationship between the deposition rate and the target-substrate distance. The second is a route using a Monte Carlo based particle trajectory code. Both methods require a minimal experimental input and enable the user to quickly predict the composition of complex thin films. Good control and flexibility allow us to study the compositional effects on the growth of Mg(M)O films. Pure MgO thin films were grown with a (111) preferential out-of-plane orientation. When adding M to MgO, two trends were noticed. The first trend is a change in the MgO lattice parameters compared to pure MgO. The second tendency is a decrease in the crystallinity of the MgO phase. The experimentally determined crystallographic properties are shown to be in correspondence with the predicted properties from molecular dynamics simulations. | ||||
| Address | |||||
| Corporate Author | Thesis | ||||
| Publisher | American Institute of Physics | Place of Publication | New York, N.Y. | Editor | |
| Language | Wos | 000274517300116 | Publication Date | 2010-02-03 | |
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 0021-8979; | ISBN | Additional Links | UA library record; WoS full record; WoS citing articles | |
| Impact Factor |
2.068 | Times cited | Open Access | ||
| Notes | Approved | Most recent IF: 2.068; 2010 IF: 2.079 | |||
| Call Number | UA @ lucian @ c:irua:80346 | Serial | 447 | ||
| Permanent link to this record | |||||
| Author | Berdiyorov, G.; Harrabi, K.; Mehmood, U.; Peeters, F.M.; Tabet, N.; Zhang, J.; Hussein, I.A.; McLachlan, M.A. | ||||
| Title | Derivatization and diffusive motion of molecular fullerenes : ab initio and atomistic simulations | Type | A1 Journal article | ||
| Year | 2015 | Publication | Journal of applied physics | Abbreviated Journal | J Appl Phys |
| Volume | 118 | Issue | 118 | Pages | 025101 |
| Keywords | A1 Journal article; Condensed Matter Theory (CMT) | ||||
| Abstract | Using first principles density functional theory in combination with the nonequilibrium Green's function formalism, we study the effect of derivatization on the electronic and transport properties of C-60 fullerene. As a typical example, we consider [6,6]-phenyl-C-61-butyric acid methyl ester (PCBM), which forms one of the most efficient organic photovoltaic materials in combination with electron donating polymers. Extra peaks are observed in the density of states (DOS) due to the formation of new electronic states localized at/near the attached molecule. Despite such peculiar behavior in the DOS of an isolated molecule, derivatization does not have a pronounced effect on the electronic transport properties of the fullerene molecular junctions. Both C-60 and PCBM show the same response to finite voltage biasing with new features in the transmission spectrum due to voltage induced delocalization of some electronic states. We also study the diffusive motion of molecular fullerenes in ethanol solvent and inside poly(3-hexylthiophene) lamella using reactive molecular dynamics simulations. We found that the mobility of the fullerene reduces considerably due to derivatization; the diffusion coefficient of C-60 is an order of magnitude larger than the one for PCBM. (c) 2015 AIP Publishing LLC. | ||||
| Address | |||||
| Corporate Author | Thesis | ||||
| Publisher | American Institute of Physics | Place of Publication | New York, N.Y. | Editor | |
| Language | Wos | 000357961000036 | Publication Date | 2015-07-10 | |
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 0021-8979;1089-7550; | ISBN | Additional Links | UA library record; WoS full record; WoS citing articles | |
| Impact Factor |
2.068 | Times cited | 2 | Open Access | |
| Notes | ; K.H., U.M. and I.A.H. would like to thank the National Science, Technology and Innovation Program of KACST for funding this research under Project No. 12-ENE2379-04. They also acknowledge support from KFUPM and Research Institute. ; | Approved | Most recent IF: 2.068; 2015 IF: 2.183 | ||
| Call Number | c:irua:127098 | Serial | 652 | ||
| Permanent link to this record | |||||
| Author | Reijniers, J.; Peeters, F.M. | ||||
| Title | Diffusive transport in the hybrid Hall effect device | Type | A1 Journal article | ||
| Year | 2000 | Publication | Journal of applied physics | Abbreviated Journal | J Appl Phys |
| Volume | 87 | Issue | Pages | 8088-8092 | |
| Keywords | A1 Journal article; Condensed Matter Theory (CMT); Engineering Management (ENM) | ||||
| Abstract | |||||
| Address | |||||
| Corporate Author | Thesis | ||||
| Publisher | American Institute of Physics | Place of Publication | New York, N.Y. | Editor | |
| Language | Wos | 000087067400075 | Publication Date | 2002-07-26 | |
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 0021-8979; | ISBN | Additional Links | UA library record; WoS full record; WoS citing articles | |
| Impact Factor |
2.068 | Times cited | 12 | Open Access | |
| Notes | Approved | Most recent IF: 2.068; 2000 IF: 2.180 | |||
| Call Number | UA @ lucian @ c:irua:28516 | Serial | 703 | ||
| Permanent link to this record | |||||
| Author | Pokatilov, E.P.; Fomin, V.M.; Balaban, S.N.; Gladilin, V.N.; Klimin, S.N.; Devreese, J.T.; Magnus, W.; Schoenmaker, W.; Collaert, N.; van Rossum, M.; de Meyer, K. | ||||
| Title | Distribution of fields and charge carriers in cylindrical nanosize silicon-based metal-oxide-semiconductor structures | Type | A1 Journal article | ||
| Year | 1999 | Publication | Journal Of Applied Physics | Abbreviated Journal | J Appl Phys |
| Volume | 85 | Issue | Pages | 6625-6631 | |
| Keywords | A1 Journal article; Electron Microscopy for Materials Science (EMAT); | ||||
| Abstract | |||||
| Address | |||||
| Corporate Author | Thesis | ||||
| Publisher | American Institute of Physics | Place of Publication | New York, N.Y. | Editor | |
| Language | Wos | 000079871200053 | Publication Date | 2002-07-26 | |
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 0021-8979; | ISBN | Additional Links | UA library record; WoS full record; WoS citing articles | |
| Impact Factor |
2.068 | Times cited | 16 | Open Access | |
| Notes | Approved | Most recent IF: 2.068; 1999 IF: 2.275 | |||
| Call Number | UA @ lucian @ c:irua:24444 | Serial | 743 | ||
| Permanent link to this record | |||||
| Author | Seyed-Talebi, S.M.; Beheshtian, J.; Neek-Amal, M. | ||||
| Title | Doping effect on the adsorption of NH3 molecule onto graphene quantum dot : from the physisorption to the chemisorption | Type | A1 Journal article | ||
| Year | 2013 | Publication | Journal of applied physics | Abbreviated Journal | J Appl Phys |
| Volume | 114 | Issue | 12 | Pages | 124307-7 |
| Keywords | A1 Journal article; Condensed Matter Theory (CMT) | ||||
| Abstract | The adsorption of ammonia molecule onto a graphene hexagonal flake, aluminum (Al) and boron (B) doped graphene flakes (graphene quantum dots, GQDs) are investigated using density functional theory. We found that NH3 molecule is absorbed to the hollow site through the physisorption mechanism without altering the electronic properties of GQD. However, the adsorption energy of NH3 molecule onto the Al- and B-doped GQDs increases with respect GQD resulting chemisorption. The adsorption of NH3 onto the Al-doped and B-doped GQDs makes graphene locally buckled, i.e., B-doped and Al-doped GQDs are not planar. The adsorption mechanism onto a GQD is different than that of graphene. This study reveals important features of the edge passivation and doping effects of the adsorption mechanism of external molecules onto the graphene quantum dots. (C) 2013 AIP Publishing LLC. | ||||
| Address | |||||
| Corporate Author | Thesis | ||||
| Publisher | American Institute of Physics | Place of Publication | New York, N.Y. | Editor | |
| Language | Wos | 000325391100057 | Publication Date | 2013-09-26 | |
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 0021-8979; | ISBN | Additional Links | UA library record; WoS full record; WoS citing articles | |
| Impact Factor |
2.068 | Times cited | 10 | Open Access | |
| Notes | ; This work was supported by the EU-Marie Curie IIF Fellowship/299855 for M.-N.A. ; | Approved | Most recent IF: 2.068; 2013 IF: 2.185 | ||
| Call Number | UA @ lucian @ c:irua:112201 | Serial | 750 | ||
| Permanent link to this record | |||||
| Author | Comrie, C.M.; Ahmed, A.; Smeets, D.; Demeulemeester, J.; Turner, S.; Van Tendeloo, G.; Detavernier, C.; Vantomme, A. | ||||
| Title | Effect of high temperature deposition on CoSi2 phase formation | Type | A1 Journal article | ||
| Year | 2013 | Publication | Journal of applied physics | Abbreviated Journal | J Appl Phys |
| Volume | 113 | Issue | 23 | Pages | 234902-234908 |
| Keywords | A1 Journal article; Electron microscopy for materials research (EMAT) | ||||
| Abstract | This paper discusses the nucleation behaviour of the CoSi to CoSi2 transformation from cobalt silicide thin films grown by deposition at elevated substrate temperatures ranging from 375 °C to 600 °C. A combination of channelling, real-time Rutherford backscattering spectrometry, real-time x-ray diffraction, and transmission electron microscopy was used to investigate the effect of the deposition temperature on the subsequent formation temperature of CoSi2, its growth behaviour, and the epitaxial quality of the CoSi2 thus formed. The temperature at which deposition took place was observed to exert a significant and systematic influence on both the formation temperature of CoSi2 and its growth mechanism. CoSi films grown at the lowest temperatures were found to increase the CoSi2 nucleation temperature above that of CoSi2 grown by conventional solid phase reaction, whereas the higher deposition temperatures reduced the nucleation temperature significantly. In addition, a systematic change in growth mechanism of the subsequent CoSi2 growth occurs as a function of deposition temperature. First, the CoSi2 growth rate from films grown at the lower reactive deposition temperatures is substantially lower than that grown at higher reactive deposition temperatures, even though the onset of growth occurs at a higher temperature, Second, for deposition temperatures below 450 °C, the growth appears columnar, indicating nucleation controlled growth. Elevated deposition temperatures, on the other hand, render the CoSi2 formation process layer-by-layer which indicates enhanced nucleation of the CoSi2 and diffusion controlled growth. Our results further indicate that this observed trend is most likely related to stress and changes in microstructure introduced during reactive deposition of the CoSi film. The deposition temperature therefore provides a handle to tune the CoSi2 growth mechanism. | ||||
| Address | |||||
| Corporate Author | Thesis | ||||
| Publisher | American Institute of Physics | Place of Publication | New York, N.Y. | Editor | |
| Language | Wos | 000321011700077 | Publication Date | 2013-06-17 | |
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 0021-8979; | ISBN | Additional Links | UA library record; WoS full record; WoS citing articles | |
| Impact Factor |
2.068 | Times cited | 2 | Open Access | |
| Notes | Fwo; Countatoms | Approved | Most recent IF: 2.068; 2013 IF: 2.185 | ||
| Call Number | UA @ lucian @ c:irua:109266 | Serial | 815 | ||
| Permanent link to this record | |||||
| Author | Malakho, A.; Fargin, E.; Lahaye, M.; Lazoryak, B.; Morozov, V.; Van Tendeloo, G.; Rodriguez, V.; Adamietz, F. | ||||
| Title | Enhancement of second harmonic generation signal in thermally poled glass ceramic with NaNbO3 nanocrystals | Type | A1 Journal article | ||
| Year | 2006 | Publication | Journal of applied physics | Abbreviated Journal | J Appl Phys |
| Volume | 100 | Issue | 6 | Pages | 063103,1-5 |
| Keywords | A1 Journal article; Electron microscopy for materials research (EMAT) | ||||
| Abstract | Glass ceramic composites were prepared by bulk crystallization of NaNbO3 in sodium niobium borate glasses. A homogeneous bulk crystallization of the NaNbO3 phase takes place during heat treatments that produces visible-near infrared transparent materials with similar to 30 nm NaNbO3 nanocrystallites. Upon thermal poling, a strong Na+ depleted nonlinear optical thin layer is observed at the anode side that should induce a large internal static electric field. In addition, the chi((2)) response of the poled glass ceramic composites increases from 0.2 up to 1.9 pm/V with the rate of crystallization. Two mechanisms may be considered: a pure structural chi((2)) process connected with the occurrence of a spontaneous ferroelectric polarization or an increase of the chi((3)) response of the nanocrystallites that enhances the electric field induced second harmonic generation process. (c) 2006 American Institute of Physics. | ||||
| Address | |||||
| Corporate Author | Thesis | ||||
| Publisher | American Institute of Physics | Place of Publication | New York, N.Y. | Editor | |
| Language | Wos | 000240876600003 | Publication Date | 2006-10-03 | |
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 0021-8979; | ISBN | Additional Links | UA library record; WoS full record; WoS citing articles | |
| Impact Factor |
2.068 | Times cited | 13 | Open Access | |
| Notes | Approved | Most recent IF: 2.068; 2006 IF: 2.316 | |||
| Call Number | UA @ lucian @ c:irua:61005 | Serial | 1063 | ||
| Permanent link to this record | |||||
| Author | Vandenberghe, W.; Sorée, B.; Magnus, W.; Fischetti, M.V. | ||||
| Title | Generalized phonon-assisted Zener tunneling in indirect semiconductors with non-uniform electric fields : a rigorous approach | Type | A1 Journal article | ||
| Year | 2011 | Publication | Journal of applied physics | Abbreviated Journal | J Appl Phys |
| Volume | 109 | Issue | 12 | Pages | 124503-124503,12 |
| Keywords | A1 Journal article; Condensed Matter Theory (CMT) | ||||
| Abstract | A general framework to calculate the Zener current in an indirect semiconductor with an externally applied potential is provided. Assuming a parabolic valence and conduction band dispersion, the semiconductor is in equilibrium in the presence of the external field as long as the electron-phonon interaction is absent. The linear response to the electron-phonon interaction results in a non-equilibrium system. The Zener tunneling current is calculated from the number of electrons making the transition from valence to conduction band per unit time. A convenient expression based on the single particle spectral functions is provided, enabling the evaluation of the Zener tunneling current under any three-dimensional potential profile. For a one-dimensional potential profile an analytical expression is obtained for the current in a bulk semiconductor, a semiconductor under uniform field, and a semiconductor under a non-uniform field using the WKB (Wentzel-Kramers-Brillouin) approximation. The obtained results agree with the Kane result in the low field limit. A numerical example for abrupt p-n diodes with different doping concentrations is given, from which it can be seen that the uniform field model is a better approximation than the WKB model, but a direct numerical treatment is required for low bias conditions. | ||||
| Address | |||||
| Corporate Author | Thesis | ||||
| Publisher | American Institute of Physics | Place of Publication | New York, N.Y. | Editor | |
| Language | Wos | 000292331200134 | Publication Date | 2011-06-21 | |
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 0021-8979; | ISBN | Additional Links | UA library record; WoS full record; WoS citing articles | |
| Impact Factor |
2.068 | Times cited | 41 | Open Access | |
| Notes | ; William Vandenberghe gratefully acknowledges the support of a Ph.D. stipend from the Institute for the Promotion of Innovation through Science and Technology in Flanders (IWT-Vlaanderen). ; | Approved | Most recent IF: 2.068; 2011 IF: 2.168 | ||
| Call Number | UA @ lucian @ c:irua:90808 | Serial | 1325 | ||
| Permanent link to this record | |||||
| Author | Milovanovic, S.P.; Masir, M.R.; Peeters, F.M. | ||||
| Title | Graphene hall bar with an asymmetric pn-junction | Type | A1 Journal article | ||
| Year | 2013 | Publication | Journal of applied physics | Abbreviated Journal | J Appl Phys |
| Volume | 113 | Issue | 19 | Pages | 193701-193708 |
| Keywords | A1 Journal article; Condensed Matter Theory (CMT) | ||||
| Abstract | We investigated the magnetic field dependence of the Hall and the bend resistances in the ballistic regime for a single layer graphene Hall bar structure containing a pn-junction. When both regions are n-type the Hall resistance dominates and Hall type of plateaus are formed. These plateaus occur as a consequence of the restriction on the angle imposed by Snell's law allowing only electrons with a certain initial angles to transmit though the potential step. The size of the plateau and its position is determined by the position of the potential interface as well as the value of the applied potential. When the second region is p-type, the bend resistance dominates, which is asymmetric in field due to the presence of snake states. Changing the position of the pn-interface in the Hall bar strongly affects these states and therefore the bend resistance is also changed. Changing the applied potential, we observe that the bend resistance exhibits a peak around the charge-neutrality point (CNP), which is independent of the position of the pn-interface, while the Hall resistance shows a sign reversal when the CNP is crossed, which is in very good agreement with a recent experiment [J. R. Williams and C. M. Marcus, Phys. Rev. Lett. 107, 046602 (2011)]. | ||||
| Address | |||||
| Corporate Author | Thesis | ||||
| Publisher | American Institute of Physics | Place of Publication | New York, N.Y. | Editor | |
| Language | Wos | 000319295200022 | Publication Date | 2013-05-16 | |
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 0021-8979; | ISBN | Additional Links | UA library record; WoS full record; WoS citing articles | |
| Impact Factor |
2.068 | Times cited | 7 | Open Access | |
| Notes | This work was supported by the Flemish Science Foundation (FWO-Vl), the European Science Foundation (ESF) under the EUROCORES Program EuroGRAPHENE within the project CONGRAN, and the Methusalem Foundation of the Flemish government. We acknowledge fruitful discussions with M. Barbier. | Approved | Most recent IF: 2.068; 2013 IF: 2.185 | ||
| Call Number | UA @ lucian @ c:irua:108999 | Serial | 1371 | ||
| Permanent link to this record | |||||
| Author | Dong, H.M.; Xu, W.; Peeters, F.M. | ||||
| Title | High-field transport properties of graphene | Type | A1 Journal article | ||
| Year | 2011 | Publication | Journal of applied physics | Abbreviated Journal | J Appl Phys |
| Volume | 110 | Issue | 6 | Pages | 063704,1-063704,6 |
| Keywords | A1 Journal article; Condensed Matter Theory (CMT) | ||||
| Abstract | We present a theoretical investigation on the transport properties of graphene in the presence of high dc driving fields. Considering electron interactions with impurities and acoustic and optical phonons in graphene, we employ the momentum- and energy-balance equations derived from the Boltzmann equation to self-consistently evaluate the drift velocity and temperature of electrons in graphene in the linear and nonlinear response regimes. We find that the current-voltage relation exhibits distinctly nonlinear behavior, especially in the high electric field regime. Under the action of high-fields the large source-drain (sd) current density can be achieved and the current saturation in graphene is incomplete with increasing the sd voltage Vsd up to 3 V. Moreover, for high fields, Vsd>0.1 V, the heating of electrons in graphene occurs. It is shown that the sd current and electron temperature are sensitive to electron density and lattice temperature in the graphene device. This study is relevant to the application of graphene as high-field nano-electronic devices such as graphene field-effect transistors. | ||||
| Address | |||||
| Corporate Author | Thesis | ||||
| Publisher | American Institute of Physics | Place of Publication | New York, N.Y. | Editor | |
| Language | Wos | 000295619300059 | Publication Date | 2011-09-19 | |
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 0021-8979; | ISBN | Additional Links | UA library record; WoS full record; WoS citing articles | |
| Impact Factor |
2.068 | Times cited | 17 | Open Access | |
| Notes | ; This work was supported by the National Natural Science Foundation of China (Grant No. 10974206) and the Department of Science and Technology of Yunnan Province. ; | Approved | Most recent IF: 2.068; 2011 IF: 2.168 | ||
| Call Number | UA @ lucian @ c:irua:93614 | Serial | 1433 | ||
| Permanent link to this record | |||||
| Author | Buschmann, V.; Rodewald, M.; Fuess, H.; Van Tendeloo, G.; Schäffer, C. | ||||
| Title | High resolution electron microscopy study of molecular beam epitaxy grown CoSi2/Si1-xGex/Si(100) heterostructurs | Type | A1 Journal article | ||
| Year | 1999 | Publication | Journal of applied physics | Abbreviated Journal | J Appl Phys |
| Volume | 85 | Issue | 4 | Pages | 2119-2123 |
| Keywords | A1 Journal article; Electron microscopy for materials research (EMAT) | ||||
| Abstract | Two CoSi2/Si1-xGex/Si(100) heterostructures, with different Ge content, made by molecular beam epitaxy are characterized by high resolution electron microscopy. In general, the interface between the CoSi2 thin film and the Si1-xGex layer is of a high structural quality and the strained Si1-xGex layer exhibits few defects. For both samples, different interface structures are present, although the dominant interfacial configuration is similar to the unreconstructed interface present at the CoSi2/Si(100) interface. Only occasionally (2x1) reconstructed interface regions are found which are just a few nanometers in length. Phenomena such as Ge segregation and the introduction of defects are also observed in the Si1-xGex layer. We attribute the minimal presence of the reconstructed interface to both the (2x8):Si1-xGex(100) surface reconstruction and the Ge segregation that takes place. (C) 1999 American Institute of Physics. [S0021-8979(99)02104-0]. | ||||
| Address | |||||
| Corporate Author | Thesis | ||||
| Publisher | American Institute of Physics | Place of Publication | New York, N.Y. | Editor | |
| Language | Wos | 000078403000017 | Publication Date | 2002-07-26 | |
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 0021-8979; | ISBN | Additional Links | UA library record; WoS full record; WoS citing articles | |
| Impact Factor |
2.068 | Times cited | 6 | Open Access | |
| Notes | Approved | Most recent IF: 2.068; 1999 IF: 2.275 | |||
| Call Number | UA @ lucian @ c:irua:103977 | Serial | 1455 | ||
| Permanent link to this record | |||||
| Author | Milovanović, S.P.; Moldovan, D.; Peeters, F.M. | ||||
| Title | Veselago lensing in graphene with a p-n junction: Classical versus quantum effects | Type | A1 Journal article | ||
| Year | 2015 | Publication | Journal of applied physics | Abbreviated Journal | J Appl Phys |
| Volume | 118 | Issue | 118 | Pages | 154308 |
| Keywords | A1 Journal article; Condensed Matter Theory (CMT) | ||||
| Abstract | The feasibility of Veselago lensing in graphene with a p-n junction is investigated numerically for realistic injection leads. Two different set-ups with two narrow leads are considered with absorbing or reflecting side edges. This allows us to separately determine the influence of scattering on electron focusing for the edges and the p-n interface. Both semiclassical and tight-binding simulations show a distinctive peak in the transmission probability that is attributed to the Veselago lensing effect. We investigate the robustness of this peak on the width of the injector, the position of the p-n interface, and different gate potential profiles. Furthermore, the influence of scattering by both short- and long-range impurities is considered. | ||||
| Address | |||||
| Corporate Author | Thesis | ||||
| Publisher | Place of Publication | Editor | |||
| Language | Wos | 000363535800022 | Publication Date | 2015-10-20 | |
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 0021-8979;1089-7550; | ISBN | Additional Links | UA library record; WoS full record; WoS citing articles | |
| Impact Factor |
2.068 | Times cited | 19 | Open Access | |
| Notes | This work was supported by the Flemish Science Foundation (FWO-Vl), the European Science Foundation (ESF) under the EUROCORES Program EuroGRAPHENE within the project CONGRAN, and the Methusalem Foundation of the Flemish government. | Approved | Most recent IF: 2.068; 2015 IF: 2.183 | ||
| Call Number | c:irua:129452 | Serial | 3969 | ||
| Permanent link to this record | |||||
| Author | Amini, M.N.; Saniz, R.; Lamoen, D.; Partoens, B. | ||||
| Title | Hydrogen impurities and native defects in CdO | Type | A1 Journal article | ||
| Year | 2011 | Publication | Journal of applied physics | Abbreviated Journal | J Appl Phys |
| Volume | 110 | Issue | 6 | Pages | 063521,1-063521,7 |
| Keywords | A1 Journal article; Electron microscopy for materials research (EMAT); Condensed Matter Theory (CMT) | ||||
| Abstract | We have used first-principles calculations based on density functional theory to study point defects in CdO within the local density approximation and beyond (LDA+U). Hydrogen interstitials and oxygen vacancies are found to act as shallow donors and can be interpreted as the cause of conductivity in CdO. Hydrogen can also occupy an oxygen vacancy in its substitutional form and also acts as a shallow donor. Similar to what was found for ZnO and MgO, hydrogen creates a multicenter bond with its six oxygen neighbors in CdO. The charge neutrality level for native defects and hydrogen impurities has been calculated. It is shown that in the case of native defects, it is not uniquely defined. Indeed, this level depends highly on the chemical potentials of the species and one can obtain different values for different end states in the experiment. Therefore, a comparison with experiment can only be made if the chemical potentials of the species in the experiment are well defined. However, for the hydrogen interstitial defect, since this level is independent of the chemical potential of hydrogen, one can obtain a unique value for the charge neutrality level. We find that the Fermi level stabilizes at 0.43 eV above the conduction band minimum in the case of the hydrogen interstitial defect, which is in good agreement with the experimentally reported value of 0.4 eV. | ||||
| Address | |||||
| Corporate Author | Thesis | ||||
| Publisher | American Institute of Physics | Place of Publication | New York, N.Y. | Editor | |
| Language | Wos | 000295619300041 | Publication Date | 2011-09-23 | |
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 0021-8979; | ISBN | Additional Links | UA library record; WoS full record; WoS citing articles | |
| Impact Factor |
2.068 | Times cited | 13 | Open Access | |
| Notes | ; The authors gratefully acknowledge financial support from the IWT-Vlaanderen through the ISIMADE project, the FWO-Vlaanderen through Project G.0191.08 and the BOF-NOI of the University of Antwerp. This work was carried out using the HPC infrastructure at the University of Antwerp (CalcUA), a division of the Flemish Supercomputer Center VSC. ; | Approved | Most recent IF: 2.068; 2011 IF: 2.168 | ||
| Call Number | UA @ lucian @ c:irua:93613 | Serial | 1533 | ||
| Permanent link to this record | |||||
| Author | Das, A.; Gordon, I.; Wagner, P.; Cannaerts, M.; Moshchalkov, V.V.; Bruynseraede, Y.; Schuddinck, W.; Van Tendeloo, G.; Borghs, G. | ||||
| Title | Influence of the morphology on the magneto-transport properties of laser-ablated ultrathin La0.7Ba0.3MnO3 films | Type | A1 Journal article | ||
| Year | 2001 | Publication | Journal of applied physics | Abbreviated Journal | J Appl Phys |
| Volume | 90 | Issue | 3 | Pages | 1429-1435 |
| Keywords | A1 Journal article; Electron microscopy for materials research (EMAT) | ||||
| Abstract | |||||
| Address | |||||
| Corporate Author | Thesis | ||||
| Publisher | American Institute of Physics | Place of Publication | New York, N.Y. | Editor | |
| Language | Wos | 000169868300052 | Publication Date | 2002-07-26 | |
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 0021-8979; | ISBN | Additional Links | UA library record; WoS full record; WoS citing articles | |
| Impact Factor |
2.068 | Times cited | 2 | Open Access | |
| Notes | Approved | Most recent IF: 2.068; 2001 IF: 2.128 | |||
| Call Number | UA @ lucian @ c:irua:54816 | Serial | 1649 | ||
| Permanent link to this record | |||||
| Author | Smets, Q.; Verreck, D.; Verhulst, A.S.; Rooyackers, R.; Merckling, C.; Van De Put, M.; Simoen, E.; Vandervorst, W.; Collaert, N.; Thean, V.Y.; Sorée, B.; Groeseneken, G.; Heyns, M.M.; | ||||
| Title | InGaAs tunnel diodes for the calibration of semi-classical and quantum mechanical band-to-band tunneling models | Type | A1 Journal article | ||
| Year | 2014 | Publication | Journal of applied physics | Abbreviated Journal | J Appl Phys |
| Volume | 115 | Issue | 18 | Pages | 184503-184509 |
| Keywords | A1 Journal article; Condensed Matter Theory (CMT) | ||||
| Abstract | Promising predictions are made for III-V tunnel-field-effect transistor (FET), but there is still uncertainty on the parameters used in the band-to-band tunneling models. Therefore, two simulators are calibrated in this paper; the first one uses a semi-classical tunneling model based on Kane's formalism, and the second one is a quantum mechanical simulator implemented with an envelope function formalism. The calibration is done for In0.53Ga0.47As using several p+/intrinsic/n+ diodes with different intrinsic region thicknesses. The dopant profile is determined by SIMS and capacitance-voltage measurements. Error bars are used based on statistical and systematic uncertainties in the measurement techniques. The obtained parameters are in close agreement with theoretically predicted values and validate the semi-classical and quantum mechanical models. Finally, the models are applied to predict the input characteristics of In0.53Ga0.47As n- and p-lineTFET, with the n-lineTFET showing competitive performance compared to MOSFET. | ||||
| Address | |||||
| Corporate Author | Thesis | ||||
| Publisher | American Institute of Physics | Place of Publication | New York, N.Y. | Editor | |
| Language | Wos | 000336919400048 | Publication Date | 2014-05-14 | |
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 0021-8979;1089-7550; | ISBN | Additional Links | UA library record; WoS full record; WoS citing articles | |
| Impact Factor |
2.068 | Times cited | 34 | Open Access | |
| Notes | ; Quentin Smets and Devin Verreck gratefully acknowledge the support of a Ph. D. stipend from IWT-Vlaanderen. This work was supported by imec's industrial affiliation program. The authors thank Kim Baumans, Johan Feyaerts, Johan De Cooman, Alireza Alian, and Jos Moonens for their support in process development; Bastien Douhard and Joris Delmotte for SIMS characterization; Alain Moussa for AFM characterization; Joris Van Laer and Tom Daenen for their support in electrical characterization; Kuo-Hsing Kao, Mehbuba Tanzid, and Ali Pourghaderi for their support in modeling. ; | Approved | Most recent IF: 2.068; 2014 IF: 2.183 | ||
| Call Number | UA @ lucian @ c:irua:118009 | Serial | 1667 | ||
| Permanent link to this record | |||||
| Author | Shapoval, O.; Huehn, S.; Verbeeck, J.; Jungbauer, M.; Belenchuk, A.; Moshnyaga, V. | ||||
| Title | Interface-controlled magnetism and transport of ultrathin manganite films | Type | A1 Journal article | ||
| Year | 2013 | Publication | Journal of applied physics | Abbreviated Journal | J Appl Phys |
| Volume | 113 | Issue | 17 | Pages | 17c711-3 |
| Keywords | A1 Journal article; Electron microscopy for materials research (EMAT) | ||||
| Abstract | We report ferromagnetic, T-C = 240 K, and metallic, T-MI = 250 K, behaviors of a three unit cell thick interface engineered lanthanum manganite film, grown by metalorganic aerosol deposition technique on SrTiO3(100) substrates. Atomically resolved electron microscopy and chemical analysis show that ultrathin manganite films start to grow with La-O layer on a strongly Mn/Ti-intermixed interface, engineered by an additional deposition of 2 u.c. of Sr-Mn-O. Such interface engineering results in a hole-doped manganite layer and stabilizes ferromagnetism and metallic conductivity down to the thickness of d = 3 u.c. The films with d = 8 u.c. demonstrate a bulk-like transport behavior with T-MI similar to T-C = 310 – 330 K. (C) 2013 American Institute of Physics. | ||||
| Address | |||||
| Corporate Author | Thesis | ||||
| Publisher | American Institute of Physics | Place of Publication | New York, N.Y. | Editor | |
| Language | Wos | 000319292800195 | Publication Date | 2013-03-19 | |
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 0021-8979; | ISBN | Additional Links | UA library record; WoS full record; WoS citing articles | |
| Impact Factor |
2.068 | Times cited | 7 | Open Access | |
| Notes | Ifox; Countatoms; Vortex; Esteem2; esteem2jra3 ECASJO; | Approved | Most recent IF: 2.068; 2013 IF: 2.185 | ||
| Call Number | UA @ lucian @ c:irua:109009UA @ admin @ c:irua:109009 | Serial | 1692 | ||
| Permanent link to this record | |||||
| Author | Zhang, M.-L.; March, N.H.; Peeters, A.; van Alsenoy, C.; Howard, I.; Lamoen, D.; Leys, F. | ||||
| Title | Loss rate of a plasticizer in a nylon matrix calculated using macroscopic reaction-diffusion kinetics | Type | A1 Journal article | ||
| Year | 2003 | Publication | Journal Of Applied Physics | Abbreviated Journal | J Appl Phys |
| Volume | 93 | Issue | Pages | 1525-1532 | |
| Keywords | A1 Journal article; Electron Microscopy for Materials Science (EMAT); | ||||
| Abstract | |||||
| Address | |||||
| Corporate Author | Thesis | ||||
| Publisher | American Institute of Physics | Place of Publication | New York, N.Y. | Editor | |
| Language | Wos | 000180630200031 | Publication Date | 2003-02-10 | |
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 0021-8979; | ISBN | Additional Links | UA library record; WoS full record; | |
| Impact Factor |
2.068 | Times cited | Open Access | ||
| Notes | Approved | Most recent IF: 2.068; 2003 IF: 2.171 | |||
| Call Number | UA @ lucian @ c:irua:41405 | Serial | 1844 | ||
| Permanent link to this record | |||||
| Author | Milovanović, S.P.; Masir, M.R.; Peeters, F.M. | ||||
| Title | Magnetic electron focusing and tuning of the electron current with a pn-junction | Type | A1 Journal article | ||
| Year | 2014 | Publication | Journal of applied physics | Abbreviated Journal | J Appl Phys |
| Volume | 115 | Issue | 4 | Pages | 043719-6 |
| Keywords | A1 Journal article; Condensed Matter Theory (CMT) | ||||
| Abstract | Transverse magnetic focusing properties of graphene using a ballistic four terminal structure are investigated. The electric response is obtained using the semiclassical billiard model. The transmission exhibits pronounced peaks as a consequence of skipping orbits at the edge of the structure. When we add a pn-junction between the two probes, snake states along the pn-interface appear. Injected electrons are guided by the pn-interface to one of the leads depending on the value of the applied magnetic field. Oscillations in the resistance are found depending on the amount of particles that end up in each lead. | ||||
| Address | |||||
| Corporate Author | Thesis | ||||
| Publisher | American Institute of Physics | Place of Publication | New York, N.Y. | Editor | |
| Language | Wos | 000331210800066 | Publication Date | 2014-01-30 | |
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 0021-8979;1089-7550; | ISBN | Additional Links | UA library record; WoS full record; WoS citing articles | |
| Impact Factor |
2.068 | Times cited | 21 | Open Access | |
| Notes | This work was supported by the Flemish Science Foundation (FWO-Vl), the European Science Foundation (ESF) under the EUROCORES Program EuroGRAPHENE within the project CONGRAN, and the Methusalem Foundation of the Flemish government. | Approved | Most recent IF: 2.068; 2014 IF: 2.183 | ||
| Call Number | UA @ lucian @ c:irua:115801 | Serial | 1866 | ||
| Permanent link to this record | |||||
| Author | Papp, G.; Peeters, F.M. | ||||
| Title | Magnetoresistance in a hybrid ferromagnetic/semiconductor device | Type | A1 Journal article | ||
| Year | 2010 | Publication | Journal of applied physics | Abbreviated Journal | J Appl Phys |
| Volume | 107 | Issue | 6 | Pages | 063718,1-063718,4 |
| Keywords | A1 Journal article; Condensed Matter Theory (CMT) | ||||
| Abstract | Ballistic transport of a two-dimensional electron gas (2DEG) in a rectangle shaped wire, subjected to a local nonhomogeneous magnetic field that results from an in-plane magnetized ferromagnetic (FM) strip deposited above the 2DEG, is investigated theoretically. We found a positive magnetoresistance (MR), which exhibits hysteresis behavior with respect to the direction of the magnetic field sweep, in agreement with a recent experiment. This positive MR can be tuned by applying a gate voltage to the FM strip. | ||||
| Address | |||||
| Corporate Author | Thesis | ||||
| Publisher | American Institute of Physics | Place of Publication | New York, N.Y. | Editor | |
| Language | Wos | 000276210800063 | Publication Date | 2010-04-01 | |
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 0021-8979; | ISBN | Additional Links | UA library record; WoS full record; WoS citing articles | |
| Impact Factor |
2.068 | Times cited | 10 | Open Access | |
| Notes | ; ; | Approved | Most recent IF: 2.068; 2010 IF: 2.079 | ||
| Call Number | UA @ lucian @ c:irua:82281 | Serial | 1927 | ||
| Permanent link to this record | |||||