“Plasma diagnostics of an analytical Grimm-type glow discharge in argon and in neon: Langmuir probe and optical emission spectroscopy measurements”. Bogaerts A, Quentmeier A, Jakubowski N, Gijbels R, Spectrochimica acta: part B : atomic spectroscopy 50, 1337 (1995). http://doi.org/10.1016/0584-8547(95)01356-5
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 3.176
Times cited: 37
DOI: 10.1016/0584-8547(95)01356-5
|
“A structure model and growth mechanism for multishell carbon nanotubes”. Amelinckx S, Bernaerts D, Zhang XB, Van Tendeloo G, van Landuyt J, Science 267, 1334 (1995). http://doi.org/10.1126/science.267.5202.1334
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 33.611
Times cited: 169
DOI: 10.1126/science.267.5202.1334
|
“Diagonalization of the generalized Feynman bipolaron model in a magnetic field”. da Costa WB, Peeters FM, Journal of physics : condensed matter 7, 1293 (1995). http://doi.org/10.1088/0953-8984/7/7/011
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 2.346
Times cited: 18
DOI: 10.1088/0953-8984/7/7/011
|
“Point defect reactions in silicon studied in situ by high flux electron irradiation in high voltage transmission electron microscope”. Vanhellemont J, Romano Rodriguez A, Fedina L, van Landuyt J, Aseev A, Materials science and technology 11, 1194 (1995). http://doi.org/10.1179/mst.1995.11.11.1194
Abstract: Results are presented of in situ studies of 1 MeV electron irradiation induced (113) defect generation in silicon containing different types and concentrations of extrinsic point defects. A semiquantitative model is developed describing the influence of interfaces and stress fields and of extrinsic point defects on the (113) defect generation in silicon during irradiation. The theoretical results obtained are correlated with experimental data obtained on silicon uniformly doped with boron and phosphorus and with observations obtained by irradiating cross-sectional samples of wafers with highly doped surface layers. It is shown that in situ irradiation in a high voltage election microscope is a powerful tool for studying local point defect reactions in silicon. (C) 1995 The Institute of Materials.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 0.995
Times cited: 7
DOI: 10.1179/mst.1995.11.11.1194
|
“Point defect reactions in silicon studies in situ by high flux electron irradiation in high voltage transmission electron microscope”. Vanhellemont J, Romano-Rodriguez A, Fedina L, van Landuyt J, Aseev A, Materials science and technology 11, 1194 (1995)
Keywords: A3 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 7
|
“A transmission electron microscopy study of tweed-like structures in Al62Cu17.5CO17.5Si3 decagonal quasicrystals”. Zhang Z, Geng W, van Landuyt J, Van Tendeloo G, Philosophical magazine: A: physics of condensed matter: defects and mechanical properties 71, 1177 (1995)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 7
|
“SAED and HREM results suggest a NiTi B19' based superstructure for CuZr martensite”. Schryvers D, Journal de physique: colloques, suppléments 5, 1047 (1995). http://doi.org/10.1051/jp4/1995581047
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 2
DOI: 10.1051/jp4/1995581047
|
“Ni2Al versus Ni5Al3 ordering in Ni65Al35 austenite and martensite”. Schryvers D, Toth L, van Humbeeck J, Beyer J, Journal de physique: colloques, suppléments 5, 1029 (1995). http://doi.org/10.1051/jp4/1995581029
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 12
DOI: 10.1051/jp4/1995581029
|
“Parameter evaluation for the analysis of oxide-based samples with radio ferquency glow discharge mass spectrometry”. de Gendt S, Van Grieken RE, Ohorodnik SK, Harrison WW, Analytical chemistry 67, 1026 (1995). http://doi.org/10.1021/AC00102A002
Keywords: A1 Journal article; AXES (Antwerp X-ray Analysis, Electrochemistry and Speciation)
DOI: 10.1021/AC00102A002
|
“Evaluation of secondary cathodes for glow discharge mass spectrometry analysis of different nonconducting sample types”. Schelles W, de Gendt S, Müller V, Van Grieken R, Applied spectroscopy 49, 939 (1995). http://doi.org/10.1366/0003702953964741
Keywords: A1 Journal article; AXES (Antwerp X-ray Analysis, Electrochemistry and Speciation)
DOI: 10.1366/0003702953964741
|
“FT-IR characterization of tin dioxide gas sensor materials under working conditions”. Lenaerts S, Roggen J, Maes G, Spectrochimica acta: part A: molecular and biomolecular spectroscopy 51, 883 (1995). http://doi.org/10.1016/0584-8539(94)01216-4
Abstract: In this work self-supporting tin dioxide disks are characterized using FT-IR spectroscopy in the presence of a reducing gas in air, and in different O2/N2 mixtures at temperatures varying from room temperature up to 450°C. Every factor inducing a change in the oxygen content of the gas atmosphere above the tin dioxide, as for instance a temperature change, a surface reaction or adsorption of another species, induces a broad, intense IR absorption band with discrete weak bands superimposed on it. This broad absorption is assigned to the electronic transition from a native donor level, the oxygen vacancy in the bulk of the domain, to the conduction band of the tin dioxide material. For the interpretation of the narrow, superimposed absorptions, two hypotheses remain. The results demonstrate that FT-IR spectroscopy is an extremely suitable technique for the characterization of semiconducting metal oxide sensors, since it allows to follow in situ the processes in the bulk, at the surface and in the surrounding gas atmosphere of the sensor material at working temperature as well as in the presence of reducing gases in air.
Keywords: A1 Journal article
DOI: 10.1016/0584-8539(94)01216-4
|
“Determination of scandium in high-purity titanium using inductively coupled plasma mass spectrometry and glow discharge mass spectrometry as part of its certification as a reference material”. Held A, Taylor P, Ingelbrecht C, de Bièvre P, Broekaert J, van Straaten M, Gijbels R, Journal of analytical atomic spectrometry 10, 849 (1995). http://doi.org/10.1039/ja9951000849
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 3.466
Times cited: 6
DOI: 10.1039/ja9951000849
|
“Measuring quantum Hall resistors in pulsed magnetic fields”. van der Burgt M, Peeters FM, Singleton J, Nicholas RJ, Herlach F, Harris JJ, Foxon CT, , 750 (1995)
Keywords: P3 Proceeding; Condensed Matter Theory (CMT)
|
“Self-consistent g* factor and spin-split Landau levels in strong magnetic fields and at low temperatures”. Xu W, Vasilopoulos P, Das MP, Peeters FM, , 743 (1995)
Keywords: P3 Proceeding; Condensed Matter Theory (CMT)
|
“Magnetic freeze-out induced transition from three- to two-dimensional magnetotransport in Si-δ-doped InSb layers grown on GaAs”. Bogaerts R, de Keyser A, van Bockstal L, Herlach F, Karavolas VC, Peeters FM, Borghs G, , 706 (1995)
Keywords: P3 Proceeding; Condensed Matter Theory (CMT)
|
“Comparison between direct current and radiofrequency glow discharge mass spectrometry for the analysis of oxide-based samples”. de Gendt S, Van Grieken R, Hang W, Harrison WW, Journal of analytical atomic spectrometry 10, 689 (1995). http://doi.org/10.1039/JA9951000689
Keywords: A1 Journal article; AXES (Antwerp X-ray Analysis, Electrochemistry and Speciation)
DOI: 10.1039/JA9951000689
|
“Quantitative analysis of iron-rich and other oxide-based samples by means of glow discharge mass spectrometry”. de Gendt S, Schelles W, Van Grieken R, Müller V, Journal of analytical atomic spectrometry 10, 681 (1995). http://doi.org/10.1039/JA9951000681
Keywords: A1 Journal article; AXES (Antwerp X-ray Analysis, Electrochemistry and Speciation)
DOI: 10.1039/JA9951000681
|
“Recent advances in the analysis of individual environmental particles: a review”. Jambers W, de Bock L, Van Grieken R, The analyst 120, 681 (1995). http://doi.org/10.1039/AN9952000681
Keywords: A1 Journal article; AXES (Antwerp X-ray Analysis, Electrochemistry and Speciation)
DOI: 10.1039/AN9952000681
|
“Electron microscopy study of coiled carbon tubules”. Bernaerts D, Zhang XB, Zhang XF, Amelinckx S, Van Tendeloo G, van Landuyt J, Ivanov V, Nagy JB, Philosophical magazine: A: physics of condensed matter: defects and mechanical properties 71, 605 (1995). http://doi.org/10.1080/01418619508244470
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 72
DOI: 10.1080/01418619508244470
|
“Quantum oscillations in the Hall effect of thin Sc1-xErxAs epitaxial layers burried in GaAs”. Bogaerts R, de Keyser A, Herlach F, Peeters FM, DeRosa F, Palmstrøm CJ, Brehmer D, Allen SJ, , 596 (1995)
Keywords: P3 Proceeding; Condensed Matter Theory (CMT)
|
“High field magnetotransport in a Ga0.8In0.2As quantum well with a parallel δ-layer”. van der Burgt M, Karavolas VC, Peeters FM, Singleton J, Nicholas RJ, Herlach F, Harris JJ, van Hove M, Borghs G, , 588 (1995)
Keywords: P3 Proceeding; Condensed Matter Theory (CMT)
|
“Experimental determination of the energy distribution of ions bombarding the cathode surface in a glow discharge”. van Straaten M, Bogaerts A, Gijbels R, Spectrochimica acta: part B : atomic spectroscopy 50, 583 (1995). http://doi.org/10.1016/0584-8547(94)00158-R
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 3.176
Times cited: 22
DOI: 10.1016/0584-8547(94)00158-R
|
“Structural studies on new ternary oxides Ba8Ta4Ti3O24 and Ba10Ta7.04Ti1.2O30”. Shpanchenko RV, Nistor L, Van Tendeloo G, van Landuyt J, Amelinckx S, Journal of solid state chemistry 114, 560 (1995). http://doi.org/10.1006/jssc.1995.1086
Abstract: The ternary oxides Ba8Ta4Ti3O24 and Ba10Ta7.04Ti1.2O30 were synthesized and their crystal structures and defects were studied by means of X-ray powder diffraction, electron diffraction, and high resolution electron microscopy. The crystal structure of Ba8Ta4Ti3O24 is based on the 8H (cchc)(2) close-packed stacking (a 10.0314 Angstrom, c = 18.869 Angstrom, SG P6(3)/mcm, Z = 3) and that of Ba10Ta7.04Ti1.2O30 and on the 10H (cchcc)(2) close-packed stacking (a = 5.7981 Angstrom, c = 23.755 Angstrom, SG P6(3)/mmc, Z = 1) of BaO3 layers. The structural refinements gave the following values for the R factors for Ba8Ta4Ti3O24 (Ba10Ta7.04Ti1.2O30) R(I) = 0.041 (0.039), R(P) = 0.108 (0.118), and R(wP) = 0.094 (0.099). The main feature of both structures is the presence of two types of face-sharing octahedra (FSO) with different occupancies by Ta atoms, Ti atoms, and vacancies, which results in the formation of a superstructure. It was shown that in the Ba8Ta4Ti3O24 structure these pairs of FSO occur in an ordered fashion and in the Ba10Ta7.04Ti1.2O30 structure in a disordered fashion. The existence of the wide range of solid solutions was shown to be also a consequence of the presence of one of the two types of face-sharing octahedra. (C) 1995 Academic Press, Inc,
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.133
Times cited: 23
DOI: 10.1006/jssc.1995.1086
|
“Structural aspects of carbon nanotubes”. Bernaerts D, Amelinckx S, Zhang XB, Van Tendeloo G, van Landuyt J, , 551 (1995)
Keywords: P3 Proceeding; Electron microscopy for materials research (EMAT)
|
“The structure and energetics of B3N2, B2N3, and BN4: symmetry breaking effects in B3N2”. Martin JML, El-Yazal J, François JP, Gijbels R, Molecular physics 85, 527 (1995). http://doi.org/10.1080/00268979500101281
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 1.72
Times cited: 19
DOI: 10.1080/00268979500101281
|
“Synthesis and characterization of mercury based “1222&rdquo, cuprates (Hg1-xMx)(Sr,Ba)2Pr2Cu2O9-\delta (M = Pr, Pb, Bi, Tl)”. Hervieu M, Van Tendeloo G, Michel C, Martin C, Maignan A, Raveau B, Journal of solid state chemistry 115, 525 (1995). http://doi.org/10.1006/jssc.1995.1169
Abstract: Five new layered cuprates, with a 1222-type structure, have been synthesized according to the formula (Hg(1-x)M(x))(Sr,Ba)(2) Pr2Cu2O9-delta with M = Pr, Pb, Pi, and Tl. They crystallize in a tetragonal cell with a approximate to a(p) and c approximate to 29.5 Angstrom; their structure consists in a triple intergrowth of oxygen-deficient perovskite, rock-salt-and fluorite-type layers. They are characterized by a mixed [Hg(1-x)M(x)O(1-delta)] layer in the rock-sail-type slice. The ED and HREM studies show that Tl, Bi, and Pb are statistically distributed in the mixed [Hg(1-x)M(x)O(1-delta)] layer, contrary to Pr which involves an ordering phenomenon along a. Different stacking defects are observed and discussed as well as the cleavage mode of the crystals. (C) 1995 Academic Press, Inc.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.133
Times cited: 5
DOI: 10.1006/jssc.1995.1169
|
“Hydrogeochemical exploration for gold in the Osilo area, Sardinia, Italy”. Cidu R, Fanfani L, Shand P, Edmunds WM, Van 't dack L, Gijbels R, Applied geochemistry 10, 517 (1995). http://doi.org/10.1016/0883-2927(95)00022-4
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 2.268
Times cited: 10
DOI: 10.1016/0883-2927(95)00022-4
|
“The morphology, structure and texture of carbon nanotubes: an electron microscopy study”. Amelinckx S, Bernaerts D, Van Tendeloo G, van Landuyt J, Lucas AA, Mathot M, Lambin P, , 515 (1995)
Keywords: P3 Proceeding; Electron microscopy for materials research (EMAT)
|
“In-situ HVEM study of dislocation generation in patterned stress fields at silicon surfaces”. Vanhellemont J, Claeys C, van Landuyt J, Physica status solidi: A: applied research 150, 497 (1995). http://doi.org/10.1002/pssa.2211500144
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 6
DOI: 10.1002/pssa.2211500144
|
“Cyclotron-resonance of 2d electrons at Si-\delta-doped InSb layers grown on GaAs”. Van Bockstal L, Mahy M, de Keyser A, Hoeks W, Herlach F, Peeters FM, Van de Graaf W, Borghs G, Physica: B : condensed matter 211, 466 (1995). http://doi.org/10.1016/0921-4526(94)01095-I
Abstract: Cyclotron resonance (CR) of the electrons accumulated at sheets with heavy Si doping in InSb were observed using far infrared radiation. The angular dependence of the CR follows closely the 1/cos theta behaviour with some small deviations at high angles attributed to coupling between subbands. From the effective mass of the lowest subband, which is found to be 0.027m(o), the bottom of the lowest subband was determined to lie 125 meV below the Fermi level.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 1.319
Times cited: 2
DOI: 10.1016/0921-4526(94)01095-I
|
