“The structure of different phases of pure C70 crystals”. Verheijen MA, Meekes H, Meijer G, Bennema P, de Boer JL, van Smaalen S, Van Tendeloo G, Amelinckx S, Muto S, van Landuyt J, Chemical physics 166, 287 (1992). http://doi.org/10.1016/0301-0104(92)87026-6
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.652
Times cited: 168
DOI: 10.1016/0301-0104(92)87026-6
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“The evolution of HVEM application in antwerp”. van Landuyt J, Ultramicroscopy
T2 –, 2nd Osaka International Symp.on High-Voltage Electron Microscopy : New Directions and Future Aspects of High Voltage Electron Microscopy, November 8-10, 1990, Osaka University, Osaka, Japan 39, 287 (1991). http://doi.org/10.1016/0304-3991(91)90208-N
Abstract: The evolution of the use of the 1250 keV high-voltage electron microscope in Antwerp is sketched by illustrating a non-exhaustive set of examples in various fields. One of the main present fields of application gets some more attention, i.e. the defect studies as produced by processing steps in microelectronic devices: (i) strain-induced dislocations at the edges of various device isolation interlayers, (ii) morphologies resulting from high-energy ion implantation creating buried layers for silicon on insulator (SOI) and other implantation technologies.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.436
DOI: 10.1016/0304-3991(91)90208-N
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“Characterization of LPE grown InGaAsP/InP heterostructures: IR-LED at 1.66 μm used for the remote monitoring of methane gas”. Volkov VV, van Landuyt J, Marushkin KM, Gijbels R, Férauge C, Vasilyev MG, Shelyakin AA, Sokolovsky AA, Journal of crystal growth 173, 285 (1997)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT); Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 1.751
Times cited: 4
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“Accurate infrared absorption measurement of interstitial and precipitated oxygen in p+ silicon wafers”. De Gryse O, Clauws P, Rossou L, van Landuyt J, Vanhellemont J, Microelectronic engineering 45, 277 (1999). http://doi.org/10.1016/S0167-9317(99)00180-X
Abstract: A novel infrared absorption method has been developed to measure [he interstitial oxygen concentration in highly doped silicon. Thin samples of the order of 10-30 mu m are prepared in an essentially stress-free state without changing the state of the crystal. The oxygen concentration is then determined by measuring the height of the 1136-cm(-1) absorption peak due to interstitial oxygen at 5.5 K. The obtained results on as-grown samples are compared with those from gas fusion analysis. The precipitated oxygen concentration in annealed samples is also determined with the new method. It will be shown that the interstitial oxygen concentration in highly doped silicon can be determined with high accuracy and down to concentrations of 10(17) cm(-3). (C) 1999 Elsevier Science B.V. All rights reserved.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 1.806
DOI: 10.1016/S0167-9317(99)00180-X
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“Electron-diffraction evidence for ordering of interstitial silver ions in silver bromide microcrystals”. Goessens C, Schryvers D, van Dyck D, van Landuyt J, de Keyzer R, Physica status solidi: A 143, 277 (1994). http://doi.org/10.1002/pssa.2211430211
Abstract: The occurrence and origin of diffuse intensity contours in electron micrographs of AgBr crystals are investigated. The observations are interpreted in terms of a model, which attributes diffuse scattering to the presence of predominant atom or vacancy clusters of a particular polyhedral type. It is shown that irrespective of the crystal morphology, interstitial Ag ions order in AgBr material in clusters of finite size along 001 type planes. A different geometry of the diffuse intensity locus observed for triangular and hexagonal tabular grains is explained in terms of the different twin plane morphology of these grains.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab
Times cited: 7
DOI: 10.1002/pssa.2211430211
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“Microstructural characterization of diamond films deposited on c-BN crystals”. Nistor L, Buschmann V, Ralchenko V, Dinca G, Vlasov I, van Landuyt J, Fuess H, Diamond and related materials
T2 –, 10th European Conference on Diamond, Diamond-Like Materials, Nitrides, and Silicon Carbide (Diamond 1999), SEP 12-17, 1999, PRAGUE, CZECH REPUBLIC 9, 269 (2000). http://doi.org/10.1016/S0925-9635(99)00246-0
Abstract: The morphology and structure of diamond films, deposited on cubic boron nitride (c-BN) crystals by microwave-plasma-enhanced chemical vapor deposition, is studied by high-resolution scanning electron microscopy and micro-Raman spectroscopy. The c-BN crystals, with sizes of 200 to 350 mu m and grown by a high-temperature/high-pressure technique, were embedded in a copper holder, and used as substrates in deposition runs of 15 min to 5 h. The nucleation centers for diamond appear as well-shaped cuboctahedral crystallites, having diameters of approximately 100 nm. With increasing deposition time the diamond crystallites grew larger, forming islands on the c-BN faces. In some cases, epitaxial growth was observed on the (111) c-BN faces where coalesced particles gave rise to very smooth regions. A number of diamond crystals with peculiar shapes are observed, such as a pseudo five-fold symmetry due to multiple twinning. Moreover, both randomly distributed carbon tubes, about 100 nn in diameter and 1 mu m in length, and spherically shaped features are observed in samples prepared under the typical conditions of diamond deposition, this effect being ascribed to the influence of plasma-sputtered copper contamination. Quite unusual diamond crystals with a deep, pyramidal-shaped hole in the middle grew on the copper substrate between the c-BN crystals. (C) 2000 Elsevier Science S.A. All rights reserved.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.561
Times cited: 9
DOI: 10.1016/S0925-9635(99)00246-0
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“Gallium colloid formation during ion implantation of glass”. Hole DE, Townsend PD, Barton JD, Nistor LC, van Landuyt J, Journal of non-crystalline solids 180, 266 (1995). http://doi.org/10.1016/0022-3093(94)00477-3
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.766
Times cited: 34
DOI: 10.1016/0022-3093(94)00477-3
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“On the interpretation of HREM images of partially ordered alloys”. De Meulenaere P, Van Tendeloo G, van Landuyt J, van Dyck D, Ultramicroscopy 60, 265 (1995). http://doi.org/10.1016/0304-3991(95)00065-9
Abstract: The ordering for 11/20 alloys has been studied by high-resolution electron microscopy (HREM). The distribution of the intensity maxima in the HREM image have been statistically examined, which provides a profound basis for the image interpretation. Processing of the HREM images allows ''dark-field'' images to be obtained, exhibiting a two-dimensional distribution of those columns which contain the most information in order to interpret the short-range order correlations. Pair correlations and higher cluster correlations between projected columns can be visualised, providing unique information about the ordering as retrieved from an experimental result without any other assumption. The method has been applied to Au4Cr and to Au4Mn to interpret the quenched short-range order state and the transition to long-range order.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab
Impact Factor: 2.436
Times cited: 20
DOI: 10.1016/0304-3991(95)00065-9
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“Electron microscopy study of twin sequences and branching in Ni66Al34 3r martensite”. Schryvers D, van Landuyt JT, Proceedings Of The International Conference On Martensitic Transformations (icomat-92) , 263 (1993)
Keywords: P1 Proceeding; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Times cited: 1
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“HREM image analysis up to structure determination of SbCrSe3: a new 1D ferromagnet”. Volkov VV, Van Tendeloo G, van Landuyt J, Amelinckx S, Busheva EE, Shabunina GG, Aminov TG, Novotortsev VM, Journal of solid state chemistry 132, 257 (1997)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.299
Times cited: 1
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“Crystalline structure of very hard tungsten carbide thin films obtained by reactive pulsed laser deposition”. Mihailescu IN, Gyorgy E, Marin G, Popescu M, Teodorescu VS, van Landuyt J, Grivas C, Hatziapostolou A, Journal of vacuum science and technology: A: vacuum surfaces and films 17, 249 (1999). http://doi.org/10.1116/1.581579
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.374
Times cited: 8
DOI: 10.1116/1.581579
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“Structural characterisation of erbium silicide thin films of an Si(111) substrate”. Frangis N, Van Tendeloo G, van Landuyt J, Muret P, Nguyen TTA, Journal of alloys and compounds 234, 244 (1996). http://doi.org/10.1016/0925-8388(95)02131-0
Abstract: ErSi2-x films (x = 0.1-0.3) grown by co-evaporation at different deposition ratios have been characterised by transmission electron microscopy, electron diffraction and high resolution electron microscopy. A very good epitaxial growth relation with the Si substrate was deduced for a1 samples and observed phases. Different defect modulated structures are formed; they can be described as structural variants (orthorhombic or rhombohedral) of the basic structure. The modulated phases are related to deviations from stoichiometry similar to crystallographic shear structures. The ErSi1.9 material contains Si precipitates, illustrating the preference for the ErSi1.7 composition to be maintained.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 2.999
Times cited: 14
DOI: 10.1016/0925-8388(95)02131-0
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“The reciprocal space of carbon tubes: a detailed interpretation of the electron diffraction effects”. Zhang XB, Zhang XF, Amelinckx S, Van Tendeloo G, van Landuyt J, Ultramicroscopy 54, 237 (1994). http://doi.org/10.1016/0304-3991(94)90123-6
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.436
Times cited: 59
DOI: 10.1016/0304-3991(94)90123-6
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“Electron microscopic and X-ray structural analysis of the layered crystals TaReSe4: structure, defect structure, and microstructure, including rotation twins”. Volkov VV, van Landuyt J, Amelinckx S, Pervov VS, Makhonina EV, Journal of solid state chemistry 135, 235 (1998). http://doi.org/10.1006/jssc.1997.7621
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.299
Times cited: 3
DOI: 10.1006/jssc.1997.7621
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“Microstructure of Mn-doped, spin-cast FeSi2”. Morimura T, Frangis N, Van Tendeloo G, van Landuyt J, Hasaka M, Hisatsune K, Journal of electron microscopy 46, 221 (1997)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 0.9
Times cited: 3
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“Computational comparisons between the conventional multislice method and the third-order multislice method for calculating high-energy electron diffraction and imaging”. Chen JH, van Dyck D, op de Beeck M, van Landuyt J, Ultramicroscopy 69, 219 (1997)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab
Impact Factor: 2.843
Times cited: 11
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“The formation of 3C-SiC in crystalline Si by carbon implantation at 9500C and annealing: a structural study”. Frangis N, Stoemenos J, van Landuyt J, Nejim A, Hemment PLF, Journal of crystal growth 181, 218 (1997)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.751
Times cited: 9
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“Colloid size distributions in ion implanted glass”. Nistor LC, van Landuyt J, Barton JD, Hole DE, Skelland ND, Townsend PD, Journal of non-crystalline solids 162, 217 (1993). http://doi.org/10.1016/0022-3093(93)91240-4
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.766
Times cited: 63
DOI: 10.1016/0022-3093(93)91240-4
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“Methods of structural analysis of modulated structures and quasicrystals”. van Landuyt J, Kuypers S, van Heurck C, Van Tendeloo G, Amelinckx S s.l., page 205 (1993).
Keywords: H3 Book chapter; Electron microscopy for materials research (EMAT)
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“Precipitation behavior in Cu-Co alloy”. Takeda M, Shinohara G, Yamada H, Yoshida S, van Landuyt J, Hashimoto H, , 205 (1998)
Keywords: P3 Proceeding; Electron microscopy for materials research (EMAT)
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“Electron microscopy of interfaces in new materials”. Van Tendeloo G, Goessens C, Schryvers D, van Haverbergh J, de Veirman A, van Landuyt J s.l., page 200 (1991).
Keywords: H3 Book chapter; Electron microscopy for materials research (EMAT)
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“A comparative investigation of replication techniques used for the study of (S+Au) sensitized AgBr microcrystals”. Buschmann V, Schryvers D, van Landuyt J, van Roost C, de Keyzer R, The journal of imaging science and technology 40, 189 (1996)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 0.349
Times cited: 4
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“Observation of vacancy clustering in Si crystals during in situ electron irradiation in a high voltage electron microscope”. Fedina L, van Landuyt J, Vanhellemont J, Aseev A, Materials Research Society symposium proceedings 404, 189 (1996)
Keywords: P1 Proceeding; Electron microscopy for materials research (EMAT)
Times cited: 1
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“Charcaterization by high-resolution transmission electron microscopy”. van Landuyt J, Van Tendeloo G Stt, Den Haag, page 187 (1998).
Keywords: H3 Book chapter; Electron microscopy for materials research (EMAT)
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“Electron microscopy and Rutherford backscattering spectrometry characterisation of 6H SiC samples implanted with He+”. Frangis N, van Landuyt J, Grimaldi MG, Calcagno L, Nuclear instruments and methods in physics research: B: beam interactions with materials and atoms
T2 –, Symposium 1 on New Trends in Ion Beam Processing of Materials, at the, E-MRS 96 Spring Meeting, June 04-07, 1996, Strasbourg, France 120, 186 (1996). http://doi.org/10.1016/S0168-583X(96)00506-X
Abstract: 6H SiC single crystals were implanted al room temperature with 1 MeV He+ up to a fluence of 2 x 10(17) at./cm(2) RBS-channeling analysis with a 2 MeV He+ beam indicated the formation of extended defects or the generation of point defects at a constant concentration over a depth of about 1 mu m. Electron microscopy characterisation revealed the presence of two amorphous buried layers at depths of about 1,75 and 4.8 mu m. They an due to the implantation and to the analysing RES beam, respectively, No extended planar or linear faults were found in the region between the surface and the first amorphous layer. However, at the surface, a 50 nm thick amorphous layer was observed in which crystalline inclusions were embedded. Electron diffraction and HREM data of the inclusions were typical for diamond, These inclusions were even found in the crystalline SiC material below this layer, however at a reduced density.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 1.124
Times cited: 2
DOI: 10.1016/S0168-583X(96)00506-X
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“Chemical and structural characterization of oxide precipitates in heavily boron doped silicon by infrared spectroscopy and transmission electron microscopy”. De Gryse O, Clauws P, Vanhellemont J, Lebedev O, van Landuyt J, Simoen E, Claeys C, , 183 (2002)
Abstract: Infrared absorption spectra of oxygen precipitates in boron doped silicon with a boron concentration between 10(17) and 10(19) cm(-3) are analyzed, applying the spectral function theory of the composite precipitates. The aspect ratio of the platelet precipitates has been determined by transmission electron microscopy measurements. Our analysis shows that in samples with moderate doping levels (<10(18) B cm(-3)) SiOgamma precipitates are formed with stoichiometry as in the lightly doped case. In the heavily (>10(18) cm(-3)) boron doped samples, however, the measured spectra of the precipitates are consistent with a mixture of SiO2 and B2O3. with a volume fraction of B2O3 as high as 0.41 in the most heavily doped case.
Keywords: P1 Proceeding; Electron microscopy for materials research (EMAT)
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“Growth of erbium-silicide films on (100) silicon as characterised by electron microscopy and diffraction”. Frangis N, van Landuyt J, Kaltsas G, Travlos A, Nassiopoulos AG, Journal of crystal growth 172, 175 (1997)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.751
Times cited: 29
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“Photoelectric and electrical responses of several erbium silicide/silicon interfaces”. Muret P, Nguyen TTA, Frangis N, Van Tendeloo G, van Landuyt J, Applied surface science
T2 –, International Symposium on Si Heterostructures –, From Physics to Devices, SEP 11-14, 1995, IRAKLION, GREECE 102, 173 (1996). http://doi.org/10.1016/0169-4332(96)00042-6
Abstract: In this work, photoelectric yield and electrical properties of several types of epitaxial erbium silicide on silicon Schottky diodes are studied, Different preparation conditions are used simultaneously on n- and p-Si(111) substrates for the 200 Angstrom thick silicide films. A last type of sample consists in 1.3 monolayer of epitaxial silicide with root 3 X root 3 superstructure on the Si substrate and covered by silver on the top. Photocurrent measurements are done as a function of photon energy at several temperatures. All these samples show barrier heights near 1 eV on p-type Si, even for the interface comprising only 1.3 monolayer of silicide whereas barrier heights on n-rype Si span the range from 0.28 to 0.67 eV for this last kind of sample, the sum of the barriers always exceeding the silicon band gap, These photoelectric results are confirmed by electrical characterisations, All these results show that the Fermi level is pinned 0.1 eV below the conduction band edge on p-type Si but shifts to various positions lower within the band gap on n-type Si. This fact leads to the hypothesis of a density of -7 interface states close to the charge change in the Si depletion zone from p- to n-type, namely 10(12) eV(-1) cm(-2). Although some inhomogeneities and defects at the interface are detected by electron microscopy for samples annealed at 750 degrees C, Fermi level position seems rather insensitive to the structural details of the interface while the silicide thickness plays a role on n-type Si.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.711
Times cited: 3
DOI: 10.1016/0169-4332(96)00042-6
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“Dynamical electron diffraction in substitutionally disordered column structures”. De Meulenaere P, van Dyck D, Van Tendeloo G, van Landuyt J, Ultramicroscopy 60, 171 (1995). http://doi.org/10.1016/0304-3991(95)00040-8
Abstract: For column structures, such as fee-based alloys viewed along the cube direction, the concept of electron channelling through the atom columns is more and more used to interpret the corresponding HREM images. In the case of(partially) disordered columns, the projected potential approach which is used in the channelling description must be questioned since the arrangement of the atoms along the beam direction might affect the exit wave of the electrons. In this paper, we critically inspect this top-bottom effect using multi-slice calculations. A modified channelling theory is introduced which turns out to be very appropriate for the interpretation of these results. For substitutionally disordered column structures, it is also discussed how to link the chemical composition of the material to statistical data of the HREM image. This results in a convenient tool to discern images taken at different thicknesses and focus values.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab
Impact Factor: 2.436
Times cited: 14
DOI: 10.1016/0304-3991(95)00040-8
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“The study of partially ordered 11/20 alloys by HREM”. De Meulenaere P, Van Tendeloo G, van Landuyt J, Microscopy research and technique 25, 169 (1993). http://doi.org/10.1002/jemt.1070250208
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.154
DOI: 10.1002/jemt.1070250208
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