Author |
Title |
Year |
Publication |
Volume |
Times cited |
Additional Links |
Clima, S.; Chen, Y.Y.; Degraeve, R.; Mees, M.; Sankaran, K.; Govoreanu, B.; Jurczak, M.; De Gendt, S.; Pourtois, G. |
First-principles simulation of oxygen diffusion in HfOx : role in the resistive switching mechanism |
2012 |
Applied physics letters |
100 |
63 |
UA library record; WoS full record; WoS citing articles |
Heyne, M.H.; Marinov, D.; Braithwaite, N.; Goodyear, A.; de Marneffe, J.-F.; Cooke, M.; Radu, I.; Neyts, E.C.; De Gendt, S. |
A route towards the fabrication of 2D heterostructures using atomic layer etching combined with selective conversion |
2019 |
2D materials |
6 |
|
UA library record; WoS full record; WoS citing articles |
Nourbakhsh, A.; Cantoro, M.; Klekachev, A.V.; Pourtois, G.; Vosch, T.; Hofkens, J.; van der Veen, M.H.; Heyns, M.M.; de Gendt, S.; Sels, B.F. |
Single layer vs bilayer graphene : a comparative study of the effects of oxygen plasma treatment on their electronic and optical properties |
2011 |
The journal of physical chemistry: C : nanomaterials and interfaces |
115 |
46 |
UA library record; WoS full record; WoS citing articles |
Villarreal, R.; Lin, P.-C.; Faraji, F.; Hassani, N.; Bana, H.; Zarkua, Z.; Nair, M.N.; Tsai, H.-C.; Auge, M.; Junge, F.; Hofsaess, H.C.; De Gendt, S.; De Feyter, S.; Brems, S.; Ahlgren, E.H.; Neyts, E.C.; Covaci, L.; Peeters, F.M.; Neek-Amal, M.; Pereira, L.M.C. |
Breakdown of universal scaling for nanometer-sized bubbles in graphene |
2021 |
Nano Letters |
21 |
24 |
UA library record; WoS full record; WoS citing articles |
Nourbakhsh, A.; Cantoro, M.; Klekachev, A.; Clemente, F.; Sorée, B.; van der Veen, M.H.; Vosch, T.; Stesmans, A.; Sels, B.; de Gendt, S. |
Tuning the Fermi level of SiO2-supported single-layer graphene by thermal annealing |
2010 |
Journal Of Physical Chemistry C |
114 |
54 |
UA library record; WoS full record; WoS citing articles |
Heyne, M.H.; de Marneffe, J.-F.; Nuytten, T.; Meersschaut, J.; Conard, T.; Caymax, M.; Radu, I.; Delabie, A.; Neyts, E.C.; De Gendt, S. |
The conversion mechanism of amorphous silicon to stoichiometric WS2 |
2018 |
Journal of materials chemistry C : materials for optical and electronic devices |
6 |
4 |
UA library record; WoS full record; WoS citing articles |
Heyne, M.H.; Chiappe, D.; Meersschaut, J.; Nuytten, T.; Conard, T.; Bender, H.; Huyghebaert, C.; Radu, I.P.; Caymax, M.; de Marneffe, J.F.; Neyts, E.C.; De Gendt, S.; |
Multilayer MoS2 growth by metal and metal oxide sulfurization |
2016 |
Journal of materials chemistry C : materials for optical and electronic devices |
4 |
|
UA library record; WoS full record; WoS citing articles |
de Gendt, S.; Van Grieken, R.E.; Ohorodnik, S.K.; Harrison, W.W. |
Parameter evaluation for the analysis of oxide-based samples with radio ferquency glow discharge mass spectrometry |
1995 |
Analytical chemistry |
67 |
|
UA library record; WoS full record; WoS citing articles |
Schelles, W.; de Gendt, S.; Müller, V.; Van Grieken, R. |
Evaluation of secondary cathodes for glow discharge mass spectrometry analysis of different nonconducting sample types |
1995 |
Applied spectroscopy |
49 |
|
UA library record; WoS full record; WoS citing articles |
Schelles, W.; de Gendt, S.; Van Grieken, R.E. |
Optimization of secondary cathode thickness for direct current glow discharge mass spectrometric analysis of glass |
1996 |
Journal of analytical atomic spectrometry |
11 |
|
UA library record; WoS full record; WoS citing articles |
Xu, X.; Vereecke, G.; Chen, C.; Pourtois, G.; Armini, S.; Verellen, N.; Tsai, W.K.; Kim, D.W.; Lee, E.; Lin, C.Y.; Van Dorpe, P.; Struyf, H.; Holsteyns, F.; Moshchalkov, V.; Indekeu, J.; De Gendt, S.; |
Capturing wetting states in nanopatterned silicon |
2014 |
ACS nano |
8 |
39 |
UA library record; WoS full record; WoS citing articles |
Schelles, W.; de Gendt, S.; Maes, K.; Van Grieken, R. |
The use of a secondary cathode to analyse solid non-conducting samples with direct current glow discharge mass spectrometry: potential and restrictions |
1996 |
Fresenius' journal of analytical chemistry |
355 |
|
UA library record; WoS full record; WoS citing articles |
de Gendt, S.; Van Grieken, R.; Hang, W.; Harrison, W.W. |
Comparison between direct current and radiofrequency glow discharge mass spectrometry for the analysis of oxide-based samples |
1995 |
Journal of analytical atomic spectrometry |
10 |
|
UA library record; WoS full record; WoS citing articles |
de Gendt, S.; Schelles, W.; Van Grieken, R.; Müller, V. |
Quantitative analysis of iron-rich and other oxide-based samples by means of glow discharge mass spectrometry |
1995 |
Journal of analytical atomic spectrometry |
10 |
|
UA library record; WoS full record; WoS citing articles |
Hardy, A.; Van Elshocht, S.; De Dobbelaere, C.; Hadermann, J.; Pourtois, G.; De Gendt, S.; Afanas'ev, V.V.; Van Bael, M.K. |
Properties and thermal stability of solution processed ultrathin, high-k bismuth titanate (Bi2Ti2O7) films |
2012 |
Materials research bulletin |
47 |
|
UA library record; WoS full record; WoS citing articles |
Lujan, G.S.; Magnus, W.; Soree, B.; Pourghaderi, M.A.; Veloso, A.; van Dal, M.J.H.; Lauwers, A.; Kubicek, S.; De Gendt, S.; Heyns, M.; De Meyer, K.; |
A new method to calculate leakage current and its applications for sub-45nm MOSFETs |
2005 |
Solid-State Device Research (ESSDERC), European Conference
T2 – ESSDERC 2005 : proceedings of 35th European Solid-State Device Research Conference, September 12-16, 2005, Grenoble, France |
|
|
UA library record; WoS full record |
Cantoro, M.; Klekachev, A.V.; Nourbakhsh, A.; Sorée, B.; Heyns, M.M.; de Gendt, S. |
Long-wavelength, confined optical phonons in InAs nanowires probed by Raman spectroscopy |
2011 |
European physical journal : B : condensed matter and complex systems |
79 |
10 |
UA library record; WoS full record; WoS citing articles |
Kuczumow, A.; Claes, M.; Schmeling, M.; Van Grieken, R.; de Gendt, S. |
Quantification problems in light element determination by grazing emission X-ray fluorescence |
2000 |
Journal of analytical atomic spectrometry |
15 |
|
UA library record; WoS full record; WoS citing articles |
Clima, S.; Kaczer, B.; Govoreanu, B.; Popovici, M.; Swerts, J.; Verhulst, A.S.; Jurczak, M.; De Gendt, S.; Pourtois, G. |
Determination of ultimate leakage through rutile TiO2 and tetragonal ZrO2 from ab initio complex band calculations |
2013 |
IEEE electron device letters |
34 |
3 |
UA library record; WoS full record; WoS citing articles |
Pourtois, G.; Lauwers, A.; Kittl, J.; Pantisano, L.; Sorée, B.; De Gendt, S.; Magnus, W.; Heyns, A.; Maex, K. |
First-principle calculations on gate/dielectric interfaces : on the origin of work function shifts |
2005 |
Microelectronic engineering |
80 |
31 |
UA library record; WoS full record; WoS citing articles |
de Witte, H.; de Gendt, S.; Douglas, M.; Conard, T.; Kenis, K.; Mertens, P.W.; Vandervorst, W.; Gijbels, R. |
Capabilities of TOF-SIMS to study the influence of different oxidation conditions on metal contamination redistribution |
1999 |
|
|
|
UA library record; WoS full record; |
Lujan, G.S.; Magnus, W.; Sorée, B.; Ragnarsson, L.A.; Trojman, L.; Kubicek, S.; De Gendt, S.; Heyns, A.; De Meyer, K. |
Barrier permeation effects on the inversion layer subband structure and its applications to the electron mobility |
2005 |
Microelectronic engineering |
80 |
1 |
UA library record; WoS full record; WoS citing articles |
Marinov, D.; de Marneffe, J.-F.; Smets, Q.; Arutchelvan, G.; Bal, K.M.; Voronina, E.; Rakhimova, T.; Mankelevich, Y.; El Kazzi, S.; Nalin Mehta, A.; Wyndaele, P.-J.; Heyne, M.H.; Zhang, J.; With, P.C.; Banerjee, S.; Neyts, E.C.; Asselberghs, I.; Lin, D.; De Gendt, S. |
Reactive plasma cleaning and restoration of transition metal dichalcogenide monolayers |
2021 |
npj 2D Materials and Applications |
5 |
|
UA library record; WoS full record; WoS citing articles |
Sorée, B.; Magnus, W.; Szepieniec, M.; Vandenbreghe, W.; Verhulst, A.; Pourtois, G.; Groeseneken, G.; de Gendt, S.; Heyns, M. |
Novel device concepts for nanotechnology : the nanowire pinch-off FET and graphene tunnelFET |
2010 |
ECS transactions |
28 |
|
UA library record; WoS full record; WoS citing articles |
de Witte, H.; de Gendt, S.; Douglas, M.; Conard, T.; Kenis, K.; Mertens, P.W.; Vandervorst, W.; Gijbels, R. |
Evaluation of time-of-flight secondary ion mass spectrometry for metal contamination monitoring on wafer surfaces |
2000 |
Journal of the electrochemical society |
147 |
14 |
UA library record; WoS full record; WoS citing articles |
Heyne, M.H.; de Marneffe, J.-F.; Radu, I.; Neyts, E.C.; De Gendt, S. |
Thermal recrystallization of short-range ordered WS2 films |
2018 |
Journal of vacuum science and technology: A: vacuum surfaces and films |
36 |
2 |
UA library record; WoS full record; WoS citing articles |
Heyne, M.H.; de Marneffe, J.-F.; Delabie, A.; Caymax, M.; Neyts, E.C.; Radu, I.; Huyghebaert, C.; De Gendt, S. |
Two-dimensional WS2 nanoribbon deposition by conversion of pre-patterned amorphous silicon |
2017 |
Nanotechnology |
28 |
13 |
UA library record; WoS full record; WoS citing articles |
de Gendt, S.; Kenis, K.; Mertens, P.W.; Heyns, M.M.; Claes, M.; Van Grieken, R.E.; Bailleul, A.; Knotter, M.; de Bokx, P.K. |
Use of grazing emission XRF spectrometry for silicon wafer surface contamination measurements |
1996 |
|
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|
UA library record |