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Author Nguten, N.T.T.; Peeters, F.M.
Title Many-body effects in the cyclotron resonance of a magnetic dot Type A1 Journal article
Year 2009 Publication Physical review : B : solid state Abbreviated Journal Phys Rev B
Volume 80 Issue 11 Pages (down) 115335,1-115335,9
Keywords A1 Journal article; Condensed Matter Theory (CMT)
Abstract Intraband cyclotron resonance (CR) transitions of a two-electron quantum dot containing a single magnetic ion is investigated for different Coulomb interaction strengths and different positions of the magnetic ion. In contrast to the usual parabolic quantum dots where CR is independent of the number of electrons, we found here that due to the presence of the magnetic ion Kohn's theorem no longer holds and CR is different for systems with different number of electrons and different effective electron-electron Coulomb interaction strength. Many-body effects result in shifts in the transition energies and change the number of CR lines. The position of the magnetic ion inside the quantum dot affects the structure of the CR spectrum by changing the position and the number of crossings and anticrossings in the transition energies and oscillator strengths.
Address
Corporate Author Thesis
Publisher Place of Publication Lancaster, Pa Editor
Language Wos 000270383200110 Publication Date 2009-09-30
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1098-0121;1550-235X; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 3.836 Times cited 6 Open Access
Notes Approved Most recent IF: 3.836; 2009 IF: 3.475
Call Number UA @ lucian @ c:irua:79228 Serial 1941
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Author Michel, K.H.; Verberck, B.
Title Theory of the evolution of phonon spectra and elastic constants from graphene to graphite Type A1 Journal article
Year 2008 Publication Physical review : B : solid state Abbreviated Journal Phys Rev B
Volume 78 Issue 8 Pages (down) 085424,1-085424,17
Keywords A1 Journal article; Condensed Matter Theory (CMT)
Abstract We present a unified theory of the phonon dispersions and elastic properties of graphene, graphite, and graphene multilayer systems. Starting from a fifth-nearest-neighbor force-constant model derived from full in-plane phonon dispersions of graphite [Mohr et al., Phys. Rev. B 76, 035439 (2007)], we use Born's long-wave method to calculate the tension and bending coefficients of graphene. Extending the model by interplanar interactions, we study the phonon dispersions and the elastic constants of graphite, and the phonon spectra of graphene multilayers. We find that the inner displacement terms due to sublattice shifts between inequivalent C atoms are quantitatively important in determining the elastomechanical properties of graphene and of graphite. The overall agreement between theory and experiment is very satisfactory. We investigate the evolution from graphene to graphite by studying the increase in the rigid plane optical mode as a function of the number of layers N. At N=10 the graphite value B2g1127 cm−1 is attained within a few percent.
Address
Corporate Author Thesis
Publisher Place of Publication Lancaster, Pa Editor
Language Wos 000259406900106 Publication Date 2008-08-21
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1098-0121;1550-235X; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 3.836 Times cited 72 Open Access
Notes Approved Most recent IF: 3.836; 2008 IF: 3.322
Call Number UA @ lucian @ c:irua:76527 Serial 3622
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Author Pourghaderi, M.A.; Magnus, W.; Sorée, B.; Meuris, M.; de Meyer, K.; Heyns, M.
Title Tunneling-lifetime model for metal-oxide-semiconductor structures Type A1 Journal article
Year 2009 Publication Physical review : B : solid state Abbreviated Journal Phys Rev B
Volume 80 Issue 8 Pages (down) 085315,1-085315,10
Keywords A1 Journal article; Condensed Matter Theory (CMT)
Abstract In this paper we investigate the basic physics of charge carriers (electrons) leaking out of the inversion layer of a metal-oxide-semiconductor capacitor with a biased gate. In particular, we treat the gate leakage current as resulting from two combined processes: (1) the time-dependent decay of electron wave packets representing the inversion-layer charge and (2) the local generation of new electrons replacing those that have leaked away. As a result, the gate current simply emerges as the ratio of the total charge in the inversion layer to the tunneling lifetime. The latter is extracted from the quantum dynamics of the decaying wave packets, while the generation rate is incorporated as a phenomenological source term in the continuity equation. Not only do the gate currents calculated with this model agree very well with experiment, the model also provides an onset to solve the paradox of the current-free bound states representing the resonances of the Schrödinger equation that governs the fully coupled metal-oxide-semiconductor system.
Address
Corporate Author Thesis
Publisher Place of Publication Lancaster, Pa Editor
Language Wos 000269639300076 Publication Date 2009-08-21
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1098-0121;1550-235X; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 3.836 Times cited 2 Open Access
Notes Approved Most recent IF: 3.836; 2009 IF: 3.475
Call Number UA @ lucian @ c:irua:78294 Serial 3763
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Author Li, B.; Partoens, B.; Peeters, F.M.; Magnus, W.
Title Dielectric mismatch effect on coupled shallow impurity states in a semiconductor nanowire Type A1 Journal article
Year 2009 Publication Physical review : B : solid state Abbreviated Journal Phys Rev B
Volume 79 Issue 8 Pages (down) 085306,1-085306,7
Keywords A1 Journal article; Condensed Matter Theory (CMT)
Abstract Coupled shallow impurity states in a freestanding semiconductor nanowire and in a semiconductor nanowire surrounded by a metallic gate are studied within the effective-mass approximation. Bonding and antibonding states are found due to the coupling of the two impurities, and their energy converges with increasing distance di between the two impurities. The dependences of the binding energy on the wire radius R, the distance di between the two impurities, and the impurity radial position in the nanowire are examined.
Address
Corporate Author Thesis
Publisher Place of Publication Lancaster, Pa Editor
Language Wos 000263816000051 Publication Date 2009-02-09
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1098-0121;1550-235X; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 3.836 Times cited 11 Open Access
Notes Approved Most recent IF: 3.836; 2009 IF: 3.475
Call Number UA @ lucian @ c:irua:76223 Serial 691
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Author Xu, W.; Peeters, F.M.; Lu, T.C.
Title Dependence of resistivity on electron density and temperature in graphene Type A1 Journal article
Year 2009 Publication Physical review : B : solid state Abbreviated Journal Phys Rev B
Volume 79 Issue 7 Pages (down) 073403,1-073403,4
Keywords A1 Journal article; Condensed Matter Theory (CMT)
Abstract On the basis of the momentum-balance equation derived from the Boltzmann equation in which electron interactions with impurities and acoustic and optic phonons are included, we examine the dependence of the resistivity in graphene on temperature and electron density. Simple analytical expressions for the different contributions to the resistivity are obtained. Our results reproduce recent experimental findings and we are able to understand the different temperature dependence of the resistivity for low and high density samples.
Address
Corporate Author Thesis
Publisher Place of Publication Lancaster, Pa Editor
Language Wos 000263815800013 Publication Date 2009-02-12
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1098-0121;1550-235X; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 3.836 Times cited 31 Open Access
Notes Approved Most recent IF: 3.836; 2009 IF: 3.475
Call Number UA @ lucian @ c:irua:76222 Serial 642
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Author Zha, G.-Q.; Chen, Y.; Peeters, F.M.; Zhou, S.-P.
Title Impurity-induced modulations of orders in d-wave superconductors Type A1 Journal article
Year 2009 Publication Physical review : B : solid state Abbreviated Journal Phys Rev B
Volume 80 Issue 6 Pages (down) 064518,1-064518,5
Keywords A1 Journal article; Condensed Matter Theory (CMT)
Abstract By using a model Hamiltonian with competing antiferromagnetic (AFM) and d-wave superconductivity orders, the impurity-induced structures of orders in d-wave superconductors is investigated. We find that the transition between one-dimensional stripe and two-dimensional checkerboardlike modulation around a single nonmagnetic impurity can take place as the strength of the AFM interaction U or the impurity scattering strength V0 is varied. It is also found that the impurity-induced stripe can first transit to checkerboardlike modulation and then disappears with increasing the next-nearest-neighbor hopping strength |t|. Phase diagrams of V0 versus U and |t| for various modulations of the spin order are presented. In addition, the quantum interference effect on the modulations of orders due to two strong nonmagnetic impurities is briefly examined, and the checkerboardlike and quasistripe patterns can occur depending on the sites where two impurities are placed.
Address
Corporate Author Thesis
Publisher Place of Publication Lancaster, Pa Editor
Language Wos 000269638800074 Publication Date 2009-09-01
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1098-0121;1550-235X; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 3.836 Times cited 3 Open Access
Notes Approved Most recent IF: 3.836; 2009 IF: 3.475
Call Number UA @ lucian @ c:irua:78293 Serial 1572
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Author Berdiyorov, G.R.; Yu, S.H.; Xiao, Z.L.; Peeters, F.M.; Hua, J.; Imre, A.; Kwok, W.K.
Title Effect of sample geometry on the phase boundary of a mesoscopic superconducting loop Type A1 Journal article
Year 2009 Publication Physical review : B : solid state Abbreviated Journal Phys Rev B
Volume 80 Issue 6 Pages (down) 064511,1-064511,6
Keywords A1 Journal article; Condensed Matter Theory (CMT)
Abstract We studied the effect of sample geometry on the evolution of the superconducting state in nanoscale Nb circular and square loops by transport measurements. A multistage resistive transition with temperature is found for both samples, which is related to the effect of contact leads made from the same superconducting material. The H-T phase diagrams close to Tc0 show clear periodic oscillations on top of a parabolic background, i.e., Little-Parks effect. However, the amplitude of the oscillations decreases faster in the circular loop compared to the one in the square sample. Numerical simulations are conducted within the nonlinear Ginzburg-Landau theory to show the effect of sample geometry on the nucleation of superconductivity in superconducting loop structures.
Address
Corporate Author Thesis
Publisher Place of Publication Lancaster, Pa Editor
Language Wos 000269638800067 Publication Date 2009-08-17
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1098-0121;1550-235X; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 3.836 Times cited 21 Open Access
Notes Approved Most recent IF: 3.836; 2009 IF: 3.475
Call Number UA @ lucian @ c:irua:78292 Serial 833
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Author Zhao, H.-W.; Zha, G.-Q.; Zhou, S.-P.; Peeters, F.M.
Title Long-range Coulomb repulsion effect on a charged vortex in high-temperature superconductors with competing d-wave and antiferromagnetic orders Type A1 Journal article
Year 2008 Publication Physical review : B : solid state Abbreviated Journal Phys Rev B
Volume 78 Issue 6 Pages (down) 064505,1-064505,5
Keywords A1 Journal article; Condensed Matter Theory (CMT)
Abstract Vortex charges in high-temperature superconductor (HTS) are studied by solving the Bogoliubovde Gennes equations based on a model Hamiltonian with antiferromagnetic (AF) and d-wave orders in the presence of the long-range Coulomb repulsion. For a sufficient strength of the AF order, the negative vortex charge is found. A sign change between negative and positive may occur by tuning the long-range Coulomb repulsion strength or the doping parameter. Recent NMR experiments are hopefully understood. We show that the charged vortex can induce a spin-orbit coupling that is important for superconductors with a short coherence length and a large value of the energy gap over the Fermi-level ratio. Fractional flux quanta are possible for HTS.
Address
Corporate Author Thesis
Publisher Place of Publication Lancaster, Pa Editor
Language Wos 000259264900084 Publication Date 2008-08-06
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1098-0121;1550-235X; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 3.836 Times cited 12 Open Access
Notes Approved Most recent IF: 3.836; 2008 IF: 3.322
Call Number UA @ lucian @ c:irua:76553 Serial 1837
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Author Shanenko, A.A.; Croitoru, M.D.; Peeters, F.M.
Title Superconducting nanofilms: Andreev-type states induced by quantum confinement Type A1 Journal article
Year 2008 Publication Physical review : B : solid state Abbreviated Journal Phys Rev B
Volume 78 Issue 5 Pages (down) 054505,1-054505,8
Keywords A1 Journal article; Condensed Matter Theory (CMT); Electron microscopy for materials research (EMAT)
Abstract Quantum confinement of the transverse electron motion is the major effect governing the superconducting properties of high-quality metallic nanofilms, leading to a nonuniform transverse distribution of the superconducting condensate. In this case the order parameter can exhibit significant local enhancements due to these quantum-size effects and, consequently, quasiparticles have lower energies when they avoid the local enhancements of the pair condensate. Such excitations can be considered as new Andreev-type quasiparticles but now induced by quantum confinement. By numerically solving the Bogoliubovde Gennes equations and using Anderson's approximate solution to these equations, we: (a) formulate a criterion for such new Andreev-type states (NATS) and (b) study their effect on the superconducting characteristics in metallic nanofilms. We also argue that nanofilms made of low-carrier-density materials, e.g., of superconducting semiconductors, can be a more optimal choice for the observations of NATS and other quantum-size superconducting effects.
Address
Corporate Author Thesis
Publisher Place of Publication Lancaster, Pa Editor
Language Wos 000259368200109 Publication Date 2008-08-11
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1098-0121;1550-235X; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 3.836 Times cited 14 Open Access
Notes Approved Most recent IF: 3.836; 2008 IF: 3.322
Call Number UA @ lucian @ c:irua:76526 Serial 3356
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Author Werner, R.; Raisch, C.; Leca, V.; Ion, V.; Bals, S.; Van Tendeloo, G.; Chasse, T.; Kleiner, R.; Koelle, D.
Title Transport, magnetic, and structural properties of La0.7Ce0.3MnO3 thin films: evidence for hole-doping Type A1 Journal article
Year 2009 Publication Physical review : B : solid state Abbreviated Journal Phys Rev B
Volume 79 Issue 5 Pages (down) 054416,1-054416,8
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract Cerium-doped manganite thin films were grown epitaxially by pulsed laser deposition at 720 °C and oxygen pressure pO2=125 Pa and were subjected to different annealing steps. According to x-ray diffraction (XRD) data, the formation of CeO2 as a secondary phase could be avoided for pO28 Pa. However, transmission electron microscopy shows the presence of CeO2 nanoclusters even in those films which appear to be single phase in XRD. With O2 annealing, the metal-to-insulator transition temperature increases, while the saturation magnetization decreases and stays well below the theoretical value for electron-doped La0.7Ce0.3MnO3 with mixed Mn3+/Mn2+ valences. The same trend is observed with decreasing film thickness from 100 to 20 nm, indicating a higher oxygen content for thinner films. Hall measurements on a film which shows a metal-to-insulator transition clearly reveal holes as dominating charge carriers. Combining data from x-ray photoemission spectroscopy, for determination of the oxygen content, and x-ray absorption spectroscopy (XAS), for determination of the hole concentration and cation valences, we find that with increasing oxygen content the hole concentration increases and Mn valences are shifted from 2+ to 4+. The dominating Mn valences in the films are Mn3+ and Mn4+, and only a small amount of Mn2+ ions can be observed by XAS. Mn2+ and Ce4+ XAS signals obtained in surface-sensitive total electron yield mode are strongly reduced in the bulk-sensitive fluorescence mode, which indicates hole-doping in the bulk for those films which do show a metal-to-insulator transition.
Address
Corporate Author Thesis
Publisher Place of Publication Lancaster, Pa Editor
Language Wos 000263815400057 Publication Date 2009-02-13
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1098-0121;1550-235X; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 3.836 Times cited 25 Open Access
Notes Esteem 026019; Fwo Approved Most recent IF: 3.836; 2009 IF: 3.475
Call Number UA @ lucian @ c:irua:76221 Serial 3725
Permanent link to this record
 
 
Author Avetisyan, A.A.; Partoens, B.; Peeters, F.M.
Title Electric field tuning of the band gap in graphene multilayers Type A1 Journal article
Year 2009 Publication Physical review : B : solid state Abbreviated Journal Phys Rev B
Volume 79 Issue 3 Pages (down) 035421,1-035421,7
Keywords A1 Journal article; Condensed Matter Theory (CMT)
Abstract A perpendicular electric field applied to multilayers of graphene modifies the electronic structure near the K point and may induce an energy gap in the electronic spectrum. This gap is tunable by the gate voltage and its size depends on the number of layers. We use a tight-binding approach to calculate the band structure and include a self-consistent calculation in order to obtain the density of charge carriers. Results are presented for systems consisting of three and four layers of graphene. The effect of the circular asymmetry of the band structure on the gap is critically examined.
Address
Corporate Author Thesis
Publisher Place of Publication Lancaster, Pa Editor
Language Wos 000262978200119 Publication Date 2009-01-30
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1098-0121;1550-235X; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 3.836 Times cited 106 Open Access
Notes Approved Most recent IF: 3.836; 2009 IF: 3.475
Call Number UA @ lucian @ c:irua:75984 Serial 887
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Author Masir, M.R.; Vasilopoulos, P.; Peeters, F.M.
Title Tunneling, conductance, and wavevector filtering through magnetic barriers in bilayer graphene Type A1 Journal article
Year 2009 Publication Physical review : B : solid state Abbreviated Journal Phys Rev B
Volume 79 Issue 3 Pages (down) 035409,1-035409,8
Keywords A1 Journal article; Condensed Matter Theory (CMT)
Abstract We evaluate the transmission and conductance through magnetic barrier structures in bilayer graphene. In particular we consider a magnetic step, single and double barriers, -function barriers, as well as barrier structures that have average magnetic field equal to zero. The transmission depends strongly on the direction of the incident electron or hole wavevector and gives the possibility to construct a direction-dependent wavevector filter. The results contrast sharply with previous results on single-layer graphene. In general, the angular range of perfect transmission becomes drastically wider and the gaps narrower. This perfect transmission range decreases with the number of barriers, the barrier width, and the magnetic field. Depending on the structure, a variety of transmission resonances occur that are reflected in the conductance through the structure.
Address
Corporate Author Thesis
Publisher Place of Publication Lancaster, Pa Editor
Language Wos 000262978200107 Publication Date 2009-01-14
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1098-0121;1550-235X; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 3.836 Times cited 80 Open Access
Notes Approved Most recent IF: 3.836; 2009 IF: 3.475
Call Number UA @ lucian @ c:irua:75983 Serial 3762
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Author Hao, Y.L.; Djotyan, A.P.; Avetisyan, A.A.; Peeters, F.M.
Title Shallow donor states near a semiconductor-insulator-metal interface Type A1 Journal article
Year 2009 Publication Physical review : B : solid state Abbreviated Journal Phys Rev B
Volume 80 Issue 3 Pages (down) 035329,1-035329,10
Keywords A1 Journal article; Condensed Matter Theory (CMT)
Abstract The lowest energy electronic states of a donor located near a semiconductor-insulator-metal interface are investigated within the effective mass approach. The effect of the finite thickness of the insulator between the semiconductor and the metallic gate on the energy levels is studied. The lowest energy states are obtained through a variational approach, which takes into account the influence of all image charges that arise due to the presence of the metallic and the dielectric interfaces. We compare our results with a numerical exact calculation using the finite element technique.
Address
Corporate Author Thesis
Publisher Place of Publication Lancaster, Pa Editor
Language Wos 000268617800101 Publication Date 2009-07-30
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1098-0121;1550-235X; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 3.836 Times cited 22 Open Access
Notes Approved Most recent IF: 3.836; 2009 IF: 3.475
Call Number UA @ lucian @ c:irua:77950 Serial 2989
Permanent link to this record
 
 
Author Croitoru, M.D.; Shanenko, A.A.; Kaun, C.C.; Peeters, F.M.
Title Superconducting nanowires: interplay of discrete transverse modes with supercurrent Type A1 Journal article
Year 2009 Publication Physical review : B : solid state Abbreviated Journal Phys Rev B
Volume 80 Issue 2 Pages (down) 024513,1-024513,11
Keywords A1 Journal article; Electron microscopy for materials research (EMAT); Condensed Matter Theory (CMT)
Abstract From a numerical solution of the Bogoliubov-de Gennes equations, we investigate an interplay of the transverse discrete modes with a longitudinal supercurrent in a metallic cylindrical superconducting nanowire. The superconductor-to-normal transition induced by a longitudinal superflow of electrons is found to occur as a cascade of jumps in the order parameter (supercurrent and superfluid density) as a function of the superfluid velocity for diameters d<1015 nm (for Al parameters) and sufficiently low temperatures T<0.30.4Tc, with Tc the critical temperature. When approaching Tc, the jumps are smoothed into steplike but continuous drops. A similar picture occurs for d>1520 nm. Only when the diameter exceeds 5070 nm the quantum-size cascades are fully washed out, and we arrive at the mesoscopic regime. Below this regime the critical current density jc exhibits the quantum-size oscillations with pronounced resonant enhancements: the smaller the diameter, the more significant is the enhancement. Thickness fluctuations of real samples will smooth out such oscillations into an overall growth of jc with decreasing nanowire diameter.
Address
Corporate Author Thesis
Publisher Place of Publication Lancaster, Pa Editor
Language Wos 000268617500092 Publication Date 2009-07-22
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1098-0121;1550-235X; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 3.836 Times cited 21 Open Access
Notes Approved Most recent IF: 3.836; 2009 IF: 3.475
Call Number UA @ lucian @ c:irua:77949 Serial 3358
Permanent link to this record
 
 
Author Pogosov, W.V.; Misko, V.R.; Zhao, H.J.; Peeters, F.M.
Title Collective vortex phases in periodic plus random pinning potential Type A1 Journal article
Year 2009 Publication Physical review : B : solid state Abbreviated Journal Phys Rev B
Volume 79 Issue 1 Pages (down) 014504,1-014504,12
Keywords A1 Journal article; Condensed Matter Theory (CMT)
Abstract We study theoretically the simultaneous effect of regular and random pinning potentials on the vortex lattice structure at filling factor of 1. This structure is determined by a competition between the square symmetry of regular pinning array, by the intervortex interaction favoring a triangular symmetry, and by the randomness trying to depin vortices from their regular positions. Both analytical and molecular-dynamics approaches are used. We construct a phase diagram of the system in the plane of regular and random pinning strengths and determine typical vortex lattice defects appearing in the system due to the disorder. We find that the total disordering of the vortex lattice can occur either in one step or in two steps. For instance, in the limit of weak pinning, a square lattice of pinned vortices is destroyed in two steps. First, elastic chains of depinned vortices appear in the film; but the vortex lattice as a whole remains still pinned by the underlying square array of regular pinning sites. These chains are composed into fractal-like structures. In a second step, domains of totally depinned vortices are generated and the vortex lattice depins from regular array.
Address
Corporate Author Thesis
Publisher Place of Publication Lancaster, Pa Editor
Language Wos 000262977900092 Publication Date 2009-01-06
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1098-0121;1550-235X; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 3.836 Times cited 14 Open Access
Notes Approved Most recent IF: 3.836; 2009 IF: 3.475
Call Number UA @ lucian @ c:irua:75982 Serial 386
Permanent link to this record