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Author Cloots, R.; Rulmont, A.; Krekels, T.; Van Tendeloo, G.; Diko, P.; Ausloos, M. openurl 
  Title Investigation by electron diffraction microscopy of (RE)BaCuOS polycrystalline ceramic compounds: interpretation of unexpected superstructures and influence of secondary phases Type A1 Journal article
  Year 1993 Publication Journal of crystal growth Abbreviated Journal J Cryst Growth  
  Volume 129 Issue Pages 394-404  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Amsterdam Editor  
  Language Wos A1993KY53000003 Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0022-0248 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor (up) 1.698 Times cited 5 Open Access  
  Notes Approved no  
  Call Number UA @ lucian @ c:irua:7503 Serial 1726  
Permanent link to this record
 

 
Author Volkov, V.V.; Van Tendeloo, G.; Tsirkov, G.A.; Cherkashina, N.V.; Vargaftik, M.N.; Moiseev, I.I.; Novotortsev, V.M.; Kvit, A.V.; Chuvilin, A.L. doi  openurl
  Title Long- and short-distance ordering of the metal cores of giant Pd clusters Type A1 Journal article
  Year 1996 Publication Journal of crystal growth Abbreviated Journal J Cryst Growth  
  Volume 163 Issue Pages 377-387  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Amsterdam Editor  
  Language Wos A1996UW51100006 Publication Date 2003-04-30  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0022-0248; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor (up) 1.698 Times cited 28 Open Access  
  Notes Approved no  
  Call Number UA @ lucian @ c:irua:16866 Serial 1834  
Permanent link to this record
 

 
Author Deylgat, E.; Chen, E.; Fischetti, M.V.; Sorée, B.; Vandenberghe, W.G. pdf  doi
openurl 
  Title Image-force barrier lowering in top- and side-contacted two-dimensional materials Type A1 Journal article
  Year 2022 Publication Solid state electronics Abbreviated Journal Solid State Electron  
  Volume 198 Issue Pages 108458-4  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract We compare the image-force barrier lowering (IFBL) and calculate the resulting contact resistance for four different metal-dielectric-two-dimensional (2D) material configurations. We analyze edge contacts in three different geometries (a homogeneous dielectric throughout, including the 2D layer; a homogeneous dielectric surrounding the 2D layer, both ungated and back gated) and also a top-contact assuming a homogeneous dielectric. The image potential energy of each configuration is determined and added to the Schottky energy barrier which is calculated assuming a textbook Schottky potential. For each configuration, the contact resistivity is calculated using the WKB approximation and the effective mass approximation using either SiO2 or HfO2 as the surrounding dielectric. We obtain the lowest contact resistance of 1 k Omega mu m by n-type doping an edge contacted transition metal-dichalcogenide (TMD) monolayer, sandwiched between SiO2 dielectric, with similar to 1012 cm-2 donor atoms. When this optimal configuration is used, the contact resistance is lowered by a factor of 50 compared to the situation when the IFBL is not considered.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos 000876289800003 Publication Date 2022-09-22  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0038-1101 ISBN Additional Links UA library record; WoS full record  
  Impact Factor (up) 1.7 Times cited Open Access Not_Open_Access  
  Notes Approved Most recent IF: 1.7  
  Call Number UA @ admin @ c:irua:191556 Serial 7312  
Permanent link to this record
 

 
Author Bogaerts, A.; Yusupov, M.; Razzokov, J.; Van der Paal, J. pdf  url
doi  openurl
  Title Plasma for cancer treatment: How can RONS penetrate through the cell membrane? Answers from computer modeling Type A1 Journal article
  Year 2019 Publication Frontiers of Chemical Science and Engineering Abbreviated Journal Front Chem Sci Eng  
  Volume Issue Pages  
  Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract Plasma is gaining increasing interest for cancer

treatment, but the underlying mechanisms are not yet fully

understood. Using computer simulations at the molecular

level, we try to gain better insight in how plasma-generated

reactive oxygen and nitrogen species (RONS) can

penetrate through the cell membrane. Specifically, we

compare the permeability of various (hydrophilic and

hydrophobic) RONS across both oxidized and nonoxidized cell membranes. We also study pore formation,

and how it is hampered by higher concentrations of

cholesterol in the cell membrane, and we illustrate the

much higher permeability of H2O2 through aquaporin

channels. Both mechanisms may explain the selective

cytotoxic effect of plasma towards cancer cells. Finally, we

also discuss the synergistic effect of plasma-induced

oxidation and electric fields towards pore formation.

Keywords plasma medicine, cancer treatment, computer

modelling, cell membrane, reactive oxygen and nitrogen

species
 
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos 000468848400004 Publication Date 2019-03-22  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 2095-0179 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor (up) 1.712 Times cited 5 Open Access Not_Open_Access: Available from 23.05.2020  
  Notes We acknowledge financial support from the Research Foundation–Flanders (FWO; Grant Nos. 1200216N and 11U5416N). The computational work was carried out using the Turing HPC infrastructure at the CalcUA core facility of the Universiteit Antwerpen (UA), a division of the Flemish Supercomputer Center VSC, funded by the Hercules Foundation, the Flemish Government (department EWI) and the UA. We are also very thankful to R. Cordeiro for the very interesting discussions. Approved Most recent IF: 1.712  
  Call Number PLASMANT @ plasmant @UA @ admin @ c:irua:159977 Serial 5172  
Permanent link to this record
 

 
Author Brault, P.; Chamorro-Coral, W.; Chuon, S.; Caillard, A.; Bauchire, J.-M.; Baranton, S.; Coutanceau, C.; Neyts, E. pdf  doi
openurl 
  Title Molecular dynamics simulations of initial Pd and PdO nanocluster growth in a magnetron gas aggregation source Type A1 Journal article
  Year 2019 Publication Frontiers of Chemical Science and Engineering Abbreviated Journal Front Chem Sci Eng  
  Volume 13 Issue 2 Pages 324-329  
  Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract Molecular dynamics simulations are carried out for describing growth of Pd and PdO nanoclusters using the ReaxFF force field. The resulting nanocluster structures are successfully compared to those of nanoclusters experimentally grown in a gas aggregation source. The PdO structure is quasi-crystalline as revealed by high resolution transmission microscope analysis for experimental PdO nanoclusters. The role of the nanocluster temperature in the molecular dynamics simulated growth is highlighted.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos 000468848400009 Publication Date 2019-03-26  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 2095-0179 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor (up) 1.712 Times cited 3 Open Access Not_Open_Access  
  Notes Approved Most recent IF: 1.712  
  Call Number UA @ admin @ c:irua:160278 Serial 5276  
Permanent link to this record
 

 
Author Martin, J.M.L.; El-Yazal, J.; François, J.P.; Gijbels, R. doi  openurl
  Title The structure and energetics of B3N2, B2N3, and BN4: symmetry breaking effects in B3N2 Type A1 Journal article
  Year 1995 Publication Molecular physics Abbreviated Journal Mol Phys  
  Volume 85 Issue Pages 527-537  
  Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication London Editor  
  Language Wos A1995RM01600007 Publication Date 2006-04-28  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0026-8976;1362-3028; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor (up) 1.72 Times cited 19 Open Access  
  Notes Approved  
  Call Number UA @ lucian @ c:irua:12279 Serial 3276  
Permanent link to this record
 

 
Author Martin, J.M.L.; Slanina, Z.; François, J.P.; Gijbels, R. doi  openurl
  Title The structure, energetics, and harmonic vibrations of B3N and BN3 Type A1 Journal article
  Year 1994 Publication Molecular physics Abbreviated Journal Mol Phys  
  Volume 82 Issue Pages 155-164  
  Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication London Editor  
  Language Wos A1994NN66200010 Publication Date 2006-04-04  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0026-8976;1362-3028; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor (up) 1.72 Times cited 19 Open Access  
  Notes Approved PHYSICS, APPLIED 28/145 Q1 #  
  Call Number UA @ lucian @ c:irua:10254 Serial 3303  
Permanent link to this record
 

 
Author Van Holsbeke, C.S.; Leemans, G.; Vos, W.G.; de Backer, J.W.; Vinchurkar, S.C.; Geldof, M.; Verdonck, P.R.; Parizel, P.M.; van Schil, P.E.; de Backer, W.A. pdf  doi
openurl 
  Title Functional Respiratory Imaging as a tool to personalize respiratory treatment in subjects with unilateral diaphragmatic paralysis Type A1 Journal article
  Year 2013 Publication Respiratory care Abbreviated Journal Resp Care  
  Volume Issue Pages 1-20  
  Keywords A1 Journal article; Condensed Matter Theory (CMT); Antwerp Surgical Training, Anatomy and Research Centre (ASTARC); Laboratory Experimental Medicine and Pediatrics (LEMP)  
  Abstract In two subjects with a unilateral diaphragmatic paralysis and complaints of dyspnea, a completely different treatment approach was chosen despite similar anatomical and physiological abnormalities. These decisions were supported by the results generated by Functional Respiratory Imaging (FRI). FRI was able to generate functional information with respect to lobar ventilation and local drug deposition. In one subject, it was found that some lobes were poorly ventilated and drug deposition simulation showed that some regions were undertreated. This subject underwent a diaphragm plication to restore the ventilation. In the other subject, it was found that all lobes were still ventilated. A conservative approach with regular follow-up was chosen to wait for spontaneous recovery of the diaphragmatic function. Both subjects improved subjectively and objectively. These cases demonstrate how novel medical imaging techniques such as FRI can be used to personalize respiratory treatment in subjects with unilateral diaphragmatic paralysis.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Dallas, Tex. Editor  
  Language Wos 000349200100024 Publication Date 2013-12-11  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0020-1324;1943-3654; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor (up) 1.733 Times cited 5 Open Access  
  Notes ; ; Approved Most recent IF: 1.733; 2013 IF: 1.840  
  Call Number UA @ lucian @ c:irua:112982 Serial 1303  
Permanent link to this record
 

 
Author Rafiaani, P.; Dikopoulou, Z.; Van Dael, M.; Kuppens, T.; Azadi, H.; Lebailly, P.; Van Passel, S. url  doi
openurl 
  Title Identifying Social Indicators for Sustainability Assessment of CCU Technologies: A Modified Multi-criteria Decision Making Type A1 Journal Article
  Year 2020 Publication Social Indicators Research Abbreviated Journal Soc Indic Res  
  Volume 147 Issue 1 Pages 15-44  
  Keywords A1 Journal Article; Engineering Management (ENM) ;  
  Abstract Carbon capture and utilization (CCU) technologies capture CO2 waste emissions and utilize them to generate new products (such as fuels, chemicals, and materials) with various environmental, economic, and social opportunities. As most of these CCU technologies are in the R&D stage, their technical and economic viability are examined with less attention to the social aspect which is an important pillar for a holistic sustainability assessment. The lack of systematic social impact research is mainly due to the difficulty of identifying and quantifying social aspects through the entire life cycle of products. We will fill this gap for CCU technologies and identify the main social indicators. A multi-criteria decision making tool: TOPSIS (technique for order of preference by similarity to ideal solution) was applied to empirically determine which indicators are more relevant for assessing the social impact of a company operating CCU activities within a European context. First, seeing that social impact categories are linked to key stakeholder groups, we considered workers, consumers, and local communities as relevant stakeholders. Second, the main social impact categories and their potential performance indicators associated to each group of stakeholders were listed using the United Nations Environment Program/Society of Environmental Toxicology and Chemistry (UNEP/SETAC) guidelines. In the third step, an online questionnaire was distributed to identify the main social categories and indicators for CCU, to which 33 European CCU experts responded. Finally, a modified TOPSIS was applied to rank the indicators based on their relevance. We found that the indicators related to “end of life responsibility” and “transparency” within a CCU company achieved the highest rank affecting the consumers group, whereas “fair salary” and “equal opportunities/discriminations” were determined as the most relevant impact categories for the workers. For the local community group, “secure living conditions” and “local employment” received the highest priority from the experts’ point of view. Furthermore, “health and safety” considerations were identified as one of the most important criteria affecting all three groups of stakeholders. The ranking list of the main social indicators identified in our study provides the basis for the next steps in the social sustainability assessment of CCU technologies; that is, data collection and impact assessment. Our outcomes can also be used to inform the producers regarding the most and least relevant social aspects of CCU so that the potential social impacts caused by their production activities can be improved or prevented.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos 000511863600002 Publication Date 2019-07-06  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0303-8300 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor (up) 1.743 Times cited Open Access  
  Notes We would also like to thank James Morrison from the JamesEdits agency for proof reading and editing the article. Approved Most recent IF: NA  
  Call Number ENM @ enm @c:irua:166591 Serial 6354  
Permanent link to this record
 

 
Author Volkov, V.V.; van Landuyt, J.; Marushkin, K.M.; Gijbels, R.; Férauge, C.; Vasilyev, M.G.; Shelyakin, A.A.; Sokolovsky, A.A. openurl 
  Title Characterization of LPE grown InGaAsP/InP heterostructures: IR-LED at 1.66 μm used for the remote monitoring of methane gas Type A1 Journal article
  Year 1997 Publication Journal of crystal growth Abbreviated Journal J Cryst Growth  
  Volume 173 Issue Pages 285-296  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT); Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Amsterdam Editor  
  Language Wos A1997XC98100008 Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0022-0248 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor (up) 1.751 Times cited 4 Open Access  
  Notes Approved Most recent IF: 1.751; 1997 IF: 1.259  
  Call Number UA @ lucian @ c:irua:20459 Serial 324  
Permanent link to this record
 

 
Author Jacobs, K.; van Daele, B.; Leys, M.; Moerman, I.; Van Tendeloo, G. doi  openurl
  Title Effect of growth interrupt and growth rate on MOVPE-grown InGaN/GaN MQW structures Type A1 Journal article
  Year 2003 Publication Journal of crystal growth Abbreviated Journal J Cryst Growth  
  Volume 248 Issue Pages 498-502  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Amsterdam Editor  
  Language Wos 000180446900091 Publication Date 2002-12-28  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0022-0248; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor (up) 1.751 Times cited 14 Open Access  
  Notes was dubbel; dubbel eruit gehaald Approved Most recent IF: 1.751; 2003 IF: 1.414  
  Call Number UA @ lucian @ c:irua:54785 Serial 810  
Permanent link to this record
 

 
Author Pardo, J.A.; Santiso, J.; Solis, C.; Garcia, G.; Figueras, A.; Rossell, M.D.; Van Tendeloo, G. pdf  doi
openurl 
  Title Epitaxial Sr4Fe6O13\pm\delta films obtained by pulsed laser deposition Type A1 Journal article
  Year 2004 Publication Journal of crystal growth Abbreviated Journal J Cryst Growth  
  Volume 262 Issue Pages 334-340  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Amsterdam Editor  
  Language Wos 000189098700052 Publication Date 2003-11-15  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0022-0248; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor (up) 1.751 Times cited 8 Open Access  
  Notes Iap V-1 Approved Most recent IF: 1.751; 2004 IF: 1.707  
  Call Number UA @ lucian @ c:irua:54786 Serial 1074  
Permanent link to this record
 

 
Author Nistor, L.C.; Ghica, C.; Matei, D.; Dinescu, G.; Dinescu, M.; Van Tendeloo, G. pdf  doi
openurl 
  Title Growth and characterization of a-axis textured ZnO thin films Type A1 Journal article
  Year 2005 Publication Journal of crystal growth Abbreviated Journal J Cryst Growth  
  Volume 277 Issue Pages 26-31  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Amsterdam Editor  
  Language Wos 000228737900005 Publication Date 2005-02-02  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0022-0248; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor (up) 1.751 Times cited 44 Open Access  
  Notes Bil 01/73 Approved Most recent IF: 1.751; 2005 IF: 1.681  
  Call Number UA @ lucian @ c:irua:54787 Serial 1390  
Permanent link to this record
 

 
Author Lei, C.H.; Van Tendeloo, G.; Lisoni, J.G.; Siegert, M.; Schubert, J. doi  openurl
  Title Growth kinetic of MgO film on r-plane of sapphire: microstructural study Type A1 Journal article
  Year 2001 Publication Journal of crystal growth Abbreviated Journal J Cryst Growth  
  Volume 226 Issue 2/3 Pages 419-429  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Amsterdam Editor  
  Language Wos 000169535100029 Publication Date 2002-07-26  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0022-0248; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor (up) 1.751 Times cited 7 Open Access  
  Notes Approved Most recent IF: 1.751; 2001 IF: 1.283  
  Call Number UA @ lucian @ c:irua:54783 Serial 1391  
Permanent link to this record
 

 
Author Stefan, M.; Nistor, S.V.; Mateescu, D.C.; Abakumov, A.M. pdf  doi
openurl 
  Title Growth of pure and doped Rb2ZnCl4and K2ZnCl4 single crystals by Czochralski technique Type A1 Journal article
  Year 1999 Publication Journal of crystal growth Abbreviated Journal J Cryst Growth  
  Volume 200 Issue 1-2 Pages 148-154  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract High-quality single crystals of Rb2ZnCl4 and K2ZnCl4, pure or doped with Cu, Mn, Cd, Tl, Sn, Pb and In cations, were grown by Czochralski technique in argon atmosphere, using an experimental setup that allows direct visual access to the whole growth zone. Slowly cooled crystals exhibit excellent cleavage properties. Fastly cooled crystals do cleave poorly. As shown by X-ray diffraction studies, such K2ZnCl4 samples exhibit inclusions of the high-temperature Pmcn phase with lattice parameters a = 7.263(2) Angstrom, b = 12.562(2) Angstrom and c = 8.960(4) Angstrom in the P2(1) cn room temperature stable phase. ESR and optical spectroscopy studies revealed the localization and valence state of the cation dopants. (C) 1999 Elsevier Science B.V. All rights reserved.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Amsterdam Editor  
  Language Wos 000079840600021 Publication Date 2002-07-25  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0022-0248; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor (up) 1.751 Times cited 13 Open Access  
  Notes Approved Most recent IF: 1.751; 1999 IF: 1.492  
  Call Number UA @ lucian @ c:irua:102909 Serial 1395  
Permanent link to this record
 

 
Author Buschmann, V.; Rodewald, M.; Fuess, H.; Van Tendeloo, G.; Schaffer, C. pdf  doi
openurl 
  Title Hetero-epitaxial growth of CoSi2 thin films on Si(100) : template effects and epitaxial orientations Type A1 Journal article
  Year 1998 Publication Journal of crystal growth Abbreviated Journal J Cryst Growth  
  Volume 191 Issue 3 Pages 430-438  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract This HREM investigation focuses on the influence of point defects on the final epitaxial relation and atomic interface configuration in a CoSi2/Si(1 0 0) heterostructure. A two-step SPE-MBE grown CoSi2/Si(1 0 0) system is used and, by altering the number of deposited Co monolayers in the template layer, the point defect behavior is studied. We propose a film growth model in which the knowledge about the reconstructed (2 x 1) : Si(1 0 0) surface, the point defect behavior in the presence of an interface, especially a silicide interface, the migration of point defects through a lattice by formation of [1 0 0]-split interstitial (dumbbell) atomic configurations, and a new type of extended defect configurations in diamond type materials will all amalgamate. (C) 1998 Published by Elsevier Science B.V. All rights reserved.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Amsterdam Editor  
  Language Wos 000075032500017 Publication Date 2002-07-25  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0022-0248; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor (up) 1.751 Times cited 6 Open Access  
  Notes Approved Most recent IF: 1.751; 1998 IF: 1.307  
  Call Number UA @ lucian @ c:irua:102930 Serial 1418  
Permanent link to this record
 

 
Author Lei, C.H.; Van Tendeloo, G.; Siegert, M.; Schubert, J.; Buchal, C. pdf  doi
openurl 
  Title Structural investigation of the epitaxial yittria-stabilized zirconia films deposited on (001) silicon by laser ablation Type A1 Journal article
  Year 2001 Publication Journal of crystal growth Abbreviated Journal J Cryst Growth  
  Volume 222 Issue 3 Pages 558-564  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract Yittria-stabilized zirconia (YSZ) films doped with 3 and 9 vol%. Y(2)O(3), respectively, are epitaxially deposited on (0 0 1) silicon substrates by means of pulsed laser deposition (PLD) technique. Transmission electron microscopy (TEM) and X-ray diffraction are mainly combined to study the film microstructure. It is: found that the film structure strongly depends on the amount of Y(2)O(3) dopant. 99/0 Y(2)O(3)-doped films display a near cubic structure; 45 degrees 1/2(1 1 0) dislocations are the main defects in the film and thermal cracks are formed during cooling. The 3% Y(2)O(3)-doped films are dominated by {1 1 0} twin-related tetragonal domains in which monoclinic phase is found. The films are free of thermal cracks even for films thicker than 2 mum. (C) 2001 Elsevier Science B.V. All rights reserved.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Amsterdam Editor  
  Language Wos 000166701500020 Publication Date 2002-07-25  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0022-0248; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor (up) 1.751 Times cited 12 Open Access  
  Notes Approved Most recent IF: 1.751; 2001 IF: 1.283  
  Call Number UA @ lucian @ c:irua:104211 Serial 3240  
Permanent link to this record
 

 
Author Bal, K.M.; Cautereels, J.; Blockhuys, F. pdf  url
doi  openurl
  Title Structures and spectroscopic properties of sulfur-nitrogen-pnictogen chains : R2P-N=S=N-PR2 and R2P-N=S=N-AsR2 Type A1 Journal article
  Year 2017 Publication Journal of molecular structure Abbreviated Journal J Mol Struct  
  Volume 1132 Issue Pages 102-108  
  Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract The conformational and configurational preferences of Me2PNSNPMe2 (3) and Me2PNSNAsMe2 (4) have been identified using quantum chemical calculations at the DFT/B3LYP/6-311+G* level of theory. An approach in which energetic, structural (geometries and bond orders), electronic (analysis of the electron density) and spectroscopic properties are combined leads to the conclusion that these sulfur-nitrogen-pnictogen chains share many of the properties of their chalcogen-nitrogen analogues but that the through-space intramolecular interactions favouring the Z,Z configuration are even weaker than in these latter compounds. The results of this analysis also lead to an unambiguous assignment of the variable-temperature 31P and 15N NMR spectra of these compounds and their structures both in solution and in the solid state.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Amsterdam Editor  
  Language Wos 000393254400015 Publication Date 2016-08-07  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0022-2860 ISBN Additional Links UA library record; WoS full record  
  Impact Factor (up) 1.753 Times cited Open Access Not_Open_Access: Available from 03.10.2019  
  Notes Approved Most recent IF: 1.753  
  Call Number UA @ lucian @ c:irua:145533 Serial 4726  
Permanent link to this record
 

 
Author Gezahegn, T.W.; Van Passel, S.; Berhanu, T.; D'Haese, M.; Maertens, M. pdf  doi
openurl 
  Title Big is efficient : evidence from agricultural cooperatives in Ethiopia Type A1 Journal article
  Year 2019 Publication Agricultural Economics Abbreviated Journal Agr Econ-Blackwell  
  Volume 50 Issue 50 Pages 555-566  
  Keywords A1 Journal article; Economics; Engineering Management (ENM)  
  Abstract In Ethiopia, there is a renewed interest in agricultural cooperatives as an institutional tool to improve the welfare of smallholder farmers. One of the pathways through which cooperatives benefit their members is scale economies. However, the establishment of cooperatives in Ethiopia seems to pay little attention to the size of the organizations. This article aims at investigating the effect of size on cost efficiency of agricultural cooperatives. More specifically, the purpose is to examine whether a single cooperative can serve a given number of farmers at a lower cost than two or more smaller cooperatives could. We employ the concept of cost subadditivity to compare the cost efficiency of large versus small cooperatives, and by extension unilateral actions. We estimate a flexible production technology using cross-sectional cooperative-level data. Findings show that costs would drop by 78% to 181% if farmers join hands in relatively large rather than small cooperatives.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos 000480797700001 Publication Date 2019-08-01  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0169-5150 ISBN Additional Links UA library record; WoS full record  
  Impact Factor (up) 1.758 Times cited Open Access  
  Notes ; VLIR-UOS-ZEIN2015PR406 (13V95615T) PROGRAMME(TEAM), Belgium ; Approved Most recent IF: 1.758  
  Call Number UA @ admin @ c:irua:161812 Serial 6161  
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Author Bafekry, A.; Ghergherehchi, M.; Shayesteh, S.F.; Peeters, F.M. pdf  doi
openurl 
  Title Adsorption of molecules on C3N nanosheet : a first-principles calculations Type A1 Journal article
  Year 2019 Publication Chemical physics Abbreviated Journal Chem Phys  
  Volume 526 Issue 526 Pages 110442  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract Using first-principles calculations we investigate the interaction of various molecules, including H-2, N-2, CO, CO2, H2O, H2S, NH3, CH4 with a C3N nanosheet. Due to the weaker interaction between H-2, N-2, CO, CO2, H2O, H2S, NH3, and CH4 molecules with C3N, the adsorption energy is small and does not yield any significant distortion of the C3N lattice and the molecules are physisorbed. Calculated charge transfer shows that these molecules act as weak donors. However, adsorption of O-2, NO, NO2 and SO2 molecules are chemisorbed, they receive electrons from C3N and act as a strong acceptor. They interact strongly through hybridizing its frontier orbitals with the p-orbital of C3N, modifying the electronic structure of C3N. Our theoretical studies indicate that C3N-based sensor has a high potential for O-2, NO, NO2 and SO2 molecules detection.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos 000481606000006 Publication Date 2019-07-09  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0301-0104 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor (up) 1.767 Times cited 46 Open Access  
  Notes ; This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIT) (NRF-2017R1A2B2011989). In addition, this work was supported by the FLAG-ERA project 2DTRANS and the Flemish Science Foundation (FWO-Vl). ; Approved Most recent IF: 1.767  
  Call Number UA @ admin @ c:irua:161779 Serial 5405  
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Author Rouaiguia, L.; Djebli, M.; Peeters, F. doi  openurl
  Title Random charge fluctuation effect on strongly correlated dust particles confined in two dimensions Type A1 Journal article
  Year 2008 Publication Physics letters : A Abbreviated Journal Phys Lett A  
  Volume 372 Issue 24 Pages 4487-4492  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Amsterdam Editor  
  Language Wos 000257203700030 Publication Date 2008-04-17  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0375-9601; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor (up) 1.772 Times cited 4 Open Access  
  Notes Approved Most recent IF: 1.772; 2008 IF: 2.174  
  Call Number UA @ lucian @ c:irua:69627 Serial 2809  
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Author Kukhlevsky, S.V.; Mechler, M.; Csapo, L.; Janssens, K. doi  openurl
  Title Near-field diffraction of fs and sub-fs pulses: super resolution of NSOM in space and time Type A1 Journal article
  Year 2003 Publication Physics letters : A Abbreviated Journal Phys Lett A  
  Volume 319 Issue Pages 439-447  
  Keywords A1 Journal article; AXES (Antwerp X-ray Analysis, Electrochemistry and Speciation)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos 000187351800003 Publication Date 2003-11-07  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0375-9601 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor (up) 1.772 Times cited 10 Open Access  
  Notes Approved Most recent IF: 1.772; 2003 IF: 1.324  
  Call Number UA @ admin @ c:irua:42959 Serial 5744  
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Author Willems, B.; Martineau, P.M.; Fisher, D.; van Royen, J.; Van Tendeloo, G. doi  openurl
  Title Dislocation distributions in brown diamond Type A1 Journal article
  Year 2006 Publication Physica status solidi: A: applied research Abbreviated Journal Phys Status Solidi A  
  Volume 203 Issue 12 Pages 3076-3080  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Berlin Editor  
  Language Wos 000240967400014 Publication Date 2006-09-11  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1862-6300;1862-6319; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor (up) 1.775 Times cited 21 Open Access  
  Notes Approved Most recent IF: 1.775; 2006 IF: NA  
  Call Number UA @ lucian @ c:irua:61002 Serial 730  
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Author Mortet, V.; Zhang, L.; Eckert, M.; D'Haen, J.; Soltani, A.; Moreau, M.; Troadec, D.; Neyts, E.; De Jaeger, J.C.; Verbeeck, J.; Bogaerts, A.; Van Tendeloo, G.; Haenen, K.; Wagner, P. pdf  doi
openurl 
  Title Grain size tuning of nanocrystalline chemical vapor deposited diamond by continuous electrical bias growth : experimental and theoretical study Type A1 Journal article
  Year 2012 Publication Physica status solidi : A : applications and materials science Abbreviated Journal Phys Status Solidi A  
  Volume 209 Issue 9 Pages 1675-1682  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT); Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract In this work, a detailed structural and spectroscopic study of nanocrystalline diamond (NCD) thin films grown by a continuous bias assisted CVD growth technique is reported. This technique allows the tuning of grain size and phase purity in the deposited material. The crystalline properties of the films are characterized by SEM, TEM, EELS, and Raman spectroscopy. A clear improvement of the crystalline structure of the nanograined diamond film is observed for low negative bias voltages, while high bias voltages lead to thin films consisting of diamond grains of only ∼10 nm nanometer in size, showing remarkable similarities with so-called ultrananocrystalline diamond. These layers arecharacterized by an increasing amount of sp2-bonded carbon content of the matrix in which the diamond grains are embedded. Classical molecular dynamics simulations support the observed experimental data, giving insight in the underlying mechanism for the observed increase in deposition rate with bias voltage. Furthermore, a high atomic concentration of hydrogen has been determined in these films. Finally, Raman scattering analyses confirm that the Raman line observed at ∼1150 cm−1 cannot be attributed to trans-poly-acetylene, which continues to be reported in literature, reassigning it to a deformation mode of CHx bonds in NCD.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos 000308942100009 Publication Date 2012-09-04  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1862-6300; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor (up) 1.775 Times cited 31 Open Access  
  Notes M.E. and E.N. acknowledge financial support from, respectively, the Institute for Promotion of Innovation through Science and Technology in Flanders (IWT), and the Research Foundation-Flanders (FWO). J.V. gratefully acknowledges financial support from the GOA project “XANES meets ELNES” of the research fund of the University of Antwerp. Calculation support was provided by the University of Antwerp through the core facility CALCUA. G.V.T. acknowledges the ERC grant COUNTATOMS. The work was also financially supported by the joint UAUHasseltMethusalem “NANO” network, the Research Programs G.0068.07 and G.0555.10N of the Research Foundation-Flanders (FWO), the IAP-P6/42 project “Quantum Effects in Clusters and Nanowires”, and by the EU FP7 through the Integrated Infrastructure Initiative “ESMI” (No. 262348), the Marie Curie ITN “MATCON” (PITN-GA-2009-238201), and the Collaborative Project “DINAMO” (No. 245122). Approved Most recent IF: 1.775; 2012 IF: 1.469  
  Call Number UA @ lucian @ c:irua:101516UA @ admin @ c:irua:101516 Serial 1364  
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Author Van Gompel, M.; Atalay, A.Y.; Gaulke, A.; Van Bael, M.K.; D'Haen, J.; Turner, S.; Van Tendeloo, G.; Vanacken, J.; Moshchalkov, V.V.; Wagner, P. pdf  doi
openurl 
  Title Morphological TEM studies and magnetoresistance analysis of sputtered Al-substituted ZnO films : the role of oxygen Type A1 Journal article
  Year 2015 Publication Physica status solidi : A : applications and materials science Abbreviated Journal Phys Status Solidi A  
  Volume 212 Issue 212 Pages 1191-1201  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract In this article, we report on the synthesis of thin, epitaxial films of the transparent conductive oxide Al:ZnO on (0001)-oriented synthetic sapphire substrates by DC sputtering from targets with a nominal 1 at.% Al substitution. The deposition was carried out at an unusually low substrate temperature of only 250 °C in argonoxygen mixtures as well as in pure argon. The impact of the processgas composition on the morphology was analysed by transmission electron microscopy, revealing epitaxial growth in all the cases with a minor impact of the process parameters on the resulting grain sizes. The transport properties resistivity, Hall effect and magnetoresistance were studied in the range from 10 to 300 K in DC and pulsed magnetic fields up to 45 T. While the carrier density and mobility are widely temperature independent, we identified a low fieldlow temperature regime in which the magnetoresistance shows an anomalous, negative behaviour. At higher fields and temperatures, the magnetoresistance exhibits a more conventional, positive curvature with increasing field strength. As a possible explanation, we propose carrier scattering at localised magnetic trace impurities and magnetic correlations.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos 000356706500003 Publication Date 2015-04-21  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1862-6300; ISBN Additional Links UA library record; WoS full record  
  Impact Factor (up) 1.775 Times cited Open Access  
  Notes Methusalem project NANO; FWO; 246791 COUNTATOMS Approved Most recent IF: 1.775; 2015 IF: 1.616  
  Call Number c:irua:126732 Serial 2204  
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Author Vansweevelt, R.; Mortet, V.; D' Haen, J.; Ruttens, bart; van Haesendonck, C.; Partoens, B.; Peeters, F.M.; Wagner, P. doi  openurl
  Title Study on the giant positive magnetoresistance and Hall effect in ultrathin graphite flakes Type A1 Journal article
  Year 2011 Publication Physica status solidi : A : applications and materials science Abbreviated Journal Phys Status Solidi A  
  Volume 208 Issue 6 Pages 1252-1258  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract In this paper, we report on the electronic transport properties of mesoscopic, ultrathin graphite flakes with a thickness corresponding to a stack of 150 graphene layers. The graphite flakes show an unexpectedly strong positive magnetoresistance (PMR) already at room temperature, which scales in good approximation with the square of the magnetic field. Furthermore, we show that the resistivity is unaffected by magnetic fields oriented in plane with the graphene layers. Hall effect measurements indicate that the charge carriers are p-type and their concentration increases with increasing temperature while the mobility is decreasing. The Hall voltage is non-linear in higher magnetic fields. Possible origins of the observed effects are discussed. Ball and stick model of the two topmost carbon layers of the hexagonal graphite structure.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos 000292945800008 Publication Date 2011-02-24  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1862-6300; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor (up) 1.775 Times cited 8 Open Access  
  Notes ; The authors gratefully acknowledge the support by FWO – Research Foundation Flanders (project G.0159.07 “Structural and electronic properties of biologically modified, graphene-based layers”), by the Federal Belgian Interuniversity Attraction Poles Programme BELSPO (project TAP VI P6/42 “Quantum effects in clusters and nanowires”) and by the Methusalem network “NANO – Antwerp-Hasselt,” funded by the Flemish Community. Technical assistance by Stoffel D. Janssens (magnet calibration and software development), Dr. Hong Yin (AFM-based thickness studies), Dr. Ronald Thoelen (data analysis), and Prof. Hans-Gerd Boyen (XPS spectroscopy) is greatly appreciated. ; Approved Most recent IF: 1.775; 2011 IF: 1.463  
  Call Number UA @ lucian @ c:irua:91941 Serial 3343  
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Author Ekimov, E.A.; Kudryavtsev, O.S.; Turner, S.; Korneychuk, S.; Sirotinkin, V.P.; Dolenko, T.A.; Vervald, A.M.; Vlasov, I.I. pdf  doi
openurl 
  Title The effect of molecular structure of organic compound on the direct high-pressure synthesis of boron-doped nanodiamond: Effect of organic compound on synthesis of boron-doped nanodiamond Type A1 Journal article
  Year 2016 Publication Physica status solidi : A : applications and materials science Abbreviated Journal Phys Status Solidi A  
  Volume 213 Issue 213 Pages 2582-2589  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract Evolution of crystalline phases with temperature has been studied in materials produced by high-pressure high-temperature treatment of 9-borabicyclo[3.3.1]nonane dimer (9BBN), triphenylborane and trimesitylborane. The boron-doped diamond nanoparticles with a size below 10 nm were obtained at 8–9 GPa and temperatures 970–1250 °C from 9BBN only. Bridged structure and the presence of boron atom in the carbon cycle of 9BBN were revealed to be a key point for the direct synthesis of doped diamond nanocrystals. The diffusional transformation of the disordered carbon phase is suggested to be the main mechanism of the nanodiamond formation from 9BBN in the temperature range of 970–1400 °C. Aqueous suspensions of primary boron-doped diamond nanocrystals were prepared upon removal of non-diamond phases that opens wide opportunities for application of this new nanomaterial in electronics and biotechnologies.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos 000388321500006 Publication Date 2016-07-04  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1862-6300 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor (up) 1.775 Times cited 8 Open Access  
  Notes Approved Most recent IF: 1.775  
  Call Number EMAT @ emat @ c:irua:135175 Serial 4120  
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Author Jalabert, D.; Pelloux-Gervais, D.; Béché, A.; Hartmann, J.M.; Gergaud, P.; Rouvière, J.L.; Canut, B. doi  openurl
  Title Depth strain profile with sub-nm resolution in a thin silicon film using medium energy ion scattering Type A1 Journal article
  Year 2012 Publication Physica Status Solidi A-Applications And Materials Science Abbreviated Journal Phys Status Solidi A  
  Volume 209 Issue 2 Pages 265-267  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract The depth strain profile in silicon from the Si (001) substrate to the surface of a 2 nm thick Si/12 nm thick SiGe/bulk Si heterostructure has been determined by medium energy ion scattering (MEIS). It shows with sub-nanometer resolution and high strain sensitivity that the thin Si cap presents residual compressive strain caused by Ge diffusion coming from the fully strained SiGe layer underneath. The strain state of the SiGe buffer have been checked by X-ray diffraction (XRD) and nano-beam electron diffraction (NBED) measurements.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos 000303382700005 Publication Date 2011-11-11  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1862-6300; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor (up) 1.775 Times cited 3 Open Access  
  Notes Approved Most recent IF: 1.775; 2012 IF: 1.469  
  Call Number UA @ lucian @ c:irua:136430 Serial 4497  
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Author Garud, S.; Gampa, N.; Allen, T.G.; Kotipalli, R.; Flandre, D.; Batuk, M.; Hadermann, J.; Meuris, M.; Poortmans, J.; Smets, A.; Vermang, B. doi  openurl
  Title Surface passivation of CIGS solar cells using gallium oxide Type A1 Journal article
  Year 2018 Publication Physica status solidi : A : applications and materials science Abbreviated Journal Phys Status Solidi A  
  Volume 215 Issue 7 Pages 1700826  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract This work proposes gallium oxide grown by plasma-enhanced atomic layer deposition, as a surface passivation material at the CdS buffer interface of Cu(In,Ga)Se-2 (CIGS) solar cells. In preliminary experiments, a metal-insulator-semiconductor (MIS) structure is used to compare aluminium oxide, gallium oxide, and hafnium oxide as passivation layers at the CIGS-CdS interface. The findings suggest that gallium oxide on CIGS may show a density of positive charges and qualitatively, the least interface trap density. Subsequent solar cell results with an estimated 0.5nm passivation layer show an substantial absolute improvement of 56mV in open-circuit voltage (V-OC), 1mAcm(-2) in short-circuit current density (J(SC)), and 2.6% in overall efficiency as compared to a reference (with the reference showing 8.5% under AM 1.5G).  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos 000430128500015 Publication Date 2018-02-27  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1862-6300 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor (up) 1.775 Times cited 8 Open Access Not_Open_Access  
  Notes ; The work published in this paper was supported by the European Research Council (ERC) under the Union's Horizon 2020 research and innovation programme (grant agreement No 715027). The authors would also like to thank Dr. Marcel Simor (Solliance) for the CIGS layer fabrication and Prof. Johan Lauwaert (Universtiy of Ghent) for his guidance on DLTS measurements. ; Approved Most recent IF: 1.775  
  Call Number UA @ lucian @ c:irua:150761 Serial 4981  
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Author Sankaran, K.; Clima, S.; Mees, M.; Pourtois, G. url  doi
openurl 
  Title Exploring alternative metals to Cu and W for interconnects applications using automated first-principles simulations Type A1 Journal article
  Year 2015 Publication ECS journal of solid state science and technology Abbreviated Journal Ecs J Solid State Sc  
  Volume 4 Issue 4 Pages N3127-N3133  
  Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract The bulk properties of elementary metals and copper based binary alloys have been investigated using automated first-principles simulations to evaluate their potential to replace copper and tungsten as interconnecting wires in the coming CMOS technology nodes. The intrinsic properties of the screened candidates based on their cohesive energy and on their electronic properties have been used as a metrics to reflect their resistivity and their sensitivity to electromigration. Using these values, the 'performances' of the alloys have been benchmarked with respect to the Cu and W ones. It turns out that for some systems, alloying Cu with another element leads to a reduced tendency to electromigration. This is however done at the expense of a decrease of the conductivity of the alloy with respect to the bulk metal. (C) 2014 The Electrochemical Society. All rights reserved.  
  Address  
  Corporate Author Thesis  
  Publisher Electrochemical society Place of Publication Pennington (N.J.) Editor  
  Language Wos 000349547900018 Publication Date 2014-11-19  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 2162-8769;2162-8777; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor (up) 1.787 Times cited 19 Open Access  
  Notes Approved Most recent IF: 1.787; 2015 IF: 1.558  
  Call Number c:irua:125296 Serial 1150  
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