Balasubramaniam, Y.; Pobedinskas, P.; Janssens, S.D.; Sakr, G.; Jomard, F.; Turner, S.; Lu, Y.G.; Dexters, W.; Soltani, A.; Verbeeck, J.; Barjon, J.; Nesládek, M.; Haenen, K.; |
Thick homoepitaxial (110)-oriented phosphorus-doped n-type diamond |
2016 |
Applied physics letters |
109 |
20 |
UA library record; WoS full record; WoS citing articles |