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Author Verheijen, M.A.; Meekes, H.; Meijer, G.; Bennema, P.; de Boer, J.L.; van Smaalen, S.; Van Tendeloo, G.; Amelinckx, S.; Muto, S.; van Landuyt, J.
Title The structure of different phases of pure C70 crystals Type A1 Journal article
Year 1992 Publication Chemical physics Abbreviated Journal Chem Phys
Volume 166 Issue Pages (down) 287-297
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Amsterdam Editor
Language Wos A1992JQ46300026 Publication Date 2002-07-25
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0301-0104; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.652 Times cited 168 Open Access
Notes Approved PHYSICS, APPLIED 28/145 Q1 #
Call Number UA @ lucian @ c:irua:4104 Serial 3309
Permanent link to this record
 

 
Author van Landuyt, J.
Title The evolution of HVEM application in antwerp Type A1 Journal article
Year 1991 Publication Ultramicroscopy T2 – 2nd Osaka International Symp.on High-Voltage Electron Microscopy : New Directions and Future Aspects of High Voltage Electron Microscopy, November 8-10, 1990, Osaka University, Osaka, Japan Abbreviated Journal Ultramicroscopy
Volume 39 Issue 1-4 Pages (down) 287-298
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract The evolution of the use of the 1250 keV high-voltage electron microscope in Antwerp is sketched by illustrating a non-exhaustive set of examples in various fields. One of the main present fields of application gets some more attention, i.e. the defect studies as produced by processing steps in microelectronic devices: (i) strain-induced dislocations at the edges of various device isolation interlayers, (ii) morphologies resulting from high-energy ion implantation creating buried layers for silicon on insulator (SOI) and other implantation technologies.
Address
Corporate Author Thesis
Publisher Elsevier Place of Publication Amsterdam Editor
Language Wos A1991GY23100034 Publication Date 2002-10-18
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0304-3991; ISBN Additional Links UA library record; WoS full record
Impact Factor 2.436 Times cited Open Access
Notes Approved PHYSICS, APPLIED 47/145 Q2 #
Call Number UA @ lucian @ c:irua:95973 Serial 3579
Permanent link to this record
 

 
Author Volkov, V.V.; van Landuyt, J.; Marushkin, K.M.; Gijbels, R.; Férauge, C.; Vasilyev, M.G.; Shelyakin, A.A.; Sokolovsky, A.A.
Title Characterization of LPE grown InGaAsP/InP heterostructures: IR-LED at 1.66 μm used for the remote monitoring of methane gas Type A1 Journal article
Year 1997 Publication Journal of crystal growth Abbreviated Journal J Cryst Growth
Volume 173 Issue Pages (down) 285-296
Keywords A1 Journal article; Electron microscopy for materials research (EMAT); Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Amsterdam Editor
Language Wos A1997XC98100008 Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0022-0248 ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.751 Times cited 4 Open Access
Notes Approved Most recent IF: 1.751; 1997 IF: 1.259
Call Number UA @ lucian @ c:irua:20459 Serial 324
Permanent link to this record
 

 
Author De Gryse, O.; Clauws, P.; Rossou, L.; van Landuyt, J.; Vanhellemont, J.
Title Accurate infrared absorption measurement of interstitial and precipitated oxygen in p+ silicon wafers Type A1 Journal article
Year 1999 Publication Microelectronic engineering Abbreviated Journal Microelectron Eng
Volume 45 Issue 2-3 Pages (down) 277-282
Keywords A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Abstract A novel infrared absorption method has been developed to measure [he interstitial oxygen concentration in highly doped silicon. Thin samples of the order of 10-30 mu m are prepared in an essentially stress-free state without changing the state of the crystal. The oxygen concentration is then determined by measuring the height of the 1136-cm(-1) absorption peak due to interstitial oxygen at 5.5 K. The obtained results on as-grown samples are compared with those from gas fusion analysis. The precipitated oxygen concentration in annealed samples is also determined with the new method. It will be shown that the interstitial oxygen concentration in highly doped silicon can be determined with high accuracy and down to concentrations of 10(17) cm(-3). (C) 1999 Elsevier Science B.V. All rights reserved.
Address
Corporate Author Thesis
Publisher Place of Publication Amsterdam Editor
Language Wos 000081748600023 Publication Date 2002-07-25
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0167-9317; ISBN Additional Links UA library record; WoS full record
Impact Factor 1.806 Times cited Open Access
Notes Fwo-G.0051.97; Fwo-G.00117.86 Approved Most recent IF: 1.806; 1999 IF: 0.815
Call Number UA @ lucian @ c:irua:95791 Serial 47
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Author Goessens, C.; Schryvers, D.; van Dyck, D.; van Landuyt, J.; de Keyzer, R.
Title Electron-diffraction evidence for ordering of interstitial silver ions in silver bromide microcrystals Type A1 Journal article
Year 1994 Publication Physica status solidi: A Abbreviated Journal
Volume 143 Issue 2 Pages (down) 277-287
Keywords A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab
Abstract The occurrence and origin of diffuse intensity contours in electron micrographs of AgBr crystals are investigated. The observations are interpreted in terms of a model, which attributes diffuse scattering to the presence of predominant atom or vacancy clusters of a particular polyhedral type. It is shown that irrespective of the crystal morphology, interstitial Ag ions order in AgBr material in clusters of finite size along 001 type planes. A different geometry of the diffuse intensity locus observed for triangular and hexagonal tabular grains is explained in terms of the different twin plane morphology of these grains.
Address
Corporate Author Thesis
Publisher Place of Publication Berlin Editor
Language Wos A1994NW15300010 Publication Date 2007-01-12
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0031-8965;1521-396X; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor Times cited 7 Open Access
Notes Approved no
Call Number UA @ lucian @ c:irua:99870 Serial 919
Permanent link to this record
 

 
Author Nistor, L.; Buschmann, V.; Ralchenko, V.; Dinca, G.; Vlasov, I.; van Landuyt, J.; Fuess, H.
Title Microstructural characterization of diamond films deposited on c-BN crystals Type A1 Journal article
Year 2000 Publication Diamond and related materials T2 – 10th European Conference on Diamond, Diamond-Like Materials, Nitrides, and Silicon Carbide (Diamond 1999), SEP 12-17, 1999, PRAGUE, CZECH REPUBLIC Abbreviated Journal Diam Relat Mater
Volume 9 Issue 3-6 Pages (down) 269-273
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract The morphology and structure of diamond films, deposited on cubic boron nitride (c-BN) crystals by microwave-plasma-enhanced chemical vapor deposition, is studied by high-resolution scanning electron microscopy and micro-Raman spectroscopy. The c-BN crystals, with sizes of 200 to 350 mu m and grown by a high-temperature/high-pressure technique, were embedded in a copper holder, and used as substrates in deposition runs of 15 min to 5 h. The nucleation centers for diamond appear as well-shaped cuboctahedral crystallites, having diameters of approximately 100 nm. With increasing deposition time the diamond crystallites grew larger, forming islands on the c-BN faces. In some cases, epitaxial growth was observed on the (111) c-BN faces where coalesced particles gave rise to very smooth regions. A number of diamond crystals with peculiar shapes are observed, such as a pseudo five-fold symmetry due to multiple twinning. Moreover, both randomly distributed carbon tubes, about 100 nn in diameter and 1 mu m in length, and spherically shaped features are observed in samples prepared under the typical conditions of diamond deposition, this effect being ascribed to the influence of plasma-sputtered copper contamination. Quite unusual diamond crystals with a deep, pyramidal-shaped hole in the middle grew on the copper substrate between the c-BN crystals. (C) 2000 Elsevier Science S.A. All rights reserved.
Address
Corporate Author Thesis
Publisher Place of Publication Amsterdam Editor
Language Wos 000087382400009 Publication Date 2002-07-26
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0925-9635; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 2.561 Times cited 9 Open Access
Notes Approved Most recent IF: 2.561; 2000 IF: 1.591
Call Number UA @ lucian @ c:irua:102877 Serial 2041
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Author Hole, D.E.; Townsend, P.D.; Barton, J.D.; Nistor, L.C.; van Landuyt, J.
Title Gallium colloid formation during ion implantation of glass Type A1 Journal article
Year 1995 Publication Journal of non-crystalline solids Abbreviated Journal J Non-Cryst Solids
Volume 180 Issue Pages (down) 266-274
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Amsterdam Editor
Language Wos A1995QB59400018 Publication Date 2002-07-25
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0022-3093; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.766 Times cited 34 Open Access
Notes Approved PHYSICS, APPLIED 28/145 Q1 #
Call Number UA @ lucian @ c:irua:13288 Serial 1313
Permanent link to this record
 

 
Author De Meulenaere, P.; Van Tendeloo, G.; van Landuyt, J.; van Dyck, D.
Title On the interpretation of HREM images of partially ordered alloys Type A1 Journal article
Year 1995 Publication Ultramicroscopy Abbreviated Journal Ultramicroscopy
Volume 60 Issue 2 Pages (down) 265-282
Keywords A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab
Abstract The ordering for 11/20 alloys has been studied by high-resolution electron microscopy (HREM). The distribution of the intensity maxima in the HREM image have been statistically examined, which provides a profound basis for the image interpretation. Processing of the HREM images allows ''dark-field'' images to be obtained, exhibiting a two-dimensional distribution of those columns which contain the most information in order to interpret the short-range order correlations. Pair correlations and higher cluster correlations between projected columns can be visualised, providing unique information about the ordering as retrieved from an experimental result without any other assumption. The method has been applied to Au4Cr and to Au4Mn to interpret the quenched short-range order state and the transition to long-range order.
Address
Corporate Author Thesis
Publisher Place of Publication Amsterdam Editor
Language Wos A1995TZ14700008 Publication Date 2002-07-25
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0304-3991; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 2.436 Times cited 20 Open Access
Notes Approved no
Call Number UA @ lucian @ c:irua:13014 Serial 2438
Permanent link to this record
 

 
Author Schryvers, D.; van Landuyt, J.T.
Title Electron microscopy study of twin sequences and branching in Ni66Al34 3r martensite Type P1 Proceeding
Year 1993 Publication Proceedings Of The International Conference On Martensitic Transformations (icomat-92) Abbreviated Journal
Volume Issue Pages (down) 263-268
Keywords P1 Proceeding; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos A1993BD05K00039 Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor Times cited 1 Open Access
Notes Approved no
Call Number UA @ lucian @ c:irua:104492 Serial 975
Permanent link to this record
 

 
Author Volkov, V.V.; Van Tendeloo, G.; van Landuyt, J.; Amelinckx, S.; Busheva, E.E.; Shabunina, G.G.; Aminov, T.G.; Novotortsev, V.M.
Title HREM image analysis up to structure determination of SbCrSe3: a new 1D ferromagnet Type A1 Journal article
Year 1997 Publication Journal of solid state chemistry Abbreviated Journal J Solid State Chem
Volume 132 Issue Pages (down) 257-266
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication London Editor
Language Wos A1997YE01700005 Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0022-4596 ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 2.299 Times cited 1 Open Access
Notes Approved Most recent IF: 2.299; 1997 IF: 1.486
Call Number UA @ lucian @ c:irua:21421 Serial 1500
Permanent link to this record
 

 
Author Mihailescu, I.N.; Gyorgy, E.; Marin, G.; Popescu, M.; Teodorescu, V.S.; van Landuyt, J.; Grivas, C.; Hatziapostolou, A.
Title Crystalline structure of very hard tungsten carbide thin films obtained by reactive pulsed laser deposition Type A1 Journal article
Year 1999 Publication Journal of vacuum science and technology: A: vacuum surfaces and films Abbreviated Journal J Vac Sci Technol A
Volume 17 Issue 1 Pages (down) 249-255
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication New York, N.Y. Editor
Language Wos 000078136300038 Publication Date 2002-07-27
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0734-2101; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.374 Times cited 8 Open Access
Notes Approved Most recent IF: 1.374; 1999 IF: 1.742
Call Number UA @ lucian @ c:irua:29689 Serial 581
Permanent link to this record
 

 
Author Frangis, N.; Van Tendeloo, G.; van Landuyt, J.; Muret, P.; Nguyen, T.T.A.
Title Structural characterisation of erbium silicide thin films of an Si(111) substrate Type A1 Journal article
Year 1996 Publication Journal of alloys and compounds Abbreviated Journal J Alloy Compd
Volume 234 Issue 2 Pages (down) 244-250
Keywords A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Abstract ErSi2-x films (x = 0.1-0.3) grown by co-evaporation at different deposition ratios have been characterised by transmission electron microscopy, electron diffraction and high resolution electron microscopy. A very good epitaxial growth relation with the Si substrate was deduced for a1 samples and observed phases. Different defect modulated structures are formed; they can be described as structural variants (orthorhombic or rhombohedral) of the basic structure. The modulated phases are related to deviations from stoichiometry similar to crystallographic shear structures. The ErSi1.9 material contains Si precipitates, illustrating the preference for the ErSi1.7 composition to be maintained.
Address
Corporate Author Thesis
Publisher Place of Publication Amsterdam Editor
Language Wos A1996TX65100020 Publication Date 2002-07-26
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0925-8388; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 2.999 Times cited 14 Open Access
Notes Approved
Call Number UA @ lucian @ c:irua:15451 Serial 3213
Permanent link to this record
 

 
Author Zhang, X.B.; Zhang, X.F.; Amelinckx, S.; Van Tendeloo, G.; van Landuyt, J.
Title The reciprocal space of carbon tubes: a detailed interpretation of the electron diffraction effects Type A1 Journal article
Year 1994 Publication Ultramicroscopy Abbreviated Journal Ultramicroscopy
Volume 54 Issue Pages (down) 237-249
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Amsterdam Editor
Language Wos A1994PA59800016 Publication Date 2002-10-18
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0304-3991; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 2.436 Times cited 59 Open Access
Notes Approved
Call Number UA @ lucian @ c:irua:10006 Serial 2844
Permanent link to this record
 

 
Author Volkov, V.V.; van Landuyt, J.; Amelinckx, S.; Pervov, V.S.; Makhonina, E.V.
Title Electron microscopic and X-ray structural analysis of the layered crystals TaReSe4: structure, defect structure, and microstructure, including rotation twins Type A1 Journal article
Year 1998 Publication Journal of solid state chemistry Abbreviated Journal J Solid State Chem
Volume 135 Issue Pages (down) 235-255
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication London Editor
Language Wos 000072900200008 Publication Date 2002-10-07
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0022-4596; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 2.299 Times cited 3 Open Access
Notes Approved Most recent IF: 2.299; 1998 IF: 1.432
Call Number UA @ lucian @ c:irua:29672 Serial 938
Permanent link to this record
 

 
Author Morimura, T.; Frangis, N.; Van Tendeloo, G.; van Landuyt, J.; Hasaka, M.; Hisatsune, K.
Title Microstructure of Mn-doped, spin-cast FeSi2 Type A1 Journal article
Year 1997 Publication Journal of electron microscopy Abbreviated Journal Microscopy-Jpn
Volume 46 Issue 3 Pages (down) 221-225
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Tokyo Editor
Language Wos A1997XP43400004 Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0022-0744; 1477-9986 ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 0.9 Times cited 3 Open Access
Notes Approved Most recent IF: NA
Call Number UA @ lucian @ c:irua:21410 Serial 2070
Permanent link to this record
 

 
Author Chen, J.H.; van Dyck, D.; op de Beeck, M.; van Landuyt, J.
Title Computational comparisons between the conventional multislice method and the third-order multislice method for calculating high-energy electron diffraction and imaging Type A1 Journal article
Year 1997 Publication Ultramicroscopy Abbreviated Journal Ultramicroscopy
Volume 69 Issue Pages (down) 219-240
Keywords A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Amsterdam Editor
Language Wos A1997YG59500001 Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0304-3991 ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 2.843 Times cited 11 Open Access
Notes Approved Most recent IF: 2.843; 1997 IF: 1.600
Call Number UA @ lucian @ c:irua:21416 Serial 455
Permanent link to this record
 

 
Author Frangis, N.; Stoemenos, J.; van Landuyt, J.; Nejim, A.; Hemment, P.L.F.
Title The formation of 3C-SiC in crystalline Si by carbon implantation at 9500C and annealing: a structural study Type A1 Journal article
Year 1997 Publication Journal of crystal growth Abbreviated Journal J Cryst Growth
Volume 181 Issue Pages (down) 218-228
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Amsterdam Editor
Language Wos A1997YD52700007 Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0022-0248 ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.751 Times cited 9 Open Access
Notes Approved Most recent IF: 1.751; 1997 IF: 1.259
Call Number UA @ lucian @ c:irua:21415 Serial 1253
Permanent link to this record
 

 
Author Nistor, L.C.; van Landuyt, J.; Barton, J.D.; Hole, D.E.; Skelland, N.D.; Townsend, P.D.
Title Colloid size distributions in ion implanted glass Type A1 Journal article
Year 1993 Publication Journal of non-crystalline solids Abbreviated Journal J Non-Cryst Solids
Volume 162 Issue Pages (down) 217-224
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Amsterdam Editor
Language Wos A1993LY37100002 Publication Date 2003-06-21
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0022-3093; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.766 Times cited 63 Open Access
Notes Approved INSTRUMENTS & INSTRUMENTATION 31/56 Q3 # NUCLEAR SCIENCE & TECHNOLOGY 9/32 Q2 # PHYSICS, PARTICLES & FIELDS 24/28 Q4 # SPECTROSCOPY 28/43 Q3 #
Call Number UA @ lucian @ c:irua:6787 Serial 389
Permanent link to this record
 

 
Author van Landuyt, J.; Kuypers, S.; van Heurck, C.; Van Tendeloo, G.; Amelinckx, S.
Title Methods of structural analysis of modulated structures and quasicrystals Type H3 Book chapter
Year 1993 Publication Abbreviated Journal
Volume Issue Pages (down) 205-224
Keywords H3 Book chapter; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication s.l. Editor
Language Wos Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Additional Links UA library record
Impact Factor Times cited Open Access
Notes Approved no
Call Number UA @ lucian @ c:irua:6781 Serial 2018
Permanent link to this record
 

 
Author Takeda, M.; Shinohara, G.; Yamada, H.; Yoshida, S.; van Landuyt, J.; Hashimoto, H.
Title Precipitation behavior in Cu-Co alloy Type P3 Proceeding
Year 1998 Publication Abbreviated Journal
Volume Issue Pages (down) 205-206
Keywords P3 Proceeding; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Kyoto Editor
Language Wos Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Additional Links UA library record
Impact Factor Times cited Open Access
Notes Approved Most recent IF: NA
Call Number UA @ lucian @ c:irua:29682 Serial 2689
Permanent link to this record
 

 
Author Van Tendeloo, G.; Goessens, C.; Schryvers, D.; van Haverbergh, J.; de Veirman, A.; van Landuyt, J.
Title Electron microscopy of interfaces in new materials Type H3 Book chapter
Year 1991 Publication Abbreviated Journal
Volume Issue Pages (down) 200-209
Keywords H3 Book chapter; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication s.l. Editor
Language Wos Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Additional Links UA library record
Impact Factor Times cited Open Access
Notes Approved no
Call Number UA @ lucian @ c:irua:48353 Serial 962
Permanent link to this record
 

 
Author Buschmann, V.; Schryvers, D.; van Landuyt, J.; van Roost, C.; de Keyzer, R.
Title A comparative investigation of replication techniques used for the study of (S+Au) sensitized AgBr microcrystals Type A1 Journal article
Year 1996 Publication The journal of imaging science and technology Abbreviated Journal J Imaging Sci Techn
Volume 40 Issue Pages (down) 189-201
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Springfield, Va Editor
Language Wos A1996VL09200003 Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1062-3701 ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 0.349 Times cited 4 Open Access
Notes Approved MATERIALS SCIENCE, MULTIDISCIPLINARY 135/271 Q2 # PHYSICS, APPLIED 70/145 Q2 # PHYSICS, CONDENSED MATTER 40/67 Q3 #
Call Number UA @ lucian @ c:irua:15428 Serial 418
Permanent link to this record
 

 
Author Fedina, L.; van Landuyt, J.; Vanhellemont, J.; Aseev, A.
Title Observation of vacancy clustering in Si crystals during in situ electron irradiation in a high voltage electron microscope Type P1 Proceeding
Year 1996 Publication Materials Research Society symposium proceedings Abbreviated Journal
Volume 404 Issue Pages (down) 189-194
Keywords P1 Proceeding; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Wuhan Editor
Language Wos A1996BG19E00025 Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0272-9172 ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor Times cited 1 Open Access
Notes Approved no
Call Number UA @ lucian @ c:irua:15457 Serial 2424
Permanent link to this record
 

 
Author van Landuyt, J.; Van Tendeloo, G.
Title Charcaterization by high-resolution transmission electron microscopy Type H3 Book chapter
Year 1998 Publication Abbreviated Journal
Volume Issue Pages (down) 187-190
Keywords H3 Book chapter; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Stt Place of Publication Den Haag Editor
Language Wos A1990DC39700012 Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Additional Links UA library record; WoS full record;
Impact Factor Times cited Open Access
Notes Approved Most recent IF: NA
Call Number UA @ lucian @ c:irua:29685 Serial 335
Permanent link to this record
 

 
Author Frangis, N.; van Landuyt, J.; Grimaldi, M.G.; Calcagno, L.
Title Electron microscopy and Rutherford backscattering spectrometry characterisation of 6H SiC samples implanted with He+ Type A1 Journal article
Year 1996 Publication Nuclear instruments and methods in physics research: B: beam interactions with materials and atoms T2 – Symposium 1 on New Trends in Ion Beam Processing of Materials, at the, E-MRS 96 Spring Meeting, June 04-07, 1996, Strasbourg, France Abbreviated Journal Nucl Instrum Meth B
Volume 120 Issue 1-4 Pages (down) 186-189
Keywords A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Abstract 6H SiC single crystals were implanted al room temperature with 1 MeV He+ up to a fluence of 2 x 10(17) at./cm(2) RBS-channeling analysis with a 2 MeV He+ beam indicated the formation of extended defects or the generation of point defects at a constant concentration over a depth of about 1 mu m. Electron microscopy characterisation revealed the presence of two amorphous buried layers at depths of about 1,75 and 4.8 mu m. They an due to the implantation and to the analysing RES beam, respectively, No extended planar or linear faults were found in the region between the surface and the first amorphous layer. However, at the surface, a 50 nm thick amorphous layer was observed in which crystalline inclusions were embedded. Electron diffraction and HREM data of the inclusions were typical for diamond, These inclusions were even found in the crystalline SiC material below this layer, however at a reduced density.
Address
Corporate Author Thesis
Publisher Elsevier Place of Publication Amsterdam Editor
Language Wos A1996VZ24500040 Publication Date 2002-07-26
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0168-583X; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.124 Times cited 2 Open Access
Notes Approved no
Call Number UA @ lucian @ c:irua:95882 Serial 947
Permanent link to this record
 

 
Author De Gryse, O.; Clauws, P.; Vanhellemont, J.; Lebedev, O.; van Landuyt, J.; Simoen, E.; Claeys, C.
Title Chemical and structural characterization of oxide precipitates in heavily boron doped silicon by infrared spectroscopy and transmission electron microscopy Type P1 Proceeding
Year 2002 Publication Abbreviated Journal
Volume Issue Pages (down) 183-194
Keywords P1 Proceeding; Electron microscopy for materials research (EMAT)
Abstract Infrared absorption spectra of oxygen precipitates in boron doped silicon with a boron concentration between 10(17) and 10(19) cm(-3) are analyzed, applying the spectral function theory of the composite precipitates. The aspect ratio of the platelet precipitates has been determined by transmission electron microscopy measurements. Our analysis shows that in samples with moderate doping levels (<10(18) B cm(-3)) SiOgamma precipitates are formed with stoichiometry as in the lightly doped case. In the heavily (>10(18) cm(-3)) boron doped samples, however, the measured spectra of the precipitates are consistent with a mixture of SiO2 and B2O3. with a volume fraction of B2O3 as high as 0.41 in the most heavily doped case.
Address
Corporate Author Thesis
Publisher Place of Publication S.l. Editor
Language Wos Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1-56677-344-X ISBN Additional Links UA library record; WoS full record;
Impact Factor Times cited Open Access
Notes Approved Most recent IF: NA
Call Number UA @ lucian @ c:irua:94950 Serial 344
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Author Frangis, N.; van Landuyt, J.; Kaltsas, G.; Travlos, A.; Nassiopoulos, A.G.
Title Growth of erbium-silicide films on (100) silicon as characterised by electron microscopy and diffraction Type A1 Journal article
Year 1997 Publication Journal of crystal growth Abbreviated Journal J Cryst Growth
Volume 172 Issue Pages (down) 175-182
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Amsterdam Editor
Language Wos A1997WL48900024 Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0022-0248 ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.751 Times cited 29 Open Access
Notes Approved Most recent IF: 1.751; 1997 IF: 1.259
Call Number UA @ lucian @ c:irua:21402 Serial 1394
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Author Muret, P.; Nguyen, T.T.A.; Frangis, N.; Van Tendeloo, G.; van Landuyt, J.
Title Photoelectric and electrical responses of several erbium silicide/silicon interfaces Type A1 Journal article
Year 1996 Publication Applied surface science T2 – International Symposium on Si Heterostructures – From Physics to Devices, SEP 11-14, 1995, IRAKLION, GREECE Abbreviated Journal Appl Surf Sci
Volume 102 Issue Pages (down) 173-177
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract In this work, photoelectric yield and electrical properties of several types of epitaxial erbium silicide on silicon Schottky diodes are studied, Different preparation conditions are used simultaneously on n- and p-Si(111) substrates for the 200 Angstrom thick silicide films. A last type of sample consists in 1.3 monolayer of epitaxial silicide with root 3 X root 3 superstructure on the Si substrate and covered by silver on the top. Photocurrent measurements are done as a function of photon energy at several temperatures. All these samples show barrier heights near 1 eV on p-type Si, even for the interface comprising only 1.3 monolayer of silicide whereas barrier heights on n-rype Si span the range from 0.28 to 0.67 eV for this last kind of sample, the sum of the barriers always exceeding the silicon band gap, These photoelectric results are confirmed by electrical characterisations, All these results show that the Fermi level is pinned 0.1 eV below the conduction band edge on p-type Si but shifts to various positions lower within the band gap on n-type Si. This fact leads to the hypothesis of a density of -7 interface states close to the charge change in the Si depletion zone from p- to n-type, namely 10(12) eV(-1) cm(-2). Although some inhomogeneities and defects at the interface are detected by electron microscopy for samples annealed at 750 degrees C, Fermi level position seems rather insensitive to the structural details of the interface while the silicide thickness plays a role on n-type Si.
Address
Corporate Author Thesis
Publisher Place of Publication Amsterdam Editor
Language Wos A1996VJ86100039 Publication Date 2003-05-12
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0169-4332; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 2.711 Times cited 3 Open Access
Notes Approved no
Call Number UA @ lucian @ c:irua:104392 Serial 2611
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Author De Meulenaere, P.; van Dyck, D.; Van Tendeloo, G.; van Landuyt, J.
Title Dynamical electron diffraction in substitutionally disordered column structures Type A1 Journal article
Year 1995 Publication Ultramicroscopy Abbreviated Journal Ultramicroscopy
Volume 60 Issue 1 Pages (down) 171-185
Keywords A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab
Abstract For column structures, such as fee-based alloys viewed along the cube direction, the concept of electron channelling through the atom columns is more and more used to interpret the corresponding HREM images. In the case of(partially) disordered columns, the projected potential approach which is used in the channelling description must be questioned since the arrangement of the atoms along the beam direction might affect the exit wave of the electrons. In this paper, we critically inspect this top-bottom effect using multi-slice calculations. A modified channelling theory is introduced which turns out to be very appropriate for the interpretation of these results. For substitutionally disordered column structures, it is also discussed how to link the chemical composition of the material to statistical data of the HREM image. This results in a convenient tool to discern images taken at different thicknesses and focus values.
Address
Corporate Author Thesis
Publisher Place of Publication Amsterdam Editor
Language Wos A1995TG59500017 Publication Date 2002-07-25
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0304-3991; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 2.436 Times cited 14 Open Access
Notes Approved no
Call Number UA @ lucian @ c:irua:13013 Serial 770
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Author De Meulenaere, P.; Van Tendeloo, G.; van Landuyt, J.
Title The study of partially ordered 11/20 alloys by HREM Type A1 Journal article
Year 1993 Publication Microscopy research and technique Abbreviated Journal Microsc Res Techniq
Volume 25 Issue Pages (down) 169-170
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication New York, N.Y. Editor
Language Wos A1993LB60700007 Publication Date 2005-02-23
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1059-910X;1097-0029; ISBN Additional Links UA library record; WoS full record
Impact Factor 1.154 Times cited Open Access
Notes Approved PHYSICS, APPLIED 28/145 Q1 #
Call Number UA @ lucian @ c:irua:6785 Serial 3331
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