“Controlled growth of hexagonal gold nanostructures during thermally induced self-assembling on Ge(001) surface”. Jany BR, Gauquelin N, Willhammar T, Nikiel M, van den Bos KHW, Janas A, Szajna K, Verbeeck J, Van Aert S, Van Tendeloo G, Krok F, Scientific reports 7, 42420 (2017). http://doi.org/10.1038/srep42420
Abstract: Nano-sized gold has become an important material in various fields of science and technology, where control over the size and crystallography is desired to tailor the functionality. Gold crystallizes in the face-centered cubic (fcc) phase, and its hexagonal closed packed (hcp) structure is a very unusual and rare phase. Stable Au hcp phase has been reported to form in nanoparticles at the tips of some Ge nanowires. It has also recently been synthesized in the form of thin graphene-supported sheets which are unstable under electron beam irradiation. Here, we show that stable hcp Au 3D nanostructures with well-defined crystallographic orientation and size can be systematically created in a process of thermally induced self-assembly of thin Au layer on Ge(001) monocrystal. The Au hcp crystallite is present in each Au nanostructure and has been characterized by different electron microscopy techniques. We report that a careful heat treatment above the eutectic melting temperature and a controlled cooling is required to form the hcp phase of Au on a Ge single crystal. This new method gives scientific prospects to obtain stable Au hcp phase for future applications in a rather simple manner as well as redefine the phase diagram of Gold with Germanium.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 4.259
Times cited: 25
DOI: 10.1038/srep42420
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“Unusual structural rearrangement and superconductivity in infinite layer cuprate superlattices”. Samal D, Gauquelin N, Takamura Y, Lobato I, Arenholz E, Van Aert S, Huijben M, Zhong Z, Verbeeck J, Van Tendeloo G, Koster G, Physical review materials 7, 054803 (2023). http://doi.org/10.1103/PhysRevMaterials.7.054803
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.4
DOI: 10.1103/PhysRevMaterials.7.054803
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“Inhomogeneous superconductivity and quasilinear magnetoresistance at amorphous LaTiO₃/SrTiO₃, interfaces”. Lebedev N, Stehno M, Rana A, Gauquelin N, Verbeeck J, Brinkman A, Aarts J, Journal Of Physics-Condensed Matter 33, 055001 (2020). http://doi.org/10.1088/1361-648X/ABC102
Abstract: We have studied the transport properties of LaTiO3/SrTiO3 (LTO/STO) heterostructures. In spite of 2D growth observed in reflection high energy electron diffraction, transmission electron microscopy images revealed that the samples tend to amorphize. Still, we observe that the structures are conducting, and some of them exhibit high conductance and/or superconductivity. We established that conductivity arises mainly on the STO side of the interface, and shows all the signs of the two-dimensional electron gas usually observed at interfaces between STO and LTO or LaAlO3, including the presence of two electron bands and tunability with a gate voltage. Analysis of magnetoresistance (MR) and superconductivity indicates the presence of spatial fluctuations of the electronic properties in our samples. That can explain the observed quasilinear out-of-plane MR, as well as various features of the in-plane MR and the observed superconductivity.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.7
Times cited: 1
DOI: 10.1088/1361-648X/ABC102
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“Atomic-scale identification of novel planar defect phases in heteroepitaxial YBa2Cu3O7-\delta thin films”. Gauquelin N, Zhang H, Zhu G, Wei JYT, Botton GA, AIP advances 8, 055022 (2018). http://doi.org/10.1063/1.5011761
Abstract: We have discovered two novel types of planar defects that appear in heteroepitaxial YBa2Cu3O7-delta(YBCO123) thin films, grown by pulsed-laser deposition (PLD) either with or without a La2/3Ca1/3MnO3 (LCMO) overlayer, using the combination of highangle annular dark-field scanning transmission electron microscopy (HAADF-STEM) imaging and electron energy loss spectroscopy (EELS) mapping for unambiguous identification. These planar lattice defects are based on the intergrowth of either a BaO plane between two CuO chains or multiple Y-O layers between two CuO2 planes, resulting in non-stoichiometric layer sequences that could directly impact the high-Tc superconductivity. (C) 2018 Author(s).
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 1.568
Times cited: 1
DOI: 10.1063/1.5011761
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“Formation of a conducting LaAlO3/SrTiO3 interface studied by low-energy electron reflection during growth”. van der Torren AJH, Liao Z, Xu C, Gauquelin N, Yin C, Aarts J, van der Molen SJ, Physical Review Materials 1, 075001 (2017). http://doi.org/10.1103/PhysRevMaterials.1.075001
Abstract: The two-dimensional electron gas occurring between the band insulators SrTiO 3 and LaAlO 3 continues to attract considerable interest, due to the possibility of dynamic control over the carrier density, and the ensuing phenomena such as magnetism and superconductivity. The formation of this conducting interface is sensitive to the growth conditions, but despite numerous investigations, there are still questions about the details of the physics involved. In particular, not much is known about the electronic structure of the growing LaAlO 3 layer at the growth temperature (around 800 ◦ C) in oxygen (pressure around 5 × 10 −5 mbar), since analysis techniques at these conditions are not readily available. We developed a pulsed laser deposition system inside a low-energy electron microscope in order to study this issue. The setup allows for layer-by-layer growth control and in-situ measurements of the angle-dependent electron reflection intensity, which can be used as a fingerprint of the electronic structure of the surface layers during growth. By using different substrate terminations and growth conditions we observe two families of reflectivity maps, which we can connect either to samples with an AlO 2 -rich surface and a conducting interface; or to samples with a LaO-rich surface and an insulating interface. Our observations emphasize that substrate termination and stoichiometry determine the electronic structure of the growing layer, and thereby the conductance of the interface.
Keywords: A1 Journal Article; Electron Microscopy for Materials Science (EMAT) ;
Times cited: 2
DOI: 10.1103/PhysRevMaterials.1.075001
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“Resistance minimum in LaAlO3/Eu1-xLaxTiO3/SrTiO3 heterostructures”. Lebedev N, Huang Y, Rana A, Jannis D, Gauquelin N, Verbeeck J, Aarts J, Physical review materials 6, 075003 (2022). http://doi.org/10.1103/PHYSREVMATERIALS.6.075003
Abstract: In this paper we study LaAlO3/Eu1-xLaxTiO3/SrTiO3 structures with nominally x = 0, 0.1 and different thicknesses of the Eu1-xLaxTiO3 layer. We observe that both systems have many properties similar to previously studied LaAlO3/EuTiO3/SrTiO3 and other oxide interfaces, such as the formation of a two-dimensional electron liquid for two unit cells of Eu1-xLaxTiO3; a metal-insulator transition driven by the increase in thickness of the Eu1-xLaxTiO3 layer; the presence of an anomalous Hall effect when driving the systems above the Lifshitz point with a back-gate voltage; and a minimum in the temperature dependence of the sheet resistance below the Lifshitz point in the one-band regime, which becomes more pronounced with increasing negative gate voltage. However, and notwithstanding the likely presence of magnetism in the system, we do not attribute that minimum to the Kondo effect, but rather to the properties of the SrTiO3 crystal and the inevitable effects of charge trapping when using back gates.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.4
DOI: 10.1103/PHYSREVMATERIALS.6.075003
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“Germanium vacancy centre formation in CVD nanocrystalline diamond using a solid dopant source”. Mary Joy R, Pobedinskas P, Bourgeois E, Chakraborty T, Görlitz J, Herrmann D, Noël C, Heupel J, Jannis D, Gauquelin N, D'Haen J, Verbeeck J, Popov C, Houssiau L, Becher C, Nesládek M, Haenen K, Science talks 5, 100157 (2023). http://doi.org/10.1016/j.sctalk.2023.100157
Keywords: A3 Journal article; Electron microscopy for materials research (EMAT)
DOI: 10.1016/j.sctalk.2023.100157
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“Electrical Polarization in AlN/GaN Nanodisks Measured by Momentum-Resolved 4D Scanning Transmission Electron Microscopy”. Müller-Caspary K, Grieb T, Müßener J, Gauquelin N, Hille P, Schörmann J, Verbeeck J, Van Aert S, Eickhoff M, Rosenauer A, Physical review letters 122, 106102 (2019). http://doi.org/10.1103/PhysRevLett.122.106102
Abstract: We report the mapping of polarization-induced internal electric fields in AlN/GaN nanowire heterostructures at unit cell resolution as a key for the correlation of optical and structural phenomena in semiconductor optoelectronics. Momentum-resolved aberration-corrected scanning transmission electron microscopy is employed as a new imaging mode that simultaneously provides four-dimensional data in real and reciprocal space. We demonstrate how internal mesoscale and atomic electric fields can be separated in an experiment, which is verified by comprehensive dynamical simulations of multiple electron scattering. A mean difference of 5.3 +- 1.5 MV/cm is found for the polarization-induced electric fields in AlN and GaN, being in accordance with dedicated simulations and photoluminescence measurements in previous publications.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 8.462
Times cited: 26
DOI: 10.1103/PhysRevLett.122.106102
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“Atom column detection from simultaneously acquired ABF and ADF STEM images”. Fatermans J, den Dekker Aj, Müller-Caspary K, Gauquelin N, Verbeeck J, Van Aert S, Ultramicroscopy 219, 113046 (2020). http://doi.org/10.1016/j.ultramic.2020.113046
Abstract: In electron microscopy, the maximum a posteriori (MAP) probability rule has been introduced as a tool to determine the most probable atomic structure from high-resolution annular dark-field (ADF) scanning transmission electron microscopy (STEM) images exhibiting low contrast-to-noise ratio (CNR). Besides ADF imaging, STEM can also be applied in the annular bright-field (ABF) regime. The ABF STEM mode allows to directly visualize light-element atomic columns in the presence of heavy columns. Typically, light-element nanomaterials are sensitive to the electron beam, limiting the incoming electron dose in order to avoid beam damage and leading to images exhibiting low CNR. Therefore, it is of interest to apply the MAP probability rule not only to ADF STEM images, but to ABF STEM images as well. In this work, the methodology of the MAP rule, which combines statistical parameter estimation theory and model-order selection, is extended to be applied to simultaneously acquired ABF and ADF STEM images. For this, an extension of the commonly used parametric models in STEM is proposed. Hereby, the effect of specimen tilt has been taken into account, since small tilts from the crystal zone axis affect, especially, ABF STEM intensities. Using simulations as well as experimental data, it is shown that the proposed methodology can be successfully used to detect light elements in the presence of heavy elements.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab
Impact Factor: 2.2
Times cited: 9
DOI: 10.1016/j.ultramic.2020.113046
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“Two-dimensional electron systems in perovskite oxide heterostructures : role of the polarity-induced substitutional defects”. Lin S-C, Kuo C-T, Shao Y-C, Chuang Y-D, Geessinck J, Huijben M, Rueff J-P, Graff IL, Conti G, Peng Y, Bostwick A, Gullikson E, Nemsak S, Vailionis A, Gauquelin N, Verbeeck J, Ghiringhelli G, Schneider CM, Fadley CS, Physical review materials 4, 115002 (2020). http://doi.org/10.1103/PHYSREVMATERIALS.4.115002
Abstract: The discovery of a two-dimensional electron system (2DES) at the interfaces of perovskite oxides such as LaAlO3 and SrTiO3 has motivated enormous efforts in engineering interfacial functionalities with this type of oxide heterostructures. However, the fundamental origins of the 2DES are still not understood, e.g., the microscopic mechanisms of coexisting interface conductivity and magnetism. Here we report a comprehensive spectroscopic investigation on the depth profile of 2DES-relevant Ti 3d interface carriers using depthand element-specific techniques like standing-wave excited photoemission and resonant inelastic scattering. We found that one type of Ti 3d interface carriers, which give rise to the 2DES are located within three unit cells from the n-type interface in the SrTiO3 layer. Unexpectedly, another type of interface carriers, which are polarity-induced Ti-on-Al antisite defects, reside in the first three unit cells of the opposing LaAlO3 layer (similar to 10 angstrom). Our findings provide a microscopic picture of how the localized and mobile Ti 3d interface carriers distribute across the interface and suggest that the 2DES and 2D magnetism at the LaAlO3/SrTiO3 interface have disparate explanations as originating from different types of interface carriers.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.4
Times cited: 7
DOI: 10.1103/PHYSREVMATERIALS.4.115002
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“Novel class of nanostructured metallic glass films with superior and tunable mechanical properties”. Ghidelli M, Orekhov A, Bassi AL, Terraneo G, Djemia P, Abadias G, Nord M, Béché, A, Gauquelin N, Verbeeck J, Raskin J-p, Schryvers D, Pardoen T, Idrissi H, Acta Materialia , 116955 (2021). http://doi.org/10.1016/j.actamat.2021.116955
Abstract: A novel class of nanostructured Zr50Cu50 (%at.) metallic glass films with superior and tunable mechanical
properties is produced by pulsed laser deposition. The process can be controlled to synthetize a wide
range of film microstructures including dense fully amorphous, amorphous embedded with nanocrystals
and amorphous nano-granular. A unique dense self-assembled nano-laminated atomic arrangement
characterized by alternating Cu-rich and Zr/O-rich nanolayers with different local chemical enrichment
and amorphous or amorphous-crystalline composite nanostructure has been discovered, while
significant in-plane clustering is reported for films synthetized at high deposition pressures. This unique
nanoarchitecture is at the basis of superior mechanical properties including large hardness and elastic
modulus up to 10 and 140 GPa, respectively and outstanding total elongation to failure (>9%), leading to
excellent strength/ductility balance, which can be tuned by playing with the film architecture. These
results pave the way to the synthesis of novel class of engineered nanostructured metallic glass films
with high structural performances attractive for a number of applications in microelectronics and
coating industry.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 5.301
Times cited: 27
DOI: 10.1016/j.actamat.2021.116955
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“On the formation mechanisms of intragranular shear bands in olivine by stress-induced amorphization”. Idrissi H, Béché, A, Gauquelin N, Ul-Haq I, Bollinger C, Demouchy S, Verbeeck J, Pardoen T, Schryvers D, Cordier P, Acta materialia 239, 118247 (2022). http://doi.org/10.1016/J.ACTAMAT.2022.118247
Abstract: Intragranular amorphization shear lamellae are found in deformed olivine aggregates. The detailed trans-mission electron microscopy analysis of intragranular lamella arrested in the core of a grain provides novel information on the amorphization mechanism. The deformation field is complex and heteroge-neous, corresponding to a shear crack type instability involving mode I, II and III loading components. The formation and propagation of the amorphous lamella is accompanied by the formation of crystal defects ahead of the tip. These defects are geometrically necessary [001] dislocations, characteristics of high-stress deformation in olivine, and rotational nanodomains which are tentatively interpreted as disclinations. We show that these defects play an important role in dictating the path followed by the amorphous lamella. Stress-induced amorphization in olivine would thus result from a direct crystal-to -amorphous transformation associated with a shear instability and not from a mechanical destabilization due to the accumulation of high number of defects from an intense preliminary deformation. The pref-erential alignment of some lamellae along (010) is a proof of the lower ultimate mechanical strength of these planes.(c) 2022 The Authors. Published by Elsevier Ltd on behalf of Acta Materialia Inc. This is an open access article under the CC BY license ( http://creativecommons.org/licenses/by/4.0/ )
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 9.4
Times cited: 5
DOI: 10.1016/J.ACTAMAT.2022.118247
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“The effect of microstructure and film composition on the mechanical properties of linear antenna CVD diamond thin films”. Mary Joy R, Pobedinskas P, Baule N, Bai S, Jannis D, Gauquelin N, Pinault-Thaury M-A, Jomard F, Sankaran KJ, Rouzbahani R, Lloret F, Desta D, D’Haen J, Verbeeck J, Becker MF, Haenen K, Acta materialia 264, 119548 (2024). http://doi.org/10.1016/j.actamat.2023.119548
Abstract: This study reports the impact of film microstructure and composition on the Young’s modulus and residual stress in nanocrystalline diamond (NCD) thin films ( thick) grown on silicon substrates using a linear antenna microwave plasma-enhanced chemical vapor deposition (CVD) system. Combining laser acoustic wave spectroscopy to determine the elastic properties with simple wafer curvature measurements, a straightforward method to determine the intrinsic stress in NCD films is presented. Two deposition parameters are varied: (1) the substrate temperature from 400 °C to 900 °C, and (2) the [P]/[C] ratio from 0 ppm to 8090 ppm in the H2/CH4/CO2/PH3 diamond CVD plasma. The introduction of PH3 induces a transition in the morphology of the diamond film, shifting from NCD with larger grains to ultra-NCD with a smaller grain size, concurrently resulting in a decrease in Young’s modulus. Results show that the highest Young’s modulus of (113050) GPa for the undoped NCD deposited at 800 °C is comparable to single crystal diamond, indicating that NCD with excellent mechanical properties is achievable with our process for thin diamond films. Based on the film stress results, we propose the origins of tensile intrinsic stress in the diamond films. In NCD, the tensile intrinsic stress is attributed to larger grain size, while in ultra-NCD films the tensile intrinsic stress is due to grain boundaries and impurities.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 9.4
DOI: 10.1016/j.actamat.2023.119548
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“Coupling Charge and Topological Reconstructions at Polar Oxide Interfaces”. van Thiel T c, Brzezicki W, Autieri C, Hortensius J r, Afanasiev D, Gauquelin N, Jannis D, Janssen N, Groenendijk D j, Fatermans J, Van Aert S, Verbeeck J, Cuoco M, Caviglia A d, Physical Review Letters 127, 127202 (2021). http://doi.org/10.1103/PhysRevLett.127.127202
Abstract: In oxide heterostructures, different materials are integrated into a single artificial crystal, resulting in a breaking of inversion symmetry across the heterointerfaces. A notable example is the interface between polar and nonpolar materials, where valence discontinuities lead to otherwise inaccessible charge and spin states. This approach paved the way for the discovery of numerous unconventional properties absent in the bulk constituents. However, control of the geometric structure of the electronic wave functions in correlated oxides remains an open challenge. Here, we create heterostructures consisting of ultrathin SrRuO3, an itinerant ferromagnet hosting momentum-space sources of Berry curvature, and
LaAlO3, a polar wide-band-gap insulator. Transmission electron microscopy reveals an atomically sharp LaO/RuO2/SrO interface configuration, leading to excess charge being pinned near the LaAlO3/SrRuO3 interface. We demonstrate through magneto-optical characterization, theoretical calculations and transport measurements that the real-space charge reconstruction drives a reorganization of the topological charges in the band structure, thereby modifying the momentum-space Berry curvature in SrRuO3. Our results illustrate how the topological and magnetic features of oxides can be manipulated by engineering charge discontinuities at oxide interfaces.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 8.462
Times cited: 17
DOI: 10.1103/PhysRevLett.127.127202
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“Metal-insulator transition of SrVO 3 ultrathin films embedded in SrVO 3 / SrTiO 3 superlattices”. Wang J, Gauquelin N, Huijben M, Verbeeck J, Rijnders G, Koster G, Applied Physics Letters 117, 133105 (2020). http://doi.org/10.1063/5.0020615
Abstract: The metal-insulator transition (MIT) in strongly correlated oxides is a topic of great interest for its potential applications, such as Mott field effect transistors and sensors. We report that the MIT in high quality epitaxial SrVO3 (SVO) thin films is present as the film thickness is reduced, lowering the dimensionality of the system, and electron-electron correlations start to become the dominant interactions. The critical thickness of 3 u.c is achieved by avoiding effects due to off-stoichiometry using optimal growth conditions and excluding any surface effects by a STO capping layer. Compared to the single SVO thin films, conductivity enhancement in SVO/STO superlattices is observed. This can be explained by the interlayer coupling effect between SVO sublayers in the superlattices. Magnetoresistance and Hall measurements indicate that the dominant driving force of MIT is the electron–electron interaction.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 4
Times cited: 8
DOI: 10.1063/5.0020615
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“Dynamics of multishell vortex structures in mesoscopic superconducting Corbino disks”. Lin NS, Misko VR, Peeters FM, Physical review : B : condensed matter and materials physics 81, 134504 (2010). http://doi.org/10.1103/PhysRevB.81.134504
Abstract: We study the dynamics of vortex shells in mesoscopic superconducting Corbino disks, where vortices form shells as recently observed in micrometer-sized Nb disks. Due to the interplay between the vortex-vortex interaction, the gradient Lorentz force and the (in)commensurability between the numbers of vortices in shells, the process of angular melting of vortex-shell configurations becomes complex. Angular melting can start either from the center of the disk (where the shear stress is maximum) or from its boundary (where the shear stress is minimum) depending on the specific vortex configuration. Furthermore, we found that two kinds of defects can exist in such vortex-shell structures: intrashell and intershell defects. An intrashell defect may lead to an inverse dynamic behavior, i.e., one of the vortex shells under a stronger driving force can rotate slower than the adjacent shell that is driven by a weaker Lorentz force. An intershell defect always locks more than two shells until the gradient of the Lorentz force becomes large enough to break the rigid-body rotation of the locked shells. Such a lock-unlock process leads to hysteresis in the angular velocities of the shells.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 11
DOI: 10.1103/PhysRevB.81.134504
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“Rectification of vortex motion in a circular ratchet channel”. Lin NS, Heitmann TW, Yu K, Plourde BLT, Misko VR, Physical review : B : condensed matter and materials physics 84, 144511 (2011). http://doi.org/10.1103/PhysRevB.84.144511
Abstract: We study the dynamics of vortices in an asymmetric (i.e., consisting of triangular cells) ring channel driven by an external ac current I in a Corbino setup. The asymmetric potential rectifies the motion of vortices and induces a net vortex flow without any unbiased external drive, i.e., the ratchet effect. We show that the net flow of vortices strongly depends on vortex density and frequency of the driving current. Depending on the density, we distinguish a single-vortex rectification regime (for low density, when each vortex is rectified individually) determined by the potential-energy landscape inside each cell of the channel (i.e., hard and easy directions) and multi-vortex, or collective, rectification (high-density case) when the inter-vortex interaction becomes important. We analyze the average angular velocity ω of vortices as a function of I and study commensurability effects between the numbers of vortices and cells in the channel and the role of frequency of the applied ac current. We have shown that the commensurability effect results in a stepwise ω-I curve. Besides the integer steps, i.e., the large steps found in the single-vortex case, we also found fractional steps corresponding to fractional ratios between the numbers of vortices and triangular cells. We have performed preliminary measurements on a device containing a single weak-pinning circular ratchet channel in a Corbino geometry and observed a substantial asymmetric vortex response.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 27
DOI: 10.1103/PhysRevB.84.144511
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“Functionalization of graphitic carbon nitride systems by cobalt and cobalt-iron oxides boosts solar water oxidation performances”. Benedet M, Andrea Rizzi G, Gasparotto A, Gauquelin N, Orekhov A, Verbeeck J, Maccato C, Barreca D, Applied surface science 618, 156652 (2023). http://doi.org/10.1016/j.apsusc.2023.156652
Abstract: The ever-increasing energy demand from the world population has made the intensive use of fossil fuels an overarching threat to global environment and human health. An appealing alternative is offered by sunlight-assisted photoelectrochemical water splitting to yield carbon-free hydrogen fuel, but kinetic limitations associated to the oxygen evolution reaction (OER) render the development of cost-effective, eco-friendly and stable electrocatalysts an imperative issue. In the present work, OER catalysts based on graphitic carbon nitride (g-C3N4) were deposited on conducting glass substrates by a simple decantation procedure, followed by functionalization with low amounts of nanostructured CoO and CoFe2O4 by radio frequency (RF)-sputtering, and final annealing under inert atmosphere. A combination of advanced characterization tools was used to investigate the interplay between material features and electrochemical performances. The obtained results highlighted the formation of a p-n junction for the g-C3N4-CoO system, whereas a Z-scheme junction accounted for the remarkable performance enhancement yielded by g-C3N4-CoFe2O4. The intimate contact between the system components also afforded an improved electrocatalyst stability in comparison to various bare and functionalized g-C3N4-based systems. These findings emphasize the importance of tailoring g-C3N4 chemico-physical properties through the dispersion of complementary catalysts to fully exploit its applicative potential.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 6.7
Times cited: 11
DOI: 10.1016/j.apsusc.2023.156652
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“Etching induced formation of interfacial FeMn in IrMn/CoFe bilayers”. O'Donnell D, Hassan S, Du Y, Gauquelin N, Krishnan D, Verbeeck J, Fan R, Steadman P, Bencok P, Dobrynin AN, Journal of physics: D: applied physics 52, 165002 (2019). http://doi.org/10.1088/1361-6463/AB03BD
Abstract: The effect of ion etching on exchange bias in IrMn3/Co70Fe30 bilayers is investigated. In spite of the reduction of saturation magnetization caused by the embedding of Tr from the capping layer into the Co70Fe30 layer during the etching process, the exchange bias in samples with the same thickness of the Co70Fe30 layer is reducing in proportion to the etching power. X-ray magnetic circular dichroism measurements revealed the emergence of an uncompensated Mn magnetization after etching, which is antiferromagnetically coupled to the ferromagnetic layer. This suggests etching induced formation of small interfacial FeMn regions which leads to the decrease of effective exchange coupling between ferromagnetic and antiferromagnetic layers.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.588
DOI: 10.1088/1361-6463/AB03BD
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“Unconventional vortex dynamics in mesoscopic superconducting corbino disks”. Lin NS, Misko VR, Peeters FM, Physical review letters 102, 197003 (2009). http://doi.org/10.1103/PhysRevLett.102.197003
Abstract: The discrete shell structure of vortex matter strongly influences the flux dynamics in mesoscopic superconducting Corbino disks. While the dynamical behavior is well understood in large and in very small disks, in the intermediate-size regime it occurs to be much more complex and unusual, due to (in)commensurability between the vortex shells. We demonstrate unconventional vortex dynamics (inversion of shell velocities with respect to the gradient driving force) and angular melting (propagating from the boundary where the shear stress is minimum, towards the center) in mesoscopic Corbino disks.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 8.462
Times cited: 18
DOI: 10.1103/PhysRevLett.102.197003
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“Depth-resolved resonant inelastic x-ray scattering at a superconductor/half-metallic-ferromagnet interface through standing wave excitation”. Kuo C-T, Lin S-C, Ghiringhelli G, Peng Y, De Luca GM, Di Castro D, Betto D, Gehlmann M, Wijnands T, Huijben M, Meyer-Ilse J, Gullikson E, Kortright JB, Vailionis A, Gauquelin N, Verbeeck J, Gerber T, Balestrino G, Brookes NB, Braicovich L, Fadley CS, Physical review B 98, 235146 (2018). http://doi.org/10.1103/PHYSREVB.98.235146
Abstract: We demonstrate that combining standing wave (SW) excitation with resonant inelastic x-ray scattering (RIXS) can lead to depth resolution and interface sensitivity for studying orbital and magnetic excitations in correlated oxide heterostructures. SW-RIXS has been applied to multilayer heterostructures consisting of a superconductor La1.85Sr0.15CuO4 (LSCO) and a half-metallic ferromagnet La0.67Sr0.33MnO3 (LSMO). Easily observable SW effects on the RIXS excitations were found in these LSCO/LSMO multilayers. In addition, we observe different depth distribution of the RIXS excitations. The magnetic excitations are found to arise from the LSCO/LSMO interfaces, and there is also a suggestion that one of the dd excitations comes from the interfaces. SW-RIXS measurements of correlated-oxide and other multilayer heterostructures should provide unique layer-resolved insights concerning their orbital and magnetic excitations, as well as a challenge for RIXS theory to specifically deal with interface effects.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.836
Times cited: 5
DOI: 10.1103/PHYSREVB.98.235146
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“Spin-orbit semimetal SrIrO3 in the two-dimensional limit”. Groenendijk DJ, Autieri C, Girovsky J, Martinez-Velarte MC, Manca N, Mattoni G, Monteiro AMRVL, Gauquelin N, Verbeeck J, Otte AF, Gabay M, Picozzi S, Caviglia AD, Physical review letters 119, 256403 (2017). http://doi.org/10.1103/PHYSREVLETT.119.256403
Abstract: <script type='text/javascript'>document.write(unpmarked('We investigate the thickness-dependent electronic properties of ultrathin SrIrO3 and discover a transition from a semimetallic to a correlated insulating state below 4 unit cells. Low-temperature magnetoconductance measurements show that spin fluctuations in the semimetallic state are significantly enhanced while approaching the transition point. The electronic properties are further studied by scanning tunneling spectroscopy, showing that 4 unit cell SrIrO(3)d is on the verge of a gap opening. Our density functional theory calculations reproduce the critical thickness of the transition and show that the opening of a gap in ultrathin SrIrO3 requires antiferromagnetic order.'));
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 8.462
Times cited: 79
DOI: 10.1103/PHYSREVLETT.119.256403
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“Interplay of strain and indium incorporation in InGaN/GaN dot-in-a-wire nanostructures by scanning transmission electron microscopy”. Woo SY, Gauquelin N, Nguyen HPT, Mi Z, Botton GA, Nanotechnology 26, 344002 (2015). http://doi.org/10.1088/0957-4484/26/34/344002
Abstract: The interplay between strain and composition is at the basis of heterostructure design to engineer new properties. The influence of the strain distribution on the incorporation of indium during the formation of multiple InGaN/GaN quantum dots (QDs) in nanowire (NW) heterostructures has been investigated, using the combined techniques of geometric phase analysis of atomic-resolution images and quantitative elemental mapping from core-loss electron energy-loss spectroscopy within scanning transmission electron microscopy. The variation in In-content between successive QDs within individual NWs shows a dependence on the magnitude of compressive strain along the growth direction within the underlying GaN barrier layer, which affects the incorporation of In-atoms to minimize the local effective strain energy. Observations suggest that the interfacial misfit between InGaN/GaN within the embedded QDs is mitigated by strain partitioning into both materials, and results in normal stresses inflicted by the presence of the surrounding GaN shell. These experimental measurements are linked to the local piezoelectric polarization fields for individual QDs, and are discussed in terms of the photoluminescence from an ensemble of NWs.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 3.44
Times cited: 19
DOI: 10.1088/0957-4484/26/34/344002
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“Physical properties of epitaxial SrMnO2.5−δFγoxyfluoride films”. Wang J, Shin Y, Gauquelin N, Yang Y, Lee C, Jannis D, Verbeeck J, Rondinelli JM, May SJ, Journal of physics : condensed matter 31, 365602 (2019). http://doi.org/10.1088/1361-648X/ab2414
Abstract: Recently, topotactic fluorination has become an alternative way of doping epitaxial perovskite oxides through anion substitution to engineer their electronic properties instead of the more commonly used cation substitution. In this work, epitaxial oxyfluoride SrMnO2.5−δ F γ films were synthesized via topotactic fluorination of SrMnO2.5 films using polytetrafluoroethylene as the fluorine source. Oxidized SrMnO3 films were also prepared for comparison with the fluorinated samples. The F content, probed by x-ray photoemission spectroscopy, was systematically controlled by adjusting fluorination conditions. Electronic transport measurements reveal that increased F content (up to γ = 0.14) systematically increases the electrical resistivity, despite the nominal electron-doping induced by F substitution for O in these films. In contrast, oxidized SrMnO3 exhibits a decreased resistivity and conduction activation energy. A blue-shift of optical absorption features occurs with increasing F content. Density functional theory calculations indicate that F acts as a scattering center for electronic transport, controls the observed weak ferromagnetic behavior of the films, and reduces the inter-band optical transitions in the manganite films. These results stand in contrast to bulk electron-doped La1−x Ce x MnO3, illustrating how aliovalent anionic substitutions can yield physical behavior distinct from A-site substituted perovskites with the same nominal B-site oxidation states.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.649
Times cited: 5
DOI: 10.1088/1361-648X/ab2414
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“Unravelling stacking order in epitaxial bilayer MX₂, using 4D-STEM with unsupervised learning”. Mehta AN, Gauquelin N, Nord M, Orekhov A, Bender H, Cerbu D, Verbeeck J, Vandervorst W, Nanotechnology 31, 445702 (2020). http://doi.org/10.1088/1361-6528/ABA5B6
Abstract: Following an extensive investigation of various monolayer transition metal dichalcogenides (MX2), research interest has expanded to include multilayer systems. In bilayer MX2, the stacking order strongly impacts the local band structure as it dictates the local confinement and symmetry. Determination of stacking order in multilayer MX(2)domains usually relies on prior knowledge of in-plane orientations of constituent layers. This is only feasible in case of growth resulting in well-defined triangular domains and not useful in-case of closed layers with hexagonal or irregularly shaped islands. Stacking order can be discerned in the reciprocal space by measuring changes in diffraction peak intensities. Advances in detector technology allow fast acquisition of high-quality four-dimensional datasets which can later be processed to extract useful information such as thickness, orientation, twist and strain. Here, we use 4D scanning transmission electron microscopy combined with multislice diffraction simulations to unravel stacking order in epitaxially grown bilayer MoS2. Machine learning based data segmentation is employed to obtain useful statistics on grain orientation of monolayer and stacking in bilayer MoS2.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 3.5
Times cited: 13
DOI: 10.1088/1361-6528/ABA5B6
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“Asymmetric Interfacial Intermixing Associated Magnetic Coupling in LaMnO3/LaFeO3 Heterostructures”. Chen B, Gauquelin N, Green RJ, Verbeeck J, Rijnders G, Koster G, Frontiers in physics 9 (2021). http://doi.org/10.3389/fphy.2021.698154
Abstract: The structural and magnetic properties of LaMnO<sub>3</sub>/LaFeO<sub>3</sub>(LMO/LFO) heterostructures are characterized using a combination of scanning transmission electron microscopy, electron energy-loss spectroscopy, bulk magnetometry, and resonant x-ray reflectivity. Unlike the relatively abrupt interface when LMO is deposited on top of LFO, the interface with reversed growth order shows significant cation intermixing of Mn<sup>3+</sup>and Fe<sup>3+</sup>, spreading ∼8 unit cells across the interface. The asymmetric interfacial chemical profiles result in distinct magnetic properties. The bilayer with abrupt interface shows a single magnetic hysteresis loop with strongly enhanced coercivity, as compared to the LMO plain film. However, the bilayer with intermixed interface shows a step-like hysteresis loop, associated with the separate switching of the “clean” and intermixed LMO sublayers. Our study illustrates the key role of interfacial chemical profile in determining the functional properties of oxide heterostructures.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 1
DOI: 10.3389/fphy.2021.698154
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“Intrinsic thermal instability of methylammonium lead trihalide perovskite”. Conings B, Drijkoningen J, Gauquelin N, Babayigit A, D'Haen J, D'Olieslaeger L, Ethirajan A, Verbeeck J, Manca J, Mosconi E, Angelis FD, Boyen HG;, Laser physics review 5, 1500477 (2015). http://doi.org/10.1002/aenm.201500477
Abstract: Organolead halide perovskites currently are the new front-runners as light absorbers in hybrid solar cells, as they combine efficiencies passing already 20% with deposition temperatures below 100 °C and cheap solution-based fabrication routes. Long-term stability remains a major obstacle for application on an industrial scale. Here, it is demonstrated that significant decomposition effects already occur during annealing of a methylammonium lead triiode perovskite at 85 °C even in inert atmosphere thus violating international standards. The observed behavior supports the view of currently used perovskite materials as soft matter systems with low formation energies, thus representing a major bottleneck for their application, especially in countries with high average temperatures. This result can trigger a broader search for new perovskite families with improved thermal stability.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 16.721
Times cited: 1691
DOI: 10.1002/aenm.201500477
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“Thickness dependent properties in oxide heterostructures driven by structurally induced metal-oxygen hybridization variations”. Liao Z, Gauquelin N, Green RJ, Macke S, Gonnissen J, Thomas S, Zhong Z, Li L, Si L, Van Aert S, Hansmann P, Held K, Xia J, Verbeeck J, Van Tendeloo G, Sawatzky GA, Koster G, Huijben M, Rijnders G, Advanced functional materials 27, 1606717 (2017). http://doi.org/10.1002/ADFM.201606717
Abstract: Thickness-driven electronic phase transitions are broadly observed in different types of functional perovskite heterostructures. However, uncertainty remains whether these effects are solely due to spatial confinement, broken symmetry, or rather to a change of structure with varying film thickness. Here, this study presents direct evidence for the relaxation of oxygen-2p and Mn-3d orbital (p-d) hybridization coupled to the layer-dependent octahedral tilts within a La2/3Sr1/3MnO3 film driven by interfacial octahedral coupling. An enhanced Curie temperature is achieved by reducing the octahedral tilting via interface structure engineering. Atomically resolved lattice, electronic, and magnetic structures together with X-ray absorption spectroscopy demonstrate the central role of thickness-dependent p-d hybridization in the widely observed dimensionality effects present in correlated oxide heterostructures.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 12.124
Times cited: 55
DOI: 10.1002/ADFM.201606717
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“Energy Level Alignment and Cation Charge States at the LaFeO3/LaMnO3(001) Heterointerface”. Smolin SY, Choquette AK, Wilks RG, Gauquelin N, Félix R, Gerlach D, Ueda S, Krick AL, Verbeeck J, Bär M, Baxter JB, May SJ, Advanced Materials Interfaces 4, 1700183 (2017). http://doi.org/10.1002/admi.201700183
Abstract: The electronic properties of LaFeO 3 /LaMnO 3 epitaxial heterojunctions are investigated to determine the valence and conduction band offsets and the nominal Mn and Fe valence states at the interface. Studying a systematic series of (LaFeO 3 ) n /(LaMnO 3 ) m bilayers (m ≈ 50) epitaxially grown in the (001) orientation using molecular beam epitaxy, layer-resolved electron energy loss spectroscopy reveals a lack of significant interfacial charge transfer, with a nominal 3+ valence state observed for both Mn and Fe across the interface. Through a combination of variable angle spectroscopic ellipsometry and hard X-ray photoelectron spectroscopy, type I energy level alignments are obtained at the LaFeO 3 /LaMnO 3 interface with positive valence and conduction band offsets of (1.20 ± 0.07) eV and (0.5–0.7 ± 0.3) eV, respectively, with minimal band bending. Variable temperature resistivity measurements reveal that the bilayers remain insulating and that the presence of the heterojunction does not result in a conducting interface.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 4.279
Times cited: 14
DOI: 10.1002/admi.201700183
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“Epitaxial stress-free growth of high crystallinity ferroelectric PbZr0.52Ti0.48O3 on GaN/AlGaN/Si(111) substrate”. Li L, Liao Z, Gauquelin N, Minh Duc Nguyen, Hueting RJE, Gravesteijn DJ, Lobato I, Houwman EP, Lazar S, Verbeeck J, Koster G, Rijnders G, Advanced Materials Interfaces 5, 1700921 (2018). http://doi.org/10.1002/ADMI.201700921
Abstract: <script type='text/javascript'>document.write(unpmarked('Due to its physical properties gallium-nitride (GaN) is gaining a lot of attention as an emerging semiconductor material in the field of high-power and high-frequency electronics applications. Therefore, the improvement in the performance and/or perhaps even extension in functionality of GaN based devices would be highly desirable. The integration of ferroelectric materials such as lead-zirconate-titanate (PbZrxTi1-xO3) with GaN has a strong potential to offer such an improvement. However, the large lattice mismatch between PZT and GaN makes the epitaxial growth of Pb(Zr1-xTix)O-3 on GaN a formidable challenge. This work discusses a novel strain relaxation mechanism observed when MgO is used as a buffer layer, with thicknesses down to a single unit cell, inducing epitaxial growth of high crystallinity Pb(Zr0.52Ti0.48)O-3 (PZT) thin films. The epitaxial PZT films exhibit good ferroelectric properties, showing great promise for future GaN device applications.'));
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 4.279
Times cited: 15
DOI: 10.1002/ADMI.201700921
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