Number of records found: 251
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Citations
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Adsorption of H2O, NH3, CO, NO2, and NO on graphene: a first-principles study”. Leenaerts O, Partoens B, Peeters FM, Physical review : B : condensed matter and materials physics 77, 125416 (2008). http://doi.org/10.1103/PhysRevB.77.125416
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Strain-induced band gaps in bilayer graphene”. Verberck B, Partoens B, Peeters FM, Trauzettel B, Physical review : B : condensed matter and materials physics 85, 125403 (2012). http://doi.org/10.1103/PhysRevB.85.125403
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Decoupled DFT-1/2 method for defect excitation energies”. Claes J, Partoens B, Lamoen D, Physical Review B 108, 125306 (2023). http://doi.org/10.1103/PhysRevB.108.125306
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Excitons in coupled InAs/InP self-assembled quantum wires”. Sidor Y, Partoens B, Peeters FM, Ben T, Ponce A, Sales DL, Molina SI, Fuster D, González L, González Y, Physical review : B : condensed matter and materials physics 75, 125120 (2007). http://doi.org/10.1103/PhysRevB.75.125120
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Two distinctive regimes in the charge transport of a magnetic topological ultra thin film”. Sabzalipour A, Mir M, Zarenia M, Partoens B, New Journal Of Physics 22, 123004 (2020). http://doi.org/10.1088/1367-2630/ABC989
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Phonons in Ge nanowires”. Peelaers H, Partoens B, Peeters FM, Applied physics letters 95, 122110 (2009). http://doi.org/10.1063/1.3236526
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Wigner crystallization in transition metal dichalcogenides : a new approach to correlation energy”. Zarenia M, Neilson D, Partoens B, Peeters FM, Physical review B 95, 115438 (2017). http://doi.org/10.1103/PHYSREVB.95.115438
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Stacking order dependent electric field tuning of the band gap in graphene multilayers”. Avetisyan AA, Partoens B, Peeters FM, Physical review : B : condensed matter and materials physics 81, 115432 (2010). http://doi.org/10.1103/PhysRevB.81.115432
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Transmission in graphene-topological insulator heterostructures”. De Beule C, Zarenia M, Partoens B, Physical review B 95, 115424 (2017). http://doi.org/10.1103/PHYSREVB.95.115424
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Positron surface state as a spectroscopic probe for characterizing surfaces of topological insulator materials”. Callewaert V, Shastry K, Saniz R, Makkonen I, Barbiellini B, Assaf BA, Heiman D, Moodera JS, Partoens B, Bansil A, Weiss AH;, Physical review B 94, 115411 (2016). http://doi.org/10.1103/PHYSREVB.94.115411
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Dielectric mismatch effect on shallow impurity states in a semiconductor nanowire”. Li B, Slachmuylders AF, Partoens B, Magnus W, Peeters FM, Physical review : B : condensed matter and materials physics 77, 115335 (2008). http://doi.org/10.1103/PhysRevB.77.115335
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Stable kagome lattices from group IV elements”. Leenaerts O, Schoeters B, Partoens B, Physical review : B : condensed matter and materials physics 91, 115202 (2015). http://doi.org/10.1103/PhysRevB.91.115202
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Gapless interface states at the junction between two topological insulators”. De Beule C, Partoens B, Physical review : B : condensed matter and materials physics 87, 115113 (2013). http://doi.org/10.1103/PhysRevB.87.115113
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First-principles study of defects at Σ3 grain boundaries in CuGaSe2”. Saniz R, Bekaert J, Partoens B, Lamoen D, Solid State Communications , 114263 (2021). http://doi.org/10.1016/j.ssc.2021.114263
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Electronic and dynamical properties of Si/Ge core-shell nanowires”. Peelaers H, Partoens B, Peeters FM, Physical review : B : condensed matter and materials physics 82, 113411 (2010). http://doi.org/10.1103/PhysRevB.82.113411
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The ageing effect in topological insulators : evolution of the surface electronic structure of Bi2Se3 upon K adsorption”. Park K, De Beule C, Partoens B, New journal of physics 15, 113031 (2013). http://doi.org/10.1088/1367-2630/15/11/113031
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Diffusion of interacting particles in discrete geometries”. Becker T, Nelissen K, Cleuren B, Partoens B, van den Broeck C, Physical review letters 111, 110601 (2013). http://doi.org/10.1103/PhysRevLett.111.110601
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Spin-orbit-mediated manipulation of heavy-hole spin qubits in gated semiconductor nanodevices”. Szumniak P, Bednarek S, Partoens B, Peeters FM, Physical review letters 109, 107201 (2012). http://doi.org/10.1103/PhysRevLett.109.107201
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Ab-initio study of the segregation and electronic properties of neutral and charged B and P dopants in Si and Si/SiO2 nanowires”. Schoeters B, Leenaerts O, Pourtois G, Partoens B, Journal of applied physics 118, 104306 (2015). http://doi.org/10.1063/1.4930048
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Electronic and optical properties of core-shell nanowires in a magnetic field”. Ravi Kishore VV, Partoens B, Peeters FM, Journal of physics : condensed matter 26, 095501 (2014). http://doi.org/10.1088/0953-8984/26/9/095501
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Ab initio study of hydrogenic effective mass impurities in Si nanowires”. Peelaers H, Durgun E, Partoens B, Bilc DI, Ghosez P, Van de Walle CG, Peeters FM, Journal of physics : condensed matter 29, 095303 (2017). http://doi.org/10.1088/1361-648X/AA5768
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Evolution of multigap superconductivity in the atomically thin limit : strain-enhanced three-gap superconductivity in monolayer MgB2”. Bekaert J, Aperis A, Partoens B, Oppeneer PM, Milošević, MV, Physical review B 96, 094510 (2017). http://doi.org/10.1103/PHYSREVB.96.094510
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HRTF measurement by means of unsupervised head movements with respect to a single fixed speaker”. Reijniers J, Partoens B, Steckel J, Peremans H, Ieee Access 8, 92287 (2020). http://doi.org/10.1109/ACCESS.2020.2994932
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First-principles study of the optoelectronic properties and photovoltaic absorber layer efficiency of Cu-based chalcogenides”. Sarmadian N, Saniz R, Partoens B, Lamoen D, Journal of applied physics 120, 085707 (2016). http://doi.org/10.1063/1.4961562
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Substrate-induced chiral states in graphene”. Zarenia M, Leenaerts O, Partoens B, Peeters FM, Physical review : B : condensed matter and materials physics 86, 085451 (2012). http://doi.org/10.1103/PhysRevB.86.085451
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Adsorption and absorption of boron, nitrogen, aluminum, and phosphorus on silicene : stability and electronic and phonon properties”. Sivek J, Sahin H, Partoens B, Peeters FM, Physical review : B : condensed matter and materials physics 87, 085444 (2013). http://doi.org/10.1103/PhysRevB.87.085444
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Quantitative modeling of secondary electron emission from slow-ion bombardment on semiconductors”. Bercx M, Partoens B, Lamoen D, Physical review B 99, 085413 (2019). http://doi.org/10.1103/PhysRevB.99.085413
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Dielectric mismatch effect on coupled shallow impurity states in a semiconductor nanowire”. Li B, Partoens B, Peeters FM, Magnus W, Physical review : B : solid state 79, 085306 (2009). http://doi.org/10.1103/PhysRevB.79.085306
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Application of the weighted-density approximation to the accurate description of electron-positron correlation effects in materials”. Callewaert V, Saniz R, Barbiellini B, Bansil A, Partoens B, Physical review B 96, 085135 (2017). http://doi.org/10.1103/PhysRevB.96.085135
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Electric field tuning of the band gap in four layers of graphene with different stacking order”. Avetisyan AA, Partoens B, Peeters FM, Proceedings of the Society of Photo-optical Instrumentation Engineers T2 –, Conference on Photonics and Micro and Nano-structured Materials, JUN 28-30, 2011, Yerevan, ARMENIA , 84140 (2012). http://doi.org/10.1117/12.923618
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